CN114775045B - Valve heat insulation device of epitaxial furnace and epitaxial furnace - Google Patents
Valve heat insulation device of epitaxial furnace and epitaxial furnace Download PDFInfo
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- CN114775045B CN114775045B CN202210438710.7A CN202210438710A CN114775045B CN 114775045 B CN114775045 B CN 114775045B CN 202210438710 A CN202210438710 A CN 202210438710A CN 114775045 B CN114775045 B CN 114775045B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of epitaxial growth, and particularly relates to a valve heat insulation device of an epitaxial furnace and the epitaxial furnace, wherein the valve heat insulation device of the epitaxial furnace comprises: the flange is used for connecting the reaction chamber of the epitaxial furnace and the transmission valve of the epitaxial furnace, and a transmission port for feeding and discharging the substrate is arranged on the flange; the apparatus further comprises: the heat insulation baffle is movably arranged at one side of the flange, which is close to the reaction chamber; the driving mechanism is arranged on the flange and connected with the heat insulation baffle plate and is used for driving the heat insulation baffle plate to move according to the running state of the reaction chamber so as to shade or open the transmission port; the device can utilize actuating mechanism drive heat-insulating baffle motion in order to shelter from or open the transmission mouth on the flange between transmission valve and the reaction chamber according to the running state of reaction chamber to reduce the temperature rise of transmission valve, effectively avoided the valve plate of transmission valve to lose life because of high temperature, and effectively reduced the influence of the temperature in the high Wen Duichuan transmission chamber in the reaction chamber.
Description
Technical Field
The invention belongs to the technical field of epitaxial growth, and particularly relates to a valve heat insulation device of an epitaxial furnace and the epitaxial furnace.
Background
The epitaxial furnace is generally provided with a reaction chamber and a transmission chamber for feeding and discharging the reaction chamber, and the reaction chamber and the transmission chamber are connected by virtue of a transmission valve and a flange; in the silicon carbide epitaxial reaction process, the reaction chamber generally works in a high-temperature environment of about 1500-1700 ℃, and the transmission chamber generally works at normal temperature; all parts in the transmission chamber do not have high temperature resistant property, so a flange and a transmission valve are required to be arranged between the reaction chamber and the transmission chamber to isolate high temperature of the reaction chamber from being transmitted into the transmission chamber, wherein the flange is generally designed as a water-cooling flange to isolate high temperature in the reaction chamber, but in order to carry out feeding and discharging operation on the reaction chamber through the transmission chamber, a transmission port for feeding and discharging is required to be designed on the flange, and the transmission valve is connected with the transmission port and is used for changing the communication state of the transmission port and the transmission chamber. However, when the transmission valve blocks the communication state between the transmission port and the transmission chamber, high-temperature radiation in the reaction chamber irradiates on the valve plate of the transmission valve through the transmission port, so that the transmission valve is easily ablated by the high-temperature radiation after long-time use, the service life of the transmission valve is reduced, and even the sealing failure of the transmission valve is caused.
Accordingly, the prior art is subject to improvement and development.
Disclosure of Invention
The utility model aims at providing a valve heat-proof device of epitaxial furnace and epitaxial furnace, can avoid the interior high temperature of reaction to act on the transmission valve and damage the transmission valve when epitaxial growth.
In a first aspect, the present application provides a valve thermal insulation device for an epitaxial furnace, mounted on an outlet end of a reaction chamber of the epitaxial furnace, the device comprising:
the flange is used for connecting the reaction chamber and the transmission valve of the epitaxial furnace, and a transmission port used for feeding and discharging the substrate is arranged on the flange;
the apparatus further comprises:
the heat insulation baffle is movably arranged at one side of the flange, which is close to the reaction chamber;
and the driving mechanism is arranged on the flange, connected with the heat insulation baffle plate and used for driving the heat insulation baffle plate to move according to the running state of the reaction chamber so as to shade or open the transmission port.
The utility model provides a valve heat insulating device of epitaxial furnace can utilize actuating mechanism drive heat insulating barrier motion in order to shelter from or open the transmission mouth on the flange according to the running state of reaction chamber for the transmission mouth is when being sheltered from, has the heat insulating component that heat insulating barrier and flange both constitute between transmission valve and the reaction chamber, has reduced the temperature rise of transmission valve, thereby has effectively avoided the valve plate of transmission valve to lose life because of the high temperature.
The valve heat insulation device of the epitaxial furnace, wherein the driving mechanism comprises:
the driving motor is fixed on the flange;
and the two ends of the eccentric assembly are respectively connected with the driving motor and the heat insulation baffle, and the eccentric assembly is driven by the driving motor to eccentrically rotate so as to drive the heat insulation baffle to shield or open the transmission port.
In the valve heat insulation device of the epitaxial furnace, when the reaction chamber enters a reaction state, the driving motor is started to enable the eccentric assembly to eccentrically rotate so as to change the position of the heat insulation baffle plate, so that the heat insulation baffle plate shields the transmission port to shield the transmission port; when the reaction chamber transmits the substrate slice, the driving motor is started to enable the eccentric assembly to eccentrically rotate so as to change the position of the heat insulation baffle plate, and therefore the heat insulation baffle plate can open the transmission port.
