CN114657536B - MOCVD equipment for ZnO film growth - Google Patents
MOCVD equipment for ZnO film growth Download PDFInfo
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- CN114657536B CN114657536B CN202210290119.1A CN202210290119A CN114657536B CN 114657536 B CN114657536 B CN 114657536B CN 202210290119 A CN202210290119 A CN 202210290119A CN 114657536 B CN114657536 B CN 114657536B
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- vibration reduction
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 239000007921 spray Substances 0.000 claims abstract description 43
- 230000009467 reduction Effects 0.000 claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 19
- 230000007246 mechanism Effects 0.000 claims abstract description 13
- 239000002390 adhesive tape Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 61
- 239000010408 film Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000002156 mixing Methods 0.000 claims description 20
- 239000006096 absorbing agent Substances 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 239000006260 foam Substances 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 230000008859 change Effects 0.000 abstract description 4
- 238000005507 spraying Methods 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 65
- 239000011787 zinc oxide Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 238000013016 damping Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B03—SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C—MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
- B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
- B03C3/017—Combinations of electrostatic separation with other processes, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F15/00—Suppression of vibrations in systems; Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion
- F16F15/02—Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems
- F16F15/04—Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems using elastic means
- F16F15/06—Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems using elastic means with metal springs
- F16F15/067—Suppression of vibrations of non-rotating, e.g. reciprocating systems; Suppression of vibrations of rotating systems by use of members not moving with the rotating systems using elastic means with metal springs using only wound springs
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Aviation & Aerospace Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses MOCVD equipment for growing ZnO films, which comprises a reaction chamber, a gas transportation system, a control system, a reaction processing system and a vibration reduction balancing system, wherein the reaction processing system comprises a spray gun device, a rotating assembly, a placing platform and a lifting mechanism, the reaction chamber is provided with a thermochromic adhesive tape, and the vibration reduction balancing system comprises a vibration reduction assembly and a balancing assembly. According to the invention, by setting the temperature color-changing adhesive tape for an operator who directly feeds back the temperature change, the temperature condition of MOCVD equipment can be quickly known, and the temperature can be timely adjusted; the lifting mechanism is arranged for quickly adjusting the height of the first platform, so that MOCVD equipment can be used for placing and processing substrate materials with different thicknesses according to requirements, znO films with different thickness requirements can be produced, and applicability is improved; the vibration reduction balance system is used for providing vibration reduction function and horizontal correction function, so that the balance and uniformity of spraying are improved, and the product quality is improved.
Description
Technical Field
The invention relates to the technical field of ZnO film manufacture, in particular to MOCVD equipment for ZnO film growth.
Background
Zinc oxide (ZnO) is another important wide bandgap semiconductor material that is being studied in the world following gallium nitride (GaN), and has a bandgap and lattice constant very close to those of GaN, the same crystal form, and similar photoelectric properties. ZnO also has higher melting point and exciton binding energy, higher exciton gain, low epitaxial growth temperature, low cost, easy etching, more convenient subsequent processing technology and other characteristics superior to GaN, and has larger development potential than GaN. There are various methods for growing ZnO thin film materials, including evaporation, magnetron sputtering, ion beam sputtering, pulsed Laser Deposition (PLD), metal Organic Compound Vapor Deposition (MOCVD), molecular Beam Epitaxy (MBE), and the like. Sputtering is the most commonly used method, but only a polycrystalline film with poor quality can be grown, and the preparation requirement of a plurality of devices cannot be met. The MOCVD method can grow ZnO films with large area, uniformity and higher quality, and is suitable for industrial production. Thus, MOCVD equipment for preparing ZnO film material and exploring new technological process are the problems to be solved in the scientific and industrial world.
