CN114775045A - Valve heat-proof device and epitaxial furnace of epitaxial furnace - Google Patents
Valve heat-proof device and epitaxial furnace of epitaxial furnace Download PDFInfo
- Publication number
- CN114775045A CN114775045A CN202210438710.7A CN202210438710A CN114775045A CN 114775045 A CN114775045 A CN 114775045A CN 202210438710 A CN202210438710 A CN 202210438710A CN 114775045 A CN114775045 A CN 114775045A
- Authority
- CN
- China
- Prior art keywords
- flange
- reaction chamber
- valve
- epitaxial furnace
- transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of epitaxial growth, and particularly relates to a valve heat-insulating device of an epitaxial furnace and the epitaxial furnace, wherein the valve heat-insulating device of the epitaxial furnace comprises: the flange is used for connecting a reaction chamber of the epitaxial furnace and a transmission valve of the epitaxial furnace, and a transmission port for feeding materials on the substrate is formed in the flange; the device still includes: the heat insulation baffle is movably arranged on one side of the flange close to the reaction chamber; the driving mechanism is arranged on the flange, is connected with the heat insulation baffle and is used for driving the heat insulation baffle to move according to the running state of the reaction chamber so as to shield or open the transmission port; the device can utilize actuating mechanism drive thermal-insulated baffle motion in order to shelter from or open the transmission mouth on the flange between transmission valve and the reaction chamber according to the running state of reaction chamber to reduce the temperature rise of transmission valve, effectively avoided the valve plate of transmission valve because of high temperature loss life, and effectively reduce the influence of high temperature in the reaction chamber to the transmission indoor temperature.
Description
Technical Field
The invention belongs to the technical field of epitaxial growth, and particularly relates to a valve heat insulation device of an epitaxial furnace and the epitaxial furnace.
Background
The epitaxial furnace is generally provided with a reaction chamber and a transmission chamber for feeding and discharging materials to and from the reaction chamber, and the reaction chamber and the transmission chamber are connected by a transmission valve and a flange; in the epitaxial reaction process of the silicon carbide, the reaction chamber generally works at a high temperature of about 1500-1700 ℃, and the transmission chamber generally works at normal temperature; all parts in the transmission chamber do not all possess high temperature resistant characteristic, so need set up flange and transmission valve between reacting chamber and transmission chamber in order to keep apart the high temperature transmission of reacting chamber to the transmission chamber in, wherein, the flange generally designs into water-cooling flange with the interior high temperature of separation reacting chamber, nevertheless in order to go up unloading operation to the reacting chamber through the transmission chamber, need design the transmission mouth of unloading usefulness on the flange, the transmission valve is connected with the transmission mouth for change the communicating state of transmission mouth and transmission chamber. However, when the transfer valve blocks the communication state between the transfer port and the transfer chamber, high-temperature radiation in the reaction chamber can irradiate on the valve plate of the transfer valve through the transfer port, and the transfer valve is easily ablated by the high-temperature radiation after long-time use, so that the service life of the transfer valve is shortened, and even the sealing failure of the transfer valve is caused.
Accordingly, the prior art is in need of improvement and development.
Disclosure of Invention
An object of the application is to provide a valve heat-proof device and epitaxial furnace of epitaxial furnace, can avoid when epitaxial growth in the reacting chamber high temperature act on the transfer valve and damage the transfer valve.
In a first aspect, the present application provides a valve heat-proof device of epitaxial furnace, which is installed on the outlet end of the reaction chamber of the epitaxial furnace, the device comprises:
the flange is used for connecting the reaction chamber and a transmission valve of the epitaxial furnace, and a transmission port for feeding materials on the substrate is formed in the flange;
the device further comprises:
the heat insulation baffle is movably arranged on one side of the flange close to the reaction chamber;
and the driving mechanism is arranged on the flange, is connected with the heat insulation baffle and is used for driving the heat insulation baffle to move so as to shield or open the transmission port according to the operating state of the reaction chamber.
The utility model provides a valve heat-proof device of epitaxial furnace can utilize actuating mechanism drive heat shield to move in order to shelter from or open the transmission mouth on the flange according to the running state of reacting chamber for the transmission mouth is when sheltered from, has the thermal-insulated subassembly that heat shield and flange both formed between transmission valve and the reacting chamber, has reduced the temperature rise of transmission valve, thereby has effectively avoided the valve plate of transmission valve because of high temperature loss life.
The valve heat insulation device of the epitaxial furnace, wherein the driving mechanism comprises:
the driving motor is fixed on the flange;
and two ends of the eccentric assembly are respectively connected with the driving motor and the heat insulation baffle, and the eccentric assembly is driven by the driving motor to rotate eccentrically so as to drive the heat insulation baffle to shield or open the transmission port.
In the valve heat-insulating device of the epitaxial furnace, when the reaction chamber enters a reaction state, the driving motor is started to enable the eccentric component to rotate eccentrically so as to change the position of the heat-insulating baffle plate, so that the heat-insulating baffle plate shields the transmission port to shield the transmission port; when the reaction chamber transfers the substrate, the driving motor is started to make the eccentric component eccentrically rotate so as to change the position of the heat insulation baffle plate, so that the heat insulation baffle plate opens the transfer port.
The valve heat insulation device of the epitaxial furnace is characterized in that the heat insulation baffle is provided with a hanging hole, and the hanging hole is movably connected with one end of the eccentric assembly.
The valve heat insulation device of the epitaxial furnace is characterized in that the flange is provided with a water cooling cavity, and the water cooling cavity is connected with a water inlet used for inputting cooling water and a water outlet used for outputting the cooling water.
