CN103834931B - Equipment for carrying out chemical vapor deposition process - Google Patents
Equipment for carrying out chemical vapor deposition process Download PDFInfo
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- CN103834931B CN103834931B CN201410093122.XA CN201410093122A CN103834931B CN 103834931 B CN103834931 B CN 103834931B CN 201410093122 A CN201410093122 A CN 201410093122A CN 103834931 B CN103834931 B CN 103834931B
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Abstract
The invention relates to equipment for carrying out a chemical vapor deposition process. A most important reactor main body 2 comprises a heating cavity 51, a sealing cavity 52 and a reaction cavity 53, wherein the heating cavity 51 comprises a heater 13, a hollow shaft 7 and a ventilating flange 15; the ventilating flange 15 is fixed on a reactor bottom plate 23; the sealing cavity 52 is defined by the reactor bottom plate 23, a heating cavity side wall 14, a sealing cavity wall 521 and a sealing cavity top plate 522; the reaction cavity 53 is enclosed by the reactor bottom plate 23, the sealing cavity side wall 521, a reaction cavity side wall 531, an airflow channel upper cover 10, the sealing cavity top plate 522, a heating cavity top cover 11 and an outward folded flat plate 7-4 at the upper part of the hollow shaft 7. The equipment is characterized in that the heating cavity top cover 11 can rotate under drive of the hollow shaft 7, and the heating cavity side wall 14 can rotate synchronously with the heating cavity top cover 11.
Description
Technical field
The invention belongs to semiconductor device fabrication field, more particularly it relates to chemical gaseous phase deposition field.
Background technology
Recently, gallium nitride semiconductor film is widely used in fields such as light emitting diode, high frequency power component, Ultraviolet sensors, and its demand also steeply rises.Gallium nitride semiconductor film is substantially all use vapor deposition apparatus and grows.MOCVD (MOCVD) process refers at high temperature make the unstrpped gas containing specific composition element decompose or reaction, the film of this component or layer on thus depositing on substrate, depending on wherein this specific composition element is according to the chemical composition of semiconductor device to be obtained.
Such as, when to Grown gallium nitride semiconductor layers, nitrogen source gas [such as ammonia can be passed through, its pyrolytic becomes nitrogen and hydrogen], gallium source gas [such as trimethyl gallium (TMGa) or triethyl-gallium (TEGa)], two kinds of unstrpped gases are decomposed at high temperature and react, and can grow GaN semiconductive thin film on a silicon substrate.When needs adulterate other element in gallium nitride, it is also possible to be passed through the raw materials such as trimethyl aluminium, trimethyl indium, triethylindium, and as the hydrogen of carrier gas, nitrogen etc..Substrate mainly uses sapphire, carborundum, gallium nitride etc..The growth temperature of the representative materials-gallium nitride of gallium nitride semiconductor film is about 1000 DEG C.When carrying out chemical gaseous phase deposition on the heater top cover placed the substrate in chemical vapor depsotition equipment, heat the heater being positioned at below heater top cover.The growth temperature of gallium nitride is when 1000 DEG C, and the heater temperature of heater can rise to the high temperature of about 1500 DEG C.
In order to improve the uniformity of growing film, MOCVD device supports the heater top cover of substrate or block substrate and is generally designed to rotary-type structure.But, the heater adding hot heater top cover is designed to rotational structure is impossible.It is to say, space to be produced between heater top cover and the heater fixed of rotational structure.Unstrpped gas from this void diffusion to heater, thus and the heater of heater produce chemical reaction, therefore this heater can be corroded, and reduces the service life of heater, will lose efficacy, it has to again change heater after using a period of time.This causes very burden, because frequent shutdowns of having to is to change this heater to the useful industrially of this reactor.The particularly MOCVD equipment of growing nitride quasiconductor, the temperature at heater heating position rises to about 1500 DEG C, and temperature is the highest, so heating material is easy and ammonia, hydrogen produce chemical reaction.
A kind of method delaying this heater to corrode is to plate layer protective layer on this heater surfaces; such as plate boron nitride, carborundum or ramet protective layer by high temperature thermal decomposition technology, to prevent heater material from being corroded by the catabolite of each source gas.But, plate complex process and the costliness of this protective layer, cause reactor cost abruptly increase.In addition; protecting film the most at high temperature use can occur the distillation of local material, causes generation aperture in protecting film, therefore unstrpped gas may can be diffused into heater main structure material from grain circle of these apertures and protecting film; it is made to corrode, it is therefore desirable to periodic replacement.Therefore, plate protective layer and be only capable of extending the life-span of heater, but permanent protection effect can not be played.In order to stop unstrpped gas to be diffused into heater, utilize container its appropriateness to be wrapped up, problem can be solved.But the reasons such as machining accuracy, assembly precision, thermal expansion have the biggest difficulty.