The existing MOCVD equipment for growing ZnO film generally comprises a reaction chamber, a gas transportation system, a control system and a gas mixing chamber, and the working principle is that Zn alkyl compound diethyl zinc [ Zn (C2H 5) 2] or dimethyl zinc [ Zn (CH 3) 2] is used as a Zn source, high-purity oxygen is introduced as an O source, and then the ZnO film grows on a sapphire (Si, gaAs or ZnO and other substrates) substrate in the reaction chamber. However, the existing MOCVD equipment for growing ZnO films has the following problems which are difficult to solve when growing ZnO films: 1. when the existing MOCVD equipment for growing the ZnO film is used, a large amount of heat is generated in the equipment, people need to touch the equipment through limbs to know the temperature of the equipment, the temperature cannot be immediately fed back to the people in a visual mode, internal elements are damaged due to the fact that the temperature is too high or too low, accidents are easy to occur, certain potential safety hazards exist, and the production quality of the growth of the ZnO film is affected by the instability of the temperature; 2. the existing equipment has no vibration reduction and balance functions, vibration or external vibration can be generated when the equipment is used and transmitted to the equipment, and the vibration can lead to the uniformity of the growth of ZnO raw materials on a sapphire (Si, gaAs or other substrates such as ZnO) substrate, so that the growth quality of ZnO films is affected; 3. the existing gas mixing chamber of MOCVD equipment usually adopts a filter screen for filtering, but the filter effect of the filter screen is poor, and impurities such as dust and the like possibly mixed in the gas mixing chamber flow into the reaction chamber to influence the reaction quality; 4. the platform of current MOCVD equipment is mostly fixed, can't carry out quick adjustment according to the thickness demand of product, and the suitability is low, and has only a driving source, when the driving source breaks down, the unable normal rotatory action of platform influences subsequent production efficiency.
Disclosure of Invention
The invention provides MOCVD equipment for growing ZnO films, which aims at the defects of the prior art.
The technical scheme adopted by the invention for achieving the purpose is as follows:
The utility model provides a MOCVD equipment that ZnO film growth used, its includes MOCVD equipment body, MOCVD equipment body includes reaction chamber, gas transportation system, control system, reaction processing system and damping balance system, gas transportation system sets up the top of reaction chamber, damping balance system sets up the below of reaction chamber, the reaction chamber is equipped with the reaction storehouse, reaction processing system sets up in the reaction storehouse, reaction processing system includes spray gun device, rotating assembly, place platform and elevating system, place the platform setting is in on the rotating assembly, elevating system sets up on the place platform, elevating system is equipped with platform one, platform one is equipped with heating plate and tray, the tray sets up the top of heating plate, platform one with be equipped with buckle connection structure between the tray, the reaction chamber still is equipped with reserve drive assembly, control system with all be equipped with wire constitution electric connection between gas transportation system, reaction processing system, damping balance system and the reserve drive assembly, the outside of reaction chamber still is equipped with the temperature and discolours and glues the subsides.
The reaction chamber comprises a base, a plurality of side walls and an upper flange, wherein the gas transportation system comprises a gas mixing chamber, a main gas passage and two auxiliary gas passages, the main gas passage is arranged on the gas mixing chamber, the two auxiliary gas passages are respectively arranged on the side walls of the gas mixing chamber in a mirror image opposite mode, a radio frequency plasma generator is arranged on the outer side of the main gas passage, the upper flange is provided with a through hole, the through hole is provided with a filtering component, the gas mixing chamber is arranged above the through hole and is communicated with the reaction chamber through the through hole, and the base is further provided with a gas pumping hole.
The filter assembly comprises a filter screen and an electrostatic absorber, wherein the filter screen is arranged on the through hole, the electrostatic absorber is arranged on the through hole, a sealing ring is arranged between the electrostatic absorber and the through hole, and foam is arranged on the electrostatic absorber.
The zinc source spray gun and the oxygen source spray gun are respectively inserted into the inserting openings, the inserting openings are respectively provided with a plurality of buckling hooks, and the zinc source spray gun and the oxygen source spray gun are respectively provided with annular blocks which are buckled and connected.
The zinc source spray gun and the oxygen source spray gun are respectively provided with a spray head, the spray heads are respectively sleeved with a uniform gas sleeve, the tops of the spray heads are respectively provided with a plurality of small holes, equal intervals are arranged between the small holes, the lower bottom surface of the uniform gas sleeve is respectively provided with an opening slit, the equal intervals are 3-5 mm, and the width of each opening slit is 1-2 mm.
Make further improvement, rotating assembly includes rotating electrical machines and rotation axis, the rotating electrical machines sets up on the bottom of base, the rotation axis with rotating electrical machines's drive shaft coupling, the rotation axis inserts in the reaction storehouse, place the platform setting and be in on the rotation axis, elevating system includes a plurality of micro-motors, a plurality of micro-motor all is equipped with the screw rod, all the cover is equipped with the area nut bearing outward of screw rod, the outside of area nut bearing all overlaps and is equipped with the sleeve, platform one sets up on the sleeve.