The valve heat insulation device of the epitaxial furnace is characterized in that the heat insulation baffle is provided with a hanging hole, and the hanging hole is movably connected with one end of the eccentric assembly.
The valve heat insulation device of the epitaxial furnace is characterized in that the flange is provided with a water cooling cavity, and the water cooling cavity is connected with a water inlet for inputting cooling water and a water outlet for outputting the cooling water.
In the valve heat insulation device of the epitaxial furnace, the water cooling cavity is used for introducing cooling water to cool the flange, and the valve heat insulation device is used as a cooling device between the reaction chamber and the transmission chamber, so that the temperature in the reaction chamber is prevented from being transmitted to the transmission valve through the flange in a contact heat transfer mode.
The valve heat insulation device of the epitaxial furnace is characterized in that a mirror layer is arranged on one side of the heat insulation baffle, which is away from the flange.
In the valve heat insulation device of the epitaxial furnace, the heat insulation baffle is provided with the mirror layer, so that heat radiation generated by the reaction chamber towards the transmission valve can be reflected back into the reaction chamber, and the temperature rise of the transmission valve caused by the heat radiation is effectively avoided.
The valve heat insulation device of the epitaxial furnace is characterized in that the heat insulation baffle is provided with a shielding panel for shielding the transmission port and a transmission port for conducting the transmission port.
In a second aspect, the present application further provides an epitaxial furnace, the epitaxial furnace comprising:
a reaction chamber for performing epitaxial growth;
the transmission valve is connected with the reaction chamber through a flange and is used for connecting the reaction chamber and the transmission chamber of the epitaxial furnace;
the flange is provided with a transmission port for feeding and discharging the substrate;
the epitaxial furnace further comprises:
the heat insulation baffle is movably arranged at one side of the flange, which is close to the reaction chamber;
and the driving mechanism is arranged on the flange, connected with the heat insulation baffle plate and used for driving the heat insulation baffle plate to move according to the running state of the reaction chamber so as to shade or open the transmission port.
According to the epitaxial furnace, the driving mechanism can be used for driving the heat insulation baffle to move according to the running state of the reaction chamber so as to shade or open the transmission port on the flange between the transmission valve and the reaction chamber; when the transmission port is shielded, the high temperature in the reaction chamber, which is originally directly acted on the transmission valve, acts on the heat insulation baffle plate, so that the temperature rise of the transmission valve is reduced.
The epitaxial furnace is characterized in that a flange groove is formed in the outlet end of the reaction chamber, a boss is arranged on one side of the flange, facing the flange groove, of the flange, and the side face of the boss is matched with the flange groove.
According to the epitaxial furnace, the flange grooves and the bosses are matched with each other to carry out positioning connection of the reaction chamber and the flange, so that the reaction chamber of the reaction chamber can be ensured to be opposite to the transmission port, and the connection part between the reaction chamber and the flange is sealed to prevent gas and temperature from leaking.
The epitaxial furnace is characterized in that the heat insulation baffle is arranged in the flange groove, and at least two corner ends are contacted with the side wall of the flange groove when the heat insulation baffle is driven by the driving mechanism to move to the highest position and/or the lowest position.
The epitaxial furnace is characterized in that the corner ends of the heat insulation baffle are rounded.
In one type of epitaxial furnace of this example, the corner ends of the heat shield are rounded to effectively avoid stress concentration, so as to prevent cracking of the heat shield due to alternating cold and hot.
From the above, the application provides a valve heat-insulating device of an epitaxial furnace and the epitaxial furnace, wherein, the valve heat-insulating device of the epitaxial furnace can utilize the driving mechanism to drive the heat-insulating baffle to move according to the running state of a reaction chamber so as to shelter from or open a transmission port on a flange between a transmission valve and the reaction chamber, thereby reducing the temperature rise of the transmission valve, effectively avoiding the loss of the service life of a valve plate of the transmission valve due to high temperature, and effectively reducing the influence of the temperature in the high Wen Duichuan transmission chamber.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial furnace provided in an embodiment of the present application after a reaction chamber is hidden.
Fig. 2 is a schematic structural diagram of a valve heat insulation device of an epitaxial furnace according to an embodiment of the present application when a heat insulation baffle shields a transmission port.
Fig. 3 is a schematic structural view of a valve heat insulation device of an epitaxial furnace according to an embodiment of the present application when a heat insulation baffle opens a transfer port.
Fig. 4 is a schematic structural diagram of a water cooling cavity in a flange of a valve heat insulation device of an epitaxial furnace according to an embodiment of the present application.
Fig. 5 is an exploded view of an epitaxial furnace according to an embodiment of the present application.
Fig. 6 is a schematic structural view of the epitaxial furnace after concealing the reaction chamber when the eccentric assembly is an eccentric link.
Fig. 7 is a schematic view of the structure of the heat shield of the valve heat shield to shield the transfer port when the eccentric assembly is an eccentric link.
Fig. 8 is a schematic view showing a structure in which a heat shield plate of a valve heat shield opens a transfer port when an eccentric assembly is an eccentric link.
Description of the reference numerals: 1. a reaction chamber; 2. a flange; 3. a transfer valve; 5. a thermal shield; 11. a flange groove; 21. a transmission port; 22. a water cooling cavity; 23. a water inlet; 24. a water outlet; 25. a boss; 26. a bump; 41. a driving motor; 42. an eccentric assembly; 51. a hanging hole; 52. a delivery port; 53. a shielding panel; 421. a driving eccentric rod; 422. driven eccentric rod.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
The valve heat insulation device of the epitaxial furnace and the epitaxial furnace are mainly applied to epitaxial equipment of vapor phase chemical deposition, and are particularly suitable for horizontal epitaxial furnaces, the horizontal epitaxial furnaces are provided with reaction cavities which are horizontally arranged, and a substrate is placed in the reaction cavities and continuously rotates so that reaction gases are uniformly deposited on the substrate to form crystals after being reacted.
The epitaxial furnace of the vapor phase chemical deposition reaction needs a higher process temperature to perform crystal growth, for example, the process temperature of the reaction chamber of the silicon carbide (SiC) epitaxial furnace is about 1500-1700 ℃, a larger difference is formed between the process temperature and room temperature, and under the normal use condition, the high temperature in the reaction chamber of the reaction chamber 1 can be transferred to the transmission valve 3 connected with the reaction chamber 1 and the transmission chamber, so that the service life of the transmission valve 3 is lost.
In a first aspect, as shown in fig. 1 to 4, an embodiment of the present application provides a valve heat insulation device of an epitaxial furnace, which is installed on an outlet end of a reaction chamber 1 of the epitaxial furnace, and the device includes:
the flange 2 is used for connecting the reaction chamber 1 and the transmission valve 3 of the epitaxial furnace, and a transmission port 21 for feeding and discharging the substrate is arranged on the flange 2;
the apparatus further comprises:
the heat insulation baffle plate 5 is movably arranged on one side of the flange 2 close to the reaction chamber 1;
and the driving mechanism is arranged on the flange 2 and connected with the heat insulation baffle plate 5, and is used for driving the heat insulation baffle plate 5 to move according to the running state of the reaction chamber 1 so as to shade or open the transmission port 21.
Specifically, a valve heat insulation device of an epitaxial furnace in the embodiment of the application is installed between a reaction chamber 1 and a transmission chamber of the epitaxial furnace to serve as a connecting member of the reaction chamber 1 and the transmission chamber, and an up-and-down feeding manipulator is arranged in the transmission chamber and used for moving a substrate to perform up-and-down feeding operation on the reaction chamber 1; the transfer valve 3 is disposed between the transfer chamber and the valve heat insulating device of the epitaxial furnace of the embodiment of the present application, and is used for closing the channel between the reaction chamber 1 and the transfer chamber to seal the reaction chamber 1 when the reaction chamber 1 reacts.
More specifically, the loading and unloading manipulator performs loading and unloading operations of the reaction chamber 1 by extending into the transfer port 21.
More specifically, the operation states of the reaction chamber 1 include a reaction state and a non-reaction state, when the reaction chamber 1 is in the reaction state, the transmission valve 3 is in a closed state, that is, the valve plate of the transmission valve 3 isolates the transmission port 21 from the transmission chamber, in order to prevent the valve plate of the transmission valve from being exposed to high-temperature radiation of the reaction chamber 1 through the transmission port 21, at this time, the heat insulation baffle plate 5 shields the transmission port 21 under the drive of the driving mechanism so as to prevent the high-temperature radiation of the reaction chamber 1 from directly irradiating on the valve plate of the transmission valve 3, and further prevent the valve plate of the transmission valve 3 from being ablated due to the high-temperature radiation, thereby protecting the transmission valve 3; when the reaction chamber 1 is in a non-reaction state and is subjected to loading and unloading operation by using a manipulator in the transmission chamber, the heat insulation baffle plate 5 is driven by the driving mechanism to conduct the transmission port 21, so that the transmission port 21 is conducted with the internal space of the reaction chamber 1, and meanwhile, the transmission valve 3 is controlled to be opened, so that the reaction chamber 1 is conducted with the transmission chamber to facilitate loading and unloading operation on the reaction chamber 1.
Specifically, the transfer valve 3 is opened only when the loading and unloading robot performs loading and unloading to conduct the transfer port 21 and the transfer chamber.
According to the valve heat insulation device of the epitaxial furnace, the heat insulation baffle plate 5 can be driven by the driving mechanism to move according to the running state of the reaction chamber 1 so as to shade or open the transmission port 21 on the flange 2, so that when the transmission port 21 is shaded, a heat insulation assembly consisting of the heat insulation baffle plate 5 and the flange 2 is arranged between the transmission valve 3 and the reaction chamber 1; under the blocking effect of the heat-insulating baffle plate 5, the heat which is originally directly radiated on the valve plate of the transmission valve 3 in the reaction chamber 1 is blocked on the heat-insulating baffle plate 5, so that the temperature rise of the valve plate of the transmission valve 3 is reduced, and the valve plate of the transmission valve 3 is effectively prevented from being ablated and damaged due to high temperature.
More specifically, the valve heat insulation device of the epitaxial furnace can effectively reduce the temperature rise of the transmission valve 3, so that the temperature rise of a transmission chamber can be indirectly avoided, the loss of the service life of devices (such as an upper discharging manipulator) in the transmission chamber due to the temperature rise is avoided, and the hardware maintenance cost of the whole epitaxial furnace is reduced.
