CN1988134A - 数据擦除方法以及非易失性半导体存储器件的制造方法 - Google Patents
数据擦除方法以及非易失性半导体存储器件的制造方法 Download PDFInfo
- Publication number
- CN1988134A CN1988134A CNA2006101452779A CN200610145277A CN1988134A CN 1988134 A CN1988134 A CN 1988134A CN A2006101452779 A CNA2006101452779 A CN A2006101452779A CN 200610145277 A CN200610145277 A CN 200610145277A CN 1988134 A CN1988134 A CN 1988134A
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- Prior art keywords
- mentioned
- electric charge
- charge accumulation
- memory cell
- accumulation portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000009825 accumulation Methods 0.000 claims description 101
- 230000005611 electricity Effects 0.000 claims description 40
- 238000005036 potential barrier Methods 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 6
- 238000005513 bias potential Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 230000014509 gene expression Effects 0.000 description 11
- -1 boron ion Chemical class 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002784 hot electron Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical group Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 208000013935 Electric injury Diseases 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005368994A JP4908843B2 (ja) | 2005-12-22 | 2005-12-22 | データ消去方法及び不揮発性半導体記憶装置の製造方法 |
JP2005-368994 | 2005-12-22 | ||
JP2005368994 | 2005-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1988134A true CN1988134A (zh) | 2007-06-27 |
CN1988134B CN1988134B (zh) | 2010-08-25 |
Family
ID=38184860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101452779A Active CN1988134B (zh) | 2005-12-22 | 2006-11-24 | 数据擦除方法以及非易失性半导体存储器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7955933B2 (zh) |
JP (1) | JP4908843B2 (zh) |
KR (1) | KR101350912B1 (zh) |
CN (1) | CN1988134B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4354498B2 (ja) | 2007-03-30 | 2009-10-28 | Okiセミコンダクタ株式会社 | 半導体メモリ装置の製造方法及び半導体メモリ装置の再生方法及び半導体メモリ装置の再出荷方法 |
US20090179256A1 (en) * | 2008-01-14 | 2009-07-16 | Sung-Bin Lin | Memory having separated charge trap spacers and method of forming the same |
WO2009119533A1 (ja) * | 2008-03-25 | 2009-10-01 | 日本電気株式会社 | 半導体記憶装置、メモリセルアレイ、半導体記憶装置の製造方法および駆動方法 |
US9029822B2 (en) * | 2012-11-17 | 2015-05-12 | Avalanche Technology, Inc. | High density resistive memory having a vertical dual channel transistor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2880695B2 (ja) * | 1996-09-27 | 1999-04-12 | 松下電子工業株式会社 | 半導体記憶装置の加速試験方法 |
US6128232A (en) * | 1998-09-21 | 2000-10-03 | Texas Instruments Incorporated | Method for erasing a non-volatile memory array |
JP3945930B2 (ja) * | 1999-02-08 | 2007-07-18 | 松下電器産業株式会社 | フラッシュメモリ混載マイコンの検査方法 |
US6344994B1 (en) * | 2001-01-31 | 2002-02-05 | Advanced Micro Devices | Data retention characteristics as a result of high temperature bake |
US6493261B1 (en) * | 2001-01-31 | 2002-12-10 | Advanced Micro Devices, Inc. | Single bit array edges |
US6442074B1 (en) * | 2001-02-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Tailored erase method using higher program VT and higher negative gate erase |
US6456533B1 (en) * | 2001-02-28 | 2002-09-24 | Advanced Micro Devices, Inc. | Higher program VT and faster programming rates based on improved erase methods |
US6307784B1 (en) * | 2001-02-28 | 2001-10-23 | Advanced Micro Devices | Negative gate erase |
JP3984109B2 (ja) * | 2001-06-11 | 2007-10-03 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6687648B1 (en) * | 2001-11-02 | 2004-02-03 | Cypress Semiconductor Corporation | Method of predicting reliabilty of oxide-nitride-oxide based non-volatile memory |
US6800493B2 (en) * | 2001-12-20 | 2004-10-05 | Macronix International Co., Ltd. | Pre-erase manufacturing method |
CN1438654A (zh) * | 2002-02-10 | 2003-08-27 | 旺宏电子股份有限公司 | 快闪存储器的数据擦除方法 |
JP2003309191A (ja) | 2002-04-10 | 2003-10-31 | Macronix Internatl Co Ltd | プリイレーズ方法 |
JP2004335026A (ja) | 2003-05-09 | 2004-11-25 | Sharp Corp | 電気的にプログラム可能でかつ電気的に消去可能な半導体記憶装置 |
JP2005064295A (ja) * | 2003-08-14 | 2005-03-10 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリ、この半導体不揮発性メモリへの情報の記録方法、及びこの半導体不揮発性メモリからの情報の読み出し方法 |
-
2005
- 2005-12-22 JP JP2005368994A patent/JP4908843B2/ja not_active Expired - Fee Related
-
2006
- 2006-11-16 US US11/560,363 patent/US7955933B2/en not_active Expired - Fee Related
- 2006-11-24 KR KR1020060116653A patent/KR101350912B1/ko active IP Right Grant
- 2006-11-24 CN CN2006101452779A patent/CN1988134B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20070066863A (ko) | 2007-06-27 |
US7955933B2 (en) | 2011-06-07 |
US20070161188A1 (en) | 2007-07-12 |
KR101350912B1 (ko) | 2014-01-13 |
JP2007173502A (ja) | 2007-07-05 |
CN1988134B (zh) | 2010-08-25 |
JP4908843B2 (ja) | 2012-04-04 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OKI SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: OKI ELECTRIC INDUSTRY CO., LTD. Effective date: 20131108 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: LAPIS SEMICONDUCTOR Co.,Ltd. Address before: Kanagawa Patentee before: Oki Semiconductor Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131108 Address after: Kanagawa Patentee after: Oki Semiconductor Co.,Ltd. Address before: Tokyo, Japan Patentee before: Oki Electric Industry Co.,Ltd. |