In the valve heat insulation device of the epitaxial furnace, the water cooling cavity is used for introducing cooling water to cool the flange and is used as a cooling device between the reaction chamber and the transmission chamber, so that the temperature in the reaction chamber is prevented from being transferred to the transmission valve through the flange in a contact heat transfer mode.
The valve heat-insulating device of epitaxial furnace, wherein, one side that thermal baffle deviates from the flange is equipped with the mirror layer.
In the valve heat-insulating device of epitaxial furnace of this example, set up the mirror layer on the thermal-insulated baffle and can reflect back the reaction chamber towards the heat radiation that transmission valve produced in the reaction chamber, effectively avoid heat radiation to cause the intensification to the transmission valve.
The valve heat insulation device of the epitaxial furnace is characterized in that the heat insulation baffle is provided with a shielding panel for shielding the transmission port and a transmission port for communicating the transmission port.
In a second aspect, the present application further provides an epitaxial furnace, comprising:
a reaction chamber for performing epitaxial growth;
the transmission valve is connected with the reaction chamber through a flange and is used for connecting the reaction chamber and the transmission chamber of the epitaxial furnace;
the flange is provided with a transmission port for feeding materials on the substrate;
the epitaxial furnace further comprises:
the heat insulation baffle is movably arranged on one side of the flange close to the reaction chamber;
and the driving mechanism is arranged on the flange, is connected with the heat insulation baffle and is used for driving the heat insulation baffle to move so as to shield or open the transmission port according to the operating state of the reaction chamber.
The epitaxial furnace can drive the heat insulation baffle to move by using the driving mechanism according to the running state of the reaction chamber so as to shield or open the transmission port on the flange between the transmission valve and the reaction chamber; when the transmission port is shielded, the high temperature originally directly acting on the transmission valve in the reaction chamber acts on the heat insulation baffle plate, and the temperature rise of the transmission valve is reduced.
The epitaxial furnace is characterized in that a flange groove is formed in the outlet end of the reaction chamber, a boss is arranged on one side, facing the flange groove, of the flange, and the side face of the boss is matched with the flange groove.
The epitaxial furnace of the example utilizes the mutual matching of the flange groove and the boss to carry out the positioning connection of the reaction chamber and the flange, ensures that the reaction cavity of the reaction chamber can be right opposite to the transmission port, seals the connection part between the reaction chamber and the transmission port and prevents gas and temperature leakage.
The epitaxial furnace is characterized in that the heat insulation baffle is arranged in the flange groove, and when the heat insulation baffle moves to the highest position and/or the lowest position under the driving of the driving mechanism, at least two corner ends are in contact with the side wall of the flange groove.
The epitaxial furnace, wherein the corner ends of the heat insulation baffle are rounded.
In the epitaxial furnace of the example, the corner end of the heat insulation baffle adopts a rounding design, so that stress concentration can be effectively avoided, and the heat insulation baffle is prevented from being cracked due to cold and hot alternation.
By last knowing, the application provides a valve heat-proof device and epitaxial furnace of epitaxial furnace, wherein, the valve heat-proof device of epitaxial furnace can utilize the motion of actuating mechanism drive heat insulating barrier in order to shelter from or open the transmission mouth on the flange between transmission valve and the reacting chamber according to the running state of reacting chamber to reduce the temperature rise of transmission valve, effectively avoided the valve plate of transmission valve because of high temperature loss life, and effectively reduce the influence of high temperature in the reacting chamber to the transmission indoor temperature.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial furnace according to an embodiment of the present disclosure after a reaction chamber is hidden.
Fig. 2 is a schematic structural diagram of a valve heat insulation device of an epitaxial furnace provided in an embodiment of the present application when a heat insulation baffle blocks a transfer port.
Fig. 3 is a schematic structural diagram of a valve heat insulation device of an epitaxial furnace provided in an embodiment of the present application when a heat insulation baffle opens a transfer port.
Fig. 4 is a schematic structural diagram of a water cooling cavity in a flange of a valve heat insulation device of an epitaxial furnace according to an embodiment of the present application.
Fig. 5 is an exploded view of an epitaxial furnace according to an embodiment of the present application.
FIG. 6 is a schematic view of the epitaxial furnace after the reaction chamber is hidden when the eccentric assembly is an eccentric link.
FIG. 7 is a schematic view of the thermal shield of the valve thermal shield apparatus shielding the transfer port when the eccentric assembly is an eccentric link.
FIG. 8 is a schematic view of the thermal barrier of the valve thermal shield apparatus opening the transfer port when the eccentric assembly is an eccentric link.
Description of reference numerals: 1. a reaction chamber; 2. a flange; 3. a transfer valve; 5. a heat insulation baffle; 11. a flange groove; 21. a transfer port; 22. a water-cooled cavity; 23. a water inlet; 24. a water outlet; 25. a boss; 26. a bump; 41. a drive motor; 42. an eccentric assembly; 51. hanging holes; 52. a delivery port; 53. a shielding panel; 421. an active eccentric rod; 422. driven eccentric rod.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically, electrically or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
The embodiment of the application provides a valve heat-proof device and epitaxial furnace of epitaxial furnace mainly use in vapour phase chemical deposition's epitaxial equipment, is particularly useful for horizontal epitaxial furnace, and horizontal epitaxial furnace has the reaction chamber of level setting, and the substrate is arranged the reaction intracavity and is lasted the rotation and make reaction gas reaction back uniform deposition form the crystal on the substrate in the reaction.
