CN100589246C - Power MOS field effect pipe with poly-silicon field plate and manufacturing method thereof - Google Patents
Power MOS field effect pipe with poly-silicon field plate and manufacturing method thereof Download PDFInfo
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- CN100589246C CN100589246C CN200810019985A CN200810019985A CN100589246C CN 100589246 C CN100589246 C CN 100589246C CN 200810019985 A CN200810019985 A CN 200810019985A CN 200810019985 A CN200810019985 A CN 200810019985A CN 100589246 C CN100589246 C CN 100589246C
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Abstract
A power MOS field effect transistor with polysilicon field plate and a manufacture method thereof are characterized in that a terminal protection structure of the periphery of an active region of theMOS field effect transistor is improved in the following aspects: 1. a P<-> trap of the periphery of edged unit cells of a unit cell array is directly treated as a field limiting ring; 2. a field limiting ring P<-> area, a cut-off ring P<-> area and a P<-> trap of the unit cell array are treated as the same manufacturing layer which is formed by P-shaped doping simultaneously; 3. field oxygen is omitted, the structure of the field plate is changed in composition and composed by a grid silica layer and polysilicon; 4. the polysilicon in the field plate is treated as a barrier layer injected with P-shaped impurity ions, and the field limiting ring P<-> area, the cut-off ring <-> area and the P<-> trap of the unit cell are formed directly; 5. N-shaped doping is carried out after P-shaped doping, thus causing upper parts of the field limiting ring P<-> area, the cut-off ring P<-> area and the P<-> trap of the unit cell array have an N<+> area. The power MOS field effect transistor with polysilicon field plate and a manufacture method thereof of the invention have the advantages of saving the photoglith plate of the active region, the photoglith plate of the field limiting ring and thephotoglith plate with three layers injected in the active region, on the premise of guaranteeing performance of products, reducing times of photoetching, reducing manufacture cost greatly, which are suitable for manufacturing the power MOS field effect transistor with low cost on a large scale.
Description
Technical field
The present invention relates to a kind of MOS field effect tube and manufacture method thereof.Be particularly related to the MOS field effect tube and the manufacture method thereof that have the polysilicon field plate.This MOS field effect tube can be N or P groove type MOS field effect transistor, also can be N or P plane metal-oxide-semiconductor field effect transistor, and the voltage that it can bear is at mesolow scope (20V＜voltage＜300V).
Background technology
MOS field effect tube uses existing historical for many years, the improvement that its design and manufacture method are continuing always.On performance, mainly be towards low on-resistance (Rdson), high withstand voltage, high-frequency direction develops.
Terminal protection structure is an important link of metal-oxide-semiconductor field effect transistor design.MOS field effect tube, need bear higher reverse voltage during work, the surface potential that is positioned between each the unit cell array in parallel of active area in the middle of the device is roughly the same, and be positioned at the unit cell at active area edge (being terminal) and the current potential of substrate surface differs greatly, thereby the surface field that often causes the outer ring unit cell is too concentrated the edge breakdown that causes device.Therefore, need increase terminal protection structure, reduce the terminal electric field density, play and improve the withstand voltage effect of metal-oxide-semiconductor field effect transistor in the outer ring of unit cell array.
For the MOS field effect tube greater than 20V, its terminal protection structure is from inside to outside formed by field limiting ring, field plate with by ring.And manufacturing field limiting ring and active area need carry out Twi-lithography.Present technical merit is made a kind of power groove type metal-oxide-semiconductor field effect transistor, needs to use seven reticle altogether, and finishes by following technological process:
The first step, the field oxide of on semi-conductor silicon chip, growing;
Second step by photoetching, defined active area, and field oxide is carried out etching (reticle 1);
The 3rd step by photoetching, defined the field limiting ring injection zone, carried out the doping of P type and formed field limiting ring P
+District's (reticle 2);
The 4th step in semi-conductor silicon chip superficial growth hard mask oxide layer, by photoetching, defined the trench etching zone, and carried out hard mask oxide layer corrosion (photolithography plate 3)
In the 5th step, carry out the deep trench silicon etching based on hard mask oxide layer;
In the 6th step, the growth gate oxide is in gate oxide surface deposition conductive polycrystalline silicon;
The 7th step by photoetching, defined the etching polysilicon zone, carried out etching polysilicon (reticle 4);
In the 8th step, carry out the p type impurity ion in whole semi-conductor silicon chip surface and inject, and push away the P that trap forms the unit cell array
-Trap;
The 9th step by photoetching, defined the source region, carried out N type foreign ion and injected, and push away trap formation N
+District's (reticle 5);
The tenth step is in whole semi-conductor silicon chip surface deposition dielectric layer;
In the 11 step, by photoetching, define the contact hole zone, and carry out oxide layer etching (reticle 6);
In the 12 step, deposited metal by photoetching, defines etch areas, carries out metal etch (reticle 7).