In some preferred embodiments, the drive mechanism comprises:
a driving motor 41 fixed to the flange 2;
and the two ends of the eccentric component 42 are respectively connected with the driving motor 41 and the heat insulation baffle plate 5, and the eccentric component 42 is driven by the driving motor 41 to eccentrically rotate so as to drive the heat insulation baffle plate 5 to shield or open the transmission port 21.
Specifically, the heat shielding plate 5 shields the transfer port 21 by shielding the transfer port 21 or inserting the transfer port 21, and in the embodiment of the present application, the heat shielding plate 5 preferably shields the transfer port 21 to shield the transfer port 21.
More specifically, the driving motor 41 is installed at a side of the flange 2 away from the reaction chamber 1, so that the service life of the driving motor 41 due to high temperature loss of the reaction chamber 1 is avoided.
More specifically, the casing of the driving motor 41 is sealed and fixed on the flange 2, so that leakage of gas in the reaction chamber 1 from a gap between the casing of the motor and the flange 2 is avoided.
More specifically, the driving motor 41 is electrically connected to a controller (not shown) of the epitaxial furnace, and the controller controls the driving motor 41 to operate according to the operation state of the reaction chamber 1 in the epitaxial furnace, and is used for controlling each electrical component of the whole epitaxial furnace to operate, for example, controlling the external heating coil of the reaction chamber 1 to be electrified so as to heat the graphite layer in the reaction chamber 1; when the controller controls the reaction chamber 1 to enter a reaction state, the controller controls the driving motor 41 to start to eccentrically rotate the eccentric assembly 42 so as to change the position of the heat insulation baffle plate 5, so that the heat insulation baffle plate 5 shields the transmission port 21 to shield the transmission port 21; when the controller controls the reaction chamber 1 to be separated from the reaction state and feeding and discharging are required, the controller controls the driving motor 41 to start to eccentrically rotate the eccentric assembly 42 so as to change the position of the heat insulation baffle plate 5, so that the heat insulation baffle plate 5 opens the transmission port 21.
In some other embodiments, the driving mechanism may further include a driver for driving the heat shield plate 5 to linearly displace, such as an electric push rod, a hydraulic rod, etc., so that the heat shield plate 5 can be displaced in a linear direction to block or open the transfer port 21.
In some preferred embodiments, the eccentric assembly 42 is an eccentric link or eccentric that includes an outer shaft end that is driven to rotate by the drive motor 41 and an inner shaft end that is used to connect to the thermal shield 5 and move the thermal shield 5, wherein the inner shaft end rotates along a circumference as the outer shaft end rotates; in the present embodiment, the eccentric assembly 42 is preferably an eccentric link.
In some preferred embodiments, the heat shield 5 is provided with a hanging hole 51, and the hanging hole 51 is movably connected with one end of the eccentric assembly 42.
Specifically, one shaft end of the eccentric assembly 42 is inserted into the hanging hole 51 and movably connected with the hanging hole 51, so that the eccentric assembly 42 can drive the heat insulation baffle plate 5 to displace to block or open the transmission port 21 in the rotating process.
More specifically, the mounting positions of the driving motor 41 and the eccentric assembly 42 are higher or lower than the transfer port 21 so that the driving motor 41 and the eccentric assembly 42 can be dislocated from the transfer port 21 and drive the heat insulation barrier 5 to move to block or open the transfer port 21; in the present embodiment, the mounting position of the driving motor 41 and the eccentric assembly 42 is preferably higher than the transfer port 21.
In some preferred embodiments, as shown in fig. 1-4, the eccentric assembly 42 is preferably composed of a driving eccentric rod 421 and two driven eccentric rods 422, the driving eccentric rod 421 and the two driven eccentric rods 422 are synchronously connected by an intermediate connecting rod 423 to enable the driving eccentric rod 421 and the driven eccentric rods 422 to synchronously rotate, hooks for hooking the hanging holes 51 of the heat insulation baffle 5 are arranged on the driving eccentric rod 421 and the driven eccentric rods 422, the driving eccentric rod 421 passes through the flange and is connected with the output end of the driving motor 41, and the driven eccentric rods 422 are rotatably arranged on the flange 2; the driving motor 41 drives the driving eccentric rod 421 to rotate so as to drive the driven eccentric rod 422 to synchronously rotate, so that the heat insulation baffle 5 stably moves to block or open the flange transmission port 21.
Specifically, in this embodiment, the heat shield plate 5 preferably has three hanging holes 51, which are respectively hung on the hooks of the driving eccentric rod 421 and the two driven eccentric rods 422.
In some preferred embodiments, the flange 2 has a water cooling chamber 22, the water cooling chamber 22 being connected with a water inlet 23 for inputting cooling water and a water outlet 24 for outputting cooling water.
Specifically, the water cooling cavity 22 is used for introducing cooling water to cool the flange 2, and is used as a cooling device between the reaction chamber 1 and the transmission chamber, so that the temperature in the reaction chamber 1 is prevented from being transmitted to the transmission valve 3 through the flange 2 in a contact heat transfer mode.
More specifically, the water cooling cavity 22 of the flange 2 is connected to an external cooling water circulation mechanism (not shown) through a water inlet 23 and a water outlet 24, and the cooling water circulation mechanism is a general water circulation mechanism, and the flange 2 is continuously cooled during the operation of the epitaxial furnace, which is not described in detail herein; in the process of cooling the flange 2 by cooling water, the flange 2 can cool the gas in the transmission port 21, so that when the transmission port 21 is blocked by the heat insulation baffle plate 5, the high-temperature radiation of the heat insulation baffle plate 5 is blocked by the gas medium with relatively low temperature in the transmission port 21 to the valve plate of the transmission valve 3.
More specifically, the cooling water cools the flange 2 and also cools the driving mechanism mounted on the flange 2.
In some preferred embodiments, as shown in fig. 4, the water cooling cavity 22 may be a cavity structure in the flange 2, and in order to ensure the cooling efficiency of the flange 2, the cavity structure is preferably designed to be a water channel structure, and cooling water is continuously introduced into the cavity structure through an external cooling water circulation mechanism for cooling, so that continuous and uniform cooling operation on the flange 2 can be ensured, and the overall temperature of the flange 2 can be effectively reduced.
In some preferred embodiments, the side of the heat shield 5 facing away from the flange 2 is provided with a mirror layer.
Specifically, in the existing structure, because the atmospheric pressure of the reaction chamber 1 is far below the quasi-vacuum environment of atmospheric pressure, the heat conduction medium gas molecules are less, so the heating effect of the reaction chamber 1 on the transmission valve 3 is mainly embodied on heat radiation, the valve heat insulation device of the epitaxial furnace provided by the embodiment of the application is provided with the heat insulation baffle 5, and the mirror layer is arranged to reflect the heat radiation generated by the reaction chamber 1 towards the transmission valve 3 back into the reaction chamber 1, so that the heating of the transmission valve 3 caused by the heat radiation is effectively avoided.
More specifically, the heat-insulating baffle plate 5 is made of high-temperature-resistant materials (such as one or more materials of high-purity graphite, high-purity quartz and alumina ceramics), one side surface of the heat-insulating baffle plate 5 facing the reaction chamber 1 is made into a mirror surface, and a high-temperature-resistant radiation reflection coating (such as a tantalum carbide coating) is coated, so that most of heat radiation emitted towards the position of the transmission valve 3, generated in the reaction chamber 1, is blocked and reflected by the mirror surface layer of the heat-insulating baffle plate 5 when the reaction chamber 1 works, and the temperature rise effect of the transmission valve 3 is further weakened.
In some preferred embodiments, the thermal shield 5 has a shielding panel 53 for shielding the transfer port 21, or has a shielding panel 53 for shielding the transfer port 21 and a transfer port 52 for communicating with the transfer port 21.
Specifically, the heat-insulating barrier 5 has the shielding panel 53 to realize the opening and closing functions of the transfer port 21, however, in actual use, a displacement space of the heat-insulating barrier 5 needs to be reserved between the reaction chamber 1 and the flange 2 when the heat-insulating barrier 5 is installed, if the heat-insulating barrier 5 has only the shielding panel 53, when the heat-insulating barrier 5 opens the transfer port 21, gas in the reaction chamber 1 easily flows into and remains in the displacement space between the reaction chamber 1 and the flange 2, and crystals are easily deposited in the displacement space after long-term use; accordingly, in the present embodiment, the heat insulating barrier 5 preferably has a shielding panel 53 for shielding the transfer port 21 and a transfer port 52 for conducting the transfer port 21.
More specifically, when the reaction chamber 1 is in the reaction state, the driving mechanism drives the heat insulating barrier 5 to move so that the shielding panel 53 of the heat insulating barrier 5 completely shields the transfer port 21 to shield the transfer port 21; when the reaction chamber 1 is in a non-reaction state and the feeding and discharging operations are required, the driving mechanism drives the heat insulation baffle plate 5 to move so that the conveying port 52 of the heat insulation baffle plate 5 is opposite to the conveying port 21 to open the conveying port 21.
In some preferred embodiments, the cross section of the conveying opening 52 is identical to the conveying opening 21 in size and shape, so that the feeding and discharging manipulator of the conveying chamber can smoothly feed and discharge the reaction chamber 1 when the heat insulation baffle plate 5 opens the conveying opening 21.
In a second aspect, as shown in fig. 5, an embodiment of the present application further provides an epitaxial furnace, including:
a reaction chamber 1 for performing epitaxial growth;
a transfer valve 3 connected to the reaction chamber 1 through a flange 2 for connecting the reaction chamber 1 and a transfer chamber (not shown) of the epitaxial furnace;
the flange 2 is provided with a transmission port 21 for feeding and discharging the substrate;
the epitaxial furnace further comprises:
the heat insulation baffle plate 5 is movably arranged on one side of the flange 2 close to the reaction chamber 1;
and the driving mechanism is arranged on the flange 2 and connected with the heat insulation baffle plate 5, and is used for driving the heat insulation baffle plate 5 to move according to the running state of the reaction chamber 1 so as to shade or open the transmission port 21.
Specifically, the reaction chamber 1 has a reaction chamber, and a heating assembly and a gas supply assembly for heating the reaction chamber, wherein the transfer port 21 is facing the reaction chamber of the reaction chamber 1.
