CN201947524U - Large-area high-power microwave plasma annular microwave chamber and device with same - Google Patents
Large-area high-power microwave plasma annular microwave chamber and device with same Download PDFInfo
- Publication number
- CN201947524U CN201947524U CN2011200807474U CN201120080747U CN201947524U CN 201947524 U CN201947524 U CN 201947524U CN 2011200807474 U CN2011200807474 U CN 2011200807474U CN 201120080747 U CN201120080747 U CN 201120080747U CN 201947524 U CN201947524 U CN 201947524U
- Authority
- CN
- China
- Prior art keywords
- microwave
- large tracts
- high power
- vacuum
- ring resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000000740 bleeding effect Effects 0.000 claims description 7
- 239000003112 inhibitor Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010432 diamond Substances 0.000 abstract description 7
- 229910003460 diamond Inorganic materials 0.000 abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 abstract 4
- 239000000463 material Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Images
Landscapes
- Plasma Technology (AREA)
Abstract
The utility model discloses a large-area high-power microwave plasma annular microwave chamber and a device with the same. The large-area high-power microwave plasma annular microwave chamber essentially comprises an annular resonant cavity (1) with two sealed ends and a substrate holder (6) arranged in the annular resonant cavity (1) with two sealed ends. An air inlet (2) and an air outlet (3) are arranged on the annular resonant cavity (1) with two sealed ends. A lower end and an upper end of the annular resonant cavity (1) with two sealed ends are connected with a coaxial coupler (4)and a microwave suppressor (5) respectively, and one end of the coaxial coupler (4) extends to the outside of the annular resonant cavity (1) with two sealed ends. The large-area high-power microwave plasma annular microwave chamber and the device with the same can be used for chemical vapor depositions of large-area high-power microwave plasmas and preparing large-area high-quality diamond thick films.
Description
Technical field
The utility model relates to microwave energy technology, microwave plasma body technique, specifically refers to the large tracts of land high power microwave plasma annular microwave cavity that a kind of chemistry combines with the material gas phase deposition technology and the device of formation thereof.
Background technology
Existing microwave cavity and device are the plasma CVD devices that adopts quartz clock bell-type cavity and medium and small microwave power, and it adopts antenna coupled structure mode, and its major defect is as follows:
1, it is less to apply microwave power, only is fit to and the following microwave power of 5kW usually;
2, the microwave antenna coupling efficiency is lower, and controllability is also relatively poor;
3, the sample stage area is less in the cavity, and general diameter is less than 200mm, and substrate diameter is at Φ 80mm diameter range;
4, the speed of preparation diamond is slower, and its growth rate has only below the 1 μ m/h during preparation diamond film, and the depositing diamond film is thinner, low, the consuming time length of efficient, and quality is wayward.
The utility model content
The purpose of this utility model is to overcome the shortcoming and defect of above-mentioned prior art, a kind of be used for large tracts of land, high power microwave plasma chemical vapour deposition (CVD) are provided, preparation large tracts of land high quality diamond thick film, the device of multiduty annular microwave cavity and formation thereof.
The purpose of this utility model is achieved through the following technical solutions: large tracts of land high power microwave plasma annular microwave cavity, mainly ring resonator that is all sealed by two ends and the substrate holder that is arranged on ring resonator inside constitute, described ring resonator is provided with air inlet and bleeding point, the top and bottom of ring resonator are connected with coaxial coupler and microwave inhibitor respectively, and an end of coaxial coupler extends to the outside of ring resonator.
The top and bottom of above-mentioned ring resonator seal by chamber lid and vacuum-tight window respectively, and described coaxial coupler is through vacuum-tight window, and the microwave inhibitor is connected the chamber and covers, and air inlet is arranged on the chamber and covers.
Above-mentioned ring resonator also is provided with observation window; This observation window number is several, and preferentially is chosen as four, and is symmetricly set on the sidewall of ring resonator, and height is suitable with substrate on the substrate holder, in the actual use, records the temperature of substrate by use infrared temperature measurement apparatus at observation window.
Based on the device that above-mentioned large tracts of land high power microwave plasma annular microwave cavity constitutes, comprise above-mentioned large tracts of land high power microwave plasma annular microwave cavity, and coupled respectively microwave source, gas supply device and air extractor.