In order to solve above-mentioned technical barrier; the present inventor has invented the reactor for implementing chemical vapor deposition processes of a kind of special construction; it can fundamentally avoid heater material to touch the catabolite of each source gas; therefore; heater material will not corrode; and then need not go again plating, significantly extend the life-span of heater, and significantly reduce the manufacturing cost of heater.
Summary of the invention
The present invention relates to a kind of reactor for implementing chemical vapor deposition processes, comprising: gas inlet pipe 1, reactor body 2, exhaustor 3, aerofluxus collection room 4 and vacuum orifice 5, wherein exhaustor 3 is positioned at the outside of reactor body 2 and one end connects with aerofluxus collection room 4, and vacuum orifice 5 is arranged on aerofluxus collection room 4；Wherein reactor body 2 includes: heats chamber 51, surrounds the annular seal space 52 in this heating chamber and surround the reaction chamber 53 of this annular seal space 52；Wherein having heater 13 in heating chamber 51 and run through this heating chamber and arranges and pass the quill shaft 7 reactor body 2 outside, heating chamber 51 is arranged on the flange 15 of ventilating above this reactor base plate by heating chamber sidewall 14, reactor base plate 23 and being close to, is heated the flat board 7-4 that turns up on chamber top cover 11 and quill shaft 7 top be enough to maintain the bubble-tight mode in this heating chamber 51 to be surrounded；Wherein said ventilation flange 15 is fixed on described reactor base plate 23；Wherein annular seal space 52 is surrounded by reactor base plate 23, heating chamber sidewall 14, annular seal space sidewall 521 and annular seal space top board 522；Wherein reaction chamber 53 is surrounded by the flat board 7-4 that turns up on reactor base plate 23, annular seal space sidewall 521, reaction chamber sidewall 531, gas channel upper cover 10, annular seal space top board 522, heating chamber top cover 11 and quill shaft 7 top, wherein gas inlet pipe 1 connects through described gas channel upper cover 10 with this reaction chamber 53, the upper surface of heating chamber top cover 11 has some circular grooves 12, and this circular groove is for laying the substrate of chemical vapor deposition process to be carried out；Wherein the other end of exhaustor 3 connects with described reaction chamber 53；It is characterized in that, described heating chamber top cover 11 can rotate under the drive of described quill shaft 7, and described heating chamber sidewall 14 can be with described heating chamber top cover 11 synchronous rotary.
Accompanying drawing is sketched
Fig. 1 is the external perspective view of the reactor for implementing chemical vapor deposition processes of the present invention.
Fig. 2 is the cross sectional view after being cut open along the axis of quill shaft by the reactor being used for implementing chemical vapor deposition processes of the present invention.
Fig. 3 is the three-dimensional view after being cut open along the axis of quill shaft by the reactor being used for implementing chemical vapor deposition processes of the present invention.
Fig. 4 with Fig. 3 is essentially identical, simply adds gas channel upper cover.
Fig. 5 is the schematic diagram of ventilation flange.
Fig. 6 is the Limit Bearing distribution schematic diagram of heating intracavity.
Reference numerals list in each figure:
1. gas inlet pipe；2. reactor body；3. exhaustor；4. aerofluxus collection room；5. vacuum orifice；6-1. the first magnet fluid sealing device；6-2. the second magnet fluid sealing device；7. quill shaft, wherein: 7-1. epimere quill shaft, 7-2. hypomere quill shaft；Axle in 7-3.；7-4. turns up flat board；8. travelling gear；9. enclosing cover；10. gas channel upper cover；11. heater top covers；12. circular grooves；13. heaters；14. heating chamber sidewalls, wherein: 141. soles；142. first vertical walls；143. extend out circular table；144. second vertical walls；15. ventilation flanges, wherein: 151. seal grooves；152. air channel；153. passage；154. bolt hole；16. central gear；17. substrate pallets；18. inert gas inleting pipes；19. valves；20.U shape communicating pipe is at the opening of heating intracavity；21.U shape communicating pipe；22. Limit Bearings；23. reactor base plates, wherein: 231. base plate passages；24. disks；51. heating chambeies；52. annular seal spaces；53. reaction chambers；54. exocoels；521. annular seal space sidewalls；522. annular seal space top boards；531. reaction chamber sidewalls；541. reactor outer walls.
Detailed Description Of The Invention
Now, with reference to each accompanying drawing, the present invention is used for implementing the reactor of chemical vapor deposition processes to be described in detail as follows.
