CN107492490A - Film build method, aluminium nitride film build method and the electronic installation of semiconductor equipment - Google Patents
Film build method, aluminium nitride film build method and the electronic installation of semiconductor equipment Download PDFInfo
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- CN107492490A CN107492490A CN201610407581.XA CN201610407581A CN107492490A CN 107492490 A CN107492490 A CN 107492490A CN 201610407581 A CN201610407581 A CN 201610407581A CN 107492490 A CN107492490 A CN 107492490A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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Abstract
The present invention discloses a kind of film build method of semiconductor equipment, the aluminium nitride film build method and electronic installation of semiconductor equipment.The film build method of the semiconductor equipment of the present invention, including sputtering flow is carried out, the sputtering flow comprises the following steps：Substrate is loaded into chamber, and is positioned on the bearing base in chamber；In the case where substrate is loaded onto the situation of chamber, heating technique is carried out to chamber, the temperature in chamber is heated above or equal to predetermined temperature；Main sputtering is carried out to substrate using the target being arranged in chamber, to form film on substrate；Substrate is set out into the chamber.The film build method of semiconductor equipment, the aluminium nitride film build method of semiconductor equipment and the electronic installation of the present invention can lift the quality of film, and have the characteristics that Making programme is simple, low manufacture cost, substrate can be avoided to fall after the heating of other heating chambers on substrate the problem of producing particulate during being transferred to sputtering chamber, and reach the purpose of lifting electronic installation efficiency.
Description
Technical field
The device made the present invention relates to semiconductor technology and with this technique, more particularly to a kind of film forming of semiconductor equipment
The aluminium nitride film build method and electronic installation of method, semiconductor equipment.
Background technology
Physical vapour deposition (PVD) (physical vapor deposition, PVD) sputtering technology is widely used in half now
In the techniques such as conductor integrated circuit, light emitting diode (light emitting diode, LED), solar cell, display.
In the processing chamber of PVD sputtering equipments, typically utilize and high power dc source is being connected to sputtering target material, pass through direct current
Power supply excites the working gas in reaction chamber for plasma (plasma), and attracts the Ions Bombardment in plasma to sputter
Target, make the material of target be sputtered with this and be deposited on the substrates such as chip.Different application fields is generally to sputtering
The requirement of the technological parameters such as power, sputter rate is also different, but essentially for lifting quality of forming film and increase equipment
The striving direction of production capacity is very clear and definite.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of film build method of semiconductor equipment, the nitrogen of semiconductor equipment
Change aluminium film method and electronic installation, aluminium nitride film formed in a manner of sputtering, reached with this improve aluminium nitride film into
The purpose of film quality and lifting production capacity.
Some embodiments of the present invention provide a kind of film build method of semiconductor equipment, comprise the following steps.First, carry out
Sputter flow.Sputtering flow comprises the following steps：Substrate is loaded into chamber, and is positioned on the bearing base in chamber；
Substrate is loaded onto under the situation of chamber, and heating technique is carried out to chamber, the temperature in chamber is heated above or equal to predetermined
Temperature；Then, main sputtering is carried out to substrate using the target being arranged in chamber, to form film on substrate, wherein predetermined
Temperature is the crystallization temperature of film；Afterwards, substrate is set out into the chamber.
Some embodiments of the present invention provide a kind of aluminium nitride film build method of semiconductor equipment, comprise the following steps：It is first
First, sputtering flow is carried out, the sputtering flow comprises the following steps：Substrate is loaded into chamber, and is positioned over the carrying in chamber
On base；In the case where substrate is loaded onto the situation of chamber, heating technique is carried out to chamber, the temperature in chamber is heated above or
Equal to predetermined temperature；Then, nitrogenous gas and inert gas are passed through in chamber and utilizes the target containing aluminium being arranged in chamber
Material carries out main sputtering to substrate, and to form aluminium nitride film on substrate, wherein predetermined temperature is the crystallization temperature of aluminium nitride film
Degree；Afterwards, substrate is set out into chamber.
Some embodiments of the present invention provide a kind of electronic installation, including substrate, aluminum nitride buffer layer and gallium nitride layer.
Aluminum nitride buffer layer is located on substrate, and the film build method of the semiconductor equipment provided using some embodiments of the invention is obtained
, and the halfwidth of the X-ray diffraction analysis (002) of the aluminum nitride buffer layer is less than or equal to 100 second of arcs.Gallium nitride layer is located at
On aluminum nitride buffer layer.
