WO2010006475A1 - 一种高功率led陶瓷封装基座 - Google Patents

一种高功率led陶瓷封装基座 Download PDF

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Publication number
WO2010006475A1
WO2010006475A1 PCT/CN2008/001692 CN2008001692W WO2010006475A1 WO 2010006475 A1 WO2010006475 A1 WO 2010006475A1 CN 2008001692 W CN2008001692 W CN 2008001692W WO 2010006475 A1 WO2010006475 A1 WO 2010006475A1
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Prior art keywords
ceramic layer
ceramic
layer
power led
high power
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PCT/CN2008/001692
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English (en)
French (fr)
Inventor
谢灿生
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潮州三环（集团）股份有限公司
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Priority claimed from CN2008101338772A external-priority patent/CN101335319B/zh
Application filed by 潮州三环（集团）股份有限公司 filed Critical 潮州三环（集团）股份有限公司
Publication of WO2010006475A1 publication Critical patent/WO2010006475A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a ceramic package pedestal, and more particularly to an SMD high power LED ceramic package pedestal. Background technique
  • LED As a new type of light source, LED has achieved unprecedented development due to its energy-saving, environmentally-friendly, long-life, fast-starting speed, ability to control the luminescence spectrum, and the prohibition of the size of the band, which makes the chroma light more unparalleled.
  • the heat generation of the LED chip also increases. For high-power LEDs, 80% of the input energy is consumed in the form of heat. If the heat can not be discharged to the outside world in time, causing the temperature rise effect of the chip, the life and light output rate of the LED will be greatly reduced; the thermal conductivity of the conventional epoxy resin packaged base is only 0.47W/mK, which is far from high. The heat dissipation requirements of the power LED.
  • the aluminum substrate is affected by the insulating organic material, and the thermal conductivity is 1 ⁇ 2.2W/mK, which can meet the packaging requirements of some higher power LEDs, but the thermal expansion coefficient of the aluminum substrate and The LED chips are very different.
  • the thermal skew is easily generated, which causes the chip defect and the luminous efficiency to decrease. Since the brightness of the LED increases with the increase of the driving current, the aluminum substrate can not meet the heat dissipation requirement for the LED with higher brightness.
  • the ceramic package base has high thermal conductivity, thermal expansion coefficient and high brightness LED crystal matching, and electric High insulation strength, design of reflective cups and thermal conductive columns can effectively solve these problems and become the ideal heat sink base material for high-power LEDs.
  • the ceramic package base of high-power LED is mainly composed of two layers of different materials (the upper layer is metal) Materials such as aluminum alloy, the lower layer is a copper clad laminate of alumina substrate). Because of the high cost of the copper clad laminate, and because there is no design of the thermal conductive column, the thermal conductivity is limited by alumina, only about 18 ⁇ 20 W/mK; and the combination of the upper and lower layers is bonded with glue, and the airtightness is not good. As a result, the environmental resistance is not good, and the solidified layer formed by the glue hinders the heat conduction between the upper and lower pedestals.
  • the structure of the prior art product is shown in Fig. 1 and Fig. 2.
  • the upper layer is an aluminum alloy ring
  • the lower layer is an aluminum oxide substrate copper clad plate
  • the upper layer is provided with a reflective cup
  • the lower layer is mounted with a chip
  • electrical conduction with the bottom electrode is realized.
  • the patch area 1 is used for mounting the chip;
  • the wire-bonding area 2 is connected to the electrode of the chip through the splicing wire;
  • the bottom pad 3 is connected to the two electrodes of the chip through the pedestal metallization wiring;
  • the conductive via 4 is connected to the upper and lower sides Layer metallized wiring, to achieve upper and lower electrical conduction;
  • reflective cup 5 for collecting and reflecting to increase brightness; heat sink pad 6 for auxiliary heat dissipation, optical lens mounting area 7 for mounting optical lens, for mounting two The secondary optical component mounting area 8 of the secondary optical component.
  • the disadvantages and causes of the above structure include: ⁇ 1), the epoxy resin package base and the aluminum substrate have low thermal conductivity, and the thermal expansion coefficient is too different from the high power LED chip, resulting in a large reduction in luminous efficiency and life, which cannot be achieved.