Seeing Fig. 1, it is the external perspective view of reactor of the present invention.This reactor includes gas inlet pipe 1, reactor body 2, exhaustor 3, aerofluxus collection room 4 and vacuum orifice 5 on the whole.Wherein also having the internal structure of complexity in reactor body 2, this will be explained below.Exhaustor 3 is positioned at the outside of reactor body 2 and one end connects with aerofluxus collection room 4, its other end and described vacuum orifice 5 are arranged on aerofluxus collection room 4, this vacuum orifice 5 can be connected to vacuum pump (not shown in figure 1), so that described reactor body 2 is carried out evacuation process.Fig. 1 also show quill shaft 7, be positioned on quill shaft 7 and be positioned at the travelling gear 8 outside reactor body 2 and inert gas inleting pipe 18, be hereinafter described.The reactor of the present invention operationally uses the mode making quill shaft 7 be vertically oriented to place.
See Fig. 2 and Fig. 3, they be respectively the cross sectional view after being cut open along the axis of quill shaft 7 by the reactor shown in Fig. 1 and cut open after axonometric chart.The most visible, reactor body 2 mainly includes heating chamber 51, annular seal space 52 and reaction chamber 53 and optional exocoel 54, and constitutes the structure member etc. in each chamber.Below in conjunction with Fig. 2 and Fig. 3, to each chamber and component parts thereof, details are as follows:
Heating chamber 51, it is positioned at the penetralia of described reactor body 2, has heater 13 and run through this heating chamber and arrange and pass the quill shaft 7 outside reactor body 2 in this heating chamber 51；This heating chamber 51 is by heating chamber sidewall 14, reactor base plate 23 and is close to be arranged on the flat board 7-4 that turns up on ventilation flange 15, heating chamber top cover 11 and quill shaft 7 top above this reactor base plate be enough to maintain the bubble-tight mode in this heating chamber 51 to be surrounded；Wherein said ventilation flange 15 is fixed on described reactor base plate 23.The effect in this heating chamber is to accommodate described heater 13 and opened, to protect this heater not corroded with outside atmosphere isolation by this heater on Design of Mechanical Structure.Additionally, also have the auxiliary elements such as the wire for be energized and binding post to heater in heating chamber 51, these auxiliary elements can be easy to set up as the case may be by those skilled in the art, thus in order to drawing clearly for the sake of, not shown in FIG. 2.Hereinafter will illustrate, described heating chamber sidewall 14 can rotate, and in order to make, heating chamber sidewall 14 is the most overall when rotating to be rocked, and provides at least three Limit Bearing 22, as shown in Figure 6 inside heating chamber 51.The outer rim of each in this at least three Limit Bearing 22 is smooth tangent with the inner side of described heating chamber sidewall 14." smooth " means do not have any friction between Limit Bearing 22 and heating chamber sidewall 14.This at least three Limit Bearing is fixed.In a preferred embodiment, this heating chamber sidewall 14 can also be divided into two sections, and two sections are can connect in the way of transmitting moment of torsion.Its epimere is because near heater, the more preferable ceramic material of temperature high-fire resistance manufactures, and hypomere is because being relatively distant from heater and temperature is relatively low, therefore relatively cheap graphite can be used to manufacture.
Annular seal space 52, it surrounds described heating chamber 51；With reaction chamber 53, it surrounds this described annular seal space 52；Wherein annular seal space 52 is surrounded by reactor base plate 23, heating chamber sidewall 14, annular seal space sidewall 521 and annular seal space top board 522；Wherein reaction chamber 53 is surrounded by the flat board 7-4 that turns up on reactor base plate 23, annular seal space sidewall 521, reaction chamber sidewall 531, gas channel upper cover 10, annular seal space top board 522, heating chamber top cover 11 and quill shaft 7 top, and wherein gas inlet pipe 1 connects through described gas channel upper cover 10 with this reaction chamber 53.Wherein the upper surface of heating chamber top cover 11 has some circular grooves 12, and this circular groove is for laying the substrate of chemical vapor deposition process to be carried out；Wherein the other end of exhaustor 3 connects with described reaction chamber 53；Wherein said heating chamber top cover 11 can rotate under the drive of described quill shaft 7, and described heating chamber sidewall 14 can be with described heating chamber top cover 11 synchronous rotary；Being placed with substrate pallet 17 in circular groove 12 on described heater top cover 11, this substrate pallet 17 is for supporting the substrate waiting to be carried out chemical vapor deposition process, and the outer rim of this substrate pallet 17 has gear, and this gear is meshed with described central gear 16.During work, by gas inlet pipe 1, the raw material source of the gas required for chemical vapor deposition processes is passed in the reaction chamber of reactor body 2.When this raw material source of the gas flows through above heater top cover, being heated and decomposed chemical vapor deposition processes, unreacted raw material source of the gas then discharges reaction chamber through exhaustor 3, after aerofluxus collection room 4 is collected, discharges from vacuum orifice 5.