The epitaxial furnace of the vapor phase chemical deposition reaction needs a higher process temperature for crystal growth, for example, the process temperature of the reaction chamber of the silicon carbide (SiC) epitaxial furnace is about 1500-1700 ℃, which has a large difference from the room temperature, and under normal use conditions, the high temperature in the reaction chamber of the reaction chamber 1 can be transferred to the transfer valve 3 connected with the reaction chamber 1 and the transfer chamber, thereby losing the service life of the transfer valve 3.
In a first aspect, as shown in fig. 1 to 4, the present embodiment provides a valve heat insulation device for an epitaxial furnace, which is installed on an outlet end of a reaction chamber 1 of the epitaxial furnace, and comprises:
the flange 2 is used for connecting the reaction chamber 1 and a transmission valve 3 of the epitaxial furnace, and a transmission port 21 for feeding materials on the substrate is formed in the flange 2;
the device also includes:
the heat insulation baffle 5 is movably arranged on one side of the flange 2 close to the reaction chamber 1;
and the driving mechanism is arranged on the flange 2 and connected with the heat insulation baffle plate 5 and is used for driving the heat insulation baffle plate 5 to move so as to shield or open the transmission port 21 according to the operating state of the reaction chamber 1.
Specifically, the valve heat insulation device of the epitaxial furnace in the embodiment of the application is installed between a reaction chamber 1 and a transmission chamber of the epitaxial furnace to serve as a connecting member of the reaction chamber 1 and the transmission chamber, and a feeding and discharging manipulator is arranged in the transmission chamber and used for moving a substrate to perform feeding and discharging operations on the reaction chamber 1; the transfer valve 3 is disposed between the transfer chamber and the valve heat insulation device of the epitaxial furnace of the embodiment of the present application, and is used for closing a passage between the reaction chamber 1 and the transfer chamber to seal the reaction chamber 1 when the reaction chamber 1 is subjected to a reaction.
More specifically, the loading and unloading robot performs loading and unloading operations of the reaction chamber 1 by extending into the transfer port 21.
More specifically, the operation state of the reaction chamber 1 includes a reaction state and a non-reaction state, when the reaction chamber 1 is in the reaction state, the transmission valve 3 is in the closed state, that is, the valve plate of the transmission valve 3 isolates the transmission port 21 and the transmission chamber, in order to prevent the valve plate of the transmission valve from being exposed to the high-temperature radiation of the reaction chamber 1 through the transmission port 21, at this time, the heat insulation baffle 5 shields the transmission port 21 under the driving of the driving mechanism, so as to prevent the high-temperature radiation of the reaction chamber 1 from directly irradiating on the valve plate of the transmission valve 3, and further prevent the valve plate of the transmission valve 3 from being ablated by the high-temperature radiation, thereby protecting the transmission valve 3; when reaction chamber 1 is in non-reaction state and utilizes manipulator in the transmission chamber to go on unloading operation to it, thermal baffle 5 switches on transmission mouth 21 under actuating mechanism's drive for transmission mouth 21 switches on with reaction chamber 1 inner space, and control transmission valve 3 simultaneously opens, makes reaction chamber 1 switch on so that go on unloading operation to reaction chamber 1 with the transmission chamber.
Specifically, the transfer valve 3 is opened only when the loading and unloading robot performs loading and unloading to communicate the transfer port 21 with the transfer chamber.
According to the valve heat insulation device of the epitaxial furnace, the heat insulation baffle 5 can be driven by the driving mechanism to move according to the running state of the reaction chamber 1 so as to shield or open the transmission port 21 on the flange 2, and when the transmission port 21 is shielded, a heat insulation assembly consisting of the heat insulation baffle 5 and the flange 2 is arranged between the transmission valve 3 and the reaction chamber 1; wherein, under thermal baffle 5's the effect of blockking, originally the heat of direct radiation on the 3 valve plates of transfer valve in the reaction chamber 1 is obstructed on thermal baffle 5, has reduced the temperature rise of 3 valve plates of transfer valve to the valve plate of effectively having avoided transfer valve 3 is because of high temperature ablation damage.
More specifically, the valve heat-proof device of epitaxial furnace of this application embodiment can effectively reduce the temperature rise of transmission valve 3, so can indirectly avoid the temperature rise of transmission room, also avoided the interior device of transmission room (like last feeding mechanical arm) to lose life because of the temperature rise, reduce the hardware maintenance cost of whole epitaxial furnace.
In some preferred embodiments, the drive mechanism comprises:
a drive motor 41 fixed to the flange 2;
and two ends of the eccentric component 42 are respectively connected with the driving motor 41 and the heat insulation baffle 5, and the eccentric component 42 is driven by the driving motor 41 to eccentrically rotate so as to drive the heat insulation baffle 5 to shield or open the transmission port 21.
Specifically, the thermal insulating barrier 5 blocks the transfer port 21 by blocking the transfer port 21 or inserting into the transfer port 21, and in the present embodiment, the thermal insulating barrier 5 preferably blocks the transfer port 21 to block the transfer port 21.
More specifically, the driving motor 41 is installed on the side of the flange 2 away from the reaction chamber 1, so as to avoid the loss of service life of the driving motor 41 due to the high temperature of the reaction chamber 1.
More specifically, the driving motor 41 is hermetically fixed to the flange 2, and gas in the reaction chamber 1 is prevented from leaking from a gap between the motor housing and the flange 2.