  • the main two major disadvantages of the existing ceramic package base are: First, the two layers use two materials with large differences in thermal expansion coefficient, and the combination of the two layers is bonded with a glue, and the bond strength is in a heated environment. The lower part is easily weakened, resulting in poor bonding strength and air tightness, and even separation between the upper and lower layers, which cannot satisfy the use of a humid environment.
  • the cured layer formed by bonding easily hinders the heat conduction between the upper and lower pedestals;
  • the underlying ceramic material has no heat-conducting column design, and the thermal conductivity is limited by the performance of the ceramic material, thereby greatly reducing the overall heat dissipation of the package base. Performance and affect the life and luminous efficiency of high power LEDs.
  • SMD high-power LED package base for thermal performance and enhanced high-low temperature shock resistance of LED products
  • high-power LED ceramic package base for improved product reliability and stability.
  • a high-power LED ceramic package base is composed of an upper ceramic layer and a lower ceramic layer, the upper ceramic layer provides a reflective cup, and the upper ceramic layer is further provided with an optical lens mounting area for mounting the optical lens and for mounting a secondary optical component mounting area of the secondary optical component, the lower ceramic layer is used for mounting the chip and electrically connected to the bottom electrode, the upper side of the lower ceramic layer is provided with a patch area for mounting the chip, and the chip electrode is connected by a solder wire In the line region, the bottom side of the lower ceramic layer is provided with a bottom pad connected to the two electrodes of the chip through the base metallization wiring, and the base is further provided with a conductance for connecting the upper and lower metallized wires to realize the upper and lower electricity.
  • the conductive via may be disposed inside or at the edge of the pedestal; the reflective cup in the upper ceramic layer functions to condense and reflect to increase brightness, and the upper ceramic layer and the lower ceramic layer are both made of alumina ceramic
  • the material or aluminum nitride ceramic material is made of, or the upper ceramic layer is made of LTCC material and the lower ceramic layer is made of alumina ceramic material or aluminum nitride ceramic material.
  • the upper and lower ceramic layers are connected by means of sintering of the inorganic sealing medium material, and are used for improving the overall mechanical strength and heat dissipation performance of the package base.
  • the thermal conductivity of the high temperature alumina and aluminum nitride ceramic materials are respectively 18-20 W/mK. And 170 ⁇ 230 W/mK.
  • the reflector cup is made of an alumina material, and the metal layer is electroplated or vacuum-sputtered on the reflective surface of the reflector cup to improve the reflectivity of the reflector cup.
  • the reflector cup is made of Low-temperature cofired ceramics (LTCC) material, because the LTCC material itself has good light reflectivity, so there is no need for a reflective surface of a reflective cup like alumina or aluminum nitride.
  • the metal layer is re-plated or vacuum sputtered.
  • the lower ceramic layer may be provided with a connected high-heat-conducting column and a heat-dissipating plate, the high-heat-conductive column is disposed inside the lower ceramic layer, the upper side of the high-heat-conducting column is connected with the patch area, and the patch area is further provided with silver Ag.
  • High thermal conductivity column filled with high thermal conductivity materials such as tungsten W, molybdenum Mo or copper Cu.
  • the high thermal conductivity column is used to quickly derive the heat generated by the chip.
  • the heat dissipation plate is disposed on the lower side of the lower ceramic layer for the high thermal conductivity column.
  • the derived heat is dissipated, and the lower side of the high thermal conductivity column is connected to the thermal pad, and the thermal pad can assist in heat dissipation.
  • the high thermal conductivity column is filled with silver, tungsten, molybdenum or copper metal to enhance the longitudinal heat transfer of the ceramic base.
  • the lower ceramic layer material is alumina (Al 2 O 3 ) ceramic or aluminum nitride (AIN) ceramic, providing a supporting chip and wiring for electrical conduction and heat dissipation with the bottom electrode, and the upper ceramic layer is the same or different ceramic material,
  • the reflective cup and the optical lens are mounted; the combination of the upper ceramic layer and the lower ceramic layer is sintered by the inorganic sealing medium material, and then electroplated to form an all-ceramic base.
  • a single ceramic package base product can be mounted on a single chip or multiple chips.
  • the number of internal wiring patterns and design layers can vary depending on the number and type of chips installed.
  • a plurality of ceramic package bases can also be used to form the package tabs.