Described heater sidewall 14 can be that the present invention improves greatly relative to the one of conventional art with described heating chamber top cover 11 synchronous rotary.If heater sidewall 14 maintains static, and the most described heating chamber top cover 11 rotates, on the two contact surface, friction and wear will certainly occur, cause the air-tightness at the two contact surface worse and worse, then unstrpped gas or its thermal decomposition product contact with heater material in leaking into heating chamber 51, cause corrosion and the inefficacy of heater material.The two is designed to synchronous rotary, then can eliminate the friction and wear on the two contact surface, make to remain at contact surface good air-tightness, prevent from unstrpped gas or its thermal decomposition product from can leak in heating chamber 51 to contact with heater material, also it is prevented that the corrosion of heater material and inefficacy.Had the design of such uniqueness, then heater material can remove plating protective layer, in addition; the wire that is attached thereto, binding post etc. all can use common material; such as copper, aluminum, nickel etc., without being resistant material, this significantly reduces manufacturing cost and replacement cost.Therefore, in the present invention, heater material is uncoated protective layer.By those skilled in the art according to guaranteeing that bubble-tight principle is designed, and various design can be there is in the concrete geometry of this heater sidewall 14.Such as, a kind of design is, described heater sidewall 14 includes the vertical wall 142 of sole 141, first, extends out circular table 143 and the second vertical wall 144, continue to upwardly extend a segment distance after wherein being extended out a segment distance by the top of the first vertical wall 142, extending out circular table 143 and the described second vertical wall 144 described in being formed, this extends out circular table for supporting described heater top cover 11.Obviously can also there is other design, as long as this heating chamber sidewall and described heating chamber top cover 11 synchronous rotary can be made and can keep air-tightness.
In the preferred version of the present invention, it is also possible to provide the exocoel 54 surrounding described reaction chamber 53, to provide protection to each chamber within exocoel 54.This exocoel 54 is surrounded by reactor base plate 23, reactor outer wall 541, reaction chamber sidewall 531, gas channel upper cover 10 and enclosing cover 9, between this exocoel 54 and described reaction chamber 53 by between described reaction chamber sidewall 531 and reactor base plate 23 gap or and gas channel upper cover 10 between gap and keep gas communication between this reaction chamber 53.
In reactor body 2, reactor base plate 23 is that each chamber is public, is used for providing sealed bottom.Being wherein gas communication between annular seal space 52, reaction chamber 53, this can be realized by the gap between the gap between annular seal space sidewall 521 and reactor base plate 23 or annular seal space top board 522 and heating chamber sidewall 14.These gaps can deliberately process, it is also possible to is the gap naturally left when assembling because of each part.
Each chamber in addition to heating chamber is all gas communication, and this feature causes when carrying out evacuation by described exhaustor 3, and this vacuum action can act on each chamber in annular seal space, reaction chamber and exocoel throughout property.
Described quill shaft 7 passes downwards the outside of reactor body 2, and described quill shaft 7 has travelling gear 8 on outer portion part.Pass at described quill shaft 7 and first magnet fluid sealing device 6-1 is provided at described reactor base plate 23, to guarantee still to be able to when this quill shaft rotates maintain the air-tightness between the perforation on this quill shaft and reactor base plate.Magnet fluid sealing device is a kind of conventional sealer in this area, is mainly used in the rotary shaft through hermetic container is carried out movable sealing.Described travelling gear 8 can rotate under external force drives, and then drives quill shaft 7 to rotate.Turning up between flat board 7-4 and described heater top cover 11 by being attached by the way of transmitting moment of torsion of this quill shaft 7 top, such as, be attached by pin or key, so that the rotation of quill shaft 7 can drive heater top cover 11 to rotate.In preferred embodiments, described quill shaft 7 can be divided at least two sections, and the most described quill shaft 7 can include epimere quill shaft 7-1 and hypomere quill shaft 7-2, therebetween with screw thread or bonded, can transmit moment of torsion.Being divided into two sections and have the benefit that epimere is in heating intracavity portion, near heater, environment temperature is high, can use the material that thermostability is strong；And hypomere is in outside heating middle and lower part, chamber or even heating chamber, environment temperature is low, therefore can use the thermostability material more slightly worse than epimere, to save equipment cost.Additionally, after epimere the most once damages, can be easily removed and get off to be replaced, hypomere then need not be changed.
Having interior axle 7-3 inside the hollow of described quill shaft 7, this interior axle is arranged with this quill shaft 7 coaxial line, and this interior axle rotates for driving the central gear 16 being positioned at this shaft end.This interior axle can be solid, it is also possible to for hollow.This interior axle top is fixed with a central gear 16.This interior axle also passes the bottom of described quill shaft 7 and is fixed on disk 24, and this interior axle 7-3 can rotate and maybe can not rotate.When interior axle 7-3 maintains static, the central gear 16 at its top also maintains static.Then when heater top cover 11 is driven rotation by quill shaft 7, the gear of substrate pallet 17 outer rim is because being driven generation " rotation " with engaging of central gear 16, corresponding, by heater top cover 11 around the axis of quill shaft 7 rotation be referred to as " revolution ", it is clear that the now rotation of substrate pallet 17 is by opposite direction with the revolution of heater top cover.If interior axle 7-3 rotates, the then central gear 16 also concomitant rotation at its top, as long as the rotation direction of this central gear 16 is different from the rotation direction of heater top cover 11 and rotational angular velocity with any one in both velocities of rotation, the most described substrate pallet 17 also can be driven generation " rotation " because of the gear of its outer rim with engaging of central gear 16.In preferred embodiments, interior axle 7-3 maintains static, and only drives heater top cover 11 to revolve round the sun by quill shaft 7 and rely on the described gear of substrate pallet 17 outer rim and the engagement of central gear 16 and make substrate pallet 17 be driven generation " rotation ".Occur revolution and rotation to be advantageous in that and improve being heated evenly property and the uniformity of vapour deposition effect.
