CN103834931A - Equipment for carrying out chemical vapor deposition process - Google Patents
Equipment for carrying out chemical vapor deposition process Download PDFInfo
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- CN103834931A CN103834931A CN201410093122.XA CN201410093122A CN103834931A CN 103834931 A CN103834931 A CN 103834931A CN 201410093122 A CN201410093122 A CN 201410093122A CN 103834931 A CN103834931 A CN 103834931A
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Abstract
The invention relates to equipment for carrying out a chemical vapor deposition process. A most important reactor main body 2 comprises a heating cavity 51, a sealing cavity 52 and a reaction cavity 53, wherein the heating cavity 51 comprises a heater 13, a hollow shaft 7 and a ventilating flange 15; the ventilating flange 15 is fixed on a reactor bottom plate 23; the sealing cavity 52 is defined by the reactor bottom plate 23, a heating cavity side wall 14, a sealing cavity wall 521 and a sealing cavity top plate 522; the reaction cavity 53 is enclosed by the reactor bottom plate 23, the sealing cavity side wall 521, a reaction cavity side wall 531, an airflow channel upper cover 10, the sealing cavity top plate 522, a heating cavity top cover 11 and an outward folded flat plate 7-4 at the upper part of the hollow shaft 7. The equipment is characterized in that the heating cavity top cover 11 can rotate under drive of the hollow shaft 7, and the heating cavity side wall 14 can rotate synchronously with the heating cavity top cover 11.
Description
Technical field
The invention belongs to semiconductor device fabrication field, more specifically, the present invention relates to chemical vapour deposition field.
Background technology
Recently, gallium nitride based semiconductor film is widely used in fields such as photodiode, high frequency power component, Ultraviolet sensors, and its demand also sharply rises.Gallium nitride based semiconductor film is all grown with vapor deposition apparatus substantially.Organometallics chemical vapour deposition (MOCVD) process refers to and at high temperature makes the unstripped gas that contains specific composition element decompose or reaction, the film of this component or layer on depositing on substrate thus, wherein this specific composition element is determined according to the chemical constitution of semiconducter device to be obtained.
For example, when to Grown gallium nitride semiconductor layers, can pass into nitrogen source gas [for example ammonia, its pyrolytic decomposition becomes nitrogen and hydrogen], gallium source gas [for example trimethyl-gallium (TMGa) or triethyl-gallium (TEGa)], two kinds of unstripped gases occur to decompose and reaction at high temperature, can on silicon substrate, grow GaN semiconductor film.When needs are when adulterating other element in gan, also may pass into the raw materials such as trimethyl aluminium, trimethyl indium, triethylindium, and as hydrogen, the nitrogen etc. of carrier gas.Substrate mainly uses sapphire, carborundum, gan etc.The growth temperature of the representative materials-gan of gallium nitride based semiconductor film is 1000 ℃ of left and right.In the time carrying out chemical vapour deposition on well heater top cover substrate being placed in chemical vapor depsotition equipment, heated by the well heater being positioned at below well heater top cover.The growth temperature of gan is in the time of 1000 ℃, and the heating element temperature of well heater can rise to the high temperature of 1500 ℃ of left and right.
In order to improve the homogeneity of growing film, the well heater top cover of MOCVD device support substrate or block substrate is generally designed to rotary-type structure.But to become rotational structure be impossible by adding heater design that hot heater top cover uses.That is to say, between the well heater top cover of rotational structure and the well heater being fixed, certainly will produce space.Unstripped gas from this void diffusion to well heater, thereby and the heating element of well heater produce chemical reaction, therefore this well heater can be corroded, reduce the work-ing life of well heater, will lose efficacy after using for some time, the well heater of having to again change.This uses to the industrialization of this reactor and causes very burden, because the frequent shutdowns of having to is to change this well heater.The particularly semi-conductive MOCVD equipment of growing nitride, the temperature rise to 1500 at heater heats position ℃ left and right, temperature is very high, so heating material is easy and ammonia, hydrogen produce chemical reaction.
A kind of method that delays this well heater corrosion is to plate layer protective layer on this heater surfaces; for example plate boron nitride, silicon carbide or tantalum carbide protective layer by high temperature pyrolysis technique, to prevent that heater material from being corroded by the degradation production of each source gas.But, plate complex process and the costliness of this protective layer, cause reactor cost suddenly to increase.In addition; there is the distillation of local material in the long-term at high temperature meeting of use of protective membrane, causes in protective membrane and produce aperture, therefore unstripped gas may can be diffused into heating element main structure material from a grain circle for these apertures and protective membrane; make its corrosion, therefore need periodic replacement.Therefore, plate protective layer and only can extend the life-span of well heater, but can not play permanent protection effect.In order to stop unstripped gas to be diffused into well heater, utilize container that its appropriateness is wrapped up, can deal with problems.But the reasons such as working accuracy, assembly precision, thermal expansion have very large difficulty.