More specifically, the transmission valve 3 is controlled by a controller of the epitaxial furnace to operate, and is used for blocking or opening a connecting channel between the transmission chamber and the reaction chamber 1, and when the transmission valve 3 opens the connecting channel between the reaction chamber 1 and the transmission chamber, a feeding and discharging manipulator in the transmission chamber performs feeding and discharging operation on the reaction chamber 1; in this embodiment, the driving mechanism and the transmission valve 3 cooperate to operate, which may be that the driving mechanism and the transmission valve 3 move synchronously, or that the movement sequence of the driving mechanism and the transmission valve 3 is staggered by setting a delay interval.
Specifically, the transmission valve 3 is a pneumatic or electric gate valve, and is controlled to move by a controller of the epitaxial furnace, and comprises a valve plate driving mechanism and a valve plate driven to lift by the valve plate driving mechanism; the transfer valve 3 opens or closes the outlet end of the transfer port 21 by changing the valve plate height thereof.
According to the epitaxial furnace, the heat insulation baffle 5 can be driven by the driving mechanism to move according to the running state of the reaction chamber 1 so as to shade or open the transmission port 21 on the flange 2 between the transmission valve 3 and the reaction chamber 1; when the transmission port 21 is shielded, the high temperature in the reaction chamber 1, which is originally directly acted on the transmission valve 3, acts on the heat insulation baffle 5, so that the temperature rise of the transmission valve 3 is reduced, the service life of the valve plate of the transmission valve 3 is effectively avoided due to the high temperature, and the influence of the temperature in the transmission chamber of high Wen Duichuan in the reaction chamber 1 is effectively reduced.
In some preferred embodiments, the outlet end of the reaction chamber 1 is provided with a flange groove 11, the side of the flange 2 facing the flange groove 11 is provided with a boss 25, and the side surface of the boss 25 is matched with the flange groove 11.
Specifically, the epitaxial furnace in the embodiment of the application utilizes the cooperation of the flange groove 11 and the boss 25 to carry out positioning connection of the reaction chamber 1 and the flange 2, ensures that the reaction cavity of the reaction chamber 1 can be opposite to the transmission port 21, seals the connection part between the two, and prevents gas leakage and temperature outward dispersion.
More specifically, the flange groove 11 is preferably a cylindrical groove, the boss 25 is preferably a cylindrical boss, and the protruding height of the boss 25 is smaller than the groove depth of the flange groove 11, so that a displacement space for installing the heat insulation baffle 5 is reserved between the flange 2 and the reaction chamber 1 after the boss 25 is assembled and matched with the flange groove 11.
In some preferred embodiments, the drive mechanism comprises:
a driving motor 41 fixed to the flange 2;
and the two ends of the eccentric component 42 are respectively connected with the driving motor 41 and the heat insulation baffle plate 5, and the eccentric component 42 is driven by the driving motor 41 to perform eccentric swinging rotation so as to drive the heat insulation baffle plate 5 to shield or open the transmission port 21.
In some preferred embodiments, as shown in fig. 1 to 4, the eccentric assembly 42 is composed of a driving eccentric rod 421 and two driven eccentric rods 422, the driving eccentric rod 421 and the two driven eccentric rods 422 are synchronously connected by an intermediate connecting rod 423 to enable the driving eccentric rod 421 and the driven eccentric rods 422 to synchronously rotate, hooks for hooking the hanging holes 51 of the heat insulation baffle 5 are arranged on the driving eccentric rod 421 and the driven eccentric rods 422, the driving eccentric rod 421 passes through the flange and is connected with the output end of the driving motor 41, and the driven eccentric rods 422 are rotatably arranged on the flange 2; the driving motor 41 drives the driving eccentric rod 421 to rotate so as to drive the driven eccentric rod 422 to synchronously rotate, so that the heat insulation baffle 5 stably moves to block or open the flange transmission port 21.
In some preferred embodiments, as shown in fig. 5-8, the eccentric assembly 42 may also be an eccentric link, with the hanging hole 51 being a straight slot.
In this embodiment, the heat shield 5 is disposed in the flange groove 11, and at least two corner ends are in contact with the side wall of the flange groove 11 when the heat shield 5 is moved to the highest position and/or the lowest position by the driving mechanism.
Specifically, the heat insulation baffle 5 may generate a certain tilting under the condition that the driving mechanism drives displacement, especially in the movable connection mode of the preferred eccentric connecting rod and the hanging hole 51 in the embodiment of the application, when the transmission port 21 is opened, the heat insulation baffle 5 may tilt due to the fact that the eccentric connecting rod fails to reach the designated position of the hanging hole 51, and further the transmission port 21 is not fully opened (which is shown that the transmission port 52 is not fully over against the transmission port 21 or the shielding panel 53 shields part of the position of the transmission port 21), and when the transmission port 21 is shielded, the heat insulation baffle 5 may tilt due to the fact that the eccentric connecting rod fails to reach the designated position of the hanging hole 51, and thus the transmission port 21 is not fully shielded; therefore, in the embodiment of the application, the size of the heat insulation baffle 5 is designed according to the size of the flange groove 11 and the installation position of the driving mechanism, so that when the heat insulation baffle 5 moves to the highest position and/or the lowest position under the driving of the driving mechanism, at least two corner ends are in contact with the side wall of the flange groove 11; the heat insulation baffle 5 may be in an opened state corresponding to the transmission port 21 or in a blocked state corresponding to the transmission port 21 when moving to the highest position, and in this embodiment, the heat insulation baffle 5 is preferably in a blocked state corresponding to the transmission port 21 when moving to the highest position; as shown in fig. 7, when the eccentric assembly 42 of the driving mechanism rotates to the highest position, under the limit of the cooperation of the hanging hole 51 and the eccentric assembly 42, the two corner ends of the top of the heat insulation baffle plate 5 are contacted with the two side walls of the flange groove 11, and the positions are symmetrical, so that the transmission port 21 can be completely shielded (the shielding panel 53 completely covers the transmission port 21 or the transmission port 52 does not overlap with the transmission port 21); similarly, as shown in fig. 8, when the eccentric assembly 42 of the driving mechanism rotates to the low position, under the limit of the cooperation of the hanging hole 51 and the eccentric assembly 42, the two corner ends of the bottom of the heat insulation baffle 5 are contacted with the two side walls of the flange groove 11, so as to ensure that the transmission port 21 is completely opened.