  • the specific production process of the susceptor of the present invention is as follows:
  • the lower ceramic layer material is alumina (Al 2 O 3 ) ceramic or aluminum nitride (AIN) ceramic
  • the upper ceramic layer is the same or different ceramic material
  • Ag, W, Mo or Cu is a metalized material.
  • Lower ceramic layer raw material dispersion ⁇ forming ⁇ slicing ⁇ punching ⁇ potting (printing hole) – flat printing ⁇ lamination/pressurization ⁇ pressure groove ⁇ debinding/sintering.
  • Upper ceramic layer Raw material dispersion ⁇ Forming ⁇ Discharge/sintering ⁇ Electroplating or vacuum sputtering of metal layers.
  • the upper ceramic is different from the lower ceramic material.
  • the upper ceramic layer is LTCC material
  • the lower ceramic layer is alumina (Al 2 0 3 ) ceramic or aluminum nitride (AIN) ceramic:
  • Upper ceramic layer Raw material dispersion ⁇ forming ⁇ debinding / sintering.
  • the upper ceramic is the same as the lower ceramic material, it is alumina (Al 2 O 3 ) ceramic or aluminum nitride (AIN) ceramic:
  • Upper ceramic layer raw material dispersion ⁇ forming ⁇ debinding / sintering ⁇ electroplating / vacuum sputtering metal layer.
  • the upper ceramic is different from the lower ceramic material.
  • the upper ceramic layer is LTCC material, and the lower ceramic layer is alumina (Al 2 0 3 ) ceramic or aluminum nitride (AIN) ceramic:
  • Upper ceramic layer Raw material dispersion - forming ⁇ debinding / sintering.
  • the beneficial effects of a high-power LED ceramic package base of the present invention are: improved SMD high power
  • the invention has the following characteristics:
  • the upper ceramic layer substrate of the LED ceramic package base of the present invention is Al 2 O 3 or AIN ceramic or LTCC material, and has high thermal conductivity.
  • a high thermal conductivity column filled with metal such as Ag, W, Mo or Cu can be provided to assist heat dissipation, and the longitudinal and lateral heat transfer effects of the pedestal are enhanced. Solved the key problem of radiant heat dissipation.
  • the ceramic base matches the thermal expansion coefficient of the chip.
  • the thermal expansion coefficient ⁇ matching can ensure the impact resistance of the product against high and low temperatures, and greatly improve the reliability and stability of LED products.
  • the lower ceramic layer and the upper ceramic layer are ceramic materials.
  • the upper and lower ceramic layers are combined with the sintering process of the inorganic sealing medium material, so that the thermal expansion coefficients of the upper and lower ceramic layers are the same. When it becomes larger, there will be no air leakage, the airtightness is ensured, and the chip and its packaging materials are protected, thereby improving the environmental resistance of the LED product.
  • 1 is a side view showing the overall structure of a conventional ceramic LED package base
  • FIG. 2 is a plan view showing the overall structure of a conventional ceramic LED package base
  • Figure 3 is a side view showing the overall structure of the first embodiment of the present invention.
  • Figure 4 is a plan view showing the overall structure of the first embodiment of the present invention.
  • Figure 5 is a side view of the overall structure of the second embodiment of the present invention.
  • Figure 6 is a plan view showing the overall structure of the second embodiment of the present invention.
  • Figure 7 is a side view showing the overall structure of a third embodiment of the present invention.
  • Figure 8 is a plan view showing the overall structure of a third embodiment of the present invention
  • Figure 9 is a side view showing the overall structure of a fourth embodiment of the present invention.
  • Figure 10 is a plan view showing the overall structure of a fourth embodiment of the present invention.
  • a high power LED ceramic package base is composed of an upper ceramic layer 10 and a lower ceramic layer 11, and the upper ceramic layer 10 is provided with a reflective cup 5, an optical lens mounting region 7, and a secondary optical component mounting.
  • the lower ceramic layer 11 is used for mounting the chip and is electrically connected to the bottom electrode.
  • the upper side of the lower ceramic layer 11 is provided with a patch region 1 for mounting a chip and a wire bonding region 2 for connecting the chip electrodes by soldering wires, and a lower ceramic layer.