In the aluminium nitride film build method of film build method, semiconductor equipment in semiconductor equipment provided by the invention, entering
The heating technique carried out in the chamber of the main sputtering of row can produce activation and/or exhaust (degas) effect before main sputtering to substrate
Fruit, and then make the increased quality that the film of formation is subsequently sputtered on substrate.Further, since substrate is entered in same chamber
Row heating technique and spatter film forming, therefore can be not necessary to still further set heating chamber, therefore equipment volume can be reduced and reduce phase
Close cost.On the other hand, the film build method of semiconductor equipment of the invention, semiconductor equipment aluminium nitride film build method also can be because
This simplifies Making programme, avoids substrate from being produced after the heating of other heating chambers during sputtering chamber is transferred to micro-
Grain falls on substrate the problem of.Further, electronic installation provided by the invention, due to being set using semiconductor provided by the invention
Standby film build method and form aluminum nitride buffer layer and gallium nitride layer, therefore equally have that Making programme is simple, low manufacture cost
The features such as, and can equally avoid particulate from falling polluted on substrate the problem of.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the film build method of the semiconductor equipment of some embodiments of the invention；
Fig. 2A is the film build method schematic diagram of the semiconductor equipment of some embodiments of the invention；
Fig. 2 B are the film build method schematic diagram of the semiconductor equipment of some embodiments of the invention；
Fig. 2 C are the film build method schematic diagram of the semiconductor equipment of some embodiments of the invention；
Fig. 3 is the schematic diagram of the electronic installation of some embodiments of the invention；
Fig. 4 is the X-ray diffraction halfwidth of the gallium nitride film of some embodiments of the invention with having during formation aluminium nitride film
Without the comparison schematic diagram for being passed through oxygen；
Fig. 5 be some embodiments of the invention aluminium nitride film X-ray diffraction halfwidth and light transmittance to formed nitrogen
Change the relation schematic diagram for the oxygen being passed through during aluminium film；And
Fig. 6 is the schematic flow sheet of the aluminium nitride film build method of the semiconductor equipment of some embodiments of the invention.
【Symbol description】
20 sputter equipments
21 chambers
21S inwalls
22 bearing bases
23 pallets
24 masking disks
25 maskings are made an inventory of goods in a warehouse
26 heat insulation loops
27 cover rings
28A bottom end covers
28B upper end covers
29 magnetrons
30 electronic installations
31 substrates
32 aluminum nitride buffer layers
33 gallium nitride layers
33N n-type doping gallium nitride layers
33P p-type doped gallium nitride layers
34 quantum well layers
100th, 200 method
110th, 121,122,130,140 step
210th, 220,230 step
SR sputters flow
T targets
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, the present invention is carried below in conjunction with accompanying drawing
The film build method of the semiconductor equipment of confession, the aluminium nitride film build method of semiconductor equipment and electronic installation illustrate.Should
Understand, the specific embodiments described herein are merely illustrative of the present invention, is not intended to limit the present invention.
The film build method of the semiconductor equipment of the present invention be using carrying out heating technique in the chamber for carrying out main sputtering, this
Heating technique is that the temperature in chamber is heated into a predetermined temperature, thus produces activation and/or exhaust effect to substrate, wherein
Above-mentioned predetermined temperature is the crystallization temperature for the film that formation is subsequently sputtered on substrate, therefore for subsequently sputtering shape on substrate
Into the increased quality of film have positive help.
In the film build method of the semiconductor equipment of the present invention, because substrate is that heating technique is carried out in same chamber
And spatter film forming, therefore can be not necessary to still further set heating chamber, and then equipment volume can be reduced and reduce relevant cost, and can
Therefore avoid substrate from producing particulate during sputtering chamber is transferred to after the heating of other heating chambers to fall in substrate
The problem of upper.
In the film build method of the semiconductor equipment of the present invention, substrate has been loaded into chamber when carrying out pre-sputtering using target
And masking disk can avoid pre-sputtering from impacting substrate between substrate and target with this.In addition, the semiconductor of the present invention
The film build method of equipment need not open chamber after the completion of technique is heated, therefore can lift the stabilization of the environment in chamber
Property, there is positive help for simplifying Making programme and lifting quality of forming film.
The present invention semiconductor equipment film build method in, substrate loading after, chamber heating technique, pre-sputtering with
And the crystallization temperature for the film to be formed is above during main sputtering, activation substrate is thus can reach in same chamber, makes substrate
It is vented (degas), lifting spatter film forming quality and lifts target service life and other effects.
The aluminium nitride film that the method for the present invention is formed has preferable quality, for being subsequently formed in aluminium nitride film
On epitaxial growth (epitaxy) quality of gallium nitride layer also lifted.Aluminium nitride film can be applied to example with gallium nitride layer
In the electronic installation of such as light-emitting diode assembly, the gallium nitride layer of quality of forming film lifting can be used to lift the electrical of electronic installation
Performance, and the aluminium nitride film with high light penetrance formed with the inventive method is also used to lift light-emitting diodes
The luminous performance of pipe device.
Fig. 1 is the schematic flow sheet of the film build method of the semiconductor equipment of some embodiments of the invention, as shown in figure 1, this
Invent some embodiments and a kind of film build method 100 of semiconductor equipment is provided, and method 100 includes multiple steps.First, carry out
Flow SR is sputtered, sputtering flow SR includes following step 110, step 121, step 122, step 130 and step 140.
Step 110 place, substrate is loaded into chamber, and on the bearing base being placed in above-mentioned chamber.At step 121, to chamber
Heating technique is carried out, its temperature is greater than or equal to predetermined temperature.At step 122, entered using the target being arranged in chamber
Row pre-sputtering.At step 130, main sputtering is carried out to substrate using target, to form film on substrate, wherein heating technique
Predetermined temperature be film crystallization temperature.At step 140, the substrate formed with film is removed into chamber.It is worth explanation
It is that in certain embodiments, also can optionally omit above-mentioned step 122, that is to say, that can optionally omit above-mentioned pre- splash
Penetrate, but be not limited thereto.
Above-mentioned method 100 is merely illustrative, and the present invention be not limited with the content of method 100, other needs it is extra
Step also can be before method 100, afterwards and/or wherein carry out, and also can be in other embodiments the step of described in method 100
In be substituted, delete or change its order.In addition, " step " one word as used in this specification is not limited to single action,
This " step " one word may include single action, operation or gimmick, or can be for by multiple actions, operation and/or gimmick institute group
Into set.
Fig. 2A to Fig. 2 C is the film build method schematic diagram of the semiconductor equipment of some embodiments of the invention.Such as Fig. 2A and figure
Shown in 1, some embodiments of the invention provide a kind of film build method 100 of semiconductor equipment, and method 100 includes multiple steps.
First, it is possible to provide sputter equipment 20.Sputter equipment 20 includes chamber 21, bearing base 22 and masking disk 24.In some implementations
Example in, sputter equipment 20 may also include storage masking disk 24 masking make an inventory of goods in a warehouse 25, heat insulation loop 26, cover ring 27, bottom end cover 28A,
Upper end cover 28B and magnetron 29, masking, which is made an inventory of goods in a warehouse, 25 to be penetrated the inwall 21S of chamber 21 and is connected with the internal environment of chamber 21,
But it is not limited thereto.In other embodiments of the invention, also can if necessary within sputter equipment 20 and/or outside set
The part of other needs.Then, carry out sputtering flow SR, sputtering flow SR includes step 110, step 121, step 122, step
130 and step 140.At step 110, substrate 31 is loaded onto in the chamber 21 of sputter equipment 20, and is placed on chamber 21
On interior bearing base 22.In certain embodiments, first one or more substrates 31 can be positioned on a pallet 23, then will put
The pallet 23 for being equipped with substrate 31 is loaded into chamber 21 and is positioned on bearing base 22 for example, by mechanical arm.In other
In embodiment, directly substrate 31 can not be also positioned on bearing base 22 by pallet 23.
Then, at step 121, heating technique is carried out to chamber 21.In certain embodiments, heating technique may include pair
Environment and substrate 31 in chamber 21 are heated, to reach activation and/or exhaust to substrate 31 and/or pallet 23
(degas) effect, therefore the temperature in chamber 21 is preferably the temperature being greater than or equal in predetermined temperature, such as chamber 21
400 degree Celsius can be higher than, preferably can be between 400 degree Celsius to Celsius between 800 degree, or more preferably can be between Celsius 500
Spend between 700 degree, but be not limited thereto, thus substrate 31 can also reach said temperature scope after being heated, and effective
Reach required activation effect.In certain embodiments, above-mentioned heating technique is heated above chamber 21 or equal to pre-
Constant temperature degree, wherein this predetermined temperature subsequently to carry out the crystallization temperature of the formed film (such as aluminium nitride film) of main sputtering,
Thus the crystallization temperature of the film (such as aluminium nitride film) formed higher than main sputtering of the temperature in substrate 31 and chamber 21 is made,
Therefore the effect that lattice rearranges can be produced to substrate 31 and the lattice arrangement shape of the film formed subsequently through main sputtering can be improved
Condition, help to lift the quality for the film that main sputtering is formed.For example, the temperature of chamber 21 can be heated to being situated between by heating technique
In 400 degree Celsius to Celsius between 800 degree, and preferably can be between 650 degree Celsius to Celsius between 800 degree, to higher than master
The crystallization temperature (crystallization temperature of aluminium nitride is about 550 degree Celsius) of the formed film (such as aluminium nitride film) of sputtering, but
It is not limited thereto.In other words, the environment in chamber 21 can constantly be heated above or sputter shape equal to main
Into film crystallization temperature, positive help thus is formed to the quality of forming film of main sputtering.
In certain embodiments, substrate 31 can be formed by sapphire substrate, carborundum (SiC) or other suitable materials
Homogenous material substrate or composite material substrate, such as silicon substrate, insulating barrier cover silicon (SOI) substrate, glass substrate or ceramics
Substrate, and pallet 23 is as made by the material of the tolerable heating technique of carborundum (SiC) or molybdenum etc., but not with this
It is limited.The heating-up temperature of above-mentioned heating technique can optic placode 31 material it is different and be adjusted, and chamber 21 and chamber
Part in 21 is preferably the metal of the material such as metal molybdenum or other tolerable heating techniques by tolerable heating technique
Or made by nonmetallic materials, above-mentioned heating technique can perform without producing qualitative change or deformation with this.Heating technique can be right
Substrate 31 reaches the effect of activation and reaches the effect of exhaust to substrate 31 and/or pallet 23, and by substrate in technique is heated
31 and/or pallet 23 be vented caused by gas also can first be excluded outside chamber 21 before main sputtering is carried out, therefore can avoid
Progress of the gases affect that substrate 31 and/or pallet 23 are discharged to main sputtering.In addition, preferably not to chamber during heating technique
Gas is passed through in 21, but is not limited thereto.
Then, as shown in Fig. 2 B and Fig. 1, at step 122, splashed in advance using the target T being arranged in chamber 21
Penetrate, and the masking disk 24 during pre-sputtering in chamber 21 is between target T and substrate 31.In certain embodiments, disk is covered
24, which can first be placed on masking when not carrying out pre-sputtering, makes an inventory of goods in a warehouse in 25, and before carrying out pre-sputtering, and masking disk 24 is from covering disk
Storehouse 25 is moved in chamber 21 and between target T and substrate 31, then carries out pre-sputtering, and the masking when pre-sputtering is carried out again
Disk 24 also is located between target T and substrate 31, avoids target T material from being formed on the substrate 31 by pre-sputtering with this.It is worth
Illustrate, in certain embodiments, at least part of above-mentioned heating technique can be carried out simultaneously with pre-sputtering, reach shortening with this
The effect of integrated artistic time, but the present invention is not limited thereto.The process time of above-mentioned heating technique can optionally be carried out
Adjustment, such as can be between 1 minute to 10 minutes, but be not limited thereto.
Afterwards, as shown in Fig. 2 C and Fig. 1, at step 130, masking disk 24 is removed and using target T to substrate 31
Main sputtering is carried out, to form film on the substrate 31.Pre-sputtering is identical with technological parameter at least part of main sputtering, makes chamber with this
Situation in room 21 tends towards stability before main sputtering is carried out, but is not limited thereto.For example, carry out leading to during pre-sputtering
Entering the gas in chamber 21 can be same with the gas phase that be passed through during main sputtering in chamber 21, and to target T when carrying out pre-sputtering
The sputtering power of loading also can optionally with carrying out main sputtering when to target T loading sputtering power it is identical, but not as
Limit.In certain embodiments, substrate 31 is to carry out above-mentioned heating in same chamber 21 and on same bearing base 22
Technique and main sputtering, but the present invention is not limited thereto.In addition, heating technique can be in being before pre-sputtering and main sputtering
Substrate 31 is heated, and the also sustainable main sputtering technology temperature heated needed for maintenance when main sputtering is carried out.One
In a little embodiments, Jie can be all maintained by heating the temperature of technique substrate 31 and chamber 21 in entirely sputtering flow SR
Between 800 degree, the quality of forming film of main sputtering is ensured with this to Celsius in 400 degree Celsius.For example, before step 110,
Before substrate 31 exactly is loaded into chamber 21, the temperature in chamber 21 can maintain for example Celsius 500 degree, and be loaded into substrate 31
After chamber 21, substrate 31 is moved into heating location using bearing base 22 and carries out heating technique, such as heating-up temperature is set
It is scheduled under 650 degree Celsius of situation and heats several minutes；Then substrate 31 is moved to relative lower section and sentenced again makes masking disk 24 removable
Enter in chamber 21 and between target T and substrate 31 and carry out pre-sputtering (situation as shown in Figure 2 B)；Completed in pre-sputtering
Afterwards, masking disk 24 is removed and moves to substrate 31 behind technique position and carry out main sputtering (situation as that shown in fig. 2 c) again；Wherein
In pre-sputtering and main sputtering, the heating component temperature reached to the heating of chamber 21 can maintain for example Celsius 650 degree, and
Temperature can be dropped to 500 degree for example Celsius after the completion of main sputtering and substrate 31 is set out into chamber 21.
In certain embodiments, the film build method 100 of semiconductor equipment may be used to form nonmetal film, metallic film or
Metal compound film.For example, when the film to be formed on the substrate 31 is aluminium nitride (AlN), target T can be containing aluminium
Target such as fine aluminium target or aluminium nitride target, and above-mentioned method 100 then can be considered the nitridation aluminium film side of semiconductor equipment
Method.
When method 100 is to form aluminium nitride film, after substrate 31 is loaded into chamber 21, using being arranged at chamber 21
Interior target containing aluminium (namely target T) carries out pre-sputtering (such as situation shown in Fig. 2 B), wherein, when pre-sputtering is carried out,
Masking disk 24 is located between target containing aluminium (namely target T) and substrate 31；And after presputtering, masking disk 24 is removed simultaneously
Main sputtering is carried out to substrate 31 using target containing aluminium (namely target T), to form aluminium nitride film on the substrate 31.In addition,
When forming aluminium nitride film, above-mentioned main sputtering may include to be passed through nitrogenous gas, oxygen-containing gas and inertia into chamber 21
Gas such as argon (argon, Ar), and the ion (such as Ar ions) as caused by inert gas is hit target containing aluminium (namely
Target T), to form aluminium nitride film on the substrate 31, and this aluminium nitride film then includes the aluminium nitride film of oxygen incorporation.Cause
This, pre-sputtering also may include to be passed through nitrogenous gas, oxygen-containing gas and inert gas such as argon in chamber 21, and make by inertia
Ionic bombardment target containing aluminium (namely target T) caused by gas, the stable situation of chamber 21 is reached with this and cleans target T's
Effect.In certain embodiments, in main sputtering and/or pre-sputtering, being passed through the range of flow of nitrogenous gas such as nitrogen can be situated between
Between 30 to 300 standard milliliters (standard cubic centimeter per minute, sccm) per minute, and preferably
Ground can be between 100sccm between 220sccm；The range of flow for being passed through inert gas such as argon gas can be between 15sccm extremely
Between 100sccm, and preferably can be between 20sccm between 70sccm；The range of flow for being passed through oxygen-containing gas such as oxygen can
Between 0.5sccm between 10sccm, and preferably can be between 0.5sccm between 5sccm, but be not limited thereto.In addition,
In main sputtering and/or pre-sputtering, it may include power bracket between 2500 watts to 4000 watts the sputtering power of target T loadings
Pulse dc power, and power bracket preferably can be between 2800 watts to 3500 watts, but be not limited thereto.In some realities
Apply in example, can stop after presputtering and before main sputtering to target T loading power power, and treat substrate 31 and move to technique
Again to target T loading powers power with build-up of luminance when position will carry out main sputtering, target T service life can be increased with this, but not
As limit.In addition, above-mentioned oxygen-containing gas can be passed through in the leading portion of main sputtering, stage casing, back segment or the whole process of the main sputtering.