In order to solve above-mentioned technical barrier; the inventor invented a kind of special construction for implementing the reactor of chemical vapor deposition processes; it can fundamentally avoid heater material to touch the degradation production of each source gas; therefore; heater material can not corrode; and then do not need to go again protective layer plating, not only significant prolongation the life-span of well heater, and significantly reduced the manufacturing cost of well heater.
Summary of the invention
The present invention relates to a kind of for implementing the reactor of chemical vapor deposition processes, it comprises: gas inlet pipe 1, reactor body 2, vapor pipe 3, exhaust collection chamber 4 and vacuum orifice 5, outside and one end that wherein vapor pipe 3 is positioned at reactor body 2 are communicated with exhaust collection chamber 4, and vacuum orifice 5 is arranged on exhaust collection chamber 4; Wherein reactor body 2 comprises: the reaction chamber 53 in heating chamber 51, the annular seal space 52 that surrounds this heating chamber and encirclement sealing chamber 52; Wherein in heating chamber 51, there is well heater 13 and run through this heating chamber setting and pass the quill shaft 7 of reactor body 2 outsides, heating chamber 51 by heating chamber sidewall 14, reactor base plate 23 and the dull and stereotyped 7-4 that turns up that is close to the ventilation flange 15, heating chamber top cover 11 and quill shaft 7 tops that are arranged on this reactor base plate top surrounded in the bubble-tight mode that is enough to maintain this heating chamber 51; Wherein said ventilation flange 15 is fixed on described reactor base plate 23; Wherein annular seal space 52 is surrounded by reactor base plate 23, heating chamber sidewall 14, capsule walls 521 and annular seal space top board 522; Wherein reaction chamber 53 is surrounded by the dull and stereotyped 7-4 that turns up on reactor base plate 23, annular seal space sidewall 521, reaction chamber sidewall 531, gas channel upper cover 10, annular seal space top board 522, heating chamber top cover 11 and quill shaft 7 tops, wherein gas inlet pipe 1 is communicated with this reaction chamber 53 through described gas channel upper cover 10, the upper surface of heating chamber top cover 11 has some circular grooves 12, and this circular groove is for the substrate of laying chemical vapor deposition process to be implemented; Wherein the other end of vapor pipe 3 is communicated with described reaction chamber 53; It is characterized in that, described heating chamber top cover 11 can rotate under the drive of described quill shaft 7, and described heating chamber sidewall 14 can with described heating chamber top cover 11 synchronous rotaries.
Accompanying drawing summary
Fig. 1 is of the present invention for implementing the outside three-dimensional view of reactor of chemical vapor deposition processes.
Fig. 2 is for implementing the cross sectional view after the reactor of chemical vapor deposition processes is cut open along the axis of quill shaft by of the present invention.
Fig. 3 is for implementing the three-dimensional view after the reactor of chemical vapor deposition processes is cut open along the axis of quill shaft by of the present invention.
Fig. 4 and Fig. 3 are basic identical, have just added gas channel upper cover.
Fig. 5 is the schematic diagram of ventilation flange.
Fig. 6 is the Limit Bearing distribution schematic diagram in heating chamber.
Reference numerals list in each figure:
1. gas inlet pipe; 2. reactor body; 3. vapor pipe; 4. exhaust collection chamber; 5. vacuum orifice; 6-1. the first magnetic current sealing device; 6-2. the second magnetic current sealing device; 7. quill shaft, wherein: 7-1. epimere quill shaft, 7-2. hypomere quill shaft; Axle in 7-3.; The 7-4. flat board that turns up; 8. transmitting gear; 9. enclosing cover; 10. gas channel upper cover; 11. well heater top covers; 12. circular grooves; 13. well heaters; 14. heating chamber sidewalls, wherein: 141. soles; 142. first vertical walls; 143. extend out circular table; 144. second vertical walls; 15. ventilation flanges, wherein: 151. seal grooves; 152. air channel; 153. ventilating pit; 154. bolt hole; 16. central gears; 17. substrate pallets; 18. inert gas inleting pipes; 19. valves; 20.U shape communicating pipe the opening in heating chamber; 21.U shape communicating pipe; 22. Limit Bearings; 23. reactor base plates, wherein: 231. base plate ventilating pits; 24. disks; 51. heating chambers; 52. annular seal spaces; 53. reaction chambers; 54. exocoels; 521. annular seal space sidewalls; 522. annular seal space top boards; 531. reaction chamber sidewalls; 541. reactor outer walls.
Detailed Description Of The Invention
Now, be described in detail as follows for the reactor of implementing chemical vapor deposition processes of the present invention with reference to each accompanying drawing.