More specifically, the driving motor 41 is electrically connected to a controller (not shown) of the epitaxial furnace, the controller controls the driving motor 41 to operate according to the operating state of the reaction chamber 1 in the epitaxial furnace, and the controller is used for controlling the operation of each electrical component of the whole epitaxial furnace, such as controlling the energization of a heating coil outside the reaction chamber 1 to heat up the graphite layer in the reaction chamber 1; when the controller controls the reaction chamber 1 to enter a reaction state, the controller controls the driving motor 41 to start to enable the eccentric component 42 to eccentrically rotate so as to change the position of the heat insulation baffle plate 5, so that the heat insulation baffle plate 5 shields the transmission port 21 to shield the transmission port 21; when the controller controls the reaction chamber 1 to be out of the reaction state and loading and unloading are required, the controller controls the driving motor 41 to start to rotate the eccentric assembly 42 eccentrically so as to change the position of the heat insulation baffle 5, so that the heat insulation baffle 5 opens the transfer port 21.
In some other embodiments, the driving mechanism may further include a driver for driving the thermal shield 5 to linearly displace, such as an electric push rod, a hydraulic rod, etc., so as to displace the thermal shield 5 in a linear direction to shield or open the transfer port 21.
In some preferred embodiments, the eccentric assembly 42 is an eccentric connecting rod or eccentric wheel, which includes an outer shaft end driven by the driving motor 41 to rotate and an inner shaft end for connecting the thermal baffle 5 and driving the thermal baffle 5 to move, wherein the inner shaft end rotates along a circle when the outer shaft end rotates; in the present embodiment, the eccentric assembly 42 is preferably an eccentric link.
In some preferred embodiments, the thermal isolation baffle 5 is provided with a hanging hole 51, and the hanging hole 51 is movably connected with one end of the eccentric assembly 42.
Specifically, an axial end of the eccentric assembly 42 is inserted into the hanging hole 51 and movably connected to the hanging hole 51, so that the eccentric assembly 42 can drive the thermal insulation barrier 5 to displace to shield or open the transmission port 21 during the rotation process.
More specifically, the driving motor 41 and the eccentric assembly 42 are installed at a position higher or lower than the transfer port 21 so that the driving motor 41 and the eccentric assembly 42 can be misaligned with the transfer port 21 and drive the thermal barrier 5 to move to shield or open the transfer port 21; in the embodiment of the present application, the installation position of the driving motor 41 and the eccentric assembly 42 is preferably higher than the transfer port 21.
In some preferred embodiments, as shown in fig. 1 to 4, the eccentric assembly 42 preferably comprises a driving eccentric rod 421 and two driven eccentric rods 422, the driving eccentric rod 421 and the two driven eccentric rods 422 are synchronously connected by an intermediate connecting rod 423 to enable the driving eccentric rod 421 and the driven eccentric rods 422 to synchronously rotate, the driving eccentric rod 421 and the driven eccentric rods 422 are respectively provided with hooks for hooking and buckling the hanging holes 51 of the heat insulation baffle 5, the driving eccentric rod 421 passes through the flange and is connected with the output end of the driving motor 41, and the driven eccentric rods 422 are rotatably mounted on the flange 2; the driving motor 41 drives the driving eccentric rod 421 to rotate, so as to drive the driven eccentric rod 422 to synchronously rotate, so that the thermal baffle 5 can smoothly move to shield or open the flange transmission port 21.
Specifically, in this embodiment, the thermal baffle 5 preferably has three hanging holes 51, which are respectively hooked on the hooks of the driving eccentric rod 421 and the two driven eccentric rods 422.
In some preferred embodiments, the flange 2 has a water-cooling chamber 22, and the water-cooling chamber 22 is connected with a water inlet 23 for inputting cooling water and a water outlet 24 for outputting cooling water.
Specifically, the water cooling cavity 22 is used for introducing cooling water to cool the flange 2, and serves as a cooling device between the reaction chamber 1 and the transfer chamber to prevent the temperature in the reaction chamber 1 from being transferred to the transfer valve 3 through the flange 2 in a contact heat transfer manner.
More specifically, the water-cooling cavity 22 of the flange 2 is connected with an external cooling water circulation mechanism (not shown in the figure) through a water inlet 23 and a water outlet 24, the cooling water circulation mechanism is a general water circulation mechanism, and the flange 2 is continuously cooled during the operation of the epitaxial furnace, and the details are not described herein; in the process that the flange 2 is cooled by cooling water, the flange 2 can also cool the gas in the transmission port 21, so that when the heat insulation baffle plate 5 shields the transmission port 21, the gas medium with relatively low temperature in the transmission port 21 prevents the high-temperature radiation of the heat insulation baffle plate 5 from irradiating on the valve plate of the transmission valve 3.
More specifically, the cooling water cools the flange 2 and also cools the drive mechanism mounted on the flange 2.
In some preferred embodiments, as shown in fig. 4, the water cooling chamber 22 may be a cavity structure in the flange 2, and in order to ensure the cooling efficiency of the flange 2, the cavity structure is preferably designed as a water channel structure, which is continuously filled with cooling water for cooling through an external cooling water circulation mechanism, so as to ensure a continuous and uniform cooling operation of the flange 2, and effectively reduce the temperature of the entire flange 2.
In some preferred embodiments, the side of the thermal barrier 5 facing away from the flange 2 is provided with a mirror layer.
Specifically, among the existing structure, because the atmospheric pressure of reaction chamber 1 is the quasi-vacuum environment far below atmospheric pressure, heat-conducting medium gas molecule is less, so reaction chamber 1 mainly embodies on the heat radiation to the intensification effect of transmission valve 3, the valve heat-proof device of the epitaxial furnace of the embodiment of this application sets up thermal-insulated baffle 5 and sets up mirror layer can be with reaction chamber 1 in the heat radiation reflection back reaction chamber 1 towards transmission valve 3 production, effectively avoids the heat radiation to cause the intensification to transmission valve 3.