Above-mentioned microwave source links to each other with large tracts of land high power microwave plasma annular microwave cavity by the microwave waveguide transmitting device, and described microwave waveguide transmitting device mainly is made of three end circulators, the water load that links to each other with three end circulators the 3rd end, the pin tuner, the waveguide segment that links to each other with the pin tuner that link to each other with three end circulator outputs and the mode converter that links to each other with waveguide segment; Described mode converter links to each other with the lower end of coaxial coupler.
The above-mentioned gas feedway mainly is made of gas source, this gas source links to each other by the air inlet of admission line with large tracts of land high power microwave plasma annular microwave cavity, admission line is provided with air intake valve, is provided with the gas flow control system between gas source and the admission line; Air intake valve is used for control and whether charges into reacting gas in ring resonator, and the gas flow control system is made of several gas mass flow amount controller, and its quantity can design voluntarily according to actual conditions.
Above-mentioned air extractor mainly is made of molecular pump and vacuum pump, and described molecular pump links to each other by the bleeding point of pump-line with large tracts of land high power microwave plasma annular microwave cavity with vacuum pump, and pump-line is provided with vacuum valve and vacuum measurement and control instrument.
This device also comprises the inner workbench of hollow structure that is, described large tracts of land high power microwave plasma annular microwave cavity is placed on the upper surface of workbench, gas supply device and air extractor all are arranged on the inside of workbench, thereby make whole apparatus structure compact more, taking up space when having reduced to use.
Further, this device also comprises the master control cabinet that all links to each other with large tracts of land high power microwave plasma annular microwave cavity, microwave source, gas supply device and air extractor, described master control is provided with master control screen, vacuum power supply, gas flow control power supply, molecular pump power source, vacuum-pump power supply cashier's office in a shop, and general supply; The master control cabinet adopts the chain control mode of computer intelligence, makes each parameter value all can control and show that simple to operate, automaticity improves greatly by main panel.
In sum, the utlity model has following advantage:
(1) the utility model compared with prior art, design principle is more advanced rationally, the microwave power height that can apply, can to produce even high-density plasma region area big, and strong material preparation, processed ability are arranged; The belt microwave cavity of axle coupling simultaneously can make plasma not contact fully with annular quartz window, thereby the electrodless discharge plasma density and the cleanliness factor that obtain are high.Compare when the preparation membrane material with traditional structure, its growth area and growth rate improve greatly;
(2) the utility model adopts 10kW ~ 75kW high-power microwave source, compares with the following microwave power of traditional 5kW, and it provides powerful microwave energy for annular chamber, is the essential condition of rapid processing large tracts of land, High Quality Diamond Films;
(3) the utility model can be guaranteed the good isolation of reflected wave to magnetron, make it steady operation, can when changing, plasma load can regulate optimum Match easily again, reach the best transmission of microwave power, and, show reflection power size and real-time working state with numeral by the reflected wave sampling;
(4) the utility model can guarantee material in pure environment owing to adopt molecular pump and no innage vacuum pump composite set, realize the film growth and handle at a high speed, high cleanliness and high controllability;
(5) the utility model guarantees gas diversity and stability owing to adopted multichannel reacting gas mass flow control appts;
(6) the utility model guarantees heat conduction and electric conductivity that it is good owing to adopt double-deck red copper water-cooling structure.Its area has significantly than existing apparatus to be increased, and diameter can reach φ 500mm, places sizes of substrate and can reach φ 250mm;
(7) the utility model is owing to adopt the chain control mode of computer intelligence, makes each parameter value all can control and show that simple to operate, automaticity improves greatly by main panel.
Description of drawings
Fig. 1 is the structural representation of large tracts of land high power microwave plasma annular microwave cavity;
Fig. 2 is the structural representation one based on the device of large tracts of land high power microwave plasma annular microwave cavity formation;
Fig. 3 is the structural representation two based on the device of large tracts of land high power microwave plasma annular microwave cavity formation;
Mark and corresponding parts title in the accompanying drawing: 1-ring resonator; 2-air inlet; 3-bleeding point; 4-coaxial coupler; 5-microwave inhibitor; 6-substrate holder; 7-gas source; 8-chamber lid; 9-vacuum-tight window; 10-observation window; 11-microwave source; 12-three end circulators; 13-water load; 14-pin tuner; 15-waveguide segment; 16-mode converter; 17-gas flow control system; 18-admission line; 19-air intake valve; 20-vacuum pump; 21-pump-line; 22-vacuum valve; 23-vacuum measurement and control instrument; 24-workbench; 25-master control cabinet; 26-master control screen; 27-vacuum power supply; 28-gas flow control power supply; 29-vacuum-pump power supply; 30-general supply; 31-molecular pump; 32-molecular pump power source; 33-substrate; 34-infrared temperature measurement apparatus.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited only to this.