  • the bottom side of the layer 11 is provided with a bottom pad 3 connected to the two electrodes of the chip through the base metallization wiring, and the base is further provided with a conductive via 4 for connecting the upper and lower metallized wirings to achieve electrical conduction between the upper and lower sides.
  • the electrical via 4 can be provided inside or at the edge of the pedestal.
  • the reflective cup 5 in the upper ceramic layer 10 serves to collect and reflect brightness, and the lower ceramic layer 11 and the upper ceramic layer 10 may be made of the same alumina or aluminum nitride ceramic material; or may be different ceramics.
  • the lower ceramic layer 11 is made of an alumina or aluminum nitride ceramic material, and the upper ceramic layer 10 is made of an LTCC material.
  • the upper ceramic layer 10 and the lower ceramic layer 11 are connected by sintering of the inorganic medium 12 for improving the overall mechanical strength and heat dissipation performance of the package base.
  • the inorganic medium 12 is an inorganic sealing medium material, high temperature alumina.
  • the thermal conductivity of the aluminum nitride ceramic material are respectively 18 ⁇ 20W/mK and 170 ⁇ 230 W/mK.
  • the lower ceramic layer 11 is provided with a connected high-heat-conducting column 9 and a heat-dissipating pad 6.
  • the high-heat-conducting column 9 is disposed inside the lower ceramic layer 11, and the upper side of the high-heat-conducting column 9 is connected to the patch area, and the high-heat-conducting column 9 is used for The heat generated by the chip is led out, and the heat dissipation pad 6 is disposed on the lower side of the lower ceramic layer 11 for dissipating heat derived from the high heat conduction column 9, and the lower side of the high heat conduction column 9 is connected to the heat dissipation pad 6.