Referring to Fig. 1, its outside three-dimensional view that is reactor of the present invention.This reactor comprises gas inlet pipe 1, reactor body 2, vapor pipe 3, exhaust collection chamber 4 and vacuum orifice 5 on the whole.Wherein in reactor body 2, also have complicated internal structure, this will describe in detail hereinafter.Outside and one end that vapor pipe 3 is positioned at reactor body 2 are communicated with exhaust collection chamber 4, its the other end and described vacuum orifice 5 are arranged on exhaust collection chamber 4, this vacuum orifice 5 can be connected to vacuum pump (not shown in figure 1), so that described reactor body 2 is vacuumized to processing.In Fig. 1, also show quill shaft 7, be positioned on quill shaft 7 and be positioned at transmitting gear 8 and the inert gas inleting pipe 18 of reactor body 2 outsides, below will introduce in detail.Reactor of the present invention adopts the mode that quill shaft 7 is vertically oriented to place in the time of work.
Referring to Fig. 2 and Fig. 3, they be respectively cross sectional view after the reactor shown in Fig. 1 is cut open along the axis of quill shaft 7 and cut open after stereographic map.Wherein visible, reactor body 2 mainly comprises heating chamber 51, annular seal space 52 and reaction chamber 53 and optional exocoel 54 from inside to outside, and forms the structure unit in each chamber etc.Below in conjunction with Fig. 2 and Fig. 3, to each chamber and component parts thereof, details are as follows:
Heating chamber 51, it is positioned at the penetralia of described reactor body 2, has well heater 13 and run through this heating chamber setting and pass the quill shaft 7 of reactor body 2 outsides in this heating chamber 51; This heating chamber 51 by heating chamber sidewall 14, reactor base plate 23 and the dull and stereotyped 7-4 that turns up that is close to the ventilation flange 15, heating chamber top cover 11 and quill shaft 7 tops that are arranged on this reactor base plate top surrounded in the bubble-tight mode that is enough to maintain this heating chamber 51; Wherein said ventilation flange 15 is fixed on described reactor base plate 23.The effect of this heating chamber is hold described well heater 13 and open isolated to this well heater and outside atmosphere on Design of Mechanical Structure, to protect this well heater not corroded.In addition, also have for the auxiliary element such as wire and terminal stud to well heater energising in heating chamber 51, these auxiliary elements can easily be arranged as the case may be by those skilled in the art, therefore for the purpose of drawing is clear, not shown in Figure 2.Hereinafter will set forth, described heating chamber sidewall 14 can rotate, and overall rocking not when heating chamber sidewall 14 is rotated, provides at least three Limit Bearings 22 in heating chamber 51 inside, as shown in Figure 6.The outer rim of each in these at least three Limit Bearings 22 and the inner side of described heating chamber sidewall 14 are smooth tangent." smooth " means between Limit Bearing 22 and heating chamber sidewall 14 without any friction.These at least three Limit Bearings are fixed.In a kind of preferred embodiment, this heating chamber sidewall 14 also can be divided into two sections, and two sections connect in mode that can transmitting torque.Its epimere is because manufacturing near the better stupalith of well heater temperature high heat resistance, and hypomere is because of relatively lower away from well heater temperature, therefore can adopt relatively cheap graphite to manufacture.
Annular seal space 52, it surrounds described heating chamber 51; With reaction chamber 53, it surrounds annular seal space 52 described in this; Wherein annular seal space 52 is surrounded by reactor base plate 23, heating chamber sidewall 14, capsule walls 521 and annular seal space top board 522; Wherein reaction chamber 53 is surrounded by the dull and stereotyped 7-4 that turns up on reactor base plate 23, annular seal space sidewall 521, reaction chamber sidewall 531, gas channel upper cover 10, annular seal space top board 522, heating chamber top cover 11 and quill shaft 7 tops, and wherein gas inlet pipe 1 is communicated with this reaction chamber 53 through described gas channel upper cover 10.Wherein the upper surface of heating chamber top cover 11 has some circular grooves 12, and this circular groove is for the substrate of laying chemical vapor deposition process to be implemented; Wherein the other end of vapor pipe 3 is communicated with described reaction chamber 53; Wherein said heating chamber top cover 11 can rotate under the drive of described quill shaft 7, and described heating chamber sidewall 14 can with described heating chamber top cover 11 synchronous rotaries; In circular groove 12 on described well heater top cover 11, be placed with substrate pallet 17, this substrate pallet 17 is for supporting the substrate of waiting to be carried out chemical vapor deposition process, and the outer rim of this substrate pallet 17 has gear, and this gear is meshed with described central gear 16.When work, by gas inlet pipe 1, needed chemical vapor deposition processes raw material source of the gas is passed in the reaction chamber of reactor body 2.When this unstripped gas source and course heater via top cover top, be heated and occur to decompose to complete chemical vapor deposition processes, unreacted raw material source of the gas is discharged reaction chamber through vapor pipe 3, after gather exhaust collection chamber 4, discharges from vacuum orifice 5.
