CN201904333U - 瓷基集成封装功率led光源 - Google Patents

瓷基集成封装功率led光源 Download PDF

Info

Publication number
CN201904333U
CN201904333U CN2010206533312U CN201020653331U CN201904333U CN 201904333 U CN201904333 U CN 201904333U CN 2010206533312 U CN2010206533312 U CN 2010206533312U CN 201020653331 U CN201020653331 U CN 201020653331U CN 201904333 U CN201904333 U CN 201904333U
Authority
CN
China
Prior art keywords
substrate
thickness
micron
chip
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2010206533312U
Other languages
English (en)
Inventor
刘树高
安建春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Kaiyuan Electronic Co Ltd
Original Assignee
Shandong Kaiyuan Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Kaiyuan Electronic Co Ltd filed Critical Shandong Kaiyuan Electronic Co Ltd
Priority to CN2010206533312U priority Critical patent/CN201904333U/zh
Application granted granted Critical
Publication of CN201904333U publication Critical patent/CN201904333U/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Led Device Packages (AREA)

Abstract

本实用新型公开了一种瓷基集成封装功率LED光源，包括框架、热沉、基板、芯片、电极引脚和封装透镜，所述基板为0.25至0.5毫米厚的导热瓷基板，板体两面分别设有多层金属焊接面和电路，基板上设有多个串联或并联的芯片，贴装灵活，适应性广，平行结构和垂直结构芯片均可。基板与热沉及电路间结合紧密，整体导热能力和绝缘性强，所采用厚度范伟内的陶瓷片，可加工性强，不易破碎，便于制作。

Description

瓷基集成封装功率LED光源
技术领域
本实用新型属于LED照明技术领域，具体是涉及一种陶瓷基多芯片集成封装LED光源。
背景技术
功率LED集成封装已越来越多的应用于LED照明领域。现有集成封装LED光源其结构形式主要是：1、基座贴装式，芯片直接贴到基座的热源上，用金丝将它们连接在一起形成串并联电路。该结构比较简单，散热比较好；但金丝一、二焊点都在芯片上，焊接可靠性差些；芯片排布受到影响，只能同向串联；芯片底部与热源直接连接，其绝缘性能不能令人满意；只能采用平行结构LED芯片，而平行结构芯片热阻大，压降也偏大，可靠性也不如垂直结构的好。2、铝基敷铜板基贴装，即在铝基敷铜板上刻印出导电图形，在上面贴装LED芯片。这种结构虽克服了上种结构存在的缺点，但同样存在不可忽视的问题：一是受铝基板刻蚀工艺的影响，其封装密度偏小，灯具配光困难。二是热阻仍然偏大，导热不理想。三是板体较厚，在基座上装配比较困难。3、硅衬底集成封装，存在的问题一是硅片较脆，在加工过程中易碰伤，造成失效或暗存裂纹形成使用中的失效；二是硅基片在加工过程中氧化时可能由于材料缺陷形成的微型针孔，易造成绝缘性能下降。
发明内容
本实用新型要解决的技术问题是提供一种导热性强，绝缘性好，便于加工的陶瓷基多芯片集成封装LED光源。，
为解决上述技术问题，本实用新型包括框架、热沉、基板、芯片、电极引脚和封装透镜，所述热沉与框架紧固相接，基板与热沉紧密相接，芯片贴装在基板上，基板上设有电路，电极引脚与电路电连接，其结构特点是所述基板为0.25至0.5毫米厚导热瓷基板；所述基板两面分别设有与之连为一体的焊接面和电路；所述焊接面和电路均为多金属层；所述多金属层为3层，内层为结合层，其厚度为0.1至0.3微米；中间为过渡层，其厚度为0.5至1微米；外层为导电层，其厚度为0.5至1微米；所述基板设有多个串联或并联的芯片，所述芯片与电路间通过键合线连接。
优选的是所述基板厚度为为0.3至0.4毫米，所述结合层厚度为0.15至0.25微米；过渡层厚度为0.6至0.8微米；导电层厚度为0.6至0.8微米。
所述基板为氮化铝导热陶瓷，所述多金属层由内到外分别是钛、镍和银材料。
本实用新型热沉与芯片间设有基板，基板主体为导热陶瓷，其两面分别设有多金属焊接面和电路，芯片贴装灵活，既可贴装平行结构芯片，又可贴装垂直结构芯片。基板与热沉及电路间结合紧密，整体导热能力和绝缘性强，所采用厚度范围内的陶瓷片，可加工性强，不易破碎，便于制作。
附图说明
图1是本实用新型侧剖视图；
图2是本实用新型基板结构示意图；
图3是本实用新型芯片连接示意图。
具体实施方式
由图1至图2所示，本实施例包括框架1、热沉2、基板3、芯片4、电极引脚6和封装透镜7。所述热沉2与框架1紧固相接。基板3为0.25至0.5毫米厚导热氮化铝陶瓷基板，比较优选的是采用0.3至0.4毫米厚，导热系数为150w/mk的氮化铝陶瓷板。基板3两面分别设有与之连为一体的焊接面36和电路31；所述焊接面36和电路31均为3层金属复合层，内层为钛金属结合层33，主要起附着连接作用，其厚度为0.1至0.3微米，优选的厚度是0.15至0.25微米；中间为镍金属过渡层34，起阻断和隔离作用，其厚度为0.5至1微米，优选的厚度为0.6至0.8微米；外层为银导电层35，起导电作用，其厚度为0.5至1微米，优选的厚度为0.6至0.8微米。基板3与热沉2焊接，8为焊接材料。多个串联或并联的芯片4贴装在基板3的上，基板3上面的电路31由金属复合层光刻而成，芯片4、电路31及电极引脚6电连接。
图3所示实施例中，芯片4为垂直结构功率LED，芯片4的一面设有键合金线5。
本实用新型陶瓷基板3上的多金属层可采用电子束蒸发工艺，将钛、镍、银依次蒸发至基板3表面，也可采用等离子溅射工艺形成多金属层。其中一面用光刻法刻出LED导电图形。

