CN1986158A - Separating collector and collecting method for waste chemico-mechanical polishing liquid - Google Patents
Separating collector and collecting method for waste chemico-mechanical polishing liquid Download PDFInfo
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- CN1986158A CN1986158A CN 200510111676 CN200510111676A CN1986158A CN 1986158 A CN1986158 A CN 1986158A CN 200510111676 CN200510111676 CN 200510111676 CN 200510111676 A CN200510111676 A CN 200510111676A CN 1986158 A CN1986158 A CN 1986158A
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Abstract
The method and apparatus for collecting high pollutant level waste water from chemico-mechanical polishing process alone features that the high pollutant level waste water from polishing equipment is drained that one controlled non-return valve to a special container for separate treatment. The present invention can lower the pollutant level in the total waste water of crystal wafer plant and is favorable to lowering the waste water treating cost.
Description
Technical field
The present invention relates to the shunting gathering-device and the method for waste liquid in the semiconductor fabrication, be specifically related to chemically mechanical polishing segregation of waste gathering-device and collection method thereof.
Background technology
Chemically mechanical polishing (CMP) process has been widely used in the manufacture process of semi-conductor industry wafer, and comprehensive planarization is a kind of technology effective and commonly used for crystal column surface.Though the CMP process is the important technology in the modern semiconductors process industry, the CMP process is a kind of process of high pollution, and this is because used lapping liquid (slurry) during the course.Generally speaking, lapping liquid consists predominantly of micropowder body and other chemical substances of the 30-100 nanometer of 5-10%, as pH buffer, oxidant, surfactant etc.Therefore, the CMP waste liquid comprises the various inorganic and organic pollution materials that is produced from lapping liquid, wafer itself and the follow-up cleaning procedure of CMP.
Simultaneously, in the follow-up cleaning procedure of CMP,, need to use a large amount of deionized waters in order to remove polluter attached to crystal column surface.According to estimates, for a wafer factory that is provided with 20 CMP facility, will produce about 700m every day
3The CMP waste liquid.This waste liquid is not only measured greatly, and total solids concentration, COD (COD) value etc. is also high, must properly be handled.
At present, the method and apparatus of existing processing chemically mechanical polishing waste liquid will carry out follow-up liquid waste processing (referring to US2005/0121394, US2004/0065621A1 and JP2003211150) usually from the waste collection of each CMP process that uses different lapping liquids together in the lump.Fig. 1 illustrates the gathering system of the chemically mechanical polishing waste liquid of prior art, and the waste water that waste liquid that each lapping device p1, p2 and the p3 that uses different lapping liquids to carry out chemically mechanical polishing produced and wafer cleaning device 5 produce flows in the waste liquid returnable 2 in the lump.
The shortcoming of prior art is not consider to use the waste liquor contamination thing level of each CMP process of different lapping liquids, the grinding waste liquid of a small amount of high pollution is mixed in the lump with a large amount of oligosaprobic cleaning waste water and/or other oligosaprobic grinding waste liquid, this often causes producing the sewage that a large amount of pollutant levels exceed standard, thereby increases the cost of sewage purification greatly.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the inventor has carried out network analysis to the waste liquid that each CMP process produced that grinds each layer crystal circle, finds that the pollutant level of grinding waste liquid and employed lapping liquid are closely related with the wafer layer material that is ground.Generally speaking, in whole CMP process, have only one or several CMP process can produce the high pollution waste liquid, and the pollutant level of the grinding waste liquid of all the other polishing process and cleaning waste water is relatively low.Therefore; if collect and handle high pollution waste liquid and the low waste liquid that pollutes respectively; then might be under reasonable continuous be processed number of times; make the low waste liquid that pollutes satisfy the standard of safety dumping or only need can satisfy the safety dumping standard through simple sewage disposal; thereby save cost of sewage disposal greatly, also help protecting simultaneously environment.
The object of the present invention is to provide a kind of shunting gathering-device of chemically mechanical polishing waste liquid, comprise at least one chemically mechanical polishing lapping device, it uses lapping liquid that wafer is carried out chemically mechanical polishing; Arrival end is connected at least one check valve of at least one described lapping device, allows the grinding waste liquid way flow mistake that is produced by the lapping device that is connected during this one-way valve opens; Signal generation apparatus; Produce the signal of the described one-way valve opens/closing motion of control; The first waste liquid returnable, this container is connected to the port of export of described check valve, reclaims the grinding waste liquid that is produced by described lapping device; Wafer cleaning device, this cleaning device use cleaning fluid or deionized water to before grinding and/or wafer afterwards clean; The second waste liquid returnable, this container are connected to described wafer cleaning device and are not connected to other chemically mechanical polishing lapping devices of check valve.