In preferred embodiments, being provided with the second magnet fluid sealing device 6-2 in place of described interior axle 7-3 passes the bottom of described quill shaft 7, to guarantee when quill shaft 7 rotates or time quill shaft 7 and interior axle 7-3 rotate, this passes the air-tightness of part.
In a preferred embodiment of the invention, the outside of described reactor body 2 being provided with U-shaped communicating pipe 21, its one end open connects with described heating chamber 51, and its other end opening connects with described reaction chamber 53, and this U-shaped communicating pipe 21 is provided with valve 19.The purpose of this U-shaped communicating pipe is set when being, before chemical gaseous phase deposition starts, reaction chamber 53 is carried out evacuation pretreatment, maintains the pressure balance between heating chamber 51 and reaction chamber 53.Before chemical gaseous phase deposition starts, need reaction chamber 53 to carry out evacuation to remove gas therein, in the case of not this U-shaped communicating pipe 21, when reaction chamber 53 is carried out evacuation, owing to heating chamber 51 is evacuated the most simultaneously, then heater top cover 11 jack-up even can be collided described gas channel upper cover 10 and cause damage by the pressure differential between two chambeies.By arranging this U-shaped communicating pipe 21, and open valve 19 when evacuation, then heating chamber 51 can be made simultaneously to be evacuated with reaction chamber 53, make not have therebetween pressure differential, therefore heater top cover 11 will not float.When evacuation reaches target vacuum, close vacuum pump, and close this valve, then in reaction chamber, raw material source of the gas it is passed through by gas inlet pipe 11, until reaching the pressure required for chemical vapour deposition reaction, being then turned on heater and heating, after being heated to reaction temperature, start reaction.
Another of the present invention is unique in that the design of described ventilation flange 15.As shown in Figures 2 and 3, described ventilation flange 15 is fixed on described reactor base plate 23, and this is fixed by conventional bolt and realizes.Fig. 5 shows the CONSTRUCTED SPECIFICATION of described ventilation flange 15, the air channel 152 its ring flange has seal groove 151, being surrounded by described seal groove and the some passages 153 being positioned at air channel.Wherein said seal groove 151 and described air channel 152 are placed towards described reactor base plate 23, the planar side of described ventilation flange 15 then with described heating chamber sidewall 14 bottom sole 141 fit tightly, see Fig. 2 and Fig. 3.When being assembled on described reactor body 2, seal groove 151 is also provided with resistant to elevated temperatures rubber seal, to keep to leak out gas between this ventilation flange 15 and described reactor base plate 23.In a kind of modified embodiment, described seal groove 151 can also omit, but is prevented by whole ventilation flange on a sealing gasket, to maintain sealing.Described reactor base plate 23 is provided with base plate passage (because of profile position relation, fail to illustrate in figs. 2 and 3), and this base plate passage one end connects with described air channel 152, and the other end connects with inert gas inleting pipe 18.Be passed through in this inert gas inleting pipe 18 is the noble gas of such as nitrogen etc.Each in wherein said air channel 152 has at least one row and becomes the passage 153 of circle-shaped distribution relative to the axis of described ventilation flange 15.Referring now to Fig. 5, described seal groove 151 and air channel 152 are uniformly arranged at least two sections on the ring flange of described ventilation flange 15, between each section on the independent of one another and each section of same circular rail trace being respectively positioned on the axis of described ventilation flange 15 as the center of circle, and arrangement makes the center of gravity of described ventilation flange 15 be located therein on axis.Each passage 153 is respectively positioned in each air channel 152.Preferably, described at least two sections is 4 sections, 6 sections or more multistage.One noble gas breather 18 is respectively set in above-mentioned each section.Also it is an original creation point of the present invention by air channel 152 subsection setup.The present inventor finds in practice, if each air channel not subsection setup but be arranged to the whole circumferential of the ring flange along described ventilation flange with communicating with each other, then when being passed through nitrogen via inert gas inleting pipe in air channel 152, nitrogen upwards can be gushed out via above-mentioned at least one row's passage 153, act on the bottom surface of the sole 141 being positioned at the heating chamber sidewall above this ventilation flange, described heating chamber sidewall 14 is made to float up and pitch, this float and this jolt can severely impact heating chamber sidewall 14 normally rotate and to be likely to result in the air-tightness in heating chamber impaired.And when each air channel subsection setup, then this heating chamber sidewall 14 does not floats from described reactor base plate 23, the most slightly float and there is no jolt even if floating, this exceeds technical staff and expects, and will greatly facilitate the stable rotation maintaining heating chamber sidewall 14 air-tightness maintaining heating chamber.Inventor have further surprisingly found that, hop count is the most, then heating chamber sidewall jolt the most weak, be more conducive to maintaining the air-tightness in heating chamber.Control the concordance of inert gas flow in each section of corresponding noble gas breather 18, such as, control by mass flow controller or by current limliting packing ring, it is also possible to further such that above-mentioned jolt to die down even disappear.Applicant has further surprisingly found that; when heating chamber sidewall and slightly floating; the nitrogen gushed out from passage 153 mainly via above-mentioned sole 141 and ventilation flange 15 between gap towards heating chamber 51 flows outside; i.e. nitrogen flows towards annular seal space 52 side; thus prevent at raw material source of the gas gap between sole 141 and ventilation flange to heating chamber 51 internal flow, this also protects heater and is not corroded by raw material source of the gas.
The material of described ventilation flange 15 do not had particular/special requirement, as long as it is resistant to heat the high temperature in chamber 51.In practice, this ventilation flange can be by graphite, pottery, aluminium oxide or rustless steel manufacture.
The advantage of the reactor of the present invention is, is optimized the air-tightness in heating chamber by the design of frame for movement, effectively prevent the leakage to heating intracavity of the raw material source of the gas so that the corrosion of raw material source of the gas exempted from by heater, therefore need not coat the protective layer of costliness.Additionally, other parts such as such as heater flow guiding electrode can be changed into relatively the most corrosion-resistant but the more preferable copper of electric conductivity, aluminum or nickel material by corrosion resistant stainless steel material, to reduce the excessive energy loss caused of the resistance of flow guiding electrode.
Embodiment
Offer following example prove the effectiveness of the equipment of the present invention.
Embodiment 1
Experimental condition is as follows:
Heater: the graphite heating material of unprotect coating
The temperature of heater top cover upper surface: 1050 DEG C (correspondingly, the temperature of heater itself is about 1600 DEG C)
1050 DEG C of total heat time heating times: 800 hours
Feed gas conditions: ammonia, 120SLM(SLM=standard liter/min)；Hydrogen, 120SLM；Nitrogen, 150SLM；Do not supply organometallic sources；
Ventilation flange supply gas flow: each 5SLM of purification nitrogen
Absolute pressure in reaction chamber: 99kPa
Heater top cover rotary speed: 15rpm (rpm=rev/min)
If graphite heater and hydrogen, ammonia generation chemical reaction and be corroded, then show as that its resistance raises, surface is roughening, weight change.In order to check whether this graphite heater is corroded, after heating in before heating with 800 hours, implement the test of above-mentioned three.Result is as shown in table 1, it is seen then that 1050 DEG C, in the heat run of 800 hours, graphite heater is not changed in substantially, illustrates that the equipment of the present invention effectively prevent the corrosion of heater.
Table 1
| Resistance, ohm | Normalized Weight (*) | Surface is the most porose | Surface color (* *) | |
| Before heating | 11.2 | 1.000 | Nothing | Black |
| After heating 800 hours | 11.3 | 1.000 | Nothing | Somewhat gray |
(*) the front weight of weight/test after Normalized Weight=test
(* *) surface color compares: naked eyes compare the color of heater before and after heat run.
Embodiment 2
After embodiment 2 is carried out for embodiment 1, the equipment that same heater is placed again into Fig. 1 is carried out.But, the pressure that embodiment 2 is in reaction chamber from the difference of embodiment 1 is different.Concrete experimental condition is as follows:
Heater: the graphite heating material of unprotect coating
Heater top cover upper surface temperature: 1050 DEG C (correspondingly, the temperature of heater itself is about 1600 DEG C)
1050 DEG C of total heat time heating times: 800 hours
Feed gas conditions: ammonia, 120SLM；Hydrogen, 120SLM；Nitrogen, 150SLM；Do not supply organometallic sources
Ventilation flange supply gas flow: each 5SLM of purification nitrogen
Absolute pressure in reacting furnace: 50kPa
Heater top cover rotary speed: 15rpm
If graphite heater and hydrogen, ammonia generation chemical reaction and be corroded, then show as that its resistance raises, surface is roughening, weight change.In order to check whether this graphite heater is corroded, after heating in before heating with 800 hours, implement the test of above-mentioned three.Result is as shown in table 2, it is seen then that 1050 DEG C of embodiment 2, in the heat run of 800 hours, graphite heater is not changed in substantially.800 hours were used the most at the same temperature in view of this graphite heater; therefore actual the use 1600 hours under conditions of without any protective coating of this graphite heater and without any sign being substantially corroded, this strongly suggests the equipment of present invention effectiveness in terms of preventing heater corrosion.