In some other embodiments, the end surface of the flange 2 is provided with a projection 26 for defining the position of the heat-insulating barrier 5, when the heat-insulating barrier 5 shields or opens the transfer port 21, the projection 26 is blocked at the delivery port 52 of the heat-insulating barrier 5 (when the delivery port 52 is not present, it is blocked at the edge of the shielding panel 53), so as to define the position of the heat-insulating barrier 5.
Specifically, the protrusion 26 is smoothly protruded, so that the heat insulation baffle 5 can exactly block or open the transmission port 21 by disengaging the limit function of the protrusion 26 under the power applied by the driving mechanism.
More specifically, there are at least two bumps 26; in this embodiment, the use of at least two projections 26 ensures that when the transfer port 21 is blocked or opened by the heat shield plate 5, the heat shield plate 5 can rest at a position where the transfer port 52 is opposite to the transfer port 21 or at a position where the transfer port 21 is completely blocked; as shown in fig. 7, the heat insulation baffle 5 is lifted to the highest position under the action of the driving mechanism, in the embodiment of the view, when the heat insulation baffle 5 is lifted to the highest position, the transmission port 21 is blocked, and at the moment, the two protruding blocks 26 are clamped into the two sides of the top of the transmission port 52, so that the heat insulation baffle 5 is positioned, and the blocking panel 53 can accurately block the transmission port 21 to block the transmission port; the concrete action of the protruding block 26 being blocked into the conveying opening 52 is that the driving mechanism drives the heat insulation baffle 5 to ascend, wherein one protruding block 26 is blocked into the range of the conveying opening 52, then the heat insulation baffle 5 continues to ascend, the heat insulation baffle 5 can only ascend along a specific path by combining the limiting displacement effect of the hanging hole 51 on the eccentric assembly 42 and the limiting effect of the protruding block 26 on the conveying opening 52, and when the heat insulation baffle 5 ascends to the highest position, the other protruding block 26 is blocked into the conveying opening 52, at the moment, the two protruding blocks 26 are contacted with the edge of the air inlet 52, so that the position of the heat insulation baffle 5 is positioned.
More specifically, the lugs 26 are ball ends of ball springs that are embedded in the flange 2 to prevent the lugs 26 from interfering with the movement of the heat shield 5.
In some preferred embodiments, the thickness of the heat shield 5 is equal to the distance from the end surface of the boss 25 to the bottom of the flange groove 11, so that the heat shield 5 can move in the flange groove 11 in a vertical cross-section direction and can prevent the gas in the reaction chamber 1 from flowing into the displacement space outside the heat shield 5.
In some preferred embodiments, the corner ends of the insulating barrier 5 are rounded.
Specifically, the heat-insulating baffle 5 is heated up and lowered down frequently and alternately in the epitaxial reaction process, in order to prevent the heat-insulating baffle 5 from being burst due to stress concentration on the heat expansion and cold contraction, corners of the heat-insulating baffle 5 are designed into round corners, so that stress concentration is effectively avoided, and the heat-insulating baffle is prevented from being burst due to cold and heat alternation.
In summary, the embodiment of the application provides a valve heat-insulating device of an epitaxial furnace and the epitaxial furnace, wherein, the valve heat-insulating device of the epitaxial furnace can utilize the driving mechanism to drive the heat-insulating baffle 5 to move according to the running state of the reaction chamber 1 so as to shield or open a transmission port 21 on a flange 2 between a transmission valve 3 and the reaction chamber 1, thereby reducing the temperature rise of the transmission valve 3, effectively avoiding the service life of a valve plate of the transmission valve 3 due to high temperature loss, and effectively reducing the influence of the temperature in a high Wen Duichuan transmission chamber in the reaction chamber 1.
In the description of the present specification, reference to the terms "one embodiment," "certain embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
What has been described above is merely some embodiments of the present invention. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit of the invention.