Check valve is selected from has the unidirectional ball valve by performance of fluid, magnetic valve, mechanical valve etc., preferred one-way pneumatic ball valve.
Signal generation apparatus is the programmatic telecommunication generator.
Described at least one chemically mechanical polishing lapping device is to be used for grinder that chemically mechanical polishing is carried out on silicon layer, silicon nitride layer, silicon oxide layer, copper interconnection layer, aluminum interconnection layer or the TaN/Ta barrier layer of wafer, is preferably the grinder that the TaN/Ta barrier layer of wafer is carried out chemically mechanical polishing.
This shunting gathering-device is characterised in that the collected waste liquid amount of the first waste liquid returnable is less than the collected waste liquid amount of the second waste liquid returnable far away, and the pollutant level of the collected waste liquid of the first waste liquid returnable is far above the collected waste liquid of the second waste liquid returnable.
The present invention also provides a kind of method of collecting the chemically mechanical polishing waste liquid of shunting, the waste liquid that it is characterized in that using above-mentioned shunting gathering-device to collect one or more CMP process respectively and produced, may further comprise the steps: when wafer enters at least one chemically mechanical polishing lapping device and polishes, by signal generation apparatus output start signal, make the grinding waste liquid of the chemically mechanical polishing lapping device that connects check valve flow into the described first waste liquid returnable; Make the grinding waste liquid of the chemically mechanical polishing lapping device that does not connect check valve flow into the described second waste liquid returnable; Wafer flows into the described second waste liquid returnable through the waste liquid that described cleaning device uses cleaning fluid or deionized water washing to be produced; Behind predetermined processing wafer number of times, the waste liquid in the first and second waste liquid returnable is removed respectively and handle separately separately.
Said method is characterised in that the wafer polishing sheet number of times that control is predetermined, makes the pollutant level of the waste liquid in the second waste liquid returnable be lower than the permission discharge standard.
The feature of said method also is to adopt burning, cohesion, gelling, micro-filtration, ultrafiltration, electrolysis, electrode cantation, electricity to filter or electrodialytic method is handled separately the collected waste liquid of the first waste liquid returnable.
Description of drawings
Fig. 1 illustrates the gathering-device of the chemically mechanical polishing waste liquid of prior art;
Fig. 2 illustrates the shunting gathering-device of the chemically mechanical polishing waste liquid of first embodiment of the invention;
Fig. 3 illustrates the shunting gathering-device of the chemically mechanical polishing waste liquid of second embodiment of the invention.
Fig. 4 illustrates the shunting gathering-device of the chemically mechanical polishing waste liquid of third embodiment of the invention.
Fig. 5 illustrates and respectively forms waste liquid COD value one wafer processing number of times figure in the embodiment of the present invention in the total waste liquid of factory.
The specific embodiment
Below describe the shunting gathering-device of chemically mechanical polishing waste liquid of the present invention in detail.
＜the first embodiment 〉
Fig. 2 illustrates the shunting gathering-device of the chemically mechanical polishing waste liquid of first embodiment of the invention, wherein p1, p2 are for using the copper burnishing device of lapping liquid A (600Y), p3 is for using the Ta/TaN barrier polishing device of lapping liquid B (T805), one-way pneumatic ball valve 1 is connected to burnishing device p3 by pipeline, the switch of ball valve 1 is subjected to signal generation apparatus 6 controls, and wafer conveyer arm 4 responsible wafer is sent in each processing unit (plant) are handled.In this embodiment, the waste liquid of burnishing device p1, p2 and cleaning device 5 all flows in the second waste liquid returnable 2, and the waste liquid of burnishing device p3 is by the independent inflow first waste liquid returnable 3 of ball valve 1.
Embodiment of the present invention adopt chemical oxygen demand COD as the index that characterizes the water pollution degree.Chemical oxygen demand COD is defined as under certain condition, and the amount of the oxidant that reducing substances consumed in the oxidation 1 premium on currency sample is represented with the ppm of oxygen.
The COD (COD) that table 1 illustrates each main waste liquid of wafer factory is analyzed and separately for the contribution of total waste liquid of CMP and the total waste liquid COD of factory.By the visible T805 waste liquid of table is primary pollution source.The pollutant level of other waste liquid is relatively low, therefore collects and handle the pollutant level that the T805 waste liquid helps significantly reducing the total waste liquid of factory separately.
The various waste liquid COD composition analysis of table 1
| Sample | COD(ppm) | The ml/ wafer | m 3/ day | Waste liquid COD (ppm) in the total returnