CN101586251A - Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method - Google Patents
Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method Download PDFInfo
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- CN101586251A CN101586251A CNA200910032626XA CN200910032626A CN101586251A CN 101586251 A CN101586251 A CN 101586251A CN A200910032626X A CNA200910032626X A CN A200910032626XA CN 200910032626 A CN200910032626 A CN 200910032626A CN 101586251 A CN101586251 A CN 101586251A
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- crucible
- heating electrode
- silicon crystal
- solar silicon
- shell
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Abstract
The invention relates to a production device of 18 inches solar silicon crystal, particularly relates to a thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method. The apparatus includes a shell, a graphite crucible mounted in center of the shell, a quartz crucible disposed in the graphiter crucible, a heating electrode positioned in periphery of the graphite crucible and a guide tube disposed in inner side of the quartz crucible, the heating electrode has a length of 120 to 150 mm in upward and downward directions, the shorted distance from upper edge of the heating electrode to the guide tube is between 60 to 85 mm, the graphite crucible is 20 to 30 mm lower than the quartz crucible. The invention can ensure higher pull speed, better solid-liquid interface shape, reasonabel distribution of gas in the apparatus when pulling the crystal, which is helpful for the solar silicon crystal growing at high pulling speed and obtaining flat solid-liquid interface.
Description
Technical field
The present invention relates to the production unit of 18 inch silicon suitable for solar purposes single-chips, specifically is a kind of thermal field device of producing 18 inch silicon suitable for solar purposes monocrystalline with the vertical pulling method in the production unit of vertical pulling method production silicon single-crystal.
Background technology
The thermal field device that common vertical pulling method is produced silicon single-crystal generally includes shell, be installed in the plumbago crucible at shell center, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, in the production process, the raw material in the quartz crucible is through heating and the local cooling and the columned silicon single-crystal of growth formation that stretches.In the traditional structure, the relative position of each parts is provided with unreasonablely in the thermal field device, and difficult formation is thermograde preferably, is unfavorable for the raising of the stable and pulling rate of crystal pulling process.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of thermograde reasonable, and the distribution of gas in device is reasonable, and the vertical pulling method of obtainable solid-liquid interface shape and higher pulling rate is produced the thermal field device of 18 inch silicon suitable for solar purposes monocrystalline.
The thermal field device that vertical pulling method of the present invention is produced 18 inch silicon suitable for solar purposes monocrystalline includes shell, be installed in the plumbago crucible at shell center, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, the length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, the upper edge of heating electrode is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
The present invention is by the relative position between each device feature, and the selection of material thermal characteristics, form proper thermograde, can guarantee has higher pulling rate when crystal pulling, solid-liquid interface shape preferably, the distribution of gas in device is reasonable, helps sun power and grows under higher pulling rate with monocrystalline, obtains smooth solid-liquid interface.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
As shown in the figure, this vertical pulling method thermal field device of producing 18 inch silicon suitable for solar purposes monocrystalline include shell 1, be installed in the shell center plumbago crucible 2, be positioned at plumbago crucible quartz crucible 3, be positioned at the heating electrode 4 of plumbago crucible periphery and be positioned at the guide shell 5 of quartz crucible inboard.The length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, and the well heater upper edge of formation is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
Claims (1)
1, a kind of vertical pulling method is produced the thermal field device of 18 o'clock silicon suitable for solar purposes monocrystalline, include shell, be installed in the shell center plumbago crucible, be positioned at plumbago crucible quartz crucible, be positioned at the heating electrode of plumbago crucible periphery and be positioned at the guide shell of quartz crucible inboard, it is characterized in that: the length that described heating electrode makes progress at upper and lower is the 120-150 millimeter, the upper edge of heating electrode is between the 60-85 millimeter apart from the shortest distance of guide shell, and described plumbago crucible is lower than quartz crucible 20-30 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200910032626XA CN101586251A (en) | 2009-06-30 | 2009-06-30 | Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200910032626XA CN101586251A (en) | 2009-06-30 | 2009-06-30 | Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101586251A true CN101586251A (en) | 2009-11-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200910032626XA Pending CN101586251A (en) | 2009-06-30 | 2009-06-30 | Thermal field apparatus for producing 18 inches solar silicon crystal by using Czochralski method |
Country Status (1)
| Country | Link |
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| CN (1) | CN101586251A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060902A (en) * | 2013-01-10 | 2013-04-24 | 上海大学 | Direct forming preparation method of ribbon silicon and direct forming device of silicon wafer |
| CN103194792A (en) * | 2013-04-16 | 2013-07-10 | 江西豪安能源科技有限公司 | Growth method of 9-inch czochralski silicon for manufacturing pseudo-single crystal seed |
-
2009
- 2009-06-30 CN CNA200910032626XA patent/CN101586251A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060902A (en) * | 2013-01-10 | 2013-04-24 | 上海大学 | Direct forming preparation method of ribbon silicon and direct forming device of silicon wafer |
| CN103060902B (en) * | 2013-01-10 | 2016-04-27 | 上海大学 | Direct forming prepares method and the silicon chip direct-forming device of band silicon |
| CN103194792A (en) * | 2013-04-16 | 2013-07-10 | 江西豪安能源科技有限公司 | Growth method of 9-inch czochralski silicon for manufacturing pseudo-single crystal seed |
| CN103194792B (en) * | 2013-04-16 | 2016-02-03 | 江西豪安能源科技有限公司 | A kind of for the manufacture of the growth method of accurate single crystal seed with 9 inches of pulling of silicon single crystal |
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Open date: 20091125 |