CN201530877U - Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method - Google Patents
Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method Download PDFInfo
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- CN201530877U CN201530877U CN200920042951XU CN200920042951U CN201530877U CN 201530877 U CN201530877 U CN 201530877U CN 200920042951X U CN200920042951X U CN 200920042951XU CN 200920042951 U CN200920042951 U CN 200920042951U CN 201530877 U CN201530877 U CN 201530877U
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- solar energy
- pulling method
- inch silicon
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Abstract
The utility model relates to a production device of a 18 inch silicon signal-crystal for solar energy, concretely a thermal pulling method for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method by a production device for producing the 18 inch silicon signal-crystal for solar energy using the vertical pulling method. The device comprises a shell, a graphite crucible in the center of the shell, a quartz crucible in the graphite crucible, a heating electrode at the perimeter of the graphite crucible and a guide shell arranged at the inner side of the graphite crucible, wherein the length of the heating electric along the upper, lower directions is 120-150mm and the shortest distance between the upper edge of the heating electrode and the guide shell is 60-85mm and the graphite crucible is lower than the quartz crucible by 20-30mm. The device ensures relatively high pulling speed, relatively better solid-liquid interface when pulling the crystal, the gas distribution in the device is reasonable to be favorable for single-crystal growth at the relatively high pulling speed, so as to obtain flat solid-liquid interface.
Description
Technical field
The utility model relates to the production unit of 18 o'clock silicon suitable for solar purposes single-chips, specifically is a kind of thermal field device of producing 18 o'clock silicon suitable for solar purposes monocrystalline with the vertical pulling method in the production unit of vertical pulling method production silicon single-crystal.
Background technology
The thermal field device that common vertical pulling method is produced silicon single-crystal generally includes shell, be installed in the plumbago crucible at shell center, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, in the production process, the raw material in the quartz crucible is through heating and the local cooling and the columned silicon single-crystal of growth formation that stretches.In the traditional structure, the relative position of each parts is provided with unreasonablely in the thermal field device, and difficult formation is thermograde preferably, is unfavorable for the raising of the stable and pulling rate of crystal pulling process.
Summary of the invention
Technical problem to be solved in the utility model is, provides a kind of thermograde reasonable, and the distribution of gas in device is reasonable, and the vertical pulling method of obtainable solid-liquid interface shape and higher pulling rate is produced the thermal field device of 18 o'clock silicon suitable for solar purposes monocrystalline.
The thermal field device that vertical pulling method of the present utility model is produced 18 o'clock silicon suitable for solar purposes monocrystalline includes shell, be installed in the plumbago crucible at shell center, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, the length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, the upper edge of heating electrode is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
The utility model is by the relative position between each device feature, and the selection of material thermal characteristics, form proper thermograde, can guarantee has higher pulling rate when crystal pulling, solid-liquid interface shape preferably, the distribution of gas in device is reasonable, helps sun power and grows under higher pulling rate with monocrystalline, obtains smooth solid-liquid interface.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Embodiment
As shown in the figure, this vertical pulling method thermal field device of producing 18 o'clock silicon suitable for solar purposes monocrystalline include shell 1, be installed in the shell center plumbago crucible 2, be positioned at plumbago crucible quartz crucible 3, be positioned at the heating electrode 4 of plumbago crucible periphery and be positioned at the guide shell 5 of quartz crucible inboard.The length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, and the well heater upper edge of formation is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
Claims (1)
1. a vertical pulling method is produced the thermal field device of 18 o'clock silicon suitable for solar purposes monocrystalline, include shell, be installed in the shell center plumbago crucible, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, it is characterized in that: the length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, the upper edge of heating electrode is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920042951XU CN201530877U (en) | 2009-06-30 | 2009-06-30 | Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920042951XU CN201530877U (en) | 2009-06-30 | 2009-06-30 | Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201530877U true CN201530877U (en) | 2010-07-21 |
Family
ID=42526282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200920042951XU Expired - Fee Related CN201530877U (en) | 2009-06-30 | 2009-06-30 | Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201530877U (en) |
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2009
- 2009-06-30 CN CN200920042951XU patent/CN201530877U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: ZHENJIANG RIETECH NEW ENERGY TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHENJIANG HUANTAI SILICIUM TECHNOLOGY CO., LTD. Effective date: 20110706 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 212216 HUANTAI INDUSTRIAL PARK, YOUFANG TOWN, YANGZHONG CITY, JIANGSU PROVINCE TO: 212200 NO. 998, GANGLONG ROAD, ECONOMIC DEVELOPMENT ZONE, YANGZHONG CITY, JIANGSU PROVINCE, CHINA |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110706 Address after: 212200 Chinese Jiangsu Province Economic Development Zone of Yangzhong Port Road No. 998 Patentee after: Zhenjiang Rietech New Energy Technology Co., Ltd. Address before: Ring you Fang town of Yangzhong city in Jiangsu province's Industrial Park 212216 Patentee before: Zhenjiang Huantai Silicon Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100721 Termination date: 20140630 |
|
| EXPY | Termination of patent right or utility model |