The standby driving assembly comprises a first motor, a worm and a gear, wherein the gear is sleeved on the rotating shaft, the first motor is arranged on the outer side of the side wall of the reaction chamber, the worm is connected with a driving shaft of the first motor, and the outer side of the worm is connected with the outer side of the gear in a fitting mode.
The first platform is provided with a groove, the heating plate is arranged in the groove, the buckle connecting structures comprise a plurality of first buckles, the first buckles are respectively arranged on the side faces of the first platform, and the first buckles are buckled with the tray on the first platform.
The heating plate is a resistance heating plate, the heating plate is radial, and the heating plate is made of antioxidant molybdenum plates.
The vibration reduction balance system comprises a vibration reduction assembly and a balance assembly, wherein the vibration reduction assembly comprises a plurality of vibration absorbers, the vibration absorbers are all provided with mounting seats, the base is arranged on the mounting seats, the balance assembly is arranged below the vibration reduction assembly, the balance assembly comprises a level detection sensor, a driver and a plurality of servo lifting electric cylinders, the driver and the level detection sensor are arranged on the bottom surface of the base, and the servo lifting electric cylinders are connected with the driver.
The invention has the beneficial effects that: according to the invention, by arranging the temperature color-changing adhesive tape for operators feeding back temperature change intuitively, the operators can quickly know the temperature condition of MOCVD equipment and adjust the temperature in time, so that the condition that the MOCVD equipment components are damaged due to overhigh or overlow temperature when the MOCVD equipment works is prevented, the condition that the ZnO film grows due to unstable temperature is effectively prevented, the production quality of the ZnO film growth is improved, and the use safety is provided; the quick assembly and disassembly of the zinc source spray gun and the oxygen source spray gun are facilitated by arranging the buckling hooks and the annular blocks, so that the maintenance efficiency is improved; the filter assembly is used for providing double filtration, so that the mixed gas of the gas mixing chamber is filtered, the cleanliness of the mixed gas is ensured, and the growth quality of the subsequent ZnO film is improved; the lifting mechanism is arranged for quickly adjusting the height of the first platform, so that MOCVD equipment can be used for placing and processing substrate materials with different thicknesses according to requirements, znO films with different thickness requirements can be produced, and applicability is improved; the standby driving component is used as a standby driving source, so that when the rotating motor fails and stops, the standby driving component can drive the tray to rotate, and normal use of MOCVD equipment is ensured; the vibration absorbing assembly is used for providing a vibration absorbing function, so that vibration generated by MOCVD equipment or external vibration is absorbed, the influence of the vibration is reduced, the balance assembly is combined for automatically correcting and leveling, the horizontal balance of the tray is ensured, the balance and uniformity of spraying are improved, and the product quality is improved.
The invention will be further described with reference to the drawings and the detailed description.
Drawings
FIG. 1 is a schematic overall sectional view of an MOCVD apparatus for growing a ZnO thin film of the present example;
Fig. 2 is a schematic sectional view of the micro motor of the present embodiment;
FIG. 3 is a schematic cross-sectional view of the first stage, the heater chip and the tray of the embodiment after being connected;
FIG. 4 is a schematic cross-sectional view of the shock absorber of the present embodiment;
FIG. 5 is an enlarged schematic view of FIG. 1A;
fig. 6 is a schematic structural diagram of the gas equalizing sleeve of the present embodiment;
Fig. 7 is a schematic top view of the heating sheet of the present embodiment.
Detailed Description
The following description is of the preferred embodiments of the invention, and is not intended to limit the scope of the invention.
Referring to fig. 1-7, an MOCVD equipment for growing a ZnO film comprises a MOCVD equipment body 1, the MOCVD equipment body 1 comprises a reaction chamber 2, a gas transportation system 3, a control system 4, a reaction processing system 5 and a vibration reduction balancing system 6, the gas transportation system 3 is arranged above the reaction chamber 2, the vibration reduction balancing system 6 is arranged below the reaction chamber 2, the reaction chamber 2 is provided with a reaction chamber, the reaction processing system 5 is arranged in the reaction chamber, the reaction processing system 5 comprises a spray gun device 7, a rotating assembly 8, a placing platform 9 and a lifting mechanism 10, the placing platform 9 is arranged on the rotating assembly 8, the lifting mechanism 10 is arranged on the placing platform 9, the lifting mechanism 10 is provided with a platform one 100, the platform one 100 is provided with a heating plate 101 and a tray 102, the tray 102 is arranged above the heating plate 101, a buckle connection structure 11 is arranged between the first platform 100 and the tray 102, the reaction chamber 2 is also provided with a standby driving component 12, the control system 4, the gas transportation system 3, the reaction processing system 5, the vibration reduction balance system 6 and the standby driving component 12 are all provided with wires to form electric connection, the outer side of the reaction chamber 2 is also provided with a thermochromic adhesive tape 13, the thermochromic adhesive tape 13 is made of thermochromic materials and is used for feeding back operators with visual temperature change, the operators can quickly know the temperature condition of the MOCVD equipment body 1 and timely adjust the temperature, the situation that the MOCVD equipment body 1 is damaged due to the too high or too low temperature during the working of the MOCVD equipment body 1 is prevented, the situation that ZnO film grows due to unstable temperature is effectively prevented, the production quality of ZnO film growth is improved.