Claims (3)

1.一种瓷基集成封装功率LED光源，包括框架（1）、热沉（2）、基板（3）、芯片（4）、电极引脚（6）和封装透镜（7），所述热沉（2）与框架（1）紧固相接，基板（3）与热沉（2）紧密相接，芯片（4）贴装在基板（3）上，基板（3）上设有电路（31），电极引脚（6）与电路（31）电连接，其特征是所述基板（3）为0.25至0.5毫米厚导热瓷基板；所述基板（3）两面分别设有与之连为一体的焊接面（36）和电路（31）；所述焊接面（36）和电路（31）均为多金属层；所述多金属层为3层，内层为结合层（33），其厚度为0.1至0.3微米；中间为过渡层（34），其厚度为0.5至1微米；外层为导电层（35），其厚度为0.5至1微米；所述基板（3）上设有多个串联或并联的芯片（4），所述芯片（4）与电路（31）间通过键合线（5）连接。
2.按照权利要求1所述的瓷基集成封装功率LED光源，其特征是所述基板厚度为为0.3至0.4毫米，所述结合层（33）厚度为0.15至0.25微米，过渡层（34）厚度为0.6至0.8微米，导电层（35）厚度为0.6至0.8微米。
3.按照权利要求1所述的瓷基集成封装功率LED光源，其特征是所述基板（3）为氮化铝导热陶瓷，所述多金属层由内到外分别是钛、镍和银材料。
CN2010206533312U 2010-12-11 2010-12-11 瓷基集成封装功率led光源 Expired - Lifetime CN201904333U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010206533312U CN201904333U (zh) 2010-12-11 2010-12-11 瓷基集成封装功率led光源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010206533312U CN201904333U (zh) 2010-12-11 2010-12-11 瓷基集成封装功率led光源

Publications (1)

Publication Number Publication Date
CN201904333U true CN201904333U (zh) 2011-07-20

Family

ID=44274926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010206533312U Expired - Lifetime CN201904333U (zh) 2010-12-11 2010-12-11 瓷基集成封装功率led光源

Country Status (1)

Country Link
CN (1) CN201904333U (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544325A (zh) * 2012-02-14 2012-07-04 张家港市金港镇东南电子厂 一种led集成模组及其制作方法
CN102569603A (zh) * 2012-01-13 2012-07-11 张家港市金港镇东南电子厂 一种led陶瓷基板及其制作方法
RU2474928C1 (ru) * 2011-10-07 2013-02-10 Общество с ограниченной ответственностью "Научно-производственное объединение "Новые экологические технологии и оборудование" Светодиодный блок
WO2014040412A1 (zh) * 2012-09-17 2014-03-20 中国科学院福建物质结构研究所 一种led封装结构
CN104185761A (zh) * 2012-04-05 2014-12-03 皇家飞利浦有限公司 Led照明结构
WO2014206269A1 (en) * 2013-06-27 2014-12-31 Shenzhen Byd Auto R&D Company Limited Led support assembly and led module having the same
RU2661441C1 (ru) * 2017-06-22 2018-07-16 Общество с ограниченной ответственностью "Реф-Свет" Источник излучения с управляемым спектром

