CN201634760U

CN201634760U - MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate

Info

Publication number: CN201634760U
Application number: CN2010200331336U
Authority: CN
Inventors: 陈国荣; 莫晓亮; 刘晓萌
Original assignee: Fudan University
Current assignee: Fudan University
Priority date: 2010-01-15
Filing date: 2010-01-15
Publication date: 2010-11-17
Anticipated expiration: 2020-01-15

Abstract

The utility model belongs to the technical field of MOCVD (Metal Organic Chemical Vapor Deposition) reaction equipment, in particular to an MOCVD reactor. The MOCVD reactor comprises a reaction cavity, wherein a substrate tray for placing a substrate is arranged in the reaction cavity and can be rotated through mechanical transmission; and the heater and the substrate are sealed by vacuum in a film growth process so as to be completely isolated, thus reaction gas is impossible in direct contact with a heating assembly, thereby the design is simplified. Meanwhile, a substrate replacement mechanism is adopted and can move to a substrate replacement position after the reaction is finished so as to ensure that operating personnel can conveniently replace the substrate without opening the reaction cavity.

Description

A kind of substrate rotation and the MOCVD reactor of separating with well heater

Technical field

The utility model belongs to metal-organic chemical vapor deposition equipment conversion unit (MOCVD) technical field, the MOCVD reactor that is specifically related to a kind of substrate rotation and separates with well heater.

Background technology

Be metal-organic chemical vapor deposition equipment (MOCVD; Metal Organic Chemical VaporDeposition); it is the key equipment of compound semiconductor epitaxial investigation of materials and production; be particularly suitable for the large-scale industrial production of compound semiconductor functional structure material; be the irreplaceable core semiconductor equipment of other semiconductor devices; being the main means of producing semiconductor photoelectric device and microwave device material in the world today, is that the current information industry development, national defence new and high technology break through indispensable strategic high-tech semiconductor equipment.At present gallium nitride material has obtained large-scale application at the aspects such as LED of preparation blue laser and semiconductor lighting, wherein the MOCVD system key equipment that is absolutely necessary.In addition, the MOCVD system also is the gan high-power electronic device of wave bands such as research and development world-class S, C, X, K and Q and the indispensable basic means that high-power solid switch device, high-end Laser Devices and efficient can reach the opto-electronic devices such as solar cell more than 40%.MOCVD equipment dependence on import for a long time, cost an arm and a leg, not only expend a large amount of financial resources but also cause the semiconductor light source price to occupy high-order, unfavorable popularization, owing to do not grasp the key equipment technology, greatly restrict the raising of material technology and device performance conversely, restricted further developing of China's photoelectronic industry, also become the bottleneck of the high-end opto-electronic device of development China.What is more, even import also is subjected to many restrictions.This just requires us can oneself grasp MOCVD the equipment particularly design and the manufacturing technology of reaction chamber, thereby close fit designs and Technology personnel tackle key problems jointly, otherwise has little scope for one's talents.So on the one hand the production domesticization of MOCVD equipment itself for China's photoelectronic industry to reduce cost, promote semiconductor lighting application etc. most important, on the other hand, preparing high-end opto-electronic device, not grasp equipment manufacturing technology just difficult to move even one step at all.There are following shortcomings in MOCVD reactor design commonly used at present: 1. heating member is among the reaction chamber, has shortened the work-ing life of expensive heater block so greatly, also makes heater block become the potential source of pollution simultaneously.2. only adopt single cell structure mostly, after each epitaxy is finished, must open the reaction chamber substrate of removing stage makeup and costume.Potential safety hazard is lost time, brought to such mode in a large number; Concerning epitaxy, such beginning and end influence epitaxial layer quality most probably.

Summary of the invention

The purpose of this utility model is for overcoming the defective that prior art exists, the MOCVD reactor that a kind of substrate rotation is provided and separates with well heater.

This MOCVD reactor comprises reaction chamber, the substrate pallet of placing substrate during this reaction chamber is established can rotate by mechanical transmission, and in the thin film growth process, adopt vacuum-sealing between well heater and substrate, thereby it is isolated fully, reactant gases can not directly contact with heating component, thereby has simplified design.Adopt more converting mechanism of substrate simultaneously, after finishing in the time of can reacting, move to substrate and change the position, make operator need not open reaction chamber and just can exchange substrate easily.

Particularly, a kind of substrate rotation of the utility model and the MOCVD reactor of separating with well heater, it is made up of MOCVD reaction chamber, heating component and substrate pallet, it is characterized in that, described substrate pallet and reaction chamber constitute enclosed space, and reaction chamber and heating component are kept apart fully.

In the utility model, described heating component includes well heater, thermopair and heating current iontophoresis electrode.

In the utility model, substrate pallet and reaction chamber constitute enclosed space by seal with elastometic washer.

In the utility model, heating component links to each other with the substrate pallet, and heating component can move with respect to reaction chamber with the substrate pallet, and can be in thin film growth process, and substrate bracket spirals then heating component keeps motionless.In this process, can keep heating component and the isolation of reaction chamber simultaneously and avoid contacting of reactant gases and heating component, avoid the pollution of heating component reaction chamber.Improve the homogeneity of film composition and thickness, do not destroyed the stopping property in quartz reaction chamber at the same time.Reduced particular requirement, simplified the complexity and the design technology of processing simultaneously, prolonged the work-ing life of heater block the material of heater block.

