CN201629336U - Groove schottky barrier rectifier - Google Patents
Groove schottky barrier rectifier Download PDFInfo
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- CN201629336U CN201629336U CN2010201311715U CN201020131171U CN201629336U CN 201629336 U CN201629336 U CN 201629336U CN 2010201311715 U CN2010201311715 U CN 2010201311715U CN 201020131171 U CN201020131171 U CN 201020131171U CN 201629336 U CN201629336 U CN 201629336U
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- schottky barrier
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Abstract
The utility model relates to a groove schottky barrier rectifier, which comprises a semiconductor substrate, a first conduction-type underlayer and a first conduction-type drift region. One groove or a plurality of grooves extend into the first conduction-type drift region from a first main surface to define one table top portion or a plurality of table top portions; an insulating oxidation layer is covered on the inner wall of each groove; a first electrode is deposited inside the groove covered with the insulating oxidation layer; the first conduction-type drift region is provided with a second conduction-type surrounding layer corresponding to the bottom of each groove; the bottom of the groove is covered by the second conduction-type surrounding layer; a first metal layer is deposited above the semiconductor substrate; the first metal layer is in ohmic contact with the first electrode; a schottky junction is formed by the first metal layer and the table top portions; and a second metal layer is covered on a second main surface of the semiconductor substrate. The groove schottky barrier rectifier has low manufacturing cost and reduces reverse leakage current of schottky rectifiers.
Description
Technical field
The utility model relates to a kind of Schottky barrier rectifier, especially a kind of groove-shaped Schottky barrier rectifier.
Background technology
Rectifier need show as low resistive state for forward current usually, and shows as high-impedance state during for reverse current, thereby guarantees that rectifier reduces power consumption penalty as much as possible when forward conduction is worked, at the reverse leakage current that reduces as much as possible when withstand voltage.Schottky barrier is different from PN junction, is to utilize the unipolarity charge carrier that crosses contact-making surface between metal and semiconductor junction to come transmission current; Choose different metals or different semiconductors can obtain corresponding different barrier height, its characteristic is therefore to be widely used in rectifier to flow through bigger forward current than low-loss.
The ability of Schottky barrier semiconductor device forward conduction electric current depends on the size of forward conduction voltage drop, and forward conduction voltage drop is mainly determined jointly by the resistance of the forward voltage drop between metal and semiconductor junction, semiconductor regions and the contact resistance between semiconductor substrate and its back side cathodic metal.After selected metal and semiconductor species, just need reduce forward conduction voltage drop by the contact resistance that reduces semiconductor regions resistance and semiconductor substrate and its back side cathodic metal as much as possible, semiconductor substrate and its back side cathodic metal are generally ohmic contact, resistance is less, thereby by increasing the impurity concentration of semiconductor layer, reduce the resistance that its thickness just can effectively reduce semiconductor regions, thereby reduce the forward conduction voltage drop of Schottky barrier semiconductor device.
Yet, in order to improve the oppositely withstand voltage of Schottky barrier semiconductor device, reduce reverse leakage current, need to reduce the impurity concentration of semiconductor layer again, increase its thickness.
As mentioned above, there are the relation of compromise each other in the forward conduction voltage drop of Schottky barrier semiconductor device and reverse leakage current.Disclose a kind of groove-shaped Schottky rectifier structure among the patent ZL02811144.3, improved this tradeoff.Schottky rectifier structure shown in patent ZL02811144.3 accompanying drawing 3, in semiconductor substrate with two relative interareas, its top is the first conduction type drift region of low doping concentration, its upper surface is first interarea, the bottom of described semiconductor substrate is the first conductivity type substrate layer of high-dopant concentration, its lower surface is second interarea, and one or more grooves are extended into the described first conduction type drift region and limited one or more table top portion thus by described first surface; Described grooved inner surface growth has insulating barrier, be filled with first electrode in the described groove, described groove and be coated with the first metal layer above the table top portion, the first metal layer and the described first electrode ohmic contact, simultaneously with the surperficial Schottky contacts of described table top portion, form the Schottky barrier of certain altitude, the first metal layer becomes the anode of Schottky barrier semiconductor device, in the described second interarea surface coverage second metal level is arranged, and forming ohmic contact with second interarea, second metal level becomes the negative electrode of Schottky barrier semiconductor.Owing in the first conduction type drift region groove is set, when Schottky barrier semiconductor device applies reverse voltage, have the electric charge coupling effect between adjacent trenches, the position of maximum field intensity is displaced downwardly near the channel bottom by the surperficial schottky junction place in the common plane Schottky junction structure.The reduction of schottky junction place electric field strength makes reverse leakage current significantly reduce than common plane Schottky barrier semiconductor device.
Yet, as the disclosed structure of patent ZL02811144.3, owing to adopt groove structure, and gash depth extends to lightly doped drift region, therefore near the electric field strength channel bottom can reach peak value, and the pattern of the uniformity of gash depth and channel bottom all can have a direct impact near electric field it; When fluctuation appearred in groove processing technology, the reverse withstand voltage and leakage current of device will occur than great fluctuation process.Therefore, patent CN101114670A discloses a kind of follow-on trench schottky barrier semiconductor device, its architectural feature is on the basis of the described structure of patent ZL02811144.3, gash depth is extended to the first conductivity type substrate layer of high-dopant concentration, shown in patent CN101114670A accompanying drawing 1.Because groove stretches to the substrate layer of high-dopant concentration, therefore when device applied direction voltage, the depletion layer of channel bottom was cut off by the substrate layer of high concentration, shown in patent CN101114670A accompanying drawing 2; Therefore electric field can too not concentrated herein and increase, thereby has improved the rough sledding among the patent ZL02811144.3.
Yet, because rectifier need bear higher back-pressure usually, therefore need usually to select thicker drift region to realize, the device of 100V for example, its drift region thickness reaches 7 microns to I haven't seen you for ages usually, therefore if think that gash depth is deep to substrate layer, at least groove wants etching dark above 7 microns, and in order to improve the device integrated level, the width of groove again can not be excessive, so the darker degree of depth has just been brought bigger realization difficulty for trench etch process with narrower width, in fact a lot of etching groove capacities of equipment all can be subject to this.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of groove-shaped Schottky barrier rectifier is provided, the reverse leakage current that it is cheap for manufacturing cost, as to have reduced Schottky rectifier.
The technical scheme that provides according to the utility model, described groove-shaped Schottky barrier rectifier, on the cross section of described Schottky barrier rectifier, comprise semiconductor substrate with two relative interareas, be positioned at first conductivity type substrate of semiconductor substrate bottom and be positioned at the first conduction type drift region on semiconductor substrate top, described first conductivity type substrate is in abutting connection with the first conduction type drift region; The surface of described first conductivity type substrate is second interarea of semiconductor substrate, and the surface of the described first conduction type drift region is first interarea of semiconductor substrate; The doping content of the described first conduction type drift region is lower than the doping content of first conductivity type substrate; Its innovation is:
One or more grooves extend into to the first conduction type drift region from described first interarea, and limit one or more table top portion on top, the first conduction type drift region; Be coated with insulating oxide on the described trench wall, deposit first electrode in the described groove that is coated with insulating oxide; The described first conduction type drift region is provided with the second conduction type embracing layer corresponding to the bottom land of groove, and the described second conduction type embracing layer coats the bottom land of described groove; Described semiconductor substrate is deposited with the first metal layer corresponding to first interarea top, and described the first metal layer and first electrode be ohmic contact mutually; Described the first metal layer contacts with the surface of table top portion, forms schottky junction; Be coated with second metal level on second interarea of described semiconductor substrate, described second metal level and first conductivity type substrate be ohmic contact mutually.
Described first electrode comprises conductive polycrystalline silicon.Described trench wall forms insulating oxide by heat growth or deposit.Described the first metal layer is provided with anode tap.Described second metal level is provided with cathode terminal.
Described " first conduction type " and " second conduction type " are among both, and for N type Schottky barrier rectifier, first conduction type refers to the N type, and second conduction type is the P type; For P type Schottky barrier rectifier, first conduction type is just in time opposite with N type Schottky barrier rectifier with the type of the second conduction type indication.
Advantage of the present utility model: 1, the second conduction type embracing layer is set by bottom land at groove, reduced Schottky barrier rectifier anti-leakage current and forward conduction voltage drop partially, improved the puncture voltage of Schottky barrier rectifier.2, manufacture method is simple, and is easy to operate, cheap for manufacturing cost.
Description of drawings
Fig. 1～6 are the cutaway view of the concrete implementing process of the utility model, wherein:
Fig. 1 is the cutaway view of semiconductor substrate.
Fig. 2 is the cutaway view behind the formation groove in the first conduction type drift region.