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2474928C1 (ru) * 2011-10-07 2013-02-10 Общество с ограниченной ответственностью "Научно-производственное объединение "Новые экологические технологии и оборудование" Светодиодный блок
CN102569603A (zh) * 2012-01-13 2012-07-11 张家港市金港镇东南电子厂 一种led陶瓷基板及其制作方法
CN102544325A (zh) * 2012-02-14 2012-07-04 张家港市金港镇东南电子厂 一种led集成模组及其制作方法
CN102544325B (zh) * 2012-02-14 2013-06-12 张家港市金港镇东南电子厂 一种led集成模组及其制作方法
CN104185761A (zh) * 2012-04-05 2014-12-03 皇家飞利浦有限公司 Led照明结构
WO2014040412A1 (zh) * 2012-09-17 2014-03-20 中国科学院福建物质结构研究所 一种led封装结构
WO2014206269A1 (en) * 2013-06-27 2014-12-31 Shenzhen Byd Auto R&D Company Limited Led support assembly and led module having the same
US9601676B2 (en) 2013-06-27 2017-03-21 Byd Company Limited LED support assembly and LED module
RU2661441C1 (ru) * 2017-06-22 2018-07-16 Общество с ограниченной ответственностью "Реф-Свет" Источник излучения с управляемым спектром

Similar Documents

Publication Publication Date Title
CN201904333U (zh) 瓷基集成封装功率led光源
CN201307606Y (zh) 一种新型陶瓷封装基座
CN203205453U (zh) 一种半导体发光芯片、及半导体照明灯具
TWI381564B (zh) 發光二極體
JP2004140286A (ja) 半導体装置及びその製造方法
JP2011119732A5 (ja) 発光ダイオードパッケージ、及び発光ダイオードパッケージモジュール
US9157610B2 (en) Manufacture method for a surface mounted power LED support and its product
KR101253247B1 (ko) 광 디바이스용 기판
WO2006132794A2 (en) A light-emitting device module with flip-chip configuration on a heat-dissipating substrate
CN101369615B (zh) 低热阻大功率发光二极管的封装方法
CN201187741Y (zh) 阵列式led封装结构
WO2010006475A1 (zh) 一种高功率led陶瓷封装基座
CN201986260U (zh) 一种复合pcb板
TW201037803A (en) Multi-layer packaging substrate, method for making the packaging substrate, and package structure of light-emitting semiconductor
CN201655833U (zh) 一种大功率led封装基座
US20120113630A1 (en) Led energy-saving lamp
TWI720497B (zh) 導熱線路板及其半導體組體
JP4250171B2 (ja) 発光素子用セラミックパッケージ
WO2021093568A1 (zh) 陶瓷基板及led光源
CN201243024Y (zh) 发光二极管的无打线封装结构
KR20220139385A (ko) 일렉트로닉 모듈 및 일렉트로닉 모듈의 제조 방법
TWI423489B (zh) Surface mount power type LED bracket manufacturing method and product thereof
CN103022335B (zh) Led倒装芯片dpc陶瓷基板电子制冷一体化模组及其制作方法
CN104078457A (zh) Led倒装芯片的大功率集成封装结构
TWM405056U (en) Surface-mounted-power-type LED holder structure

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Ceramic substrate integrated package power LED light source

Effective date of registration: 20160630

Granted publication date: 20110720

Pledgee: Changle Shandong rural commercial bank Limited by Share Ltd

Pledgor: Shandong Kaiyuan Electronics Co., Ltd.

Registration number: 2016980000089

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20170620

Granted publication date: 20110720

Pledgee: Changle Shandong rural commercial bank Limited by Share Ltd

Pledgor: Shandong Kaiyuan Electronics Co., Ltd.

Registration number: 2016980000089

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Ceramic substrate integrated package power LED light source

Effective date of registration: 20170717

Granted publication date: 20110720

Pledgee: Changle Shandong rural commercial bank Limited by Share Ltd

Pledgor: Shandong Kaiyuan Electronics Co., Ltd.

Registration number: 2017980000306

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20180801

Granted publication date: 20110720

Pledgee: Changle Shandong rural commercial bank Limited by Share Ltd

Pledgor: Shandong Kaiyuan Electronics Co., Ltd.

Registration number: 2017980000306

PC01 Cancellation of the registration of the contract for pledge of patent right
CX01 Expiry of patent term

Granted publication date: 20110720

CX01 Expiry of patent term