  • Figs. 5 and 6 it is the same as the number of the patch areas 1 for mounting the chip in the first embodiment.
  • the third embodiment of Figs. 1 and 8, and the fourth embodiment of Figs. 9 and 10 three patch areas 1 for mounting chips are provided. It can also set a different number of patch areas 1 according to different needs.
  • the high thermal conductivity column 9 is made of silver metal and has a thermal conductivity of about 430 W/mK.
  • the high thermal conductivity column 9 can also be filled with a metal such as silver, tungsten, molybdenum or copper for reinforcement. The longitudinal heat transfer effect of the ceramic package base.

Description

一种高功率 LED陶瓷封装基座 技术领域
本发明涉及到一种陶瓷封装基座， 尤其涉及到一种 SMD高功率 LED陶瓷封 装基座。 背景技术
LED作为一种新型光源， 由于具有节能、 环保、 寿命长、 启动速度快、 能 控制发光光谱和禁止带幅的大小使彩度更高等传统光源无可比拟的优势而得到 了空前发展。伴随着 LED电流强度和发光量的增加， LED芯片的发热量也随之 上升， 对于高功率 LED, 输入能源的 80%都以热的形态消耗掉。 如果这些热量 不能及时排出外界， 造成芯片的温升效应， LED的寿命和出光率都会大打折扣； 传统使用的环氧树脂封装基座的热传导率仅为 0.47W/mK， 已经远远不能满足 高功率的 LED的散热要求。 近年逐步被较高导热率的铝金属基板替代， 铝基板 受绝缘有机材料的影响， 热传导率为 1~2.2W/mK， 能够满足部分较高功率 LED 的封装要求， 但铝基板的热膨胀系数与 LED芯片差异很大， 当温度变化很大或 封装作业不当时极易产生热歪斜， 引发芯片瑕疵及发光效率降低。 由于 LED亮 度随驱动电流的增大而增大， 对更高亮度的 LED, 铝基板已经无法满足其散热 要求， 陶瓷封装基座因具有热导率高、 热膨胀系数与高亮度 LED晶体匹配、 电 绝缘强度高、 可设计反射杯及导热柱等可以有效的解决这些问题而成为高功率 LED的理想散热基座材料。
目前高功率 LED的陶瓷封装基座主要是由两层不同材料构成（上层为金属 材料， 如铝合金， 下层为氧化铝基材的覆铜板）。 由于覆铜板成本高昂， 并且由 于没有导热柱的设计而导致热传导率受氧化铝所限， 只有约 18~20 W/mK; 而 且上下层的组合为用胶合剂粘结， 其气密性不佳而导致耐环境性不好， 同时胶 合剂形成的固化层会阻碍上下基座间热传导。现有技术的产品结构如图 1和图 2 所示， 上层为铝合金环， 下层为氧化铝基材的覆铜板， 上层提供反射杯， 下层 安装芯片， 并实现与底层电极电导通。 其中贴片区 1 用于安装芯片； 打线区 2 通过悍接导线连接芯片的电极； 底部焊盘 3通过基座金属化布线， 实现与芯片 两个电极的连接； 电导通孔 4连接上下两层金属化布线， 实现上下电导通； 反 射杯 5起到聚光及反射增加亮度的作用；用于辅助散热作用的散热焊盘 6，安装 光学透镜用的光学透镜安装区 7，用于安装二次光学组件的二次光学组件安装区 8。
上述结构的缺点及导致原因包括. · 1 )、 环氧树脂封装基座及铝基板热导率 低，且热膨胀系数与高功率 LED芯片相差太大，导致发光效率和寿命大打折扣， 无法达到高功率、 长寿命的技术要求。 2)、 现有的陶瓷封装基座主要的两大缺 点是： 第一， 两层采用两种热膨胀系数相差大的材料， 且两层的结合是用胶合 剂粘合， 粘合强度在受热环境下极易减弱， 导致结合强度及气密性差， 甚至会 产生上下两层分离， 不能满足潮湿环境的使用。 且粘合形成的固化层， 易阻碍 着上下基座间的热传导； 第二， 底层陶瓷材料无导热柱设计， 热导率受限于陶 瓷材料的性能，因此大大削弱了封装基座的整体散热性能，并且影响高功率 LED 的寿命及发光效率。