More specifically, the thermal baffle 5 is made of a high-temperature-resistant material (such as one or more of high-purity graphite, high-purity quartz and alumina ceramic), and the surface of one side of the thermal baffle 5 facing the reaction chamber 1 is made into a mirror surface and is coated with a high-temperature-resistant radiation reflection coating (such as a tantalum carbide coating), so that when the reaction chamber 1 works, most of the heat radiation generated in the reaction chamber and emitted towards the position of the transmission valve 3 is blocked and reflected by the mirror surface layer of the thermal baffle 5, and the temperature rise effect of the transmission valve 3 is further weakened.
In some preferred embodiments, the thermal shield plate 5 has a shielding panel 53 for shielding the transfer port 21, or has a shielding panel 53 for shielding the transfer port 21 and a transfer port 52 for conducting the transfer port 21.
Specifically, the heat insulating barrier 5 has the shielding panel 53 to achieve the opening and closing functions of the transfer port 21, however, in practical use, a displacement space of the heat insulating barrier 5 needs to be reserved between the reaction chamber 1 and the flange 2 when the heat insulating barrier 5 is installed, and if the heat insulating barrier 5 only has the shielding panel 53, when the heat insulating barrier 5 opens the transfer port 21, gas in the reaction chamber 1 easily flows into and remains in the displacement space between the reaction chamber 1 and the flange 2, and crystals are easily deposited in the displacement space after long-term use; therefore, in the present embodiment, the thermal insulation barrier 5 preferably has a shielding panel 53 for shielding the transfer port 21 and a transfer port 52 for conducting the transfer port 21.
More specifically, when the reaction chamber 1 is in the reaction state, the driving mechanism drives the thermal baffle 5 to move so that the shielding panel 53 of the thermal baffle 5 completely shields the transfer port 21 to shield the transfer port 21; when the reaction chamber 1 is in a non-reaction state and the loading and unloading operation is required, the driving mechanism drives the thermal baffle 5 to move so that the conveying port 52 of the thermal baffle 5 is facing the conveying port 21 to open the conveying port 21.
In some preferred embodiments, the cross-sectional size and shape of the transfer opening 52 are the same as those of the transfer opening 21, so that when the thermal isolation barrier 5 opens the transfer opening 21, the loading and unloading robot of the transfer chamber can smoothly load and unload the reaction chamber 1.
In a second aspect, as shown in fig. 5, an embodiment of the present application further provides an epitaxial furnace, where the epitaxial furnace includes:
a reaction chamber 1 for performing epitaxial growth;
a transfer valve 3 connected to the reaction chamber 1 via a flange 2 for connecting the reaction chamber 1 and a transfer chamber (not shown) of the epitaxial furnace;
the flange 2 is provided with a transmission port 21 for feeding materials on the substrate;
the epitaxial furnace further comprises:
the heat insulation baffle 5 is movably arranged on one side of the flange 2 close to the reaction chamber 1;
and the driving mechanism is arranged on the flange 2 and connected with the heat insulation baffle plate 5 and is used for driving the heat insulation baffle plate 5 to move so as to shield or open the transmission port 21 according to the operating state of the reaction chamber 1.
Specifically, the reaction chamber 1 has a reaction chamber, and a heating assembly and a gas supply assembly for heating the reaction chamber, wherein the transfer port 21 faces the reaction chamber of the reaction chamber 1.
More specifically, the transfer valve 3 is controlled by a controller of the epitaxial furnace to operate and is used for blocking or opening a connecting channel between the transfer chamber and the reaction chamber 1, and when the transfer valve 3 opens the connecting channel between the reaction chamber 1 and the transfer chamber, a feeding and discharging manipulator in the transfer chamber carries out feeding and discharging operation on the reaction chamber 1; in the embodiment of the present application, the driving mechanism and the transfer valve 3 operate cooperatively, and the driving mechanism and the transfer valve 3 may move synchronously, or the driving mechanism and the transfer valve 3 may move sequentially in a staggered manner by setting a delay interval.
Specifically, the transmission valve 3 is a pneumatic or electric gate valve, is controlled by a controller of the epitaxial furnace to move, and comprises a valve plate driving mechanism and a valve plate driven by the valve plate driving mechanism to lift; the delivery valve 3 opens or closes the outlet end of the delivery port 21 by changing the valve plate height thereof.
The epitaxial furnace can drive the heat insulation baffle 5 to move by using the driving mechanism according to the running state of the reaction chamber 1 so as to shield or open the transmission port 21 on the flange 2 between the transmission valve 3 and the reaction chamber 1; when the transmission port 21 is shielded, the high temperature originally directly acting on the transmission valve 3 in the reaction chamber 1 acts on the heat insulation baffle 5, so that the temperature rise of the transmission valve 3 is reduced, the service life of the valve plate of the transmission valve 3 is effectively prevented from being lost due to the high temperature, and the influence of the high temperature in the reaction chamber 1 on the temperature in the transmission chamber is effectively reduced.
In some preferred embodiments, the outlet end of the reaction chamber 1 is provided with a flange groove 11, the flange 2 has a boss 25 on the side facing the flange groove 11, and the side of the boss 25 is engaged with the flange groove 11.
Specifically, the epitaxial furnace of the embodiment of the present application utilizes the flange groove 11 and the boss 25 to cooperate with each other to perform the positioning connection of the reaction chamber 1 and the flange 2, so as to ensure that the reaction chamber of the reaction chamber 1 can be aligned with the transmission port 21, and seal the connection part between the two, thereby preventing gas leakage and temperature external dispersion.