Then, at step 140, the substrate 31 formed with film (aluminium nitride film as escribed above) is removed into chamber
21, so as to complete once above-mentioned sputtering flow SR.In other words, in certain embodiments, sputtering flow SR once refers to
After the pallet 23 for being placed with one or more substrates 31 is loaded onto into chamber 21, pre-sputtering is carried out and to one on pallet 23
Or multiple substrates 31 carry out main sputtering and form after film the flow that pallet 23 is removed to chamber 21.
In addition, refer to the schematic diagram of Fig. 1, Fig. 2 C and Fig. 3, Fig. 3 for the electronic installation of some embodiments of the invention.Such as figure
1st, shown in Fig. 2 C and Fig. 3, in certain embodiments, the aluminium nitride film build method 100 of semiconductor equipment can be used for forming electronics dress
Put the aluminum nitride buffer layer 32 in 30 such as gallium nitride based light emitting diode devices (GaN base LED).In certain embodiments, it is electric
Sub-device 30 may include substrate 31, aluminum nitride buffer layer 32 and gallium nitride layer 33.Aluminum nitride buffer layer 32 is located on substrate 31,
And gallium nitride layer 33 is located on aluminum nitride buffer layer 32.Aluminum nitride buffer layer 32 can be formed at substrate 31 by above-mentioned method 100
On, and gallium nitride layer 33 can be then formed on aluminum nitride buffer layer 32.Because aluminum nitride buffer layer 32 and substrate 31 are (such as blue precious
Ground mass plate) between lattice mismatch (lattice mismatch) and thermal mismatching (thermal mismatch) degree is relatively
It is small, therefore aluminum nitride buffer layer 32 can be used to improve the gallium nitride formed with epitaxial growth regime subsequently on aluminum nitride buffer layer 32
The quality of layer 33, and then lift the effect of the performance of electronic installation 30.For example, electronic installation 30 may include to light
Diode apparatus or other suitable semiconductor elec-tronic devices, and when electronic installation 30 is light-emitting diode assembly, electronics dress
Put 30 and may also include the quantum well layers 34 being formed on gallium nitride layer 33, now gallium nitride layer 33 can be mixed through processing as N-type
Miscellaneous gallium nitride layer 33N, and p-type doped gallium nitride layer 33P can be re-formed on quantum well layers 34, but be not limited thereto.
Refer to Fig. 1, Fig. 3 and following table 1.Nitrogen of the table 1 for method described above formation aluminum nitride buffer layer 32 and thereon
X-ray diffraction halfwidth (Full Width Half Maximum, the FWHM) situation and other manner for changing gallium layer 33 form aluminium nitride
The X-ray diffraction halfwidth situation comparison sheet of cushion and gallium nitride layer thereon.In table 1, embodiment 1 is method described above
100 form aluminum nitride buffer layers 32 and gallium nitride layer 33 thereon, and comparative example 1 is forms using metal organic chemical vapor deposition
Aluminum nitride buffer layer and gallium nitride layer thereon, comparative example 2 are to deposit (Reactive Plasma using reactive plasma
Deposition, RPD) form aluminum nitride buffer layer and re-form gallium nitride layer thereon.Formation nitrogen of the invention as shown in Table 1
The preferable aluminum nitride buffer layer 32 of quality of forming film and gallium nitride layer 33 thereon can be obtained by changing the method for aluminium.
Table 1
Refer to Fig. 1, Fig. 2 C, Fig. 3, Fig. 4 and following table 2.Fig. 4 is the gallium nitride film of some embodiments of the invention
The comparison schematic diagram for being passed through oxygen is whether there is when X-ray diffraction halfwidth is with forming aluminium nitride film；Table 2 is that electricity is formed in a manner of sputtering
The electrical influence for being passed through oxygen for electronic installation 30 is whether there is during aluminum nitride buffer layer 32 in sub-device 30.As shown in Figure 1, Figure 2 C,
Shown in Fig. 3, Fig. 4 and table 2, when forming the main sputtering of aluminum nitride buffer layer 32 it is passed through oxygen and can obviously improve and subsequently nitrogenizing
The quality of forming film (its X-ray diffraction halfwidth substantially diminishes) of the gallium nitride layer 33 formed on aluminium cushion 32, and in electronic installation
It should also be appreciated that forming the master of aluminum nitride buffer layer 32 from the point of view of in the various electrical performances of 30 (being, for example, light-emitting diode assembly)
Oxygen is passed through during sputtering can improve many electrical performances of electronic installation 30.