The reaction chamber 2 comprises a base 20, a plurality of side walls 21 and an upper flange 22, the gas transportation system 3 comprises a gas mixing chamber 30, a main gas passage 31 and two auxiliary gas passages 32, the main gas passage 31 is arranged on the gas mixing chamber 30, the two auxiliary gas passages 32 are respectively arranged on the side walls of the gas mixing chamber 30 in a mirror image opposite mode, a radio frequency plasma generator 33 is arranged on the outer side of the main gas passage 31, the upper flange 22 is provided with a through hole, the through hole is provided with a filter assembly 23, the gas mixing chamber 30 is arranged above the through hole and is communicated with a reaction bin through the through hole, and the base 20 is also provided with a gas pumping hole which is provided with a valve.
The lateral wall of the gas mixing chamber 30 is provided with a first through hole, the filter component 23 comprises a filter screen 230 and an electrostatic absorber 231, the filter screen 230 is arranged on the first through hole, the electrostatic absorber 231 is arranged on the first through hole, a sealing ring is arranged between the electrostatic absorber 231 and the first through hole, the electrostatic absorber 213 is provided with foam, and the filter component 23 is used for providing dual filtering effect, so that the mixed gas of the gas mixing chamber 30 is filtered, the cleanliness of the mixed gas is guaranteed, and the growth quality of a subsequent ZnO film is improved.
The left and right reaction chamber 2 lateral walls of the reaction chamber 2 are respectively provided with an insertion opening, the spray gun device 7 comprises a zinc source spray gun 70 and an oxygen source spray gun 71, the zinc source spray gun 70 and the oxygen source spray gun 71 are respectively inserted into the insertion openings, the insertion openings are respectively provided with a plurality of buckling hooks 24, the zinc source spray gun 70 and the oxygen source spray gun 71 are respectively provided with an annular block 72, the buckling hooks 24 are buckled and connected with the annular blocks 72, and the buckling hooks 24 and the annular blocks 72 are convenient for the quick disassembly and assembly of the zinc source spray gun 70 and the oxygen source spray gun 71, so that the maintenance efficiency is improved.
The zinc source spray gun 70 and the oxygen source spray gun 71 are respectively provided with a spray head, the spray heads are respectively sleeved with a uniform gas sleeve 73, the tops of the spray heads are respectively provided with a plurality of small holes, equal intervals are arranged between the small holes, the lower bottom surface of the uniform gas sleeve 73 is respectively provided with an opening slit, the equal intervals are 3-5 mm, and the width of each opening slit is 1-2 mm.
The rotating assembly 8 comprises a rotating motor 80 and a rotating shaft 81, the rotating motor 80 is arranged at the bottom of the base 20, the rotating shaft 81 is connected with a driving shaft of the rotating motor 80, the rotating shaft 81 is inserted into the reaction bin, the placing platform 9 is arranged on the rotating shaft 81, the lifting mechanism 10 comprises a plurality of micro motors 100, the micro motors 100 are all provided with screws 101, nut bearings 102 are sleeved outside the screws 101, sleeves 103 are sleeved outside the nut bearings 102, the platform I100 is arranged on the sleeves 103, the rotating assembly 8 is used for driving substrate materials to rotate at a high speed, and the lifting mechanism 10 is used for rapidly adjusting the height of the platform I100, so that the MOCVD equipment body 1 can be used for placing and processing the substrate materials with different thicknesses according to requirements, znO films with different thickness requirements can be produced, and applicability is improved.
