CN202384395U - 一种灌胶功率型led - Google Patents

一种灌胶功率型led Download PDF

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CN202384395U
CN202384395U CN2011205683618U CN201120568361U CN202384395U CN 202384395 U CN202384395 U CN 202384395U CN 2011205683618 U CN2011205683618 U CN 2011205683618U CN 201120568361 U CN201120568361 U CN 201120568361U CN 202384395 U CN202384395 U CN 202384395U
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lens
wafer
support
ppa
led
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龚文
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SHENZHEN JINGTAI CO., LTD.
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Shenzhen Jingtai Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本实用新型提供一种灌胶功率型LED，其包括铜柱、PPA支架、晶片、封装胶和透镜和支架引脚，其中：所述晶片固定设置在所述铜柱上，所述晶片与所述PPA支架通过金线连接，所述PPA支架上还设置有透镜，所述晶片和金线位于所述透镜内，且所述透镜设置有封装胶，所述封装胶将所述晶片和金线封装在所述透镜内，所述PPA支架的两侧分别设置有支架引脚。本实用新型提供的灌胶功率型LED结构简单，其具有低热阻、高光效、高导热、高显色指数、散热快的性能，可以提高LED的流明和使用寿命。

Description

一种灌胶功率型LED
技术领域
本实用新型涉及LED(发光电子管)技术领域，特别涉及一种灌胶功率型LED。 
背景技术
阵列封装与系统集成技术经过40多年得发展，LED封装技术和结构先后经历了三个阶段： 
1、引脚式LED封装引脚式封装就是常用的3-5mm封装结构。一般用于电流较小(20-30mA)，功率较低(小于0.1W)的LED封装。主要用于仪表显示或指示，大规模集成时也可作为显示屏。其缺点在于封装热阻较大(一般高于100LM/W)，寿命较短。 
2、表面组装(贴片)式(SMT-LED)封装表面组装技术(SMT)是一种可以直接将封装好的器件贴，焊到PCB(印刷电路板)表面指定位置上的一种封装技术。 
3、随着混合集成电路技术的飞速发展、大功率器件的广泛应用以及器件更高性能的要求，对封装材料提出了更新、更高的要求，传统材料不再适用于高功率密度器件的封装。过去大量使用单一铝、铜材质等不能达到良好的导热指标和轻便的要求，而且成本较高，已不能满足这种高功率密度的需要。 
实用新型内容
本实用新型提供一种灌胶功率型LED，其具有高流明、高光效、高导热、散热快的性能。 
为了实现上述目的，本实用新型提供以下技术方案： 
一种灌胶功率型LED，其包括铜柱2、PPA(聚己二酸丙二醇酯)支架1、晶片3、封装胶5和透镜6和支架引脚8，其中：所述晶片3固定设置在所述铜柱2上，所述晶片3与所述PPA支架1通过金线4连接，所述PPA支架1 上还设置有透镜6，所述晶片3和金线4位于所述透镜6内，且所述透镜6设置有封装胶5，所述封装胶5将所述晶片3和金线4封装在所述透镜6内，所述PPA支架1的两侧分别设置有支架引脚8。 
优选地，所述铜柱2的底部设置有散热片7。 
优选地，所述PPA支架和铜柱形成一个矩形整体，该矩形整体的长度为14.5毫米，宽度8毫米。 
通过实施以上技术方案，具有以下技术效果：本实用新型提供的灌胶功率型LED结构简单，其具有低热阻、高光效、高导热、高显色指数、散热快的性能，可以提高LED的流明和使用寿命。 
附图说明
图1为本实用新型实施例提供的灌胶功率型LED的结构示意图。 
具体实施方式
为了更好的理解本实用新型的技术方案，下面结合附图详细描述本实用新型提供的实施例。 
本实用新型实施例提供一种灌胶功率型LED，如图1所示，该灌胶功率型LED包括铜柱2、PPA支架1、晶片3、封装胶5和透镜6和支架引脚8，其中：所述晶片3固定设置在所述铜柱2上，所述晶片3与所述PPA支架1通过金线4连接，实现内部电气性导通，所述PPA支架1上还设置有透镜6，所述晶片3和金线4位于所述透镜6内，且所述透镜6设置有封装胶5，所述封装胶5将所述晶片3和金线4封装在所述透镜6内，该透镜6和封装胶5实现了将晶片3的蓝光转换成白光和对晶片3及金线4的密封保护，所述PPA支架1的两侧分别设置有支架引脚8。 
在上述实施例中，进一步的，所述铜柱2的底部设置有散热片7，该散热片7用于对外散热。从而保证LED温度不会过高而引起晶片3较大衰减的隐患。 
优选地，所述PPA支架和铜柱形成一个矩形整体，该矩形整体的长度为14.5毫米，宽度8毫米。 
以上对本实用新型实施例所提供的一种灌胶功率型LED进行了详细介绍，对于本领域的一般技术人员，依据本实用新型实施例的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本实用新型的限制。 

Claims (3)

1.一种灌胶功率型LED，其特征在于，包括铜柱、PPA支架、晶片、封装胶和透镜和支架引脚，其中：所述晶片固定设置在所述铜柱上，所述晶片与所述PPA支架通过金线连接，所述PPA支架上还设置有透镜，所述晶片和金线位于所述透镜内，且所述透镜设置有封装胶，所述封装胶将所述晶片和金线封装在所述透镜内，所述PPA支架的两侧分别设置有支架引脚。
2.如权利要求1所述灌胶功率型LED，其特征在于，所述铜柱的底部设置有散热片。
3.如权利要求1或2所述灌胶功率型LED，其特征在于，所述PPA支架和铜柱形成一个矩形整体，该矩形整体的长度为14.5毫米，宽度8毫米。
CN2011205683618U 2011-12-29 2011-12-29 一种灌胶功率型led Expired - Lifetime CN202384395U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241497A (zh) * 2013-06-19 2014-12-24 江苏稳润光电有限公司 一种新型高光效,高可靠性,高散热效率白光led制作方法
CN111897163A (zh) * 2020-08-20 2020-11-06 安徽芯瑞达科技股份有限公司 一种led搭配透镜实现超低od的背光模组装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241497A (zh) * 2013-06-19 2014-12-24 江苏稳润光电有限公司 一种新型高光效,高可靠性,高散热效率白光led制作方法
CN111897163A (zh) * 2020-08-20 2020-11-06 安徽芯瑞达科技股份有限公司 一种led搭配透镜实现超低od的背光模组装置

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Owner name: SHENZHEN KINGLIGHT CO., LTD.

Free format text: FORMER NAME: JINGTAI OPTOELECTRONICS CO., LTD.

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Address after: 518000, Guangdong, Baoan District, Fuyong Shenzhen Street (west side of Fu Garden Road) run Heng Industrial plant 4, plant third, fourth, fifth floor

Patentee after: SHENZHEN JINGTAI CO., LTD.

Address before: 518000 Guangdong city of Shenzhen province Baoan District Xixiang Baoan Avenue Fisheries Industrial Park Building 4 floor B measurements

Patentee before: Shenzhen Jingtai Optoelectronics Co., Ltd.

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Granted publication date: 20120815

CX01 Expiry of patent term