More specifically, the flange groove 11 is preferably a cylindrical groove, the boss 25 is preferably a cylindrical boss, and the protruding height of the boss 25 is smaller than the groove depth of the flange groove 11, so that a displacement space for installing the heat insulation baffle 5 is left between the flange 2 and the reaction chamber 1 after the boss 25 is assembled and matched with the flange groove 11.
In some preferred embodiments, the drive mechanism comprises:
a drive motor 41 fixed to the flange 2;
and two ends of the eccentric component 42 are respectively connected with the driving motor 41 and the heat insulation baffle 5, and the eccentric component 42 is driven by the driving motor 41 to eccentrically swing and rotate so as to drive the heat insulation baffle 5 to shield or open the transmission port 21.
In some preferred embodiments, as shown in fig. 1 to 4, the eccentric assembly 42 is composed of a driving eccentric rod 421 and two driven eccentric rods 422, the driving eccentric rod 421 and the two driven eccentric rods 422 are synchronously connected by an intermediate connecting rod 423 to enable the driving eccentric rod 421 and the driven eccentric rods 422 to synchronously rotate, hooks for hanging and buckling the hanging holes 51 of the heat insulation baffle 5 are respectively arranged on the driving eccentric rod 421 and the driven eccentric rods 422, the driving eccentric rod 421 passes through the flange and is connected with the output end of the driving motor 41, and the driven eccentric rods 422 are rotatably mounted on the flange 2; the driving motor 41 drives the driving eccentric rod 421 to rotate so as to drive the driven eccentric rod 422 to synchronously rotate to enable the heat insulation baffle 5 to smoothly move to shield or open the flange transmission port 21.
In some preferred embodiments, as shown in fig. 5-8, the eccentric assembly 42 may also be an eccentric link, and the hanging hole 51 may be a straight slot hole.
In this embodiment, the thermal shield 5 is disposed in the flange groove 11, and when the thermal shield 5 is moved to the highest position and/or the lowest position by the driving mechanism, at least two corner ends contact with the side wall of the flange groove 11.
Specifically, the thermal baffle 5 may tilt under the driving displacement of the driving mechanism, especially in the movable connection manner of the eccentric link and the hanging hole 51 preferred in the embodiment of the present application, when the thermal baffle 5 opens the transfer port 21, the thermal baffle 5 may tilt due to the fact that the eccentric link fails to reach the designated position of the hanging hole 51, and thus the transfer port 21 is not completely opened (which is shown that the transfer port 52 does not completely block the transfer port 21 or the blocking panel 53 blocks a part of the transfer port 21), and when the thermal baffle 5 blocks the transfer port 21, the thermal baffle 5 may tilt due to the fact that the eccentric link fails to reach the designated position of the hanging hole 51, and thus the transfer port 21 is not completely blocked; therefore, in the embodiment of the present application, the size of the thermal baffle 5 is designed according to the size of the flange groove 11 and the installation position of the driving mechanism, so that when the thermal baffle 5 moves to the highest position and/or the lowest position under the driving of the driving mechanism, at least two corner ends contact with the side wall of the flange groove 11; the heat insulation baffle 5 may be in an open state corresponding to the transfer port 21 or in a state where the transfer port 21 is blocked when moved to the highest position, and in the embodiment of the present application, the heat insulation baffle 5 is preferably in a state where the transfer port 21 is blocked when moved to the highest position; as shown in fig. 7, when the eccentric assembly 42 of the driving mechanism is rotated to the highest position, under the limit of the engagement between the hanging hole 51 and the eccentric assembly 42, the two corner ends of the top of the thermal baffle 5 are in contact with the two side walls of the flange groove 11 and are symmetrically positioned, thereby ensuring that the transfer port 21 can be completely shielded (as shown in the case that the shielding panel 53 completely covers the transfer port 21 or the transfer port 52 does not overlap with the transfer port 21); similarly, as shown in fig. 8, when the eccentric assembly 42 of the driving mechanism is rotated to the low position, the two corner ends of the bottom of the thermal baffle 5 are in contact with the two side walls of the flange groove 11 under the limit of the engagement between the hanging hole 51 and the eccentric assembly 42, thereby ensuring that the transfer port 21 is completely opened.
In some other embodiments, the flange 2 is provided with a projection 26 on an end surface thereof for defining a position of the thermal baffle 5, and when the thermal baffle 5 blocks or opens the transfer port 21, the projection 26 is caught at the transfer port 52 of the thermal baffle 5 (when the transfer port 52 is not present, it is caught at an edge of the blocking panel 53), thereby defining the position of the thermal baffle 5.
Specifically, the projection 26 is smoothly protruded, so that the thermal baffle 5 can be separated from the limit action of the projection 26 to accurately block or open the transfer port 21 under the power of the driving mechanism.
More specifically, the number of the projections 26 is at least two; in this embodiment, the use of at least two projections 26 ensures that the thermal shield 5 can be stopped at a position where the transfer port 21 is being passed through by the transfer port 52 or at a position where the transfer port 21 is completely blocked when the thermal shield 5 blocks or opens the transfer port 21; as shown in fig. 7, the thermal shield 5 is lifted to the highest position by the driving mechanism, in this view, in the embodiment, the thermal shield 5 is lifted to the highest position to shield the transfer port 21, and the two protrusions 26 are clamped into two sides of the top of the transfer port 52, so as to position the thermal shield 5, such that the shielding panel 53 can accurately shield the transfer port 21 to shield the transfer port; the specific action of the projections 26 being clamped into the conveying opening 52 is that the driving mechanism drives the heat insulation baffle 5 to ascend, one projection 26 is firstly clamped into the range of the conveying opening 52, then the heat insulation baffle 5 continuously ascends, the heat insulation baffle 5 can only ascend along a specific path by combining the limiting displacement effect of the hanging hole 51 on the eccentric component 42 and the limiting effect of the projection 26 on the conveying opening 52, when the heat insulation baffle 5 ascends to the highest position, the other projection 26 is clamped into the conveying opening 52, and at the moment, the two projections 26 are in edge contact with the air inlet 52, so that the position of the heat insulation baffle 5 is positioned.
