CN201084728Y - 半导体引线框架 - Google Patents

半导体引线框架 Download PDF

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CN201084728Y
CN201084728Y CNU2007200741466U CN200720074146U CN201084728Y CN 201084728 Y CN201084728 Y CN 201084728Y CN U2007200741466 U CNU2007200741466 U CN U2007200741466U CN 200720074146 U CN200720074146 U CN 200720074146U CN 201084728 Y CN201084728 Y CN 201084728Y
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lead frame
metal material
bonding
bonding region
electrodeposited coating
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徐定辉
周明
方旺胜
托尼·徐
杨洪波
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GEM ELECTRONICS (SHANGHAI) CO Ltd
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Abstract

本实用新型公开了一种半导体引线框架，用以封装芯片，该引线框架包括基岛和设于基岛周围的多个配线区，其中芯片安装在基岛上，并通过金属引线电性连接到多个配线区，每个配线区包括一第一键合区和一第二键合区，其中第一键合区上具有第一金属材料，第二键合区上具有第二金属材料。因此，该引线框架能够适用多种引线的键合，避免由于不同引线的键合需要而导致框架种类多样，同时也提高了一个半导体器件内，多种金属引线的键合可靠性。

Description

半导体引线框架
技术领域
本实用新型涉及一种半导体引线框架，尤其涉及一种适用于多种引线键合的半导体引线框架。
背景技术
用于半导体器件封装工艺的引线框架被用来在基岛上安装半导体芯片，通过引线键合在芯片与框架管脚之间实现电气性能的连接，用树脂材料密封半导体芯片制成半导体器件，达到器件的可靠性要求。
图1A是目前的用于半导体器件的引线框架及其装配结构实例的平面图。如图1A所示，芯片1键合在引线框架的基岛2上，芯片1通过金属引线5(如铝线或者金线、铜线等)与引线框架的配线区3连接，并通过引线框架向外引出到管脚4。为了实现引线键合的可靠性要求，在引线框架制造过程中，通常根据金属引线的类型在如图1A所示的阴影线包围的配线区3覆盖一电镀层6。图1B是引线框架电镀层的侧视图，其中芯片1安装在基岛2上，通过金属连线5连接到配线区3的电镀层6上。
在现有技术的普遍设计中，如果金属引线5是铝线，由于稳定的铝-镍键合系统，通常在配线区3预先电镀上一层镍(Ni)作为电镀层6，该电镀层6的厚度范围一般从2um到6um。如果金属引线是金线或铜线，由于稳定的金-银键合系统，通常在配线区3预先电镀上一层银(Ag)作为电镀层6，该电镀层6的厚度范围一般从3um到7.5um。
而在现有的引线框架设计中，配线区3的表面一般覆盖单一类电镀层6，如镀镍(Ni)层或镀银(Ag)层，这样配线区表面材料只有一种。其主要存在以下不足：
1.对于混合引线键合工艺，即引线框架的部分管脚4通过铝线和芯片1电性相连，而部分管脚4通过金线和芯片1电性相连的情况，由于现有设计的配线区表面材料只为单一种类，造成在引线框架某些管脚的配线区域形成金-镍或铝-银不稳定的键合系统，导致半导体器件在使用过程中，键合的引线可能从引线框架的配线区脱落，造成器件功能的失效。
2.针对同一种封装形式，当不同的器件需要采用不同的金属引线时，需要根据所要采用的金属引线种类选用配线区域不同电镀层的引线框架种类，从而导致引线框架原材料种类多，造成成本高和原材料计划的难度大。
实用新型内容
针对现有技术的不足，本实用新型提供一种适用于多种引线键合的半导体引线框架，它能够根据不同的金属引线在配线区域选择具有合适表面材料的引线键合区，以达到与所键合的引线形成可靠的键合性能。
本实用新型为解决上述技术问题而采用的技术方案是提出一种半导体引线框架，用以封装芯片，该引线框架包括基岛和设于基岛周围的多个配线区，其中芯片安装在基岛上，并通过金属引线电性连接到多个配线区，其中，每个配线区包括一第一键合区和一第二键合区，第一键合区上具有第一金属材料，第二键合区上具有第二金属材料。
上述的半导体引线框架中，第一键合区可以覆盖第一电镀层而形成，该第一电镀层由第一金属材料形成，第一金属材料例如是镍(Ni)、镍合金或者银(Ag)。而第二键合区可由配线区中未被第一电镀层覆盖的部分所形成，配线区的基板材料(如铜)作为键合的第二金属材料。
上述的半导体引线框架中，还可以是第一键合区、第二键合区分别覆盖第一电镀层、第二电镀层。该第一、第二电镀层分别由不同的第一、第二金属材料形成，第一、第二金属材料例如是镍(Ni)、银(Ag)、或NiPd、NiPdAu、NiPdSnAu等镍合金。
与现有技术相比，本实用新型的优点在于：通过在引线框架配线区的形成不同金属材料的键合区，使该框架能够适用多种引线的键合，避免由于不同引线的键合需要而导致框架种类多样。同时，也提高了一个半导体器件内，多种金属引线的键合可靠性。
附图说明
为让本实用新型的上述目的、特征和优点能更明显易懂，以下结合附图对本实用新型的具体实施方式作详细说明，其中：
图1A是常用的用于半导体器件的引线框架及其装配结构实例的平面图。
图1B是图1A所示引线框架电镀层的侧视图。
图2是本实用新型一个实施例的示意图。
图3是本实用新型另一个实施例的示意图。
具体实施方式
以下将结合附图对本实用新型的构思、具体结构以及产生的技术效果作进一步的说明，以充分地了解本实用新型。
图2显示了本实用新型的半导体封装引线框架的一个实施例。如图2所示，引线框架10包括一基岛12、多个配线区13以及多个管脚(图未示)，基岛12上安装芯片1，多个配线区13设于基岛12周围，用以电性连接芯片1，而多个管脚则分布于配线区的外围。在本实施例中，每个配线区13包括一第一键合区13a(图中阴影部分)和第二键合区13b(图中空白部分)，其中第一键合区13a上覆盖一层第一电镀层131，而第二键合区13b由于未覆盖任何电镀层而露出配线区13的基板材料。该第一电镀层131选用第一金属材料，如银(Ag)，而第二键合区13b所露出的基板材料选用第二金属材料，如铜合金。因此，在采用混合引线键合封装的情况下，铝线15可以键合在第二键合区13b的铜合金材料上，使之具有好的可靠性，而金线(Au)14可以键合在第一键合区13a的镀银(Ag)的第一电镀层131上，得到具有很好可靠性的Au-Ag键合系统。当然，在另一个实施例中，第二键合区13b的铜合金也可与金线14键合，而第一键合区13a可选择镍合金作为电镀金属，以与铝线15搭配。
图3是本实用新型的半导体封装引线框架的另一个实施例。在图3所示的引线框架20中，相同的标记表示相同的结构，其不同之处在于，配线区23的第一键合区23a和第二键合区23b分别覆盖一层第一电镀层231和第二电镀层232。该第一电镀层231选用第一金属材料，如银(Ag)(或镍(Ni))；该第二电镀层231选用不同于第一金属材料的第二金属材料，如镍(Ni)(或银(Ag))。因此，当半导体器件要求引线14为金线时，能够键合在镀银(Ag)的第一电镀层231表面，而对需要引线15为铝线键合的半导体器件封装时，引线15能够选择键合在第二电镀层232表面。
因此，使用本实用新型进行半导体封装时，不需要由于不同的引线类型更换框架，减少了成本，便于原材料的计划和采购。更重要的是，在采用混合引线键合封装的情况下，该框架能够提供两种金属材料的引线键合，因此不会出现键合不可靠的情形。
值得指出的是，上述第一、第二键合区的形状并不限于图中所示的条状或矩形状，其排列关系也可根据布线需要进行调整。此外，在第一、第二键合区均覆盖电镀层的情况下，并不要求电镀层覆盖整个配线区，而是可以根据需要选择覆盖部分区域。
另外需要说明的是，本实用新型所叙述的引线框架结构的键合金属材料还还可以选择其他金属，例如NiPd、NiPdAu、NiPdSnAu等镍合金，由于这些镍合金材料与铝线和金线均可稳定键合，因此这些镍合金可用于图2所示实施例，用作第一键合区的电镀金属材料，也可用于图3所示实施例，用作第一键合区和第二键合区的其中任一个的电镀金属材料。本领域技术人员在理解了本实用新型的精神之后，可以对已知或将来出现的金属材料进行的各种组合，以应用于本实用新型中。然而这些变化，仍然在本实用新型的范围内。

Claims (8)

1.一种半导体引线框架，用以封装芯片，该引线框架包括基岛和设于基岛周围的多个配线区，其中芯片安装在基岛上，并通过金属引线电性连接到多个配线区，其特征在于，每个配线区包括一第一键合区和一第二键合区，其中第一键合区上具有第一金属材料，第二键合区上具有第二金属材料。
2.如权利要求1所述的半导体引线框架，其特征在于，所述第一键合区覆盖一第一电镀层，该第一电镀层由所述第一金属材料形成。
3.如权利要求2所述的半导体引线框架，其特征在于，所述第二键合区由所述配线区中未被第一电镀层覆盖的部分形成，所述第二金属材料为配线区的基板材料。
4.如权利要求3所述的半导体引线框架，其特征在于，所述配线区的基板材料为铜合金，而第一金属材料包括银、镍或者镍合金。
5.如权利要求4所述的半导体引线框架，其特征在于，所述镍合金包括NiPd、NiPdAu、NiPdSnAu。
6.如权利要求2所述的半导体引线框架，其特征在于，所述第二键合区覆盖一第二电镀层，该第二电镀层由所述第二金属材料形成。
7.如权利要求6所述的半导体引线框架，其特征在于，所述第一金属材料是银、镍或者镍合金的其中一种，所述第二金属材料是银、镍或者镍合金的其中另一种。
8.如权利要求4或7所述的半导体引线框架，其特征在于，所述镍合金包括NiPd、NiPdAu、NiPdSnAu。
CNU2007200741466U 2007-08-28 2007-08-28 半导体引线框架 Expired - Lifetime CN201084728Y (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810462A (zh) * 2015-04-17 2015-07-29 广州华微电子有限公司 一种中大功率led驱动芯片的esop8引线框架
CN105931972A (zh) * 2016-06-17 2016-09-07 泰兴市永志电子器件有限公司 半导体框架的内引线分层制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104810462A (zh) * 2015-04-17 2015-07-29 广州华微电子有限公司 一种中大功率led驱动芯片的esop8引线框架
CN104810462B (zh) * 2015-04-17 2017-05-24 广州华微电子有限公司 一种中大功率led驱动芯片的esop8引线框架
CN105931972A (zh) * 2016-06-17 2016-09-07 泰兴市永志电子器件有限公司 半导体框架的内引线分层制作方法

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