CN202534686U - Cob封装led光源模块 - Google Patents
Cob封装led光源模块 Download PDFInfo
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- CN202534686U CN202534686U CN2012201845406U CN201220184540U CN202534686U CN 202534686 U CN202534686 U CN 202534686U CN 2012201845406 U CN2012201845406 U CN 2012201845406U CN 201220184540 U CN201220184540 U CN 201220184540U CN 202534686 U CN202534686 U CN 202534686U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
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Abstract
本实用新型公开了一种COB封装LED光源模块,包括PCB铝基体,所述铝基体上设有系列凹穴,在凹穴内设有与覆铜电路键合的LED芯片,芯片上部设有荧光粉层和透镜,所述铝基体覆铜的一面设有与之紧密相接的覆面板,所述覆面板上设有与凹穴对应的透镜孔,所述透镜孔向外呈喇叭口状,透镜孔下口直径大于凹穴上口直径,覆铜线路键合点露出于透镜孔下口,透镜与透镜孔壁紧密相接。本实用新型用于制作大功率LED灯具,具有热阻小,充分利用芯片侧面出光,出光效率高,无需再造透镜围坝,工艺简单,制作方便,透镜形态也便于控制等优点。
Description
技术领域
本实用新型属于LED封装技术领域,具体是涉及一种COB封装的多芯片LED模组。
背景技术
LED的COB封装(板上芯片封装)不仅能够制造大功率LED照明产品,而且具有热阻小、光线均匀、应用方便等优点。现有LED的COB封装,一般是在铝基覆铜板上做好电路,再将LED芯片固晶到覆铜板上,完成键合,然后在封装区周围加塑料或硅胶制作围坝,最后在围坝内点荧光粉和硅胶。普遍存在着光效偏低,制作麻烦,可靠性差的缺点。也有的在铝基覆铜板上设置反光腔,在反光腔内设置芯片,虽能提高光效,但仍需要在反光腔周围设置围栅,在围栅内涂覆硅胶透镜。也存在着工艺复杂,透镜形态难以控制等缺点。
发明内容
本实用新型要解决的技术问题是提供一种光效高,便于制作的COB封装LED光源模块。
为解决上述技术问题,本实用新型包括PCB铝基体,所述铝基体上设有系列凹穴,在凹穴内设有与覆铜电路键合的LED芯片,芯片上部设有荧光粉层和透镜,其结构特点是所述铝基体覆铜的一面设有与之紧密相接的覆面板,所述覆面板上设有与凹穴对应的透镜孔,所述透镜孔向外呈喇叭口状,透镜孔下口直径大于凹穴上口直径,覆铜线路键合点露出于透镜孔下口,透镜与透镜孔壁紧密相接。
优选的是所述凹穴底面为平面,其侧面为倒圆锥形,其底面与侧面内夹角为100至135度。
所述覆面板与铝基体间设有绝缘粘结层。
更为优选的是所述透镜为硅胶透镜,其顶面呈凸面状,透镜侧上沿不高于透镜孔上口沿。
所述凹穴及透镜孔侧壁表面设有反光层。
采用上述结构后,由于LED芯片设在铝基体上的凹穴内,芯片直接与铝基体相接,热阻小,同时在铝基体上设有覆面板,覆面板上设有与凹穴对应的透镜孔,且透镜孔呈喇叭口状,透镜孔壁具有反射作用,充分利用了芯片侧面出光,提高了出光效率。透镜直接点涂在透镜孔内,无需再造透镜围坝,工艺简单,制作方便,而且透镜形态也便于控制。
附图说明
下面结合附图和实施例对本实用新型作进一步描述:
图1是本实用新型结构示意图;
图2是本实用新型侧剖示意图;
图3是本实用新型部分放大示意图。
具体实施方式
参照附图,本实用新型包括PCB铝基体1,在铝基体1上设有系列凹穴2,凹穴2底面为平面,其侧面为倒圆锥形,其底面与侧面内夹角12为100至135度。凹穴2周围的铝基体1表面设有覆铜电路6。铝基体1覆铜的一面上设有与之紧密相接的铝基覆面板7,覆面板7与铝基体1间设有绝缘粘结层9,覆面板7上设有与凹穴2对应的透镜孔8,透镜孔8向外呈喇叭口状,透镜孔8下口直径大于凹穴2上口直径,以便于覆铜线路6的键合点露出于透镜孔8下口。LED芯片3设在凹穴2内,并通过键合金丝11与覆铜电路6键合,芯片3上部依次设有荧光粉层4和透镜5。透镜5为硅胶透镜,其顶面呈凸面状,透镜5的侧上沿不高于透镜孔8上口沿,透镜5与透镜孔8壁紧密相接。凹穴2、透镜孔8侧壁及键合点表面设有镀银反光层,在覆铜线路6与铝基体1之间设有绝缘层10。
Claims (5)