The standby driving assembly 12 comprises a first motor 120, a worm 121 and a gear 122, the gear 122 is sleeved on the rotating shaft 81, the first motor 120 is arranged on the outer side of the side wall 21 of the reaction chamber 2, the worm 121 is connected with a driving shaft of the first motor 120, the outer side of the worm 121 is connected with the outer side of the gear 122 in a fit mode, the standby driving assembly 12 is used as a standby driving source, and accordingly when the rotating motor 80 stops due to faults, the standby driving assembly 12 can drive the tray 102 to rotate, and normal use of the MOCVD equipment body 1 is guaranteed.
The first platform 100 is provided with a groove, the heating plate 101 is arranged in the groove, the buckle connecting structures 11 comprise a plurality of first buckles and a plurality of first buckles are respectively arranged on the side face of the first platform 100, the tray 102 is buckled on the first platform 100 by the first buckles and the first buckles, the buckle connecting structures 11 are convenient for the quick mounting of the heating plate 101 and the tray 102 on the first platform 100, so that quick replacement is facilitated, maintenance replacement efficiency and time are improved, and normal use of the MOCVD equipment body 1 is ensured.
The heating sheet 101 is a resistive heating sheet, the heating sheet 101 is radial, and the heating sheet 101 is made of an antioxidant molybdenum sheet.
The vibration reduction balance system 6 comprises a vibration reduction assembly 60 and a balance assembly 61, the vibration reduction assembly 60 comprises a plurality of vibration absorbers, the vibration absorbers are all provided with a mounting seat 600, the base 20 is arranged on the mounting seat 600, the balance assembly 61 is arranged below the vibration reduction assembly 60, the balance assembly 61 comprises a level detection sensor 610, a driver 611 and a plurality of servo lifting electric cylinders 612, the driver 611 and the level detection sensor 610 are arranged on the bottom surface of the base 20, the servo lifting electric cylinders 612 are connected with the driver 611, the vibration reduction assembly 60 is used for providing a vibration reduction function, so that vibration generated by the MOCVD equipment body 1 or external vibration is absorbed, the influence of vibration is reduced, the balance assembly 61 is used for automatically correcting leveling, the level balance of the tray 102 is ensured, the spraying balance and uniformity are improved, the uniformity of ZnO film thickness and quality is greatly improved, and the product quality is improved.
According to the invention, by arranging the temperature color-changing adhesive tape for operators feeding back temperature change intuitively, the operators can quickly know the temperature condition of MOCVD equipment and adjust the temperature in time, so that the condition that the MOCVD equipment components are damaged due to overhigh or overlow temperature when the MOCVD equipment works is prevented, the condition that the ZnO film grows due to unstable temperature is effectively prevented, the production quality of the ZnO film growth is improved, and the use safety is provided; the quick assembly and disassembly of the zinc source spray gun and the oxygen source spray gun are facilitated by arranging the buckling hooks and the annular blocks, so that the maintenance efficiency is improved; the filter assembly is used for providing double filtration, so that the mixed gas of the gas mixing chamber is filtered, the cleanliness of the mixed gas is ensured, and the growth quality of the subsequent ZnO film is improved; the lifting mechanism is arranged for quickly adjusting the height of the first platform, so that MOCVD equipment can be used for placing and processing substrate materials with different thicknesses according to requirements, znO films with different thickness requirements can be produced, and applicability is improved; the standby driving component is used as a standby driving source, so that when the rotating motor fails and stops, the standby driving component can drive the tray to rotate, and normal use of MOCVD equipment is ensured; the vibration absorbing assembly is used for providing a vibration absorbing function, so that vibration generated by MOCVD equipment or external vibration is absorbed, the influence of the vibration is reduced, the balance assembly is combined for automatically correcting and leveling, the horizontal balance of the tray is ensured, the balance and uniformity of spraying are improved, and the product quality is improved.
The present invention is not limited to the above embodiments, and other MOCVD equipment for ZnO film growth obtained by using the same or similar structure, apparatus, process or method as the above embodiments of the present invention is within the scope of the present invention.