Table 2
Refer to Fig. 1, Fig. 2 C, Fig. 3 and Fig. 5.Fig. 5 is the X-ray diffraction half of the aluminium nitride film of some embodiments of the invention
The relation schematic diagram for the oxygen being passed through when high wide and light transmittance is to forming aluminium nitride film.As shown in Figure 1, Figure 2 C, Fig. 3 and
Shown in Fig. 5, it is passed through in main sputtering in chamber 21 under the situation that oxygen flow is about 1sccm, increase is passed through the time of oxygen
The light transmittance of formed aluminium nitride film can be caused to be obviously improved, and this higher light transmittance helps to be applied to hair
Luminous performance during optical diode device, the X-ray diffraction of aluminium nitride film can also be caused by being passed through excessive oxygen but then
Halfwidth becomes big.Therefore, it need to control and time of oxygen and flow are passed through during main sputtering to avoid to aluminium nitride film into film quality
Amount has a negative impact.Therefore, in some embodiments of the invention, nitrogen is formed by forming aluminum oxide film film method 100
When changing aluminium cushion 32, the halfwidth of the X-ray diffraction analysis (002) of aluminium nitride film (namely aluminum nitride buffer layer 32)
(FWHM) 100 second of arcs (arcsec), the X-ray diffraction point of aluminium nitride film (namely aluminum nitride buffer layer 32) be may be less than or equal to
The halfwidth (FWHM) of analysis (102) may be less than or equal to 230 second of arcs (arcsec), the X-ray diffraction analysis (002) of gallium nitride layer 33
Halfwidth (FWHM) may be less than or equal to 110 second of arcs, the halfwidth (FWHM) of the X-ray diffraction analysis (102) of gallium nitride layer 33
160 second of arcs are may be less than or equal to, but are not limited thereto.
Illustrate below for different embodiments of the invention, and to simplify explanation, illustrate below mainly for each
Embodiment difference is described in detail, and no longer something in common is repeated.It is in addition, identical in various embodiments of the present invention
Component be to be indicated with identical label, in favor of being checked one against another between each embodiment.
Refer to Fig. 6, Fig. 1 and Fig. 2A.Fig. 6 is the nitridation aluminium film side of the semiconductor equipment of some embodiments of the invention
The schematic flow sheet of method.As shown in Fig. 6, Fig. 1 and Fig. 2A, some embodiments of the invention provide a kind of film forming of semiconductor equipment
Method 200, and method 200 includes multiple steps.At step 210, processing is coated, coating process is included in chamber 21
Inert gas such as argon gas is passed through, the then loading power power on target containing aluminium (namely target T), and make inert gas solution
From into ion (such as Ar ions), and with ionic bombardment target T caused by this inert gas, so coating process may include to target
Material T is cleaned and/or is made the film on the parts such as cover ring 27 and upper end cover 28B be not susceptible to rupture.In some embodiments
In, only it is passed through argon gas in coating process and is not passed through other gases, and the time of coating process can be between 1 minute to 20 points
Clock, but be not limited thereto.In certain embodiments, carry out can also be at being higher than in chamber 21 during above-mentioned coating process taking the photograph
400 degree of family name, power supply of relative low power (such as 1000 watts) can be applied on target T and/or be utilized relatively short with this
Coating processing time can reach the effect above, and can therefore extend target T service life.What deserves to be explained is existing
Have in film build method, because the temperature in chamber is less than 350 degree Celsius, therefore the crystalline particle of target is smaller and can increase particulate
(particle) the defects of related caused probability, and chamber be in be less than 350 degree Celsius in the state of, cover ring and upper end
Film on the parts such as lid also easily occurs rupture (crack) and causes particle defects to increase.It is existing in order to solve particle issues
Film build method can be coated processing after continuously repeating progress and repeatedly sputtering flow, and due to being in chamber less than Celsius
In the environment of 350 degree, existing coating process must use high power and continue dozens of minutes, and this not only adds during integrated artistic
Between, it can more cause the service life (l ife time) of target to shorten.In comparison, in the method for the present embodiment, due to chamber
Room 21, which is in, to be greater than or equal in the environment of 400 degree Celsius, therefore target T crystalline particle can be made to become big and reduce particulate correlation
Defect produces, and the film on the part such as cover ring 27 and upper end cover 28B is also less likely to occur rupture (crack) in addition, and this
Contribute to improve particulate correlation the defects of problem.That is, it is in the environment greater than or equal to 400 degree Celsius in chamber 21
Under, the method 200 of the present embodiment, which can not only be reduced, is coated number of processing and frequency, shortens the integrated artistic time, and
And the coating process of the present embodiment only needs to carry out using low-power, also there is positive help for target T service life.