Embodiment:
The disclosed large tracts of land high power microwave plasma annular of the utility model microwave cavity as shown in Figure 1, ring resonator 1 that it is mainly all sealed by two ends and the substrate holder 6 that is arranged on ring resonator 1 inside constitute, described ring resonator 1 is provided with air inlet 2 and bleeding point 3, the top and bottom of ring resonator 1 are connected with coaxial coupler 4 and microwave inhibitor 5 respectively, and an end of coaxial coupler 4 extends to the outside of ring resonator 1; In actual use, at first the gas in the ring resonator 1 is extracted out and reached vacuum state by bleeding point 3, charge into the gas that carries out gas-phase reaction by air inlet 2 to ring resonator 1 inside then, coaxial coupler 4 is used for substrate temperature is monitored.
Further, by chamber lid 8 and vacuum-tight window 9 sealings, described coaxial coupler 4 is through vacuum-tight window 9 respectively in the top and bottom of described ring resonator 1, and microwave inhibitor 5 is connected on the chamber lid 8, and air inlet 2 preferentially is arranged on the chamber lid 8.
Described ring resonator 1 also is provided with two observation windows 10, and two observation windows 10 are symmetricly set on the sidewall of ring resonator 1, height is suitable with substrate 33 on the substrate holder 6, in the actual use, records the temperature of substrate 33 by use infrared temperature measurement apparatus 34 at observation window.
The device that constitutes based on above-mentioned large tracts of land high power microwave plasma annular microwave cavity is shown in Fig. 2 and 3, it comprises above-mentioned large tracts of land high power microwave plasma annular microwave cavity, and coupled respectively microwave source 11, gas supply device and air extractor.
Described gas supply device mainly is made of gas source 7, described gas source 7 links to each other by the air inlet 2 of admission line 18 with large tracts of land high power microwave plasma annular microwave cavity, and admission line 18 is provided with air intake valve 19, is provided with gas flow control system 17 between gas source 7 and the admission line 18.
Air extractor mainly is made of molecular pump 31 and vacuum pump 20, described molecular pump 31 links to each other by the bleeding point 3 of pump-line 21 with large tracts of land high power microwave plasma annular microwave cavity with vacuum pump 20, and pump-line 21 is provided with vacuum valve 22 and vacuum measurement and control instrument 23; Owing to adopt molecular pump 31 and vacuum pump composite set, thereby can guarantee material in pure environment, realize film growth and high-speed, high cleanliness of handling and high controllability.
Described large tracts of land high power microwave plasma annular microwave cavity is placed on the upper surface of workbench 24, and gas supply device and air extractor all are arranged on the inside of workbench 24; Thereby make whole apparatus structure compact more, taking up space when having reduced to use.
This device also comprises the master control cabinet 25 that all links to each other with large tracts of land high power microwave plasma annular microwave cavity, microwave source 11, gas supply device and air extractor, described master control cabinet 25 is provided with master control screen 26, vacuum power supply 27, gas flow control power supply 28, molecular pump power source 32, vacuum-pump power supply 29, and general supply 30.
The course of work of the present utility model is as follows:
Before the starting drive, at first substrate 33 is placed on the substrate holder 6 of ring resonator 1 inside; Be ready for the gas source of gas-phase reaction, and itself and gas flow control system 17 connected by pipeline, final be arranged on the air inlet 2 that builds on 8 in the chamber and be connected.
Starting drive general supply 30, the master control screen 26 of logical master control cabinet 25 shows each parameter value; Start vacuum-pump power supply 29, extract the gas in the ring resonator 1 out, meet the requirements of vacuum degree;
Start gas flow control power supply 28,, regulate air inflow and vacuum pumping speed, in ring resonator 1, meet the requirements of atmosphere to the required gas of ring resonator 1 supply response.
Each parameter value all can be controlled on master control screen 26 and be shown, after each parameter stability meets the technological requirement value, promptly begins substrate 33 surface diamond film deposition process.
As mentioned above, just can realize the utility model preferably.