Described well heater sidewall 14 can be that the present invention improves greatly with respect to one of conventional art with described heating chamber top cover 11 synchronous rotaries.If well heater sidewall 14 maintains static, and only described heating chamber top cover 11 is rotated, on the two contact surface, will certainly there is friction and wear, cause the resistance to air loss at the two contact surface place worse and worse, unstripped gas or its thermal decomposition product can leak in heating chamber 51 and contact with heater material, cause corrosion and the inefficacy of heater material.The two is designed to can synchronous rotary, can eliminate the friction and wear on the two contact surface, make contact surface place remain good resistance to air loss, preventing that unstripped gas or its thermal decomposition product from can leak in heating chamber 51 contacts with heater material, has also just prevented corrosion and the inefficacy of heater material.Had the design of such uniqueness, heater material can remove plating protective layer, in addition; wire, the terminal stud etc. being attached thereto all can use common material; such as copper, aluminium, nickel etc., and need not to be corrosion resistant material, this has significantly reduced manufacturing cost and replacement cost.Therefore, in the present invention, heater material is uncoated protective layer.The concrete geometrical shape of this well heater sidewall 14 can be by those skilled in the art according to guaranteeing that bubble-tight principle designs, and have various design.For example, a kind of design is, described well heater sidewall 14 comprises sole 141, the first vertical wall 142, extends out circular table 143 and the second vertical wall 144, after wherein extending out a segment distance by the top of the first vertical wall 142, continue upwards to extend a segment distance, described in forming, extend out circular table 143 and the described second vertical wall 144, this extends out circular table for supporting described well heater top cover 11.Obviously can also there is other design, as long as can make this heating chamber sidewall and described heating chamber top cover 11 synchronous rotaries and can keep resistance to air loss.
In preferred version of the present invention, can also provide the exocoel 54 that surrounds described reaction chamber 53, to provide protection to exocoel 54 with interior each chamber.This exocoel 54 is surrounded by reactor base plate 23, reactor outer wall 541, reaction chamber sidewall 531, gas channel upper cover 10 and enclosing cover 9, between this exocoel 54 and described reaction chamber 53 by the gap between described reaction chamber sidewall 531 and reactor base plate 23 or and gas channel upper cover 10 between gap and keep gas communication between this reaction chamber 53.
In reactor body 2, reactor base plate 23 is that each chamber is public, is used to provide sealed bottom.Between annular seal space 52, reaction chamber 53, be wherein gas communication, this can realize by the gap between the gap between annular seal space sidewall 521 and reactor base plate 23 or annular seal space top board 522 and heating chamber sidewall 14.These gaps can deliberately process, and can be also the gaps of naturally leaving in the time assembling because of each part.
Each chamber except heating chamber is all gas communications, and this feature causes, in the time vacuumizing by described vapor pipe 3, acting on to this spreading all over property of vacuum action each chamber in annular seal space, reaction chamber and exocoel.
Described quill shaft 7 passes the outside of reactor body 2 downwards, and described quill shaft 7 has transmitting gear 8 on outer portion part.Pass described reactor base plate 23 places at described quill shaft 7 the first magnetic current sealing device 6-1 is provided, to guarantee still to maintain the resistance to air loss between the perforation on this quill shaft and reactor base plate in the time that this quill shaft rotates.Magnetic current sealing device is a kind of conventional sealer in this area, is mainly used in the turning axle through encloses container to carry out dynamic seal.Described transmitting gear 8 can rotate under external force drives, and then drives quill shaft 7 to rotate.Turning up of these quill shaft 7 tops is connected by the mode of energy transmitting torque between dull and stereotyped 7-4 and described well heater top cover 11, for example, connect by pin or key, to make the rotation of quill shaft 7 can drive well heater top cover 11 to be rotated.In preferred embodiments, described quill shaft 7 can be divided at least two sections, and described quill shaft 7 can comprise epimere quill shaft 7-1 and hypomere quill shaft 7-2, connects, with energy transmitting torque between the two with screw thread or key.Be divided into two sections and there is following benefit: epimere is in heating chamber inside, and near well heater, surrounding temperature is high, can use the material that thermotolerance is strong; And hypomere is in heating chamber middle and lower part and even heating chamber outside, surrounding temperature is low, thus can use the thermotolerance material slightly poorer than epimere, to save equipment cost.In addition,, once after epimere damages under hot environment, can easily disassemble and change, hypomere needn't be changed.
The hollow inside of described quill shaft 7 has interior axle 7-3, this interior axle and the 7 coaxial line settings of this quill shaft, and this interior axle is for driving the central gear 16 that is positioned at this shaft end to rotate.This interior axle can be solid, can be also hollow.This interior axle top is fixed with a central gear 16.This interior axle also passes the bottom of described quill shaft 7 and is fixed on disk 24, and this interior axle 7-3 can rotate maybe and can not rotate.In the time that interior axle 7-3 maintains static, the central gear 16 at its top also maintains static.In the time that well heater top cover 11 is being driven rotation by quill shaft 7, the gear of substrate pallet 17 outer rims is because being driven generation " rotation " with engaging of central gear 16, corresponding, well heater top cover 11 is called to " revolution " around the rotation of the axis of quill shaft 7, obviously the now rotation of substrate pallet 17 by with the revolution opposite direction of well heater top cover.If interior axle 7-3 rotates, the central gear 16 at its top also rotates thereupon, as long as any one in the two of the turning direction and velocity of rotation of this central authorities' gear 16 is different from turning direction and the rotational angular velocity of well heater top cover 11, described substrate pallet 17 also can be driven generation " rotation " because of the gear of its outer rim and engaging of central gear 16.In preferred embodiments, interior axle 7-3 maintains static, and only depends on quill shaft 7 to drive well heater top cover 11 to revolve round the sun and rely on the gear of described substrate pallet 17 outer rims and the engagement of central gear 16 and make substrate pallet 17 be driven generation " rotation ".The benefit that revolution and rotation occur has been to improve the homogeneity of being heated evenly property and vapour deposition effect.