Fig. 3 is the cutaway view behind the formation second conduction type embracing layer in the first conduction type drift region.
Fig. 4 is the cutaway view that forms in groove behind the insulating oxide and first electrode.
Fig. 5 is the cutaway view after forming the first metal layer on first interarea.
Fig. 6 is the cutaway view after forming second metal level on second interarea.
Fig. 7 is a contrast simulation result schematic diagram of the present utility model.
Embodiment
As Fig. 1～shown in Figure 6: with N type Schottky barrier rectifier is example, and the utility model comprises N type drift region 1, N+ substrate 2, second metal level 3, cathode terminal 4, P type embracing layer 5, hard mask layer 6, anode tap 7, the first metal layer 8, insulating oxide 9, first electrode 10, groove 11 and table top portion 12.
Fig. 6 is the structure cutaway view of described groove-shaped Schottky barrier rectifier.As shown in Figure 6: on the cross section of described Schottky barrier rectifier, described Schottky barrier rectifier comprises semiconductor substrate; Semiconductor substrate comprises N+ substrate 2 and N type drift region 1, and N type drift region 1 is in abutting connection with N+ substrate 2.The doping content of described N type drift region 1 is lower than the doping content of N+ substrate 2.Described semiconductor substrate has two relative interareas, and semiconductor substrate is first interarea corresponding to the surface of N type drift region 1; Semiconductor substrate is second interarea corresponding to the surface of N+ substrate 2, and described second interarea is corresponding with the position of first interarea.Be provided with one or more grooves 11 in the described N type drift region 1, described groove 11 extends into N type drift region 1 from first interarea of semiconductor substrate, and described groove 11 limits one or more table top portion 12 on 1 top, N type drift region.Groove 11 extends into to N type drift region 1 vertically downward from first interarea, and limits the table top portion 12 with " Wm " sectional width on 1 top, N type drift region thus, and the exemplary depth of groove 11 has 0.8 μ m～2.5 μ m approximately; The representative width of " Wm " has 1.0 μ m～2.0 μ m approximately.Groove 11 extends on three-dimensional towards periphery, and extensible be parallel striped, grid-shaped or other similar geometry, thus on three-dimensional, extend to parallel striped by the table top portion 12 that groove 11 limits, rectangle or other similar geometry.
The bottom land of described groove 11 is provided with P type embracing layer 5, and described P type embracing layer 5 coats the bottom land of groove 11.The inwall of described groove 11 is provided with insulating oxide 9, and the method that described insulating oxide 9 utilizes high temperature furnace pipe growth, chemical vapor deposition or high temperature furnace pipe growth to combine with chemical vapor deposition is grown in the inwall of groove 11.The insulating oxide that groove 11 inwalls cover is typically the heat growth and forms the insulating oxide 9 with low relatively oxide-interface defect concentration, and its typical thickness has approximately
In having the groove 11 of insulating oxide 9, the growth of described inwall forms first electrode 10 by the deposit conductive polycrystalline silicon.Deposit the first metal layer 8 on first interarea of described semiconductor substrate, described the first metal layer 8 and first electrode, 10 ohmic contact; The first metal layer 8 is a Schottky Barrier Contact with the surface of table top portion, forms schottky junction; The first metal layer 8 forms the anode electrode of Schottky barrier rectifier; Anode tap 7 is set on the first metal layer 8, is used to connect the power supply that needs rectification.
Be coated with second metal level 3 on the N+ substrate 2 of described semiconductor substrate, described second metal level 3 covers on the N+ substrate 2 by deposit or evaporation process, forms the cathode electrode of Schottky barrier rectifier; On second metal level 3 cathode terminal 4 is set, is used to connect the power end that needs rectification.The material of described semiconductor substrate comprises silicon.