But fierceness along with market competition, requirement to cost control is also more and more higher, how under the situation that does not reduce device performance (as feature conducting resistance (Specific Rdson), withstand voltage, device capacitor etc.), reduce manufacturing cost and become important research direction at present.
The control manufacturing cost has two main directions, and the one, reduce chip area, on onesize silicon chip, obtain more chip.Other direction is to reduce the photoetching number of times, and production cost is directly proportional with the photoetching number of times, so use the photoetching number of times of trying one's best few, can reduce production cost significantly.
Summary of the invention
The invention provides a kind of MOS field effect tube and manufacture method thereof that has the polysilicon field plate; its objective is will be under the prerequisite that guarantees not influence device performance (as feature conducting resistance (Specific Rdson), withstand voltage etc.); reduce the photoetching number of times by optimal design, thereby reduce the manufacturing cost of device terminal protection structure.
For achieving the above object; first kind of technical scheme that metal-oxide-semiconductor field effect transistor of the present invention adopts is: a kind of MOS field effect tube that has the polysilicon field plate on top plan view, is unit cell array in parallel in the middle of this device; the periphery of unit cell array is provided with terminal protection structure, and its innovation is:
On top plan view; described terminal protection structure is made up of by ring a field limiting ring, field plate and one; peripheral from the edge unit cell of unit cell array; terminal protection structure is pressed field limiting ring, field plate from inside to outside, is ended the setting of ring order, and the peripheral field limiting ring that directly connects of edge unit cell.
On the cross section, field limiting ring is positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip, it is made of the first conduction type doped region and the second conduction type doped region, and wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region.
On the cross section, field plate is made of grid silicon oxide layer and conductive polycrystalline silicon stack, and grid silicon oxide layer is positioned on the first conductive type epitaxial layer surface of semi-conductor silicon chip, and conductive polycrystalline silicon is positioned on the grid silicon oxide layer.
On the cross section, be positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip by ring, it is made of the first conduction type doped region and the second conduction type doped region, wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region, and metal level connects into equipotential with the first conduction type doped region and the second conduction type doped region.
On the cross section, field limiting ring, be same manufacturings layer by ring and the unit cell array three second conduction type doped region separately, their the second conductive type impurity doping depth is identical; Field limiting ring, be same manufacturings layer by ring and the unit cell array three first conduction type doped region separately, their the first conductive type impurity doping depth is identical; Conductive polycrystalline silicon in the field plate is at field limiting ring and above zone between the ring, and the barrier layer of injecting as first conduction type and the second conductive type impurity ion.
For achieving the above object; second kind of technical scheme that metal-oxide-semiconductor field effect transistor of the present invention adopts is: a kind of MOS field effect tube that has the polysilicon field plate on top plan view, is unit cell array in parallel in the middle of this device; the periphery of unit cell array is provided with terminal protection structure, and its innovation is:
On top plan view; described terminal protection structure is made up of by ring at least two field limiting rings, the field plate identical with field limiting ring quantity and one; peripheral from the edge unit cell of unit cell array; terminal protection structure is pressed field limiting ring, field plate, field limiting ring, field plate from inside to outside; be rule setting at last by ring, and the peripheral field limiting ring that directly connects of edge unit cell.
On the cross section, field limiting ring is positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip, it is made of the first conduction type doped region and the second conduction type doped region, and wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region.
On the cross section, field plate is made of grid silicon oxide layer and conductive polycrystalline silicon stack, and grid silicon oxide layer is positioned on the first conductive type epitaxial layer surface of semi-conductor silicon chip, and conductive polycrystalline silicon is positioned on the grid silicon oxide layer.
On the cross section, be positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip by ring, it is made of the first conduction type doped region and the second conduction type doped region, wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region, and metal level connects into equipotential with the first conduction type doped region and the second conduction type doped region.