In preferred embodiments, the bottom part that passes described quill shaft 7 at described interior axle 7-3 is provided with the second magnetic current sealing device 6-2, to guarantee in the time that quill shaft 7 rotates or when quill shaft 7 and interior axle 7-3 rotate, this passes the resistance to air loss of part.
In a preferred embodiment of the invention, have U-shaped communicating pipe 21 in the outer setting of described reactor body 2, one end opening is communicated with described heating chamber 51, and its other end opening is communicated with described reaction chamber 53, and this U-shaped communicating pipe 21 is provided with valve 19.When the object that this U-shaped communicating pipe is set is, before chemical vapour deposition starts, reaction chamber 53 is vacuumized to pre-treatment, maintain the pressure equilibrium between heating chamber 51 and reaction chamber 53.Before chemical vapour deposition starts, need to vacuumize to remove gas wherein to reaction chamber 53, the in the situation that of this not 21 U-shaped communicating pipe, in the time that reaction chamber 53 is vacuumized, because heating chamber 51 is not evacuated simultaneously, the pressure difference between two chambeies can be by well heater top cover 11 jack-up, even can collide described gas channel upper cover 10 and cause damage.By this U-shaped communicating pipe 21 is set, and in the time vacuumizing, open valve 19, can make heating chamber 51 and reaction chamber 53 be evacuated simultaneously, making does not have pressure difference between the two, therefore well heater top cover 11 can not float.When vacuumizing when reaching target vacuum and spending, close vacuum pump, and close this valve, then in reaction chamber, pass into raw material source of the gas by gas inlet pipe 11, until reach the needed pressure of chemical vapour deposition reaction, then heater heats, and is heated to and starts reaction after temperature of reaction.
Another unique distinction of the present invention is the design of described ventilation flange 15.As shown in Figures 2 and 3, described ventilation flange 15 is fixed on described reactor base plate 23, and this fixedly realizes by conventional bolt.Fig. 5 shows the CONSTRUCTED SPECIFICATION of described ventilation flange 15, the air channel 152 that have seal groove 151 on its ring flange, is surrounded by described seal groove and the some ventilating pits 153 that are positioned at air channel.Wherein said seal groove 151 and described air channel 152 are placed towards described reactor base plate 23, and the planar side of described ventilation flange 15 fits tightly with the sole 141 of described heating chamber sidewall 14 bottoms, sees Fig. 2 and Fig. 3.In the time being assembled on described reactor body 2, in seal groove 151, also provide resistant to elevated temperatures rubber seal, to keep can not leaking out gas between this ventilation flange 15 and described reactor base plate 23.In a kind of modified embodiment, described seal groove 151 also can omit, but whole ventilation flange is prevented on a gasket, to maintain sealing.Described reactor base plate 23 is provided with base plate ventilating pit (because of profile position relation, failing shown in Fig. 2 and Fig. 3), and this base plate ventilating pit one end is communicated with described air channel 152, and the other end is communicated with inert gas inleting pipe 18.What in this inert gas inleting pipe 18, pass into is the rare gas element such as nitrogen.Each in wherein said air channel 152 has at least one row and becomes with respect to the axis of described ventilation flange 15 ventilating pit 153 of circle-shaped distribution.Referring now to Fig. 5,, described seal groove 151 and air channel 152 evenly arrange at least two sections on the ring flange of described ventilation flange 15, between each section, independent of one another and each section is all positioned at axis take described ventilation flange 15 on the same circular rail trace in the center of circle, and decoration form is positioned on its axis the center of gravity of described ventilation flange 15.Each ventilating pit 153 is all positioned at each air channel 152.Preferably, described at least two sections is 4 sections, 6 sections or multistage more.A rare gas element ventpipe 18 is respectively set in above-mentioned each section.Also be an original creation point of the present invention by air channel 152 subsection setups.The inventor finds in practice, if not subsection setup but communicate with each other and be arranged to the whole circumferential along the ring flange of described ventilation flange of each air channel, via inert gas inleting pipe when passing into nitrogen in air channel 152, nitrogen can upwards be gushed out via above-mentioned at least one row's ventilating pit 153, act on the bottom surface of sole 141 of the heating chamber sidewall that is positioned at this ventilation flange top, make described heating chamber sidewall 14 upwards float and pitch, this floats and this jolts and can seriously affect the normal rotation of heating chamber sidewall 14 may cause the resistance to air loss of heating chamber impaired.And in the time of each air channel subsection setup, this heating chamber sidewall 14 does not float from described reactor base plate 23 substantially, jolt even if float also only slightly to float and there is no, this exceeds technician expects, and the resistance to air loss that maintains the stable rotation of heating chamber sidewall 14 and maintain heating chamber being greatly conducive to.The inventor also surprisingly finds, hop count is more, heating chamber sidewall jolt more weakly, be more conducive to maintain the resistance to air loss of heating chamber.Control the consistence of the each section of inert gas flow in corresponding rare gas element ventpipe 18, for example, control by mass flow controller or by current limliting packing ring, can also further make the above-mentioned even disappearance that dies down of jolting.Applicant also surprisingly finds; in the time that heating chamber sidewall floats slightly; the nitrogen of gushing out from ventilating pit 153 is the flows outside towards heating chamber 51 via the gap between above-mentioned sole 141 and ventilation flange 15 mainly; be that nitrogen is towards annular seal space 52 1 side flow; thereby prevented that the gap place of raw material source of the gas between sole 141 and ventilation flange is to heating chamber 51 internal flows, this has also protected well heater not to be subject to the corrosion of raw material source of the gas.