Then, at step 220, nitrogen treatment is carried out to chamber 21.The gas being passed through during nitrogen treatment in chamber 21
Can with that the gas phase of chamber 21 is passed through during main sputtering is same, that is to say, that nitrogen treatment can be passed through oxygen-containing gas in chamber 21, contain
Nitrogen and inert gas are carried out, and thus stablize the gas-condition in chamber 21 to carry out follow-up pre-sputtering and main sputtering,
But it is not limited thereto.
After above-mentioned coating process and nitrogen treatment, at step 230, progress repeatedly sputtering flow is continuously repeated
SR, and the sputtering flow SR being carried out continuously may make up batch sputtering flow.Sputtering flow conducted in batch sputtering flow
SR times number can be between 15 to 30 times, but are not limited thereto.After step 230, that is, after completion batch sputtering flow
Above-mentioned step 220 and step 230 can be carried out again.In other words, can be carried out before or after batch sputters flow above-mentioned
Coating process and nitrogen treatment, the removable target T surfaces of coating process after repeatedly sputtering flow SR because produce
Raw product (such as aluminium nitride) and the effect for reaching cleaning target T, and the chamber after repeatedly sputtering flow SR can be made
The side wall impedance of room 21 is recovered, and nitrogen treatment can be used to stablize the situation in the rear chamber 21 of coated processing.
In summary, the film build method of semiconductor equipment of the invention is that substrate is added in the chamber sputtered
Thermal process, heating technique is heated above the temperature in chamber or the crystallization temperature equal to the film to be formed, and by adding
Thermal process can save preheating chamber and pre-clean chamber, therefore can substantially reduce the cost of equipment in itself.In addition, heating technique
Also quality of forming film can be improved, such as when for forming aluminium nitride film, can not only improve the quality of forming film of aluminium nitride film, it is right
Also lifted in being subsequently formed the epitaxial growth quality in the gallium nitride layer on aluminium nitride film.In addition, loaded in substrate
Using disk progress pre-sputtering is covered under to the situation of chamber, in addition to it can reach the situation of stable follow-up main sputtering, can also shorten
Integrated artistic time and the effect for reaching lifting production capacity, and respectively sputter film thickness repeatability that flow is formed also can be because splashing in advance
Penetrate, coating process and/or nitrogen treatment and lifted.On the other hand, the high quality nitridation formed with the inventive method
Aluminium film be can be applied in electronic installation such as light-emitting diode assembly, and the nitrogen of quality of forming film lifting is reached because of aluminium nitride film
Change the electrical performance that gallium layer can be used to be lifted electronic installation, and what is formed with the inventive method has high light penetrance
Aluminium nitride film is also used to be lifted the luminous performance of light-emitting diode assembly.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (26)
- A kind of 1. film build method of semiconductor equipment, it is characterised in that including：Sputtering flow is carried out, the sputtering flow includes：Substrate is loaded into chamber, and on the bearing base being positioned in the chamber；In the case where the substrate is loaded onto the situation of the chamber, heating technique is carried out to the chamber, by the temperature in the chamber Degree is heated above or equal to predetermined temperature；Main sputtering is carried out to the substrate using the target being arranged in the chamber, to form film on the substrate, its In, the predetermined temperature is the crystallization temperature of the film；AndThe substrate is set out into the chamber.
- 2. the method as described in claim 1, it is characterised in that the predetermined temperature between 400 degree Celsius to 800 degree Celsius it Between.
- 3. method as claimed in claim 2, it is characterised in that the predetermined temperature between 500 degree Celsius to 700 degree Celsius it Between.
- 4. the method as described in claim 1, it is characterised in that the process time of the heating technique was between 1 minute to 10 points Clock.
- 5. the method as described in claim 1, it is characterised in that when carrying out the heating technique, the masking in the chamber Disk is between the target and the substrate.
- 6. the method as described in claim 1, it is characterised in that the sputtering flow also includes：Before the main sputtering, pre-sputtering is carried out using the target, wherein, when the pre-sputtering is carried out in the chamber Masking disk between the target and the substrate.
- 7. method as claimed in claim 6, it is characterised in that at least part of heating technique and the pre-sputtering are simultaneously Carry out.
- 8. method as claimed in claim 6, it is characterised in that when carrying out the pre-sputtering, the gas that is passed through in the chamber The gas phase that is passed through in the chamber is same during with carrying out the main sputtering.
- 9. the method as described in claim 1, it is characterised in that also include：The progress repeatedly sputtering flow is continuously repeated, wherein, the sputtering flow being carried out continuously forms batch sputtering stream Journey；AndBefore or after the batch sputters flow, processing is coated, wherein, the coating process includes：Inert gas is passed through in the chamber；AndTarget described in the ionic bombardment formed as the inert gas.
- 10. the method as described in claim 1, it is characterised in that also include：The progress repeatedly sputtering flow is continuously repeated, the sputtering flow being carried out continuously forms batch sputtering flow；With AndBefore or after the batch sputters flow, nitrogen treatment is carried out.