Claims (10)
1. MOCVD equipment for ZnO film growth comprises an MOCVD equipment body, and is characterized in that: the MOCVD equipment body comprises a reaction chamber, a gas transportation system, a control system, a reaction processing system, a vibration reduction balance system and a filtering component, wherein the gas transportation system is arranged above the reaction chamber, the vibration reduction balance system is arranged below the reaction chamber, the reaction chamber is provided with a reaction bin, the reaction processing system is arranged in the reaction bin, the reaction processing system comprises a spray gun device, a rotating component, a placing platform and a lifting mechanism, the placing platform is arranged on the rotating component, the lifting mechanism is arranged on the placing platform, the lifting mechanism is provided with a first platform, the first platform is provided with a heating plate and a tray, the tray is arranged above the heating plate, a buckle connection structure is arranged between the first platform and the tray, the reaction chamber is further provided with a standby driving component, the control system is electrically connected with the gas transportation system, the reaction processing system, the vibration reduction balance system and the standby driving component through wires, and the outside of the reaction chamber is further provided with a thermochromic adhesive tape;
The filter assembly comprises a filter screen and an electrostatic absorber;
The vibration reduction balance system comprises a vibration reduction assembly and a balance assembly, wherein the vibration reduction assembly comprises a plurality of vibration absorbers; the balance components comprise a horizontal detection sensor, a driver and a plurality of servo lifting electric cylinders;
the left and right side walls of the reaction chamber are respectively provided with an insertion opening, and the insertion openings are respectively provided with a plurality of buckling hooks.
2. The MOCVD equipment for ZnO film growth according to claim 1, wherein: the reaction chamber comprises a base, a plurality of side walls and an upper flange, the gas transportation system comprises a gas mixing chamber, a main gas passage and two auxiliary gas passages, the main gas passage is arranged on the gas mixing chamber, the two auxiliary gas passages are respectively arranged on the side walls of the gas mixing chamber in a mirror image opposite mode, a radio frequency plasma generator is arranged on the outer side of the main gas passage, the upper flange is provided with a through hole, the gas mixing chamber is arranged above the through hole and communicated with the reaction chamber through the through hole, and the base is further provided with a gas pumping hole.
3. The MOCVD equipment for ZnO film growth according to claim 2, wherein: the side wall of the air mixing chamber is provided with a first through hole, the filter screen is arranged on the first through hole, the electrostatic absorber is arranged on the first through hole, a sealing ring is arranged between the electrostatic absorber and the first through hole, and foam is arranged on the electrostatic absorber.
4. The MOCVD apparatus for growing a ZnO thin film according to claim 3, wherein: the spray gun device comprises a zinc source spray gun and an oxygen source spray gun, wherein the zinc source spray gun and the oxygen source spray gun are respectively inserted into the insertion opening, the zinc source spray gun and the oxygen source spray gun are both provided with annular blocks, and a plurality of buckling hooks are buckled and connected with the annular blocks.
5. The MOCVD apparatus for growing a ZnO film according to claim 4, wherein: the zinc source spray gun and the oxygen source spray gun are both provided with spray heads, the spray heads are all sleeved with air homogenizing sleeves, the tops of the spray heads are all provided with a plurality of small holes, equal intervals are arranged between the small holes, the lower bottom surface of the air homogenizing sleeves is provided with opening slits, the equal intervals are 3-5 mm, and the width of the opening slits is 1-2 mm.
6. The MOCVD apparatus for growing a ZnO film according to claim 5, wherein: the rotating assembly comprises a rotating motor and a rotating shaft, the rotating motor is arranged at the bottom of the base, the rotating shaft is connected with a driving shaft of the rotating motor, the rotating shaft is inserted into the reaction bin, the placing platform is arranged on the rotating shaft, the lifting mechanism comprises a plurality of micro motors, the micro motors are all provided with screws, nut bearings are sleeved outside the screws, sleeves are sleeved outside the nut bearings, and the first platform is arranged on the sleeves.
7. The MOCVD apparatus for growing a ZnO film according to claim 6, wherein: the standby driving assembly comprises a first motor, a worm and a gear, wherein the gear is sleeved on the rotating shaft, the first motor is arranged on the outer side of the side wall of the reaction chamber, the worm is connected with a driving shaft of the first motor, and the outer side of the worm is connected with the outer side of the gear in a fitting mode.
8. The MOCVD apparatus for growing a ZnO film according to claim 7, wherein: the first platform is provided with a groove, the heating plate is arranged in the groove, the buckle connecting structures comprise a plurality of first buckles, the first buckles are respectively arranged on the side faces of the first platform, and the first buckles are buckled with the tray on the first platform.
9. The MOCVD equipment for ZnO film growth according to claim 8, wherein: the heating plate is a resistance heating plate, the heating plate is radial, and the heating plate is made of an antioxidant molybdenum plate.