Material to described ventilation flange 15 does not have particular requirement, as long as it can tolerate the high temperature in heating chamber 51.In practice, this ventilation flange can be manufactured by graphite, pottery, aluminum oxide or stainless steel.
The advantage of reactor of the present invention is, has optimized the resistance to air loss of heating chamber by the design of physical construction, has effectively prevented that raw material source of the gas from, to the leakage in heating chamber, making well heater exempt from the corrosion of raw material source of the gas, therefore needn't apply expensive protective layer.In addition, can change relatively not corrosion-resistant but the better copper of electroconductibility, aluminium or nickel material into by corrosion resistant stainless material other component such as well heater flow guiding electrode, to reduce the excessive energy loss causing of resistance of flow guiding electrode.
Embodiment
Provide following examples to prove the validity of equipment of the present invention.
Test conditions is as follows:
Well heater: the graphite heating material of unprotect coating
The temperature of well heater top cover upper surface: 1050 ℃ (correspondingly, the temperature of well heater itself is approximately 1600 ℃)
1050 ℃ of total heat-up times: 800 hours
Unstripped gas condition: ammonia, 120SLM(SLM=standard liter/min); Hydrogen, 120SLM; Nitrogen, 150SLM; Do not supply organometallic sources;
Ventilation flange supply gas amount: the each 5SLM of purification nitrogen
Absolute pressure: 99kPa in reaction chamber
Well heater top cover speed of rotation: 15rpm (turn/per minute of rpm=)
If graphite heater and hydrogen, ammonia generation chemical reaction and be corroded, show as its resistance rising, surperficial roughen, changes in weight.In order to check whether this graphite heater is corroded, before heating and after heating in 800 hours, implement the test of above-mentioned three.Result is as shown in table 1, visible, and in the heat test of 1050 ℃, 800 hours, graphite heater does not change substantially, illustrates that equipment of the present invention has prevented the corrosion of well heater effectively.
Table 1
| ? | Resistance, ohm | Normalized Weight (*) | Whether surface is porose | Surface color (* *) |
| Before heating | 11.2 | 1.000 | Nothing | Black |
| Heat after 800 hours | 11.3 | 1.000 | Nothing | Gray a little |
(*) the front weight of weight/test after Normalized Weight=test
(* *) surface color comparison: naked eyes are the color of heat test front and back well heater relatively.
Well heater: the graphite heating material of unprotect coating
Well heater top cover upper surface temperature: 1050 ℃ (correspondingly, the temperature of well heater itself is approximately 1600 ℃)
1050 ℃ of total heat-up times: 800 hours
Unstripped gas condition: ammonia, 120SLM; Hydrogen, 120SLM; Nitrogen, 150SLM; Do not supply organometallic sources
Ventilation flange supply gas amount: the each 5SLM of purification nitrogen
Absolute pressure: 50kPa in Reaktionsofen
Well heater top cover speed of rotation: 15rpm
If graphite heater and hydrogen, ammonia generation chemical reaction and be corroded, show as its resistance rising, surperficial roughen, changes in weight.In order to check whether this graphite heater is corroded, before heating and after heating in 800 hours, implement the test of above-mentioned three.Result is as shown in table 2, visible, and in the heat test of 1050 ℃, 800 hours of embodiment 2, graphite heater does not change substantially.Consider that this graphite heater had used at the same temperature 800 hours in embodiment 1; therefore this graphite heater reality has been used 1600 hours under the condition without any protective coating, without any sign being obviously corroded, this effectively illustrates that equipment of the present invention is in the validity preventing aspect well heater corrosion.