Claims (10)
1. large tracts of land high power microwave plasma annular microwave cavity, it is characterized in that, the main ring resonator (1) that all seals by two ends and be arranged on the inner substrate holder (6) of ring resonator (1) and constitute, described ring resonator (1) is provided with air inlet (2) and bleeding point (3), the lower end of ring resonator (1) and upper end are connected with coaxial coupler (4) and microwave inhibitor (5) respectively, and an end of coaxial coupler (4) extends to the outside of ring resonator (1).
2. large tracts of land high power microwave plasma annular microwave cavity according to claim 1, it is characterized in that, the top and bottom of described ring resonator (1) are respectively by chamber lid (8) and vacuum-tight window (9) sealing, described coaxial coupler (4) is through vacuum-tight window (9), microwave inhibitor (5) is connected on the chamber lid (8), and air inlet (2) is arranged on the chamber lid (8).
3. large tracts of land high power microwave plasma annular microwave cavity according to claim 1 and 2 is characterized in that described ring resonator (1) also is provided with observation window (10).
4. large tracts of land high power microwave plasma annular microwave cavity according to claim 3 is characterized in that described observation window (10) number is several, and is symmetricly set on the sidewall of ring resonator (1).
5. the device that constitutes based on above-mentioned large tracts of land high power microwave plasma annular microwave cavity, it is characterized in that, comprise above-mentioned large tracts of land high power microwave plasma annular microwave cavity, and coupled respectively microwave source (11), gas supply device and air extractor.
6. device according to claim 5, it is characterized in that, described microwave source (11) links to each other by microwave waveguide transmitting device and large tracts of land high power microwave plasma annular microwave cavity, and described microwave waveguide transmitting device is mainly by three end circulators (12), the water load (13) that links to each other with three end circulators (12) the 3rd end, the pin tuner (14), the waveguide segment (15) that links to each other with pin tuner (14) that link to each other with three end circulator (12) outputs and mode converter (16) formation that links to each other with waveguide segment (15); Described mode converter (6) links to each other with the lower end of coaxial coupler (4).
7. device according to claim 5, it is characterized in that, described gas supply device mainly is made of gas source (7), described gas source (7) links to each other by the air inlet (2) of admission line (18) with large tracts of land high power microwave plasma annular microwave cavity, and admission line (18) is provided with air intake valve (19), is provided with gas flow control system (17) between gas source (7) and the admission line (18).
8. device according to claim 5, it is characterized in that, described air extractor mainly is made of molecular pump (31) and vacuum pump (20), described molecular pump (31) links to each other by the bleeding point (3) of pump-line (21) with large tracts of land high power microwave plasma annular microwave cavity with vacuum pump (20), and pump-line (21) is provided with vacuum valve (22) and vacuum measurement and control instrument (23).
9. according to each described device in the claim 5～8, it is characterized in that, also comprise the inner workbench of hollow structure (24) that is, described large tracts of land high power microwave plasma annular microwave cavity is placed on the upper surface of workbench (24), and gas supply device and air extractor all are arranged on the inside of workbench (24).
10. according to each described device in the claim 5～8, it is characterized in that, also comprise the master control cabinet (25) that all links to each other with large tracts of land high power microwave plasma annular microwave cavity, microwave source (11), gas supply device and air extractor, described master control cabinet (25) is provided with master control screen (26), vacuum power supply (27), gas flow control power supply (28), molecular pump power source (32), vacuum-pump power supply (29), and general supply (30).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200807474U CN201947524U (en) | 2011-03-24 | 2011-03-24 | Large-area high-power microwave plasma annular microwave chamber and device with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200807474U CN201947524U (en) | 2011-03-24 | 2011-03-24 | Large-area high-power microwave plasma annular microwave chamber and device with same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201947524U true CN201947524U (en) | 2011-08-24 |
Family