On the cross section, field limiting ring, be same manufacturings layer by ring and the unit cell array three second conduction type doped region separately, their the second conductive type impurity doping depth is identical; Field limiting ring, be same manufacturings layer by ring and the unit cell array three first conduction type doped region separately, their the first conductive type impurity doping depth is identical; Conductive polycrystalline silicon in the field plate is at two adjacent field limiting rings and field limiting ring and above zone between the ring, and the barrier layer of injecting as first conduction type and the second conductive type impurity ion.
Related content in first kind and second kind technical scheme of above-mentioned MOS field effect tube is explained as follows:
1, described " edge unit cell " is meant the unit cell of unit cell array edges position.Described " from inside to outside " is meant that with the unit cell array be the direction that spread to the periphery at the center.Described " in the middle of this device " is meant the zone of device unit cell array, or is called active area, and it is relative peripheral terminal protection structure.Described " first conduction type " and " second conduction type " refer to the N type for N type metal-oxide-semiconductor field effect transistor first conduction type among both, and second conduction type refers to the P type; Just in time opposite for P type metal-oxide-semiconductor field effect transistor.
2, according to the above-mentioned first or second described MOS field effect tube of technical scheme, its innovation is:
(1) described field limiting ring, by the ring and the unit cell array three second conduction type doped region separately, form by the same second conduction type doping process.
(2) described field limiting ring, by the ring and the unit cell array three first conduction type doped region separately, form by the same first conduction type doping process.
(3) conductive polycrystalline silicon in conductive polycrystalline silicon in the described field plate and the unit cell array is formed by same polysilicon deposit and etching polysilicon process.
(4) conductive polycrystalline silicon in the described field plate formed before first conductive type impurity and the second conductive type impurity ion inject, and the barrier layer of injecting as terminal protection zone first conductive type impurity and the second conductive type impurity ion.
For reaching said structure, the technical scheme that method for making MOS field effect tube of the present invention adopts is:
Groove type power MOS field effect transistor manufacture method of the present invention comprises following process steps:
A) provide the semi-conductor silicon chip with two relative interareas of first conduction type;
B) on first interarea, form first silicon oxide layer;
C) optionally shelter and etching first silicon oxide layer, form the deep plough groove etched hard mask of first silicon oxide layer;
D) form deep trench in the first interarea etching with the hard mask of first silicon oxide layer;
E) form second silicon oxide layer, i.e. grid silicon oxide layer in first interarea and deep trench surface;
F) form conductive polycrystalline silicon floor in second silicon oxide layer surface;
G) optionally shelter and the etching conductive polysilicon layer conductive polycrystalline silicon of deep trench in conductive polycrystalline silicon in the formation field plate and the unit cell array;
H) in first interarea, carry out the second conductive type impurity ion and inject, and form field limiting ring, end ring and the unit cell array three second conduction type doped region separately by knot with conductive polycrystalline silicon barrier layer;
I) in first interarea, carry out the first conductive type impurity ion and inject, and form field limiting ring, end ring and the unit cell array three first conduction type doped region separately by knot with conductive polycrystalline silicon barrier layer;
J) form the 3rd silicon oxide layer in first interarea, the 3rd silicon oxide layer is an interlayer dielectric layer;
K) optionally shelter and etching the 3rd silicon oxide layer, form the contact hole of unit cell array and end the contact hole that encircles, the position below contact hole deep etching to the first conduction type doped region lower surface;
L) form metal level in the 3rd silicon oxide layer surface;
M) optionally shelter and etching sheet metal.
Design concept of the present invention is described below: for MOS field effect tube, must bear reverse withstand voltagely when it is used, metal-oxide-semiconductor field effect transistor can be at its edge designs terminal protection structure usually.Terminal protection structure mainly contains field plate, field limiting ring and ends ring and form, and wherein field plate and field limiting ring are used in combination and improve the surface breakdown characteristic.Field plate can suppress the low puncture that surface charge causes effectively, and field limiting ring then can slow down the PN junction puncture that the planar junction curvature effect causes.Field plate and field limiting ring be used in combination the whole withstand voltage properties that can significantly improve MOS field effect tube.And design mainly is to collect surface charge by ring, avoids causing that surperficial transoid causes electric leakage.