The structure of above-mentioned groove-shaped Schottky barrier rectifier adopts following processing step to realize:
A, provide the first conductive type semiconductor substrate with two relative interareas, described two relative interareas comprise first interarea and second interarea; Described semiconductor substrate is second interarea corresponding to the bottom surface of N+ substrate 2, and semiconductor substrate is first interarea corresponding to the upper surface of N type drift region 1, as shown in Figure 1;
B, on above-mentioned first interarea, the deposit hard mask layer; Described hard mask layer can adopt LPTEOS (plasma-enhanced tetraethyl orthosilicate), thermal oxidation silicon dioxide adds chemical vapour deposition (CVD) silicon dioxide or thermal silicon dioxide adds silicon nitride, forms hard mask by photoetching and anisotropic etching thereafter;
C, optionally shelter and the etching hard mask layer, form the hard mask of etching groove, and etching forms groove 11 on first interarea, described groove 11 is covered by hard mask layer 6 corresponding to the outer remainder of notch, and 11 of described adjacent trenches form table top portion; Described etching groove adopts plasma anisotropic etching, form the trenched side-wall (angle of trenched side-wall and semiconductor substrate is not less than 88 degree) of near vertical, groove 11 degree of depth need be considered the needs of component characteristic parameter, described groove 11 degree of depth are generally 0.8 μ m～2 μ m, and through behind the etching groove, hard mask layer between groove above the table top portion also keeps certain thickness, and concrete thickness need be considered follow-up injection technology condition, as shown in Figure 2;
D, inject P type ion (as the boron ion) on first interarea of above-mentioned semiconductor substrate, the concentration of described injection P type ion is greater than the concentration of N type drift region 1; Because be coated with hard mask layer 6 corresponding to the remainder outside groove 11 notches on semiconductor first interarea, thereby only form P type embracing layer 5 in N type drift region 1, described P type embracing layer 5 is positioned at the bottom land of groove 11; The bottom land of described P type embracing layer 5 coating grooves 11 as shown in Figure 3;
Hard mask layer 6 on e, removal semiconductor substrate first interarea is with his operation of the enterprising Xingqi of first interarea at semiconductor substrate;
F, the method that has insulating oxide 9, described insulating oxide 9 can adopt high temperature furnace pipe growth, chemical vapor deposition or high temperature furnace pipe growth to combine with chemical vapor deposition in above-mentioned groove 11 inner wall surface growth are grown on the inwall of groove 11;
G, in described growth has the groove 11 of insulating oxide 9 the deposit conductive polycrystalline silicon, described conductive polycrystalline silicon is boiler tube growth or chemical vapour deposition (CVD) heavily doped polysilicon, remove the conductive polycrystalline silicon of semiconductor substrate by etching corresponding to first interarea, obtain being positioned at the conductive polycrystalline silicon of groove 11, thereby form first electrode 10, as shown in Figure 4;
In certain embodiments, also can be when the operation of etch polysilicon, the polysilicon except removing groove 11 is also removed the polysilicon of groove 11 internal upper parts, thereafter and remove the insulating oxide 9 that groove 11 internal upper parts do not have groove 11 sidewalls of polysilicon segment;
H, on first interarea of described semiconductor substrate deposited metal, by optionally sheltering and etching sheet metal, form the first metal layer 8; Described the first metal layer 8 and first electrode, 10 ohmic contact, described the first metal layer 8 contacts with the surface of table top portion 12, forms schottky junction; Described the first metal layer 8 contacts with first electrode 10, forms the anode electrode of Schottky barrier rectifier, by anode tap 7 is set on the first metal layer 8, is convenient to the first metal layer 8 and is connected with the power end that needs rectification, as shown in Figure 5;
I, on second interarea of described semiconductor substrate, cover second metal level 3, N+ substrate 2 ohmic contact of described second metal level 3 and semiconductor substrate, form the cathode electrode of Schottky barrier rectifier, by on second metal level 3, cathode terminal 4 being set, be convenient to second metal level 3 and be connected, as shown in Figure 6 with the power end that needs rectification.
As shown in Figure 6, the working mechanism of the utility model groove-shaped Schottky barrier rectifier is: when the anode tap 7 of Schottky barrier rectifier and 4 of cathode terminals apply reverse voltage, the P type embracing layer 5 of N type drift region 1 below groove 11 bottoms constitutes back-biased PN junction, because P type embracing layer 5 concentration are greater than the concentration of N type drift region 1, therefore 1 extension in the N type drift region around the PN junction that anti-depletion layer can be most partially, described bearing of trend comprises horizontal direction.When the depletion layer that PN junction produced below adjacent two groove 11 bottoms contacts in the horizontal direction, the depletion layer that is connected has promptly been blocked the top of N type drift region 1 and the bottom of N type drift region 1, has also blocked simultaneously the reverse leakage circulation flow path of 4 of the anode tap 7 of rectifier and cathode terminals.Because when the P type embracing layer 5 below not having described groove 11 bottoms, oppositely contact with the table top portion 12 surfaces Schottky barrier of formation of the depletion layer that produces of the electric charge coupling of 11 of withstand voltage main dependence adjacent trenches and the first metal layer 8 bears, so trench schottky barrier rectifier of the present utility model can reduce the size of reverse leakage current greatly on the basis of above-mentioned common trench schottky barrier rectifier.As shown in Figure 7: be the simulation architecture schematic diagram of 100V trench schottky barrier rectifier of the present utility model and other trench schottky barrier rectifiers, after below channel bottom, forming P type embracing layer 5 (have among Fig. 2 boron element inject one group) according to structure described in the utility model, contrast does not have the rectifier (device size is identical with the former with all the other process conditions) of second conductive type layer, reverse leakage current is little 5～6 orders of magnitude when reverse biased is 100V, greatly reduce the reverse leakage current of Schottky barrier rectifier, the degree of depth of groove 11 is more shallow simultaneously, reduced the difficulty of processing, simple to operate.