Claims (8)
1. A valve insulation device for an epitaxial furnace, mounted on the outlet end of a reaction chamber (1) of the epitaxial furnace, said device comprising:
the flange (2) is used for connecting the reaction chamber (1) and the transmission valve (3) of the epitaxial furnace, and a transmission port (21) for feeding and discharging the substrate is arranged on the flange (2);
characterized in that the device further comprises:
the heat insulation baffle plate (5) is movably arranged on one side of the flange (2) close to the reaction chamber (1);
the driving mechanism is arranged on the flange (2) and connected with the heat insulation baffle plate (5) and is used for driving the heat insulation baffle plate (5) to move according to the running state of the reaction chamber (1) so as to shade or open the transmission port (21);
the outlet end of the reaction chamber (1) is provided with a flange groove (11), one side of the flange (2) facing the flange groove (11) is provided with a boss (25), the side surface of the boss (25) is matched with the flange groove (11), and the heat insulation baffle (5) is arranged in the flange groove (11);
the heat insulation baffle (5) is provided with a shielding panel (53) for shielding the transmission port (21) and a conveying port (52) for communicating the transmission port (21).
2. The valve heat insulating apparatus of an epitaxial furnace according to claim 1, wherein the driving mechanism comprises:
a driving motor (41) fixed on the flange (2);
and the two ends of the eccentric component (42) are respectively connected with the driving motor (41) and the heat insulation baffle (5), and the eccentric component (42) is driven by the driving motor (41) to eccentrically rotate so as to drive the heat insulation baffle (5) to shield or open the transmission port (21).
3. Valve heat insulation device of an epitaxial furnace according to claim 2, characterized in that the heat insulation baffle (5) is provided with a hanging hole (51), and the hanging hole (51) is movably connected with one end of the eccentric assembly (42).
4. Valve heat insulation device of an epitaxial furnace according to claim 1, characterized in that the flange (2) has a water cooling cavity (22), the water cooling cavity (22) being connected with a water inlet (23) for inputting cooling water and a water outlet (24) for outputting cooling water.
5. Valve insulation device for an epitaxial furnace according to claim 1, characterized in that the side of the insulation barrier (5) facing away from the flange (2) is provided with a mirror layer.
6. An epitaxial furnace, the epitaxial furnace comprising:
a reaction chamber (1) for performing epitaxial growth;
the transmission valve (3) is connected with the reaction chamber (1) through a flange (2) and is used for connecting the reaction chamber (1) and the transmission chamber of the epitaxial furnace;
a transmission port (21) for feeding and discharging the substrate is arranged on the flange (2);
the epitaxial furnace is characterized by further comprising:
the heat insulation baffle plate (5) is movably arranged on one side of the flange (2) close to the reaction chamber (1);
the driving mechanism is arranged on the flange (2) and connected with the heat insulation baffle plate (5) and is used for driving the heat insulation baffle plate (5) to move according to the running state of the reaction chamber (1) so as to shade or open the transmission port (21).
7. An epitaxial furnace according to claim 6, characterized in that at least two corner ends are in contact with the side walls of the flange groove (11) when the heat-insulating barrier (5) is driven to move to the highest and/or lowest position by the driving mechanism.
8. An epitaxial furnace according to claim 6, characterized in that the corner ends of the insulating baffles (5) are rounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210438710.7A CN114775045B (en) | 2022-04-21 | 2022-04-21 | Valve heat insulation device of epitaxial furnace and epitaxial furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210438710.7A CN114775045B (en) | 2022-04-21 | 2022-04-21 | Valve heat insulation device of epitaxial furnace and epitaxial furnace |
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| CN114775045A CN114775045A (en) | 2022-07-22 |
| CN114775045B true CN114775045B (en) | 2023-07-25 |
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| US3219331A (en) * | 1961-12-18 | 1965-11-23 | Illinois Nat Bank & Trust Co | Heat treating furnace |
| JPH06181176A (en) * | 1992-12-14 | 1994-06-28 | Fuji Electric Co Ltd | Semiconductor producing system |
| JP3189512B2 (en) * | 1993-06-30 | 2001-07-16 | いすゞ自動車株式会社 | Subchamber heat shield structure for subchamber engine |
| JP2005299990A (en) * | 2004-04-09 | 2005-10-27 | Daiichi Kiden:Kk | High temperature heating device |
| CN101270959B (en) * | 2007-03-21 | 2010-05-19 | 中国科学院理化技术研究所 | Quick reaction synthesis type high temperature atmosphere stove and method for synthesizing ceramic powder |
| CN101591803B (en) * | 2008-05-28 | 2011-05-11 | 中国科学院半导体研究所 | High-temperature carborundum double-chamber hot wall type epitaxial growth device |
| CN201634760U (en) * | 2010-01-15 | 2010-11-17 | 复旦大学 | MOCVD (Metal Organic Chemical Vapor Deposition) reactor separated from heater and provided with rotary substrate |
| CN107435165A (en) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | A kind of epitaxial reaction chamber and Chemical Vapor-Phase Epitaxy equipment |
| CN210196793U (en) * | 2019-07-08 | 2020-03-27 | 青岛西海岸市政工程有限公司 | Seepage-proofing flange structure for improving quality of heat exchange station heating power pipeline joint |
| CN112680785B (en) * | 2020-11-30 | 2022-11-04 | 晶科能源股份有限公司 | Novel single crystal furnace |
| CN113611637A (en) * | 2021-08-31 | 2021-11-05 | 北京北方华创微电子装备有限公司 | Exhaust device and semiconductor heat treatment equipment |
| CN113897674B (en) * | 2021-10-12 | 2022-11-04 | 季华实验室 | Multi-cavity silicon carbide epitaxial equipment and reaction chamber mechanism thereof |
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