The inventive point of MOS field effect tube of the present invention and manufacture method thereof is the terminal protection structure design and makes that the optimization part of its relative prior art (seeing shown in Figure 1) embodies a concentrated expression of the following aspects:
(1) field limiting ring, be same manufacturings layer by the ring and unit cell array three's the second conduction type doped region, form simultaneously by the doping of second conductive type impurity in the mill, the degree of depth is identical.
(2) metal-oxide-semiconductor field effect transistor of the present invention encloses the effect that the second conduction type doped region plays field limiting ring by one of unit cell array outmost turns, simultaneously according to different withstand voltage demands, can adjust the width of the field limiting ring second conduction type doped region.
(3) field plate of the present invention is made up of conductive polycrystalline silicon and grid silicon oxide layer stack.
(4) finish before the making second conduction type doped region of the conductive polycrystalline silicon in the field plate of the present invention, and the barrier layer of injecting as terminal protection zone first conductive type impurity and the second conductive type impurity ion.
Its advantage of the relative prior art of the present invention and effect be mainly reflected in following some:
1, the present invention is modified into field plate structure by grid silicon oxide layer and conductive polycrystalline silicon and forms, wherein, conductive polycrystalline silicon is both as the part of field plate, also as second conduction type doped region of field limiting ring and the injection barrier layer of ending the second conduction type doped region of ring, therefore saved a silicon oxide layer structure, reduce the photoetching number of times, shortened manufacturing time, reduced manufacturing cost.And original field plate structure need be done the primary field oxidation because a silicon oxide layer is arranged, photoetching, and corrosion could form required field plate.And the present invention has used polysilicon films to form field plate cleverly, and makes it become the injection barrier layer of the terminal protection structure zone first conduction type doped region and the second conduction type doped region.
2, the present invention with field limiting ring, by the ring and unit cell array three finish in the same step of the second conduction type doped region separately, reduced photoetching number of times and injection and thermal process, shortened manufacturing time, saved cost.And original field limiting ring is made separately, need to do a photoetching, injects and pushes away trap, could form required field limiting ring.
3, only need in the MOS field effect tube manufacture process of the present invention to use four photolithography plates, and can bear reverse voltage above 20V-300V.And the groove type power MOS field effect transistor of existing 80V shown in Figure 1 needs 7 photolithography plates usually.This shows that the present invention has optimized structure greatly, reduced the photoetching number of times, reduced manufacturing cost.
Now that manufacture method of the present invention and the contrast of existing manufacture method is as follows:
From the form of above contrast, can clearly find out following effect:
The first, manufacture method of the present invention has been saved active area reticle and corresponding technology;
The second, manufacture method of the present invention has been saved field limiting ring photolithography plate and corresponding technology;
The 3rd, manufacture method of the present invention has been saved the source electrode photolithography plate and has been become and corresponding technology;
Usually, the manufacturing cost of groove type power MOS field effect transistor can be simplified to the photoetching number of times and calculate, increase a photoetching and increase by 10～15% cost approximately, therefore the present invention has reduced third photo etching and approximately can reduce cost about 30～40%, and this effect for the market competitiveness that improves the groove type power MOS field effect transistor is significant.
Description of drawings
Accompanying drawing 1 is existing power groove type metal-oxide-semiconductor field effect transistor generalized section;
Accompanying drawing 2 is the embodiment of the invention one a power groove type metal-oxide-semiconductor field effect transistor schematic top plan view;
Accompanying drawing 3 is the embodiment of the invention one a power groove type metal-oxide-semiconductor field effect transistor schematic cross-section;
Accompanying drawing 4～9 is that the embodiment of the invention one power groove type metal-oxide-semiconductor field effect transistor technology is made schematic flow sheet;
Accompanying drawing 10 is the embodiment of the invention two power groove type metal-oxide-semiconductor field effect transistor schematic cross-sections.
In the above accompanying drawing: 1, unit cell array; 2, field limiting ring; 3, field plate; 4, by ring; 5, edge unit cell; 6, field limiting ring P
-The district; 7, N
-The type epitaxial loayer; 8, grid silicon oxide layer; 9, conductive polycrystalline silicon; 10, by ring P
-The district; 11, the P of unit cell array
-Trap; 12, N
+The type substrate; 13, deep trench conductive polycrystalline silicon; 14, dielectric layer; 15, metal level; 16, a silicon oxide layer; 17, photoresist.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: a kind of power groove type metal-oxide-semiconductor field effect transistor
As shown in Figure 2, on top plan view, be unit cell array 1 in parallel in the middle of this metal-oxide-semiconductor field effect transistor, the periphery of unit cell array 1 is provided with terminal protection structure, and this metal-oxide-semiconductor field effect transistor also is provided with grid (not drawing among the figure), and the position of this grid requires to determine according to encapsulation.Described terminal protection structure is made up of by ring 4 field limiting ring 2, field plate 3 and one.