The utility model is provided with P type embracing layer 5 by the bottom land at groove 11, reduced Schottky barrier rectifier anti-leakage current and forward conduction voltage drop partially, improved the puncture voltage of Schottky barrier rectifier.The degree of depth of described groove 11 is more shallow, and manufacture method is simple, and is easy to operate, cheap for manufacturing cost.
Claims (5)
1. groove-shaped Schottky barrier rectifier, on the cross section of described Schottky barrier rectifier, comprise semiconductor substrate with two relative interareas, be positioned at first conductivity type substrate of semiconductor substrate bottom and be positioned at the first conduction type drift region on semiconductor substrate top, described first conductivity type substrate is in abutting connection with the first conduction type drift region; The surface of described first conductivity type substrate is second interarea of semiconductor substrate, and the surface of the described first conduction type drift region is first interarea of semiconductor substrate; The doping content of the described first conduction type drift region is lower than the doping content of first conductivity type substrate; It is characterized in that:
One or more grooves extend into to the first conduction type drift region from described first interarea, and limit one or more table top portion on top, the first conduction type drift region; Be coated with insulating oxide on the described trench wall, deposit first electrode in the described groove that is coated with insulating oxide; The described first conduction type drift region is provided with the second conduction type embracing layer corresponding to the bottom land of groove, and the described second conduction type embracing layer coats the bottom land of described groove; Described semiconductor substrate is deposited with the first metal layer corresponding to first interarea top, and described the first metal layer and first electrode be ohmic contact mutually; Described the first metal layer contacts with the surface of table top portion, forms schottky junction; Be coated with second metal level on second interarea of described semiconductor substrate, described second metal level and first conductivity type substrate be ohmic contact mutually.
2. groove-shaped Schottky barrier rectifier according to claim 1 is characterized in that: described first electrode comprises conductive polycrystalline silicon.
3. groove-shaped Schottky barrier rectifier according to claim 1 is characterized in that: described trench wall forms insulating oxide by heat growth or deposit.
4. groove-shaped Schottky barrier rectifier according to claim 1 is characterized in that: described the first metal layer is provided with anode tap.
5. groove-shaped Schottky barrier rectifier according to claim 1 is characterized in that: described second metal level is provided with cathode terminal.
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| CN2010201311715U CN201629336U (en) | 2010-03-04 | 2010-03-04 | Groove schottky barrier rectifier |
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| CN2010201311715U CN201629336U (en) | 2010-03-04 | 2010-03-04 | Groove schottky barrier rectifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124151A (en) * | 2014-07-14 | 2014-10-29 | 中航（重庆）微电子有限公司 | Groove structure Schottky barrier diode and production method thereof |
| CN107946301A (en) * | 2017-02-24 | 2018-04-20 | 重庆中科渝芯电子有限公司 | The groove-shaped super barrier rectifier and its manufacture method of a kind of Schottky Barrier Contact |
-
2010
- 2010-03-04 CN CN2010201311715U patent/CN201629336U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124151A (en) * | 2014-07-14 | 2014-10-29 | 中航（重庆）微电子有限公司 | Groove structure Schottky barrier diode and production method thereof |
| CN104124151B (en) * | 2014-07-14 | 2017-08-25 | 中航（重庆）微电子有限公司 | A kind of groove structure Schottky-barrier diode and preparation method thereof |
| CN107946301A (en) * | 2017-02-24 | 2018-04-20 | 重庆中科渝芯电子有限公司 | The groove-shaped super barrier rectifier and its manufacture method of a kind of Schottky Barrier Contact |
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Granted publication date: 20101110 Termination date: 20130304 |