基于现有陶瓷封装基座的不足之处， 本发明人设计了"一种高功率 LED陶瓷 封装基座"。 发明内容
本发明针对上述现有技术的不足所要解决的技术问题是： 提供一种提高
SMD高功率 LED封装基座散热性能和增强 LED产品耐高低温度冲击性能， 并 且提高产品可靠性及稳定性的高功率 LED陶瓷封装基座。
本发明解决其技术问题所采用的技术方案是：
一种高功率 LED陶瓷封装基座， 该基座由上陶瓷层和下陶瓷层构成， 上陶 瓷层提供反射杯， 在上陶瓷层还设有用于安装光学透镜的光学透镜安装区和用 于安装二次光学组件的二次光学组件安装区， 下陶瓷层用于安装芯片并实现与 底层电极电导通， 下陶瓷层上侧设有用于安装芯片的贴片区和通过焊接导线连 接芯片电极的打线区， 下陶瓷层下侧设有通过基座金属化布线实现与芯片两个 电极连接的底部焊盘， 基座还设有用于连接上下两层金属化布线以实现上下电. 导通的电导通孔， 该电导通孔可设在基座的内部或边缘； 上陶瓷层中的反射杯 起到聚光及反射增加亮度的作用， 所述的上陶瓷层和下陶瓷层均由氧化铝陶瓷 材料或氮化铝陶瓷材料制成， 或者， 上陶瓷层由 LTCC材料制成和下陶瓷层由 氧化铝陶瓷材料或氮化铝陶瓷材料制成。 上、 下两陶瓷层通过无机熔封介质材 料烧结的方式连接， 用于提高封装基座整体机械强度及散热性能， 高温氧化铝 和氮化铝陶瓷材料的热导率分别为 18~20W/mK和 170~230 W/mK。
所述的反射杯由氧化铝材料制成，在反射杯的反射面上电镀或真空溅射金属 层， 可以提高反射杯的反射率。
所述的反射杯用低温共烧陶瓷（Low-temperature cofired ceramics, 简称 LTCC)材料制成， 因为 LTCC材料本身具有良好的反光性， 所以不需要像氧化 铝或氮化铝材料反射杯的反射面再电镀或真空溅射金属层。 所述的下陶瓷层可以设有相连的高导热柱和散热垾盘， 高导热柱设于下陶 瓷层内部， 高导热柱的上侧与贴片区相连接， 贴片区还设有用银 Ag、 钨 W、钼 Mo或铜 Cu等高导热材料填充的高导热柱， 高导热柱用于将芯片产生的热量快 速导出， 散热悍盘设于下陶瓷层的下侧， 用于将高导热柱导出的热散逸出来， 高导热柱的下侧与散热焊盘相连接， 散热焊盘能够辅助散热。
所述的高导热柱由银、 钨、 钼或铜金属填充而成， 用于增强陶瓷基座纵向 的传热效果。
下陶瓷层材料为氧化铝 （Al203) 陶瓷或者氮化铝 （AIN) 陶瓷， 提供支撑 芯片并布线实现与底层电极电导通及散热用， 上陶瓷层为相同或不同的陶瓷材 料， 提供反射杯及光学透镜安装位置； 上陶瓷层和下陶瓷层的结合通过无机熔 封介质材料烧结， 再经电镀制成全陶瓷的基座。
单颗陶瓷封装基座产品可以安装单芯片或多芯片， 底层内部布线图形及设 计层数可根据安装芯片数量及种类而相应变化。 也可多颗陶瓷封装基座形成封 装联片。
本发明基座的具体生产工艺流程如下：
下陶瓷层材料为氧化铝（Al203)陶瓷或者氮化铝（AIN )陶瓷， 上陶瓷层为 相同或不同的陶瓷材料， Ag、 W、 Mo或 Cu为金属化材料。
1、 下陶瓷层用 W、 Mo金属化材料时：
1 )下陶瓷层：原材料分散→成型→切片 →冲孔→灌封（印孔）—平 面印刷→叠层 /加压→ 压槽 →排胶 /烧结。
2) 上陶瓷与下陶瓷材料相同， 为氧化铝 （AI2103) 陶瓷或者氮化铝 （AIN) 陶瓷时： 上陶瓷层： 原材料分散→成型 →排胶 /烧结→ 电镀或真空溅射金属层。 上陶瓷与下陶瓷材料不相同， 上陶瓷层为 LTCC材料， 下陶瓷层为氧化铝 (Al203) 陶瓷或者氮化铝 （AIN) 陶瓷时：
上陶瓷层： 原材料分散→成型→排胶 /烧结。
3) 下陶瓷层和上陶瓷层完成后再对位—定位烧结结合→电镀镍和银。
2、 下陶瓷层用 Ag、 Cu金属化材料时：
1 )下陶瓷层： 原材料分散 →成型→切片 →冲孔→叠层 /加压→压槽→ 排胶 /烧结→灌封 （印孔）→平面印刷→烧结。
2) 上陶瓷与下陶瓷材料相同， 为氧化铝 （Al203) 陶瓷或者氮化铝 （AIN) 陶瓷时： .