Table 2
| ? | Resistance, ohm | Normalized Weight (*) | Whether surface is porose | Surface color (* *) |
| Before heating | 11.3 | 1.000 | Nothing | Gray a little |
| Heat after 800 hours | 11.3 | 0.999 | Nothing | Gray a little |
(*) the front weight of weight/test after Normalized Weight=test
(* *) surface color comparison: naked eyes are the color of heat test front and back well heater relatively.
Below for example understand by reference to the accompanying drawings of the present invention for implementing the reactor of chemical vapor deposition processes.Obviously, those skilled in the art can carry out some apparent improvement and variations to above-mentioned reactor, therefore the present invention is not limited to above-mentioned concrete structure.Protection scope of the present invention limits the explanation of the broad sense by appended claim.
Claims (20)
1. one kind for implementing the equipment of chemical vapor deposition processes, it comprises: gas inlet pipe (1), reactor body (2), vapor pipe (3), exhaust collection chamber (4) and vacuum orifice (5), outside and one end that wherein vapor pipe (3) is positioned at reactor body (2) are communicated with exhaust collection chamber (4), and vacuum orifice (5) is arranged on exhaust collection chamber (4); Wherein reactor body (2) comprising: heating chamber (51), surround this heating chamber annular seal space (52) and surround sealing chamber (52) reaction chamber (53); Wherein in heating chamber (51), there is well heater (13) and run through this heating chamber setting and pass the outside quill shaft (7) of reactor body (2), heating chamber (51) by heating chamber sidewall (14), reactor base plate (23) and the flat board that turns up (7-4) of being close to the ventilation flange (15), heating chamber top cover (11) and quill shaft (7) top that are arranged on this reactor base plate top surrounded in the bubble-tight mode that is enough to maintain this heating chamber (51); Wherein said ventilation flange (15) is fixed on described reactor base plate (23); Wherein annular seal space (52) is surrounded by reactor base plate (23), heating chamber sidewall (14), capsule walls (521) and annular seal space top board (522); Wherein reaction chamber (53) is surrounded by the flat board that turns up (7-4) on reactor base plate (23), annular seal space sidewall (521), reaction chamber sidewall (531), gas channel upper cover (10), annular seal space top board (522), heating chamber top cover (11) and quill shaft (7) top, wherein gas inlet pipe (1) is communicated with this reaction chamber (53) through described gas channel upper cover (10), the upper surface of heating chamber top cover (11) has some circular grooves (12), and this circular groove is for the substrate of laying chemical vapor deposition process to be implemented; Wherein the other end of vapor pipe (3) is communicated with described reaction chamber (53); It is characterized in that, described heating chamber top cover (11) can rotate under the drive of described quill shaft (7), and described heating chamber sidewall (14) can with described heating chamber top cover (11) synchronous rotary.
2. according to the equipment of claim 1, it also comprises the exocoel (54) that surrounds this reaction chamber (53), this exocoel (54) is surrounded by reactor base plate (23), reactor outer wall (541), reaction chamber sidewall (531), gas channel upper cover (10) and enclosing cover (9), between this exocoel (54) and described reaction chamber (53) by the gap between described reaction chamber sidewall (531) and reactor base plate (23) or and gas channel upper cover (10) between gap and keep gas communication between this reaction chamber (53).
3. according to the equipment of claim 2, wherein said heating chamber (51) inside has at least three Limit Bearings (22), and the outer rim of each in these at least three Limit Bearings (22) and the inner side of described heating chamber sidewall (14) are smooth tangent.
4. according to the equipment of claim 1, wherein said quill shaft (7) passes the outside of reactor body (2) downwards, and described quill shaft (7) has transmitting gear (8) on this outer portion part.
5. according to the equipment of claim 1, the hollow inside of wherein said quill shaft (7) has interior axle (7-3), and this interior axle and this quill shaft coaxial line arrange, and this interior axle is for driving central gear (16) rotation that is positioned at this shaft end.
6. according to the equipment of claim 1, in wherein said circular groove (12), be placed with substrate pallet (17), this substrate pallet (17) is for supporting the substrate of waiting to be carried out chemical vapor deposition process, the outer rim of this substrate pallet (17) has gear, and this gear is meshed with described central gear (16).
7. according to the equipment of claim 1, the air channel (152) that there is seal groove (151) on the ring flange of wherein said ventilation flange (15), is surrounded by described seal groove and the some ventilating pits (153) that are positioned at air channel.
8. according to the equipment of claim 7, wherein said seal groove (151) and air channel (152) evenly arrange at least two sections on the ring flange of described ventilation flange (15), between each section, independent of one another and each section is all positioned at axis take described ventilation flange (15) on the same circular rail trace in the center of circle, and decoration form is positioned on its axis the center of gravity of described ventilation flange (15).
9. the equipment of claim 8, described at least two sections is 4 sections, 6 sections or multistage more.
10. the equipment of claim 7, wherein said seal groove (151) and described air channel (152) are placed towards described reactor base plate (23), and the sole (141) of the planar side of described ventilation flange (15) and described heating chamber sidewall (14) bottom fits tightly.