- 11. a kind of aluminium nitride film build method of semiconductor equipment, including：Sputtering flow is carried out, the sputtering flow includes：Substrate is loaded into chamber, and on the bearing base being positioned in the chamber；In the case where the substrate is loaded onto the situation of the chamber, heating technique is carried out to the chamber, by the temperature in the chamber Degree is heated above or equal to predetermined temperature；Nitrogenous gas and inert gas are passed through in the chamber and using the target containing aluminium being arranged in the chamber to institute State substrate and carry out main sputtering, to form aluminium nitride film on the substrate, wherein, the predetermined temperature is the aluminum nitride thin The crystallization temperature of film；AndThe substrate is set out into the chamber.
- 12. method as claimed in claim 11, it is characterised in that the main sputtering includes：Oxygen-containing gas is passed through in the chamber；AndThe aluminium nitride film is formed on the substrate using the target containing aluminium, wherein, the aluminium nitride film includes oxygen The aluminium nitride film of incorporation.
- 13. method as claimed in claim 12, it is characterised in that the oxygen-containing gas is passed through flow between 0.5sccm extremely Between 5sccm.
- 14. method as claimed in claim 12, it is characterised in that the oxygen-containing gas be the main sputtering leading portion, in Section, back segment or the whole process of the main sputtering are passed through.
- 15. method as claimed in claim 11, it is characterised in that the predetermined temperature is between 400 degree Celsius to 800 degree Celsius Between.
- 16. method as claimed in claim 15, it is characterised in that the predetermined temperature is between 500 degree Celsius to 700 degree Celsius Between.
- 17. method as claimed in claim 11, it is characterised in that the process time of the heating technique was between 1 minute to 10 Minute.
- 18. method as claimed in claim 11, it is characterised in that the sputtering flow also includes：Before the main sputtering, pre-sputtering is carried out using the target containing aluminium, wherein, it is described when the pre-sputtering is carried out Masking disk in chamber is positioned at described between target containing aluminium and the substrate.
- 19. method as claimed in claim 18, it is characterised in that at least part of heating technique is and the pre-sputtering Carry out simultaneously.
- 20. method as claimed in claim 18, it is characterised in that when carrying out the pre-sputtering, the gas that is passed through in the chamber Body and the gas phase be passed through during the main sputtering in the chamber are same.
- 21. method as claimed in claim 11, it is characterised in that also include：The progress repeatedly sputtering flow is continuously repeated, wherein, the sputtering flow being carried out continuously forms batch sputtering stream Journey；AndBefore or after the batch sputters flow, processing is coated, wherein, the coating process includes：Inert gas is passed through in the chamber；AndTarget containing aluminium described in the ionic bombardment as caused by the inert gas.
- 22. method as claimed in claim 11, it is characterised in that also include：The progress repeatedly sputtering flow is continuously repeated, wherein, the sputtering flow being carried out continuously forms batch sputtering stream Journey；AndBefore or after the batch sputters flow, nitrogen treatment is carried out.
- 23. method as claimed in claim 22, it is characterised in that the nitrogen treatment be passed through in the chamber it is oxygenous Body, nitrogenous gas and inert gas are carried out.
- 24. method as claimed in claim 11, it is characterised in that the half of the X-ray diffraction analysis (002) of the aluminium nitride film Height is wide to be less than or equal to 100 second of arcs.
- A kind of 25. electronic installation, it is characterised in that including：Substrate；Aluminum nitride buffer layer, it is located at the semiconductor equipment on the substrate and any one of using claim 1-10 Film build method obtain, and the halfwidth of the X-ray diffraction analysis (002) of the aluminum nitride buffer layer is less than or equal to 100 second of arcs； AndGallium nitride layer, it is located on the aluminum nitride buffer layer.
- 26. such as the electronic installation of claim 25, it is characterised in that the half of the X-ray diffraction analysis (002) of the gallium nitride layer is high It is wide to be less than or equal to 110 second of arcs.
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| CN201610407581.XA CN107492490B (en) | 2016-06-12 | 2016-06-12 | Film forming method for semiconductor device, film forming method for aluminum nitride, and electronic apparatus |
| TW105124056A TWI626327B (en) | 2016-06-12 | 2016-07-29 | Film formation method for semiconductor device, aluminum nitride film formation method, and electronic device |
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| CN201610407581.XA CN107492490B (en) | 2016-06-12 | 2016-06-12 | Film forming method for semiconductor device, film forming method for aluminum nitride, and electronic apparatus |
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| CN109326506A (en) * | 2018-08-28 | 2019-02-12 | 晶能光电（江西）有限公司 | AlN film growth method |
| CN109326696A (en) * | 2018-09-19 | 2019-02-12 | 华灿光电(苏州）有限公司 | A kind of preparation method of the epitaxial wafer of light emitting diode |
| CN110718610A (en) * | 2018-07-12 | 2020-01-21 | 江西兆驰半导体有限公司 | Preparation method of ultraviolet light-emitting diode epitaxial structure layer |
| CN110729385A (en) * | 2018-07-16 | 2020-01-24 | 江西兆驰半导体有限公司 | Oxygen-containing composite buffer layer structure and method for improving crystal quality of gallium nitride epitaxial layer |
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| TW201742936A (en) | 2017-12-16 |
| TWI626327B (en) | 2018-06-11 |
| CN107492490B (en) | 2020-03-31 |
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