As shown in Figure 3, peripheral from active area edge unit cell 5 on the cross section, terminal protection structure is pressed field limiting ring 2, field plate 3 from inside to outside, is ended ring 4 order settings, and the edge unit cell 5 peripheral field limiting rings 2 that directly connect.
By encircling 4 by top band N
+Ending of district encircles P
-District 10 constitutes, by ring P
-District 10 is positioned at the N of semi-conductor silicon chip
-On the type epitaxial loayer 7, metal level respectively will be by ring P
-District 10 and N
+The district connects into equipotential (not drawing among the figure).
Semi-conductor silicon chip N
-Field limiting ring P on the type epitaxial loayer 7
-Distinguish 6, end ring P
-The P of district 10 and unit cell array
-Trap 11 is same manufacturing layer, and their p type impurity doping depth is identical.Field limiting ring P
-Distinguish 6, end ring P
-The P of district 10 and unit cell array
-Trap 11 three tops with N
+The district is same manufacturing floor, and their the N type doping impurity degree of depth is identical.Conductive polycrystalline silicon 9 in the field plate 3 is as the barrier layer that the p type impurity ion injects and N type foreign ion injects, and this barrier layer is positioned at field limiting ring P
-The district 6 with by the ring P
-The top in zone between the district 10.
Referring to Fig. 4～shown in Figure 9, present embodiment one power groove type metal-oxide-semiconductor field effect transistor manufacture method comprises following process steps:
A) the hard mask growth of silicon.Wherein hard mask can adopt LPTEOS or thermal oxidation silicon dioxide to add chemical vapour deposition (CVD) silicon dioxide or thermal oxidation silicon dioxide adds silicon nitride.By photoetching and anisotropic etching be formed with the hard mask of deep trench of source region unit cell thereafter.
B) deep plough groove etched.Groove adopts anisotropic etching to form vertical sidewall (sidewall and silicon chip surface are 88 degree usually).See Fig. 4 active area unit cell array deep trench.
C) gate oxidation/polysilicon deposit.In N-type epitaxial loayer 7 superficial growth grid silicon oxide layers 8 (see figure 4)s of band deep trench, then at grid silicon oxide layer 8 surface deposition conductive polycrystalline silicon floors.Existing common process is adopted in gate oxidation/polysilicon deposit.
D) polysilicon layer photoetching/etching polysilicon.Specifically be that conductive polycrystalline silicon floor is carried out photoetching and etching, left conductive polycrystalline silicon forms the conductive polycrystalline silicon 9 in the field plate 3 and deep trench conductive polycrystalline silicon 13 (see figure 5)s of active area unit cell simultaneously.
E) P of unit cell array
-Trap, by the ring P
-District and field limiting ring P
-The district is injected.Specifically be to carry out the p type impurity ion with the conductive polycrystalline silicon in the field plate 39 as the barrier layer to inject (being injected to boron usually), and push away trap, formed have same depth by ring P
-District 10, field limiting ring P
-The P of district 6 and unit cell array
-Trap 11 (see figure 6)s.
F) N type source layer injects (N
+Inject), annealing.Specifically be to carry out N type foreign ion with the conductive polycrystalline silicon in the field plate 39 as the barrier layer to inject (ion that injects is arsenic As usually), form simultaneously after the annealing same depth by ring P
-District 10, field limiting ring P
-The P of district 6 and unit cell array
-The N on trap 11 three tops
+District's (see figure 7).
G) dielectric layer deposit.See Fig. 8, dielectric layer 14 deposits can be chosen boron-phosphorosilicate glass (BPSG) or phosphorosilicate glass (PSG) or silex glass (USG) etc.
H) hole photoetching/etching.Specifically be that hole depth is dug to N to active area, by the hole photoetching/corrosion that encircles and conductive polycrystalline silicon is drawn
+The district is with upper/lower positions, allows the hole can be directly and P
-The trap (see figure 9) that links to each other.
J) metal level deposit/photoetching/etching.Prior art is adopted in the formation of hole and metal level 15 interconnection lines, metal filledly can adopt tungsten plug technology or direct metal fill process.