11. the equipment of claim 7, wherein said reactor base plate (23) is provided with base plate ventilating pit (231), and this base plate ventilating pit (231) one end is communicated with described air channel (152), and the other end is communicated with protection gas inlet pipe (18).
The equipment of 12. claims 7, each in wherein said air channel (152) has at least one row and becomes with respect to the axis of described ventilation flange (15) ventilating pit (153) of circle-shaped distribution.
The equipment of 13. claims 1, wherein passes described reactor base plate (23) at described quill shaft (7) and locates to provide the first magnetic current sealing device (6-1).
The equipment of 14. claims 1, wherein there is U-shaped communicating pipe (21) in the outer setting of described reactor body (2), one end opening is communicated with described heating chamber (51), and its other end opening is communicated with described reaction chamber (53), and this U-shaped communicating pipe (21) is provided with valve (19).
The equipment of 15. claims 5, wherein said interior axle (7-3) passes the bottom of described quill shaft (7) and is fixed on disk (24) upper, and this interior axle (7-3) can rotate maybe and can not rotate.
The equipment of 16. claims 5, is wherein provided with the second magnetic current sealing device (6-2) in the bottom part that described interior axle (7-3) passes described quill shaft (7).
The equipment of 17. claims 1, wherein said quill shaft (7) comprises epimere quill shaft (7-1) and hypomere quill shaft (7-2), connects, with energy transmitting torque between the two with screw thread or key.
The equipment of 18. claims 17, the thermotolerance that wherein forms the material of epimere quill shaft (7-1) is eager to excel than the thermotolerance of the material that forms hypomere quill shaft (7-2).
The equipment of 19. claims 1, wherein said well heater (13) surface is not coated with matcoveredn.
The equipment of 20. claims 1, wherein said well heater sidewall (14) comprises sole (141), the first vertical wall (142), extends out circular table (143) and the second vertical wall (144), after wherein extending out a segment distance by the top of the first vertical wall (142), continue upwards to extend a segment distance, described in forming, extend out circular table (143) and the described second vertical wall (144), this extends out circular table for supporting described well heater top cover (11).
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| CN201410093122.XA CN103834931B (en) | 2014-03-13 | 2014-03-13 | Equipment for carrying out chemical vapor deposition process |
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| CN201410093122.XA CN103834931B (en) | 2014-03-13 | 2014-03-13 | Equipment for carrying out chemical vapor deposition process |
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| CN103834931B CN103834931B (en) | 2017-01-11 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108796473A (en) * | 2018-06-26 | 2018-11-13 | 重庆理工大学 | A kind of thermal decomposition preparation method of film |
| CN111996512A (en) * | 2020-09-30 | 2020-11-27 | 常州艾恩希纳米镀膜科技有限公司 | Aluminum reactor for CVD coating equipment |
| CN113529056A (en) * | 2021-07-16 | 2021-10-22 | 中科微光子科技(成都)有限公司 | Automatic equipment for preparing passive device and preparation method |
| CN118374794A (en) * | 2024-06-26 | 2024-07-23 | 新美光(苏州)半导体科技有限公司 | Substrate heating body assembly and chemical vapor deposition equipment |
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| JP2005311161A (en) * | 2004-04-23 | 2005-11-04 | Mitsubishi Heavy Ind Ltd | Thin-film manufacturing apparatus and manufacturing method |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN103140602A (en) * | 2010-08-02 | 2013-06-05 | 威科仪器有限公司 | Exhaust for cvd reactor |
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| US5062386A (en) * | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
| JP2005311161A (en) * | 2004-04-23 | 2005-11-04 | Mitsubishi Heavy Ind Ltd | Thin-film manufacturing apparatus and manufacturing method |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
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| CN108796473A (en) * | 2018-06-26 | 2018-11-13 | 重庆理工大学 | A kind of thermal decomposition preparation method of film |
| CN108796473B (en) * | 2018-06-26 | 2020-03-31 | 重庆理工大学 | Thermal decomposition preparation method of film |
| CN111996512A (en) * | 2020-09-30 | 2020-11-27 | 常州艾恩希纳米镀膜科技有限公司 | Aluminum reactor for CVD coating equipment |
| CN113529056A (en) * | 2021-07-16 | 2021-10-22 | 中科微光子科技(成都)有限公司 | Automatic equipment for preparing passive device and preparation method |
| CN118374794A (en) * | 2024-06-26 | 2024-07-23 | 新美光(苏州)半导体科技有限公司 | Substrate heating body assembly and chemical vapor deposition equipment |
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| Publication number | Publication date |
|---|---|
| CN103834931B (en) | 2017-01-11 |
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Effective date of registration: 20161208 Address after: 017000 the Inner Mongolia Autonomous Region city Ordos Hangjinqi Zhen He Xi Jie Bei Di Shui Xiao Qu Applicant after: Inner Mongolia Huayan Xinguang Technology Co., Ltd. Address before: 100176 Beijing city Hondar Daxing District economic and Technological Development Zone No. 12 North Road, room A813 Applicant before: China (Beijing) Technology Co., Ltd. |
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