1.一种COB封装LED光源模块,包括PCB铝基体(1),所述铝基体(1)上设有系列凹穴(2),在凹穴(2)内设有与覆铜电路(6)键合的LED芯片(3),芯片(3)上部设有荧光粉层(4)和透镜(5),其特征是所述铝基体(1)覆铜的一面设有与之紧密相接的覆面板(7),所述覆面板(7)上设有与凹穴(2)对应的透镜孔(8),所述透镜孔(8)向外呈喇叭口状,透镜孔(8)下口直径大于凹穴(2)上口直径,覆铜线路(6)键合点露出于透镜孔(8)下口,透镜(5)与透镜孔(8)壁紧密相接。
2.按照权利要求1所述的COB封装LED光源模块,其特征是所述凹穴(2)底面为平面,其侧面为倒圆锥形,其底面与侧面内夹角(12)为100至135度。
3.按照权利要求1或2所述的COB封装LED光源模块,其特征是所述覆面板(7)与铝基体(1)间设有绝缘粘结层(9)。
4.按照权利要求3所述的COB封装LED光源模块,其特征是所述透镜(5)为硅胶透镜,其顶面呈凸面状,透镜(5)侧上沿不高于透镜孔(8)上口沿。
5.按照权利要求1所述的COB封装LED光源模块,其特征是所述凹穴(2)及透镜孔(8)侧壁表面设有反光层。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024647A (zh) * | 2016-06-14 | 2016-10-12 | 重庆切普电子技术有限公司 | 一种cob封装器件低成本生产工艺 |
WO2017206405A1 (zh) * | 2016-05-30 | 2017-12-07 | 深圳市奥蕾达科技有限公司 | 新型cob全彩led发光面板及其制造方法 |
CN110167833A (zh) * | 2016-10-31 | 2019-08-23 | D·萨尔瓦焦 | 车辆本体中的集成电子部件 |
CN110233149A (zh) * | 2018-05-09 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | Led支架制作方法、led支架及led |
US11230338B2 (en) | 2012-03-28 | 2022-01-25 | Salvaggio Jr David | Integrated electronic component in vehicle body |
-
2012
- 2012-04-27 CN CN2012201845406U patent/CN202534686U/zh not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11230338B2 (en) | 2012-03-28 | 2022-01-25 | Salvaggio Jr David | Integrated electronic component in vehicle body |
US11679833B2 (en) | 2012-03-28 | 2023-06-20 | Salvaggio Jr David | Integrated electronic component in vehicle body |
US12030576B2 (en) | 2012-03-28 | 2024-07-09 | David Salvaggio, JR. | Integrated electronic component in vehicle body |
WO2017206405A1 (zh) * | 2016-05-30 | 2017-12-07 | 深圳市奥蕾达科技有限公司 | 新型cob全彩led发光面板及其制造方法 |
CN106024647A (zh) * | 2016-06-14 | 2016-10-12 | 重庆切普电子技术有限公司 | 一种cob封装器件低成本生产工艺 |
CN110167833A (zh) * | 2016-10-31 | 2019-08-23 | D·萨尔瓦焦 | 车辆本体中的集成电子部件 |
CN110167833B (zh) * | 2016-10-31 | 2021-11-09 | D·萨尔瓦焦 | 车辆本体中的集成电子部件 |
CN110233149A (zh) * | 2018-05-09 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | Led支架制作方法、led支架及led |
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Granted publication date: 20121114 |