The present invention has saved the active area reticle, three layer photoetching plates are injected in field limiting ring reticle and source region, under the prerequisite that guarantees properties of product, have reduced the photoetching number of times, reduce manufacturing cost greatly, applicable to the low-cost power groove type metal-oxide-semiconductor field effect transistor of making in enormous quantities.
Embodiment two: a kind of MOS field effect tube
As shown in figure 10; the difference of present embodiment and embodiment one is: terminal protection structure is made up of by ring 4 two field limiting rings 2, two blocks of field plates 3 and one; peripheral from active area edge unit cell 5; terminal protection structure is pressed field limiting ring 2, field plate 3, field limiting ring 2, field plate 3 from inside to outside; be rule setting at last by ring 4, and the edge unit cell 5 peripheral field limiting rings 2 that directly connect.Other structure and manufacture method content are identical with embodiment one, no longer are repeated in this description here.
By present embodiment can directly draw terminal protection structure by three field limiting rings 2, three blocks of field plates 3 and one by ring 4 situations about forming.Also can draw terminal protection structure by three above field limiting rings 2, three blocks of above field plates 3 and one by ring 4 situations about forming.
Though above-mentioned explanation is described with N channel groove type metal-oxide-semiconductor field effect transistor, the present invention also goes for P raceway groove groove type MOS field effect transistor, wherein only needs to change P into N, and N should get final product for P.In addition, the present invention is equally applicable to the plane metal-oxide-semiconductor field effect transistor.The present invention is not limited to above-mentioned explanation, but can allow all modifications and variation, wherein different manufacture methods and cause identical with terminal protection structure of the present invention, all within the scope of the invention.
Claims (5)
1, a kind of MOS field effect tube that has the polysilicon field plate on top plan view, is a unit cell array in parallel in the middle of this device, and the periphery of unit cell array is provided with terminal protection structure, it is characterized in that:
On top plan view, described terminal protection structure is made up of by ring a field limiting ring, field plate and one, peripheral from the edge unit cell of unit cell array, terminal protection structure is pressed field limiting ring, field plate from inside to outside, is ended the setting of ring order, and the peripheral field limiting ring that directly connects of edge unit cell;
On the cross section, field limiting ring is positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip, it is made of the first conduction type doped region and the second conduction type doped region, and wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region;
On the cross section, field plate is made of grid silicon oxide layer and conductive polycrystalline silicon stack, and grid silicon oxide layer is positioned on the first conductive type epitaxial layer surface of semi-conductor silicon chip, and conductive polycrystalline silicon is positioned on the grid silicon oxide layer;
On the cross section, be positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip by ring, it is made of the first conduction type doped region and the second conduction type doped region, wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region, and metal level connects into equipotential with the first conduction type doped region and the second conduction type doped region;
On the cross section, field limiting ring, be same manufacturings layer by ring and the unit cell array three second conduction type doped region separately, their the second conductive type impurity doping depth is identical; Field limiting ring, be same manufacturings layer by ring and the unit cell array three first conduction type doped region separately, their the first conductive type impurity doping depth is identical; Conductive polycrystalline silicon in the field plate is at field limiting ring and above zone between the ring, and the barrier layer of injecting as first conduction type and the second conductive type impurity ion.
2, a kind of MOS field effect tube that has the polysilicon field plate on top plan view, is a unit cell array in parallel in the middle of this device, and the periphery of unit cell array is provided with terminal protection structure, it is characterized in that:
On top plan view, described terminal protection structure is made up of by ring at least two field limiting rings, the field plate identical with field limiting ring quantity and one, peripheral from the edge unit cell of unit cell array, terminal protection structure is pressed field limiting ring, field plate, field limiting ring, field plate from inside to outside, be rule setting at last by ring, and the peripheral field limiting ring that directly connects of edge unit cell;
On the cross section, field limiting ring is positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip, it is made of the first conduction type doped region and the second conduction type doped region, and wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region;
On the cross section, field plate is made of grid silicon oxide layer and conductive polycrystalline silicon stack, and grid silicon oxide layer is positioned on the first conductive type epitaxial layer surface of semi-conductor silicon chip, and conductive polycrystalline silicon is positioned on the grid silicon oxide layer;
On the cross section, be positioned at the first conductive type epitaxial layer upper area of semi-conductor silicon chip by ring, it is made of the first conduction type doped region and the second conduction type doped region, wherein, the first conduction type doped region is positioned at the top of the second conduction type doped region, and metal level connects into equipotential with the first conduction type doped region and the second conduction type doped region;
On the cross section, field limiting ring, be same manufacturings layer by ring and the unit cell array three second conduction type doped region separately, their the second conductive type impurity doping depth is identical; Field limiting ring, be same manufacturings layer by ring and the unit cell array three first conduction type doped region separately, their the first conductive type impurity doping depth is identical; Conductive polycrystalline silicon in the field plate is at two adjacent field limiting rings and field limiting ring and above zone between the ring, and the barrier layer of injecting as first conduction type and the second conductive type impurity ion.