In the utility model, described MOCVD reactor also comprises more changing device of substrate, and described substrate more changing device is made up of pretreatment chamber, substrate exchange mechanism, push-pull valve.After film growth finished, the position when heating component and substrate pallet can leave former the reaction can move to substrate switch position.Under the situation of keeping reaction chamber vacuum or inert atmosphere, exchange substrate easily.

In the utility model, the substrate pallet of MOCVD device can improve the homogeneity of film composition and thickness by outside mechanical transmission rotation in film growth.Do not destroy the stopping property in quartz reaction chamber at the same time.

The utility model MOCVD reactor can make the vacuum insulation of heating component and reaction chamber, avoided contacting of reactant gases and heating component, and heating component can not polluted the formation of reaction chamber.Saved a large amount of operating times simultaneously, reduced potential safety hazard, improved the stability of product simultaneously and prolonged a layer quality.

For the ease of understanding, below will describe in detail of the present utility model by concrete drawings and Examples.It needs to be noted, specific examples and accompanying drawing only are in order to illustrate, obviously those of ordinary skill in the art can illustrate according to this paper, in scope of the present utility model the utility model is made various corrections and change, these corrections and change are also included in the scope of the present utility model.

Description of drawings

The relative position synoptic diagram of reaction chamber when Fig. 1 exchanges substrate and heating component, substrate pallet;

The relative position synoptic diagram of reaction chamber during Fig. 2 film growth and heating component, substrate pallet.

Number in the figure: 1 is the reactant gases introducing port; 2 is venting port; 3 is the quartz reaction chamber; 4 is substrate; 5 is well heater; 6 is the quartz substrate pallet; 7 is thermopair; 8 is the heating current iontophoresis electrode; 9 is pretreatment chamber; 10 is the substrate exchange mechanism; 11 is push-pull valve; 12 is vacuum rotation introducing mechanism a; 13 is gear drive; 14 is fire wall and heating component holder part; 15 is the substrate switch room; 16 is vacuum rotation introducing mechanism b; 17 is the heating component rotation motor; 18 is the heating component hoisting appliance.

Embodiment

As depicted in figs. 1 and 2, this MOCVD equipment is mainly combined by gas introduction port 1, reaction chamber 2, gas discharge outlet 3, three parts.

When exchanging substrate as Fig. 1, heating component (well heater 5, thermopair 7, heating current iontophoresis electrode 8) with the effect of substrate pallet 6 by heating component hoisting appliance 18, drop to together in the substrate switch room 15, simultaneously reaction chamber 3 and substrate switch room 15 are vacuumized, get rid of the influence of dust and residual gas.Open push-pull valve 11 then, substrate 4 pretreated in pretreatment chamber 9 is placed on the quartz substrate pallet 6 by substrate exchange mechanism 10.Quartz substrate pallet 6 links to each other with the inner core of vacuum rotation introducing mechanism a12, and this inner core is by geartransmission 13 rotations, and the vacuum rotation introducing mechanism b16 axle that the exocoel body wall is passed in its axle center of gear and of drive inner core links to each other.

During as Fig. 2 film growth, after the substrate placement finishes, close push-pull valve 11 then, heating component (well heater 5, thermopair 7, heating current iontophoresis electrode 8) pass fire wall and 14 rises of heating component holder part with substrate pallet 6, the part of heating component contacts with the outer wall of reaction chamber 3, and by the sealing of RUBBER O circle, heating unit 5 is just completely cut off the outside in quartz reaction chamber 3 fully.Reaction chamber 3 feeds reactant gases from gas introduction port 1, and well heater 5 beginning heated substrates 4 are to preset temperature.Simultaneously, substrate pallet 6 begins rotation by

outside transmission

16,17, and this moment heating component relatively and cavity 3 be motionless.Reactant gases is under high temperature action, and film begins to be deposited on the substrate 4, grows into till the required thickness always.The stop supplies reactant gases, stop heated substrates, heating component (well heater 5, thermopair 7, heating current iontophoresis electrode 8) drops to specified location simultaneously with substrate pallet 6, open the substrate 4 of push-pull valve 11, the long good film of substrate exchange mechanism 10 taking-ups then successively, put into pretreated light substrate, repeat above thin film growth process once more.

Claims

1. substrate rotation and the MOCVD reactor separated with well heater, comprise MOCVD reaction chamber, heating component, substrate pallet, it is characterized in that: described heating component links to each other with the sealing of substrate pallet, heating component moves with respect to reaction chamber with the substrate pallet, wherein the substrate pallet rotates by the exterior mechanical transmission, and the heating component maintenance is motionless, and described heating component and reaction chamber are isolation.

2. the MOCVD reactor of pressing the described substrate rotation of claim 1 and separating with well heater is characterized in that described heating component links to each other by seal with elastometic washer with the substrate pallet.

3. the MOCVD reactor of pressing the described substrate rotation of claim 1 and separating with well heater, it is characterized in that: this MOCVD reactor also comprises more changing device of substrate.

4. the MOCVD reactor of pressing the described substrate rotation of claim 3 and separating with well heater, it is characterized in that: described substrate more changing device is made up of pretreatment chamber, substrate exchange mechanism, push-pull valve.

5. the MOCVD reactor of pressing the described substrate rotation of claim 3 and separating with well heater, it is characterized in that: after film growth finished, heating component and substrate pallet were more changed substrate in the changing device at substrate.