10. The MOCVD equipment for ZnO film growth according to claim 9, wherein: the vibration absorbers are provided with mounting seats, the base is arranged on the mounting seats, the balance assembly is arranged below the vibration absorbing assembly, the driver and the level detection sensor are arranged on the bottom surface of the base, and the servo lifting electric cylinders are connected with the driver.
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Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0953181A (en) * | 1995-08-11 | 1997-02-25 | Ebara Corp | Thin film vapor growth device |
| CN1377991A (en) * | 2002-01-30 | 2002-11-06 | 吉林大学 | MOCVD equipment and process for growing ZnO film |
| CN201634755U (en) * | 2009-12-01 | 2010-11-17 | 东莞宏威数码机械有限公司 | Shock-absorption supporting mechanism and lifting device with shock-absorption supporting mechanism |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN102306620A (en) * | 2011-09-01 | 2012-01-04 | 清华大学 | Laser annealing platform device |
| CN103422071A (en) * | 2012-05-18 | 2013-12-04 | 中国地质大学（北京） | Vacuum cavity chamber capable of rapidly changing gas-homogenizing mode |
| CN104328387A (en) * | 2014-11-25 | 2015-02-04 | 聚灿光电科技(苏州)有限公司 | Device for cleaning sprinkler head of vapor deposition device |
| CN107492490A (en) * | 2016-06-12 | 2017-12-19 | 北京北方华创微电子装备有限公司 | Film build method, aluminium nitride film build method and the electronic installation of semiconductor equipment |
| CN207843753U (en) * | 2018-02-12 | 2018-09-11 | 无锡市第五人民医院 | A kind of clinical pharmacy pallet |
| CN109417047A (en) * | 2016-07-11 | 2019-03-01 | 美科股份有限公司 | Process chuck plate, the chuck structure object with the chuck plate and the chip detachment apparatus with chuck structure object after semiconductor |
| CN211999904U (en) * | 2020-04-13 | 2020-11-24 | 东莞市伟信真空服务有限公司 | Guide roller supporting device of film coating machine |
| CN212529036U (en) * | 2020-05-08 | 2021-02-12 | 东莞市合量印刷有限公司 | Dual temperature measurement automatic rising drying equipment of green printing |
-
2022
- 2022-03-23 CN CN202210290119.1A patent/CN114657536B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0953181A (en) * | 1995-08-11 | 1997-02-25 | Ebara Corp | Thin film vapor growth device |
| CN1377991A (en) * | 2002-01-30 | 2002-11-06 | 吉林大学 | MOCVD equipment and process for growing ZnO film |
| CN201634755U (en) * | 2009-12-01 | 2010-11-17 | 东莞宏威数码机械有限公司 | Shock-absorption supporting mechanism and lifting device with shock-absorption supporting mechanism |
| CN102121098A (en) * | 2010-01-08 | 2011-07-13 | 复旦大学 | Reaction chamber with external heating mode for metal organic chemical vapor deposition system |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN102306620A (en) * | 2011-09-01 | 2012-01-04 | 清华大学 | Laser annealing platform device |
| CN103422071A (en) * | 2012-05-18 | 2013-12-04 | 中国地质大学（北京） | Vacuum cavity chamber capable of rapidly changing gas-homogenizing mode |
| CN104328387A (en) * | 2014-11-25 | 2015-02-04 | 聚灿光电科技(苏州)有限公司 | Device for cleaning sprinkler head of vapor deposition device |
| CN107492490A (en) * | 2016-06-12 | 2017-12-19 | 北京北方华创微电子装备有限公司 | Film build method, aluminium nitride film build method and the electronic installation of semiconductor equipment |
| CN109417047A (en) * | 2016-07-11 | 2019-03-01 | 美科股份有限公司 | Process chuck plate, the chuck structure object with the chuck plate and the chip detachment apparatus with chuck structure object after semiconductor |
| CN207843753U (en) * | 2018-02-12 | 2018-09-11 | 无锡市第五人民医院 | A kind of clinical pharmacy pallet |
| CN211999904U (en) * | 2020-04-13 | 2020-11-24 | 东莞市伟信真空服务有限公司 | Guide roller supporting device of film coating machine |
| CN212529036U (en) * | 2020-05-08 | 2021-02-12 | 东莞市合量印刷有限公司 | Dual temperature measurement automatic rising drying equipment of green printing |
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| CN114657536A (en) | 2022-06-24 |
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