3, MOS field effect tube according to claim 1 and 2 is characterized in that:
Described field limiting ring, by the ring and the unit cell array three second conduction type doped region separately, form by the same second conduction type doping process;
Described field limiting ring, by the ring and the unit cell array three first conduction type doped region separately, form by the same first conduction type doping process;
Conductive polycrystalline silicon in conductive polycrystalline silicon in the described field plate and the unit cell array is formed by same polysilicon deposit and etching polysilicon process;
Conductive polycrystalline silicon in the described field plate formed before the first conductive type impurity ion and the second conductive type impurity ion inject, and the barrier layer of injecting as the terminal protection zone first conductive type impurity ion and the second conductive type impurity ion.
4, a kind of method of making according to claim 1 or 2 described MOS field effect tubes is characterized in that comprising following process steps:
A) provide the semi-conductor silicon chip with two relative interareas of first conduction type;
B) on first interarea, form first silicon oxide layer;
C) optionally shelter and etching first silicon oxide layer, form the deep plough groove etched hard mask of first silicon oxide layer;
D) form deep trench in the first interarea etching with the hard mask of first silicon oxide layer;
E) form second silicon oxide layer, i.e. grid silicon oxide layer in first interarea and deep trench surface;
F) form conductive polycrystalline silicon floor in second silicon oxide layer surface;
G) optionally shelter and the etching conductive polysilicon layer conductive polycrystalline silicon of deep trench in conductive polycrystalline silicon in the formation field plate and the unit cell array;
H) in first interarea, carry out the second conductive type impurity ion and inject, and form field limiting ring, end ring and the unit cell array three second conduction type doped region separately by knot with conductive polycrystalline silicon barrier layer;
I) in first interarea, carry out the first conductive type impurity ion and inject, and form field limiting ring, end ring and the unit cell array three first conduction type doped region separately by knot with conductive polycrystalline silicon barrier layer;
J) form the 3rd silicon oxide layer in first interarea;
K) optionally shelter and etching the 3rd silicon oxide layer, form the contact hole of unit cell array and end the contact hole that encircles;
L) form metal level in the 3rd silicon oxide layer surface;
M) optionally shelter and etching sheet metal.
5, according to the manufacture method of the described MOS field effect tube of claim 4, it is characterized in that: described step k), the position below contact hole deep etching to the first conduction type doped region lower surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810019985A CN100589246C (en) | 2008-03-18 | 2008-03-18 | Power MOS field effect pipe with poly-silicon field plate and manufacturing method thereof |
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|---|---|---|---|
| CN200810019985A CN100589246C (en) | 2008-03-18 | 2008-03-18 | Power MOS field effect pipe with poly-silicon field plate and manufacturing method thereof |
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| CN101271898A CN101271898A (en) | 2008-09-24 |
| CN100589246C true CN100589246C (en) | 2010-02-10 |
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| CN200810019985A Expired - Fee Related CN100589246C (en) | 2008-03-18 | 2008-03-18 | Power MOS field effect pipe with poly-silicon field plate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102214689B (en) * | 2010-04-06 | 2012-11-07 | 上海华虹Nec电子有限公司 | Terminal protection structure of super junction device and manufacturing method of terminal protection structure |
| CN103035621B (en) * | 2012-05-30 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Super junction metal oxide semiconductor field effect transistor (MOSFET) terminal protection structure |
| CN104795446B (en) * | 2015-04-17 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | Trench gate mosfet and its manufacture method |
| CN108054206A (en) * | 2017-10-24 | 2018-05-18 | 全球能源互联网研究院 | A kind of power device terminal structure of transverse direction structure cell and preparation method thereof |
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