ID=44474858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200807474U Expired - Lifetime CN201947524U (en) | 2011-03-24 | 2011-03-24 | Large-area high-power microwave plasma annular microwave chamber and device with same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201947524U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103741112A (en) * | 2013-12-31 | 2014-04-23 | 武汉工程大学 | Microwave plasma device for preparing large-area solar battery piece silicon film |
| CN105239057A (en) * | 2015-11-06 | 2016-01-13 | 武汉理工大学 | Microwave plasma chemical vapor deposition device |
| CN110672942A (en) * | 2019-09-25 | 2020-01-10 | 武汉滨湖电子有限责任公司 | High-power test device and test method for amplitude limiting field amplifier plug-in |
| CN114381718A (en) * | 2022-01-20 | 2022-04-22 | 成都纽曼和瑞微波技术有限公司 | Microwave plasma chemical vapor deposition equipment |
-
2011
- 2011-03-24 CN CN2011200807474U patent/CN201947524U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103741112A (en) * | 2013-12-31 | 2014-04-23 | 武汉工程大学 | Microwave plasma device for preparing large-area solar battery piece silicon film |
| CN105239057A (en) * | 2015-11-06 | 2016-01-13 | 武汉理工大学 | Microwave plasma chemical vapor deposition device |
| CN105239057B (en) * | 2015-11-06 | 2018-05-01 | 武汉理工大学 | Microwave plasma CVD device |
| CN110672942A (en) * | 2019-09-25 | 2020-01-10 | 武汉滨湖电子有限责任公司 | High-power test device and test method for amplitude limiting field amplifier plug-in |
| CN110672942B (en) * | 2019-09-25 | 2021-10-22 | 武汉滨湖电子有限责任公司 | High-power test device and test method for amplitude limiting field amplifier plug-in |
| CN114381718A (en) * | 2022-01-20 | 2022-04-22 | 成都纽曼和瑞微波技术有限公司 | Microwave plasma chemical vapor deposition equipment |
| CN114381718B (en) * | 2022-01-20 | 2024-03-26 | 成都纽曼和瑞微波技术有限公司 | Microwave plasma chemical vapor deposition equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201947524U (en) | Large-area high-power microwave plasma annular microwave chamber and device with same | |
| CN103489967B (en) | The preparation method of a kind of gallium oxide epitaxial film and gallium oxide epitaxial film | |
| CN104726850A (en) | Microwave-plasma chemical vapor deposition equipment | |
| CN101158034A (en) | Device for rapid large-area preparation of thin film material and setting method | |
| CN108275716B (en) | CsPbBr3Preparation method of perovskite three-dimensional cubic microcavity sample | |
| CN115896933A (en) | Large-size diamond, MPCVD device and large-size diamond preparation method | |
| CN201862286U (en) | Intelligent multi-temperate zone vacuum sublimation purification device for organic material | |
| CN109778138A (en) | A kind of microwave plasma diamond film deposition device | |
| CN209522920U (en) | Microwave plasma CVD device | |
| CN107144130A (en) | A kind of negative electrode visualization microwave sintering apparatus | |
| CN102169810B (en) | Laser processing apparatus using vacuum cavity and processing method thereof | |
| CN102533293B (en) | Device for preparing biochar by adopting wet process | |
| CN208545490U (en) | A kind of resonant cavity for chemistry for gas phase depositing diamond film | |
| CN208721594U (en) | A kind of material secondary electron emission characteristic measurement sample pretreatment apparatus | |
| CN220746073U (en) | MPCVD device for depositing diamond | |
| CN108588821A (en) | Microwave plasma CVD device and leak source detection method | |
| CN117488284A (en) | Vertical coupling type diamond film deposition equipment | |
| US11445580B2 (en) | Microwave-based high-throughput material processing device with concentric rotary chassis | |
| CN111398708B (en) | Electromagnetic material comprehensive test microwave heating equipment and method | |
| CN220537909U (en) | Microwave plasma deposition diamond device | |
| CN102899638B (en) | Gas spray header device for photo-assisted metal organic chemical vapor deposition | |
| CN210537010U (en) | Surface wave plasma generating device | |
| CN105170058A (en) | Microwave plasma reaction device for quick material preparation | |
| CN109250708B (en) | System for optical microwave reduction of graphene oxide | |
| CN202543325U (en) | Gas-inlet distribution device of chemical vapor deposition furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200903 Address after: No.192, Huaguan Road, economic city, Longtan headquarters, Chenghua District, Chengdu, Sichuan 610000 Patentee after: CHENGDU NEOMAN-HUERAY MICROWAVE TECHNOLOGY Co.,Ltd. Address before: 610000, No. 1, building 1, building 27, 5, East Hospital, two section, Jianshe North Road, Chenghua District, Sichuan, Chengdu, Co-patentee before: Ji Yu Patentee before: Ji Tianren Co-patentee before: Diao Yu |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110824 |
|
| CX01 | Expiry of patent term |