上陶瓷层： 原材料分散→成型→排胶 /烧结→ 电镀 /真空溅射金属层。 上陶瓷与下陶瓷材料不相同， 上陶瓷层为 LTCC材料， 下陶瓷层为氧化铝 (Al203) 陶瓷或者氮化铝 （AIN) 陶瓷时：
上陶瓷层： 原材料分散―成型 →排胶 /烧结。
3) 下陶瓷层和上陶瓷层完成后再对位→定位烧结结合→电镀镍和银。
本发明一种高功率 LED陶瓷封装基座的有益效果是： 提高了 SMD高功率
LED封装基座散热性能， 改善因温升导致 LED芯片光衰大及寿命下降的问题； 增强 LED产品耐高低温度冲击性能， 提高产品的可靠性、 稳定性； 降低生产成 本。 与现有技术相比， 本发明具备有以下几个特点：
( 1 ) 散热性好。 本发明 LED陶瓷封装基座的上陶瓷层基材为 Al203或者 AIN陶瓷或者为 LTCC材料， 其热导率高。 在基座贴片区可设有用 Ag、 W、 Mo 或 Cu等金属填充的高导热柱辅助散热，增强基座纵向及横向传热效果，很好的 解决了基座散热的关键问题。
(2)机械性能强。 上陶瓷层和下陶瓷层采用的都是陶瓷材料烧结合成， 其 粘接性得到极大提高， 具有较高的机械强度， 适用于下道工序生产安装的制作， 适用于终端成品应用的各种机械强度的需要。
(3) 陶瓷基座与芯片的热膨胀系数相匹配。 在实际使用中， 热膨胀系数枏 匹配更能保证产品耐高低温度的冲击性能， 大大提高 LED产品的可靠性、 稳定 性。
(4) 耐环境变化性能优越， 下陶瓷层和上陶瓷层都是陶瓷的材料， 上下陶 瓷层结合改用无机熔封介质材料烧结的连接工艺， 使得上下两陶瓷层材料热膨 胀系数一致， 当温度变大时， 不会出现漏气现象， 气密性得以保证， 保护了芯 片及其封装材料， 从而提高了 LED产品的耐环境性。 附图说明
下面结合附图和实施例对本发明进一步说明。
图 1是现有陶瓷 LED封装基座的整体结构侧视图;
图 2是现有陶瓷 LED封装基座的整体结构俯视图;
图 3是本发明实施例一的整体结构侧视图；
图 4是本发明实施例一的整体结构俯视图；
图 5是本发明实施例二的整体结构侧视图；
图 6是本发明实施例二的整体结构俯视图；
图 7是本发明实施例三的整体结构侧视图；
图 8是本发明实施例三的整体结构俯视图； 图 9是本发明实施例四的整体结构侧视图；
图 10是本发明实施例四的整体结构俯视图。
附图标记说明：
1、 贴片区 2、 打线区 3、 底部焊盘
4、 电导通孔 5、 反射杯 6、 散热焊盘
7、 光学透镜安装区 8、 二次光学组件安装区 9、 高导热柱
10、 上陶瓷层 11、 下陶瓷层 12、 无机介质 具体实施方式
参照图 3至图 10， 本发明是这样实施的：
在图 3和图 4中， 一种高功率 LED陶瓷封装基座由上陶瓷层 10和下陶瓷层 11 构成， 上陶瓷层 10设有反射杯 5、光学透镜安装区 7和二次光学组件安装区 8， 下 陶瓷层 11用于安装芯片并实现与底层电极电导通， 下陶瓷层 11上侧设有用于安 装芯片的贴片区 1和通过焊接导线连接芯片电极的打线区 2， 下陶瓷层 11下侧设 有通过基座金属化布线实现与芯片两个电极连接的底部焊盘 3， 基座还设有用于 连接上下两层金属化布线以实现上下电导通的电导通孔 4， 该电导通孔 4可设在 基座的内部或边缘。 上陶瓷层 10中的反射杯 5起到聚光及反射增加亮度的作用， 下陶瓷层 11和上陶瓷层 10可以由相同的氧化铝或氮化铝陶瓷材料制成； 也可由 不相同的陶瓷材料制成， 下陶瓷层 11由氧化铝或氮化铝陶瓷材料制成， 上陶瓷 层 10由 LTCC材料制成。上陶瓷层 10和下陶瓷层 11通过无机介质 12烧结的方式连 接， 用于提高封装基座整体机械强度及散热性能， 在本实施例中， 无机介质 12 为无机熔封介质材料， 高温氧化铝和氮化铝陶瓷材料的热导率分别为 18~20W/mK和 170~230 W/mK。
下陶瓷层 11设有相连的高导热柱 9和散热焊盘 6， 高导热柱 9设于下陶瓷 层 11内部， 高导热柱 9的上侧与贴片区相连接， 高导热柱 9用于将芯片产生的 热导出， 散热焊盘 6设于下陶瓷层 11的下侧， 用于将高导热柱 9导出的热散逸 出来， 高导热柱 9的下侧与散热焊盘 6相连接。
在图 5和图 6的实施例二中， 其和实施例一设置用于安装芯片的贴片区 1 数量一样，均为一个。在图 1和图 8的实施例三以及图 9和图 10的实施例四中， 设置有三个用于安装芯片的贴片区 1。其也可以根据不同的需要设置不同数量的 贴片区 1。
