CN202170373U - Furnace body for sapphire growth through adopting Czochralski method - Google Patents
Furnace body for sapphire growth through adopting Czochralski method Download PDFInfo
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- CN202170373U CN202170373U CN2011202325599U CN201120232559U CN202170373U CN 202170373 U CN202170373 U CN 202170373U CN 2011202325599 U CN2011202325599 U CN 2011202325599U CN 201120232559 U CN201120232559 U CN 201120232559U CN 202170373 U CN202170373 U CN 202170373U
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- thermal insulation
- heat
- insulation layers
- insulation layer
- collet
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Abstract
The utility model discloses a furnace body for sapphire growth through adopting the Czochralski method, which includes a heat-insulating upper cover, an outer wall and a heat-insulating collet, wherein the heat-insulating collet is formed by a plurality thermal insulation layers; and grooves are arranged on the thermal insulation layers. In the prior art, the heat-insulating collet is solid, while in the utility model, the grooves are arranged on the thermal insulation layers, so that cavities are formed between the two adjacent thermal insulation layers, and the heat conduction efficiency of gas is low. Through arranging the grooves, the thermal insulation effect of the thermal insulation layers is improved, the axial temperature gradient inside the growth cavity is reduced, the crystal interface constantly grows in the dimpling state, and the crystal quality is guaranteed. Under the same thermal insulation effect, the total thickness of the thermal insulation layers of the furnace bottom of the furnace body is smaller than that of the prior art, so that the usage amount of the zirconia heat insulating material is reduced, and the manufacturing cost is reduced.
Description
Technical field
The utility model relates to a kind of crystal and gives birth to frock, used frock when being specifically related to a kind of Czochralski grown sapphire crystal.
Background technology
At present, in the technology of sapphire growth, crystal pulling method is one of reasonable method.In the Czochralski grown process, the thermal field in the growth chamber distributes, and is most important to the crystal mass that grows.Growth chamber is axially interior and radial symmetry gradient is excessive or the too small crystal that all can make produces defective.In the sapphire crystal growth process, if thermograde is excessive, will remaining sizable thermal stresses in the crystal, thermal stresses is excessive will to make crystal cleavage; When if thermograde is too small, crystal growth power is not enough, and crystal can not be grown fully.The insulation collet of frock is made up of 6 layers of solid thermal insulation layer in the prior art, its heat insulation effect still can, but zirconium white lagging material usage quantity is bigger, the axial-temperature gradient in the sapphire growth chamber is big, has influenced the quality of the sapphire crystal of final molding.
The utility model content
The technical problem that the utility model will solve is that the axial-temperature gradient in existing sapphire growth chamber is big, and the body of heater of the little Czochralski grown sapphire crystal of a kind of axial-temperature gradient is provided.
The technical scheme of the utility model realizes in the following manner: a kind of body of heater of Czochralski grown sapphire, comprise the insulation loam cake, and outer wall and insulation collet, said insulation collet is made up of the several layers thermal insulation layer, and thermal insulation layer is provided with groove.
Said thermal insulation layer is the zirconium white thermal insulation layer.
Said insulation collet is made up of four layers of thermal insulation layer.
Said thermal insulation layer is provided with one or two groove.
The insulation collet is a solid construction in the prior art, and the utility model is provided with groove on thermal insulation layer, cavity occurred between adjacent two thermal insulation layers, and gas conduction efficient is low.The utility model increased the heat insulation effect of thermal insulation layer through the setting of groove, reduced thermograde axial in the growth chamber, makes crystal interface be in the growth of dimpling state all the time, guaranteed the crystalline quality.Under the identical situation of heat insulation effect, the total thickness of the utility model furnace bottom thermal insulation layer has reduced zirconium white lagging material usage quantity less than prior art, has reduced production cost.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Embodiment
As shown in Figure 1, the utility model comprises insulation loam cake 2, outer wall 1 and insulation collet 4, and said insulation collet 4 is made up of several layers thermal insulation layer 6, and thermal insulation layer 6 is provided with groove 5.The existence of groove 5 can reduce heat runs off, and has increased the heat insulation effect of thermal insulation layer, has reduced the quantity of thermal insulation layer.
Said thermal insulation layer 6 is the zirconium white thermal insulation layer.
Said insulation collet 4 is made up of four layers of thermal insulation layer 6.The design of the utility model further groove thermal insulation layer has reduced thermograde and zirconium white lagging material usage quantity axial in the cavity, and technology stability is strong, helps the growth of sapphire crystal.
As required, can on said thermal insulation layer 6, establish one or two groove 5.
Claims (4)
1. the body of heater of a Czochralski grown sapphire crystal; Comprise insulation loam cake (2); Outer wall (1) and insulation collet (4), it is characterized in that: said insulation collet (4) is made up of several layers thermal insulation layer (6), and thermal insulation layer (6) is provided with groove (5).
2. the body of heater of Czochralski grown sapphire crystal according to claim 1, it is characterized in that: said thermal insulation layer (6) is the zirconium white thermal insulation layer.
3. the body of heater of Czochralski grown sapphire crystal according to claim 1, it is characterized in that: said insulation collet (4) is made up of four layers of thermal insulation layer (6).
4. the body of heater of Czochralski grown sapphire crystal according to claim 1, it is characterized in that: said thermal insulation layer (6) is provided with one or two groove (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202325599U CN202170373U (en) | 2011-07-04 | 2011-07-04 | Furnace body for sapphire growth through adopting Czochralski method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202325599U CN202170373U (en) | 2011-07-04 | 2011-07-04 | Furnace body for sapphire growth through adopting Czochralski method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202170373U true CN202170373U (en) | 2012-03-21 |
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ID=45828574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202325599U Expired - Fee Related CN202170373U (en) | 2011-07-04 | 2011-07-04 | Furnace body for sapphire growth through adopting Czochralski method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202170373U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104131347A (en) * | 2013-05-02 | 2014-11-05 | 周黎 | Temperature field structure in sapphire single crystal growth furnace and temperature adjusting method thereof |
-
2011
- 2011-07-04 CN CN2011202325599U patent/CN202170373U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104131347A (en) * | 2013-05-02 | 2014-11-05 | 周黎 | Temperature field structure in sapphire single crystal growth furnace and temperature adjusting method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 Termination date: 20120704 |