Table 2
| Resistance, ohm | Normalized Weight (*) | Surface is the most porose | Surface color (* *) | |
| Before heating | 11.3 | 1.000 | Nothing | Somewhat gray |
| After heating 800 hours | 11.3 | 0.999 | Nothing | Somewhat gray |
(*) the front weight of weight/test after Normalized Weight=test
(* *) surface color compares: naked eyes compare the color of heater before and after heat run.
The reactor for implementing chemical vapor deposition processes of the present invention is illustrated above in association with accompanying drawing.Obviously, those skilled in the art can carry out some conspicuously improved and changes to above-mentioned reactor, therefore the present invention is not limited to above-mentioned concrete structure.Broadest explanation by appended claim is limited by protection scope of the present invention.
Claims (18)
1. for implementing an equipment for chemical vapor deposition processes, comprising: gas inlet pipe (1), instead
Answer device main body (2), exhaustor (3), aerofluxus collection room (4) and vacuum orifice (5), wherein exhaustor (3)
Outside and one end of being positioned at reactor body (2) connect with aerofluxus collection room (4), and vacuum orifice (5) is arranged
On aerofluxus collection room (4)；Wherein reactor body (2) including: heats chamber (51), surround this heating chamber
Annular seal space (52) and surround this annular seal space (52) reaction chamber (53)；Wherein heat tool in chamber (51)
Having heaters (13) and run through this heating chamber and arrange and pass the quill shaft (7) that reactor body (2) is outside,
Heating chamber (51) is by heating chamber sidewall (14), reactor base plate (23) and is close to be arranged on this reactor
Ventilation flange (15), heating chamber top cover (11) and the outer down tilt on quill shaft (7) top above base plate
Plate (7-4) is be enough to maintain the bubble-tight mode in this heating chamber (51) to be surrounded；Wherein said venting method
Blue (15) are fixed on described reactor base plate (23)；Wherein annular seal space (52) by reactor base plate (23),
Heating chamber sidewall (14), annular seal space sidewall (521) and annular seal space top board (522) are surrounded；Wherein react
Chamber (53) is led to by reactor base plate (23), annular seal space sidewall (521), reaction chamber sidewall (531), air-flow
Road upper cover (10), annular seal space top board (522), heating chamber top cover (11) and quill shaft (7) top
The flat board (7-4) that turns up is surrounded, and wherein gas inlet pipe (1) passes described gas channel upper cover (10)
Connecting with this reaction chamber (53), the upper surface of heating chamber top cover (11) has some circular grooves (12),
This circular groove is for laying the substrate of chemical vapor deposition process to be carried out；Wherein said circular groove (12)
Inside being placed with substrate pallet (17), this substrate pallet (17) is waited to be carried out chemical gaseous phase lodgment for support
The substrate of reason, the outer rim of this substrate pallet (17) has gear, and this gear is nibbled mutually with central gear (16)
Close；Wherein the other end of exhaustor (3) connects with described reaction chamber (53)；Described heating chamber top cover (11)
Can rotate under the drive of described quill shaft (7), and described heating chamber sidewall (14) can be with described heating
Chamber top cover (11) synchronous rotary；It is characterized in that having close on the ring flange of described ventilation flange (15)
Seal groove (151), the air channel (152) surrounded by described seal groove and be positioned at the some logical of air channel
Pore (153).
Equipment the most according to claim 1, its exocoel (54) also including surrounding this reaction chamber (53),
This exocoel (54) is by reactor base plate (23), reactor outer wall (541), reaction chamber sidewall (531), gas
Circulation road upper cover (10) and enclosing cover (9) are surrounded, between this exocoel (54) and described reaction chamber (53)
By the gap between described reaction chamber sidewall (531) and reactor base plate (23) or with gas channel upper cover (10)
Between gap and keep gas communication between this reaction chamber (53).
Equipment the most according to claim 2, it is spacing that wherein said heating chamber (51) inside has at least three
Bearing (22), the outer rim of each in this at least three Limit Bearing (22) and described heating chamber sidewall (14)
Inner side smooth tangent.
Equipment the most according to claim 1, wherein said quill shaft (7) passes downwards reactor body
(2) outside, and described quill shaft (7) has travelling gear (8) on this outer portion part.
Equipment the most according to claim 1, has interior axle (7-3) inside the hollow of wherein said quill shaft (7),
This interior axle is arranged with this quill shaft coaxial line, and this interior axle is positioned at the central gear of this shaft end for driving
(16) rotate.