在本实施例中， 高导热柱 9由银金属制成， 热导率约为 430 W/mK， 另外高 导热柱 9也可以由银、 钨、 钼或铜等金属填充而成， 用于增强陶瓷封装基座纵 向的传热效果。
以上所述， 仅是本发明一种高功率 LED陶瓷封装基座的较佳实施例而已， 并非对本发明的技术范围作任何限制， 凡是依据本发明的技术实质对上面实施 例所作的任何细微修改、 等同变化与修饰， 均仍属于本发明技术内容的范围内。
s

Claims

权 利 要 求
1、一种高功率 LED陶瓷封装基座，该基座由上陶瓷层（ 10 )和下陶瓷层（ 11 ) 构成， 上陶瓷层 （10)提供反射杯 （5)， 在上陶瓷层 （10) 还设有用于安装光 学透镜用的光学透镜安装区（7)和用于安装二次光学组件的二次光学组件安装 区（8)，下陶瓷层（11 )用于安装芯片并实现与底层电极电导通，下陶瓷层（11 ) 上侧设有用于安装芯片的贴片区 （1 ) 和通过焊接导线连接芯片电极的打线区 (2)， 下陶瓷层 （11 ) 下侧设有通过基座金属化布线实现与芯片两个电极连接 的底部焊盘 （3)， 基座还设有用于连接上下两层金属化布线以实现上下电导通 的电导通孔（4)， 该电导通孔（4)可设在基座的内部或边缘， 上陶瓷层 （10) 中的反射杯 (5)起到聚光及反射增加亮度的作用， 本发明的特征在于： 所述的 上陶瓷层 （10) 和下陶瓷层 （11 ) 由相同或不同的陶瓷材料制成， 两陶瓷层间 用无机介质（12)烧结方式连接， 用于提高封装基座整体机械强度及散热性能， 高温氧化铝和氮化铝陶瓷材料的热导率分别为 18~20W/mK和 170~230 W/mK。
2、权利要求 1所述的一种高功率 LED陶瓷封装基座，其特征在于所述的无 机介质（12) 为无机熔封介质材料。
3、根据权利要求 1所述的一种高功率 LED陶瓷封装基座，其特征在于所述 的反射杯 （5) 由氧化铝或氮化铝材料制成， 在反射杯 （5) 的反射面上电镀或 真空溅射金属层， 用于提高反射杯 （5) 的反射率。
4、根据权利要求 1所述的一种高功率 LED陶瓷封装基座，其特征在于所述 的反射杯（5)用 LTCC材料制成， 依靠材料自身良好的反光性提高反射杯（5) 的反射率。
5、根据权利要求 1所述的一种高功率 LED陶瓷封装基座，其特征在于所述 的下陶瓷层（11 )可以设有多个相连的高导热柱（9)和散热焊盘（6)， 高导热 柱（9)设于下陶瓷层（11 ) 内部， 高导热柱（9).的上侧与贴片区（1 )相连接， 高导热柱（9) 用于将芯片产生的热导出， 散热焊盘（6) 设于下陶瓷层 （11 ) 的下侧， 用于将高导热柱 （9) 导出的热散逸出来， 高导热柱 （9) 的下侧与散 热焊盘 （6)相连接。
6、根据权利要求 5所述的一种高功率 LED陶瓷封装基座，其特征在于所述 的高导热柱（9)由银、钨、钼或铜金属填充而成， 用于增强基座纵向传热效果。
7、 一种高功率 LED陶瓷封装基座的生产工艺， 其特征在于：
上陶瓷层 （10) 先经过原料分散， 再经压制成型和烧结而成；
下陶瓷层（11 )先经过原料分散， 再经成型、 切片、冲孔、 灌封、 平面印刷、 叠层和压槽工序， 最后经烧结制作而成；
在上述上陶瓷层（10)和下陶瓷层（11 )制作完成后， 将上陶瓷层（10)叠 设于下陶瓷层 （11 ) 上侧， 上下层之间放置无机介质材料 （12)再经对位、 定 位烧结结合和电镀制成陶瓷封装基座。
8、根据权利要求 7所述的高功率 LED陶瓷封装基座的生产工艺，其特征在 于所述的下陶瓷层 （11 ) 用银或铜为金属化材料， 下陶瓷层 （11 ) 先经过原料 分散， 再经成型、 切片、 冲孔、 压槽、 排胶、 印孔、 平面印刷工序， 最后经烧 结制作而成。
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JP2007095866A (ja) * 2005-09-28 2007-04-12 Sumitomo Metal Electronics Devices Inc セラミック基板の製造方法
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CN113270240A (zh) * 2021-05-17 2021-08-17 深圳聚德寿科技有限公司 一种陶瓷平膜压阻芯片及其制备方法
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