More specifically, the projection 26 is a ball end of a ball spring embedded in the flange 2, which prevents the projection 26 from interfering with the movement of the thermal shield 5.
In some preferred embodiments, the thickness of the thermal insulation barrier 5 is equal to the distance from the end surface of the boss 25 to the bottom of the flange groove 11, so that the thermal insulation barrier 5 can move in the flange groove 11 in a vertical sectional direction and prevent gas in the reaction chamber 1 from flowing into the displacement space outside the thermal insulation barrier 5.
In some preferred embodiments, the corner ends of the thermal separator 5 are rounded.
Specifically, thermal baffle 5 can receive frequently in turn to heat up and fall in the epitaxial reaction process, for preventing that thermal baffle 5 explodes owing to stress concentration receiving expend with heat and contract with cold and split, thermal baffle 5's corner all designs for the fillet to effectively avoid stress concentration, appear exploding because of cold and hot in turn and split in order to prevent thermal baffle.
To sum up, the embodiment of the application provides a valve heat-proof device and epitaxial furnace of epitaxial furnace, wherein, the valve heat-proof device of epitaxial furnace can utilize actuating mechanism drive heat insulating barrier 5 motion according to the running state of reacting chamber 1 in order to shelter from or open the transmission mouth 21 on the flange 2 between transmission valve 3 and the reacting chamber 1 to reduce the temperature rise of transmission valve 3, effectively avoided the valve plate of transmission valve 3 to lose life because of high temperature, and effectively reduced the influence of high temperature in the reacting chamber 1 to the transmission indoor temperature.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
What has been described above are merely some of the embodiments of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A valve heat-insulating device of an epitaxial furnace, mounted on the outlet end of a reaction chamber (1) of the epitaxial furnace, said device comprising:
the flange (2) is used for connecting the reaction chamber (1) and a transmission valve (3) of the epitaxial furnace, and a transmission port (21) for feeding materials on the substrate is formed in the flange (2);
characterized in that, the device still includes:
the heat insulation baffle (5) is movably arranged on one side of the flange (2) close to the reaction chamber (1);
and the driving mechanism is arranged on the flange (2), is connected with the heat insulation baffle (5) and is used for driving the heat insulation baffle (5) to move so as to shield or open the transmission port (21) according to the running state of the reaction chamber (1).
2. The valve heat insulating device of the epitaxial furnace according to claim 1, wherein the driving mechanism comprises:
a drive motor (41) fixed to the flange (2);
two ends of the eccentric component (42) are respectively connected with the driving motor (41) and the heat insulation baffle (5), and the eccentric component (42) is driven by the driving motor (41) to rotate eccentrically so as to drive the heat insulation baffle (5) to shield or open the transmission port (21).
3. The valve heat-insulating device of the epitaxial furnace is characterized in that the heat-insulating baffle plate (5) is provided with a hanging hole (51), and the hanging hole (51) is movably connected with one end of the eccentric component (42).
4. Valve insulation of an epitaxial furnace according to claim 1, characterised in that the flange (2) has a water-cooled cavity (22), and that the water-cooled cavity (22) is connected with a water inlet (23) for the input of cooling water and a water outlet (24) for the output of cooling water.
5. Valve insulation of an epitaxial furnace according to claim 1, characterised in that the side of the insulation barrier (5) facing away from the flange (2) is provided with a mirror layer.
6. The valve heat-insulating device of the epitaxial furnace according to claim 1, characterized in that the heat-insulating baffle (5) has a shielding panel (53) for shielding the transfer port (21) and a delivery port (52) for communicating the transfer port (21).
7. An epitaxial furnace, comprising:
a reaction chamber (1) for carrying out epitaxial growth;
the transmission valve (3) is connected with the reaction chamber (1) through a flange (2) and is used for connecting the reaction chamber (1) and a transmission chamber of the epitaxial furnace;
the flange (2) is provided with a transmission port (21) for feeding materials on the substrate;
it is characterized in that the epitaxial furnace further comprises:
the heat insulation baffle (5) is movably arranged on one side of the flange (2) close to the reaction chamber (1);
and the driving mechanism is arranged on the flange (2), is connected with the heat insulation baffle (5) and is used for driving the heat insulation baffle (5) to move to shield or open the conveying port (21) according to the running state of the reaction chamber (1).
8. Epitaxial furnace according to claim 7, characterized in that the outlet end of the reaction chamber (1) is provided with a flange groove (11), the flange (2) has a boss (25) on the side facing the flange groove (11), and the side of the boss (25) is fitted with the flange groove (11).
9. Epitaxial furnace according to claim 8, characterized in that the thermal shield (5) is arranged in the flange groove (11), at least two corner ends of the thermal shield (5) being in contact with the side walls of the flange groove (11) when the thermal shield is moved to the highest and/or lowest position by the drive means.