Equipment the most according to claim 1, wherein said seal groove (151) and air channel (152) exist
It is uniformly arranged at least two sections on the ring flange of described ventilation flange (15), between each section independent of one another and each section
It is respectively positioned on the same circular rail trace as the center of circle of the axis with described ventilation flange (15), and layout side
Formula makes the center of gravity of described ventilation flange (15) be located therein on axis.
7. the equipment of claim 6, described at least two sections is 4 sections, 6 sections or more multistage.
8. the equipment of claim 1, wherein said seal groove (151) and described air channel (152) court
Place to described reactor base plate (23), the planar side of described ventilation flange (15) and side, described heating chamber
The sole (141) of wall (14) bottom fits tightly.
9. the equipment of claim 1, wherein said reactor base plate (23) is provided with base plate passage (231),
This base plate passage (231) one end connects with described air channel (152), the other end and protection gas air inlet pipe
(18) connection.
10. the equipment of claim 1, each in wherein said air channel (152) has at least one
Arrange the passage (153) becoming circle-shaped distribution relative to the axis of described ventilation flange (15).
The equipment of 11. claim 1, wherein passes described reactor base plate (23) at described quill shaft (7)
Place provides the first magnet fluid sealing device (6-1).
The equipment of 12. claim 1, wherein the outside at described reactor body (2) is provided with U-shaped even
Siphunculus (21), its one end open connects with described heating chamber (51), its other end opening and described reaction chamber
(53) connection, is provided with valve (19) this U-shaped communicating pipe (21).
The equipment of 13. claim 5, wherein said interior axle (7-3) passes the end of described quill shaft (7)
Portion is also fixed on disk (24), and this interior axle (7-3) can rotate and maybe can not rotate.
The equipment of 14. claim 5, wherein passes described quill shaft (7) described interior axle (7-3)
The second magnet fluid sealing device (6-2) it is provided with in place of Di Bu.
The equipment of 15. claim 1, wherein said quill shaft (7) include epimere quill shaft (7-1) and
Hypomere quill shaft (7-2), therebetween with screw thread or bonded, can transmit moment of torsion.
The equipment of 16. claim 15, wherein constitutes the thermostability ratio of the material of epimere quill shaft (7-1)
The thermostability of the material constituting hypomere quill shaft (7-2) is eager to excel.
The equipment of 17. claim 1, wherein said heater (13) surface is not coated with protective layer.
The equipment of 18. claim 1, wherein said heater sidewall (14) include sole (141),
One vertical wall (142), extend out circular table (143) and the second vertical wall (144), wherein vertical by first
The top of wall (142) continues to upwardly extend a segment distance after extending out a segment distance, extends out annular described in being formed
Table top (143) and the described second vertical wall (144), this extends out circular table for supporting described heater top
Lid (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410093122.XA CN103834931B (en) | 2014-03-13 | 2014-03-13 | Equipment for carrying out chemical vapor deposition process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410093122.XA CN103834931B (en) | 2014-03-13 | 2014-03-13 | Equipment for carrying out chemical vapor deposition process |
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| CN103834931A CN103834931A (en) | 2014-06-04 |
| CN103834931B true CN103834931B (en) | 2017-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410093122.XA Active CN103834931B (en) | 2014-03-13 | 2014-03-13 | Equipment for carrying out chemical vapor deposition process |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108796473B (en) * | 2018-06-26 | 2020-03-31 | 重庆理工大学 | Thermal decomposition preparation method of film |
| CN113529056B (en) * | 2021-07-16 | 2023-06-30 | 中科微光子科技(成都)有限公司 | Automatic equipment for preparing passive device and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062386A (en) * | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
| JP2005311161A (en) * | 2004-04-23 | 2005-11-04 | Mitsubishi Heavy Ind Ltd | Thin-film manufacturing apparatus and manufacturing method |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN103140602A (en) * | 2010-08-02 | 2013-06-05 | 威科仪器有限公司 | Exhaust for cvd reactor |
-
2014
- 2014-03-13 CN CN201410093122.XA patent/CN103834931B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062386A (en) * | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
| JP2005311161A (en) * | 2004-04-23 | 2005-11-04 | Mitsubishi Heavy Ind Ltd | Thin-film manufacturing apparatus and manufacturing method |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN103140602A (en) * | 2010-08-02 | 2013-06-05 | 威科仪器有限公司 | Exhaust for cvd reactor |
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| Publication number | Publication date |
|---|---|
| CN103834931A (en) | 2014-06-04 |
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Effective date of registration: 20161208 Address after: 017000 the Inner Mongolia Autonomous Region city Ordos Hangjinqi Zhen He Xi Jie Bei Di Shui Xiao Qu Applicant after: Inner Mongolia Huayan Xinguang Technology Co., Ltd. Address before: 100176 Beijing city Hondar Daxing District economic and Technological Development Zone No. 12 North Road, room A813 Applicant before: China (Beijing) Technology Co., Ltd. |
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