10. Epitaxial furnace according to claim 7, characterised in that the corner ends of the thermal barrier (5) are rounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210438710.7A CN114775045B (en) | 2022-04-21 | 2022-04-21 | Valve heat insulation device of epitaxial furnace and epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210438710.7A CN114775045B (en) | 2022-04-21 | 2022-04-21 | Valve heat insulation device of epitaxial furnace and epitaxial furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114775045A true CN114775045A (en) | 2022-07-22 |
| CN114775045B CN114775045B (en) | 2023-07-25 |
Family
ID=82432296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210438710.7A Active CN114775045B (en) | 2022-04-21 | 2022-04-21 | Valve heat insulation device of epitaxial furnace and epitaxial furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114775045B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3219331A (en) * | 1961-12-18 | 1965-11-23 | Illinois Nat Bank & Trust Co | Heat treating furnace |
| JPH06181176A (en) * | 1992-12-14 | 1994-06-28 | Fuji Electric Co Ltd | Semiconductor producing system |
| JPH0719050A (en) * | 1993-06-30 | 1995-01-20 | Isuzu Motors Ltd | Auxiliary chamber heat shielding structure in indirect injection engine |
| JP2005299990A (en) * | 2004-04-09 | 2005-10-27 | Daiichi Kiden:Kk | High temperature heating device |
| CN101270959A (en) * | 2007-03-21 | 2008-09-24 | 中国科学院理化技术研究所 | Quick reaction synthesis type high temperature atmosphere stove and method for synthesizing ceramic powder |
| CN101591803A (en) * | 2008-05-28 | 2009-12-02 | 中国科学院半导体研究所 | A kind of high-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN107435165A (en) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | A kind of epitaxial reaction chamber and Chemical Vapor-Phase Epitaxy equipment |
| CN210196793U (en) * | 2019-07-08 | 2020-03-27 | 青岛西海岸市政工程有限公司 | Seepage-proofing flange structure for improving quality of heat exchange station heating power pipeline joint |
| CN113611637A (en) * | 2021-08-31 | 2021-11-05 | 北京北方华创微电子装备有限公司 | Exhaust device and semiconductor heat treatment equipment |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
| CN113897674A (en) * | 2021-10-12 | 2022-01-07 | 季华实验室 | Multi-cavity silicon carbide epitaxial equipment and reaction chamber mechanism thereof |
-
2022
- 2022-04-21 CN CN202210438710.7A patent/CN114775045B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3219331A (en) * | 1961-12-18 | 1965-11-23 | Illinois Nat Bank & Trust Co | Heat treating furnace |
| JPH06181176A (en) * | 1992-12-14 | 1994-06-28 | Fuji Electric Co Ltd | Semiconductor producing system |
| JPH0719050A (en) * | 1993-06-30 | 1995-01-20 | Isuzu Motors Ltd | Auxiliary chamber heat shielding structure in indirect injection engine |
| JP2005299990A (en) * | 2004-04-09 | 2005-10-27 | Daiichi Kiden:Kk | High temperature heating device |
| CN101270959A (en) * | 2007-03-21 | 2008-09-24 | 中国科学院理化技术研究所 | Quick reaction synthesis type high temperature atmosphere stove and method for synthesizing ceramic powder |
| CN101591803A (en) * | 2008-05-28 | 2009-12-02 | 中国科学院半导体研究所 | A kind of high-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN107435165A (en) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | A kind of epitaxial reaction chamber and Chemical Vapor-Phase Epitaxy equipment |
| CN210196793U (en) * | 2019-07-08 | 2020-03-27 | 青岛西海岸市政工程有限公司 | Seepage-proofing flange structure for improving quality of heat exchange station heating power pipeline joint |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
| CN113611637A (en) * | 2021-08-31 | 2021-11-05 | 北京北方华创微电子装备有限公司 | Exhaust device and semiconductor heat treatment equipment |
| CN113897674A (en) * | 2021-10-12 | 2022-01-07 | 季华实验室 | Multi-cavity silicon carbide epitaxial equipment and reaction chamber mechanism thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114775045B (en) | 2023-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100978708B1 (en) | Load lock chamber for large area substrate processing system | |
| JP4246654B2 (en) | Vacuum processing equipment | |
| CN101097844B (en) | Apparatus for semiconductor processing | |
| WO2003048012A1 (en) | Substrate processing apparatus with independently configurable integral load locks | |
| US20060054278A1 (en) | Plasma processing apparatus | |
| US20190177832A1 (en) | Integrated chamber for vacuum coating | |
| JP5021112B2 (en) | Vacuum processing equipment | |
| CN114775045A (en) | Valve heat-proof device and epitaxial furnace of epitaxial furnace | |
| KR20100061214A (en) | The vacuum isolation slot valve and vacuum isolation door having the same | |
| CN107841727A (en) | A kind of cooling component and vacuum coating equipment | |
| KR100352765B1 (en) | Heat treatment apparatus for manufacturing semiconductor | |
| CN110600394B (en) | Exhaust system for semiconductor heat treatment equipment and semiconductor heat treatment equipment | |
| CN113611637A (en) | Exhaust device and semiconductor heat treatment equipment | |
| WO2006046796A1 (en) | Valve of gas exhaust system | |
| KR101028015B1 (en) | Cooling system for battery of driving vehicle | |
| CN115654161A (en) | Cold and hot isolating device and isolating valve component of food cooking equipment | |
| CN212205567U (en) | Heat pump drying-machine convenient to adjustment working medium evaporating temperature | |
| CN114717539B (en) | MOCVD cavity with reflection type high-energy electron diffractometer | |
| CN220503193U (en) | Vertical double-chamber hot filament CVD system | |
| KR101484553B1 (en) | Cluster type apparatus for processing substrate | |
| KR20230152401A (en) | Substrate processing apparatus | |
| JP2001355745A (en) | Gate valve | |
| CN219137001U (en) | Single crystal furnace and single crystal silicon production system | |
| CN220187408U (en) | Kiln convenient to get and put | |
| KR102656261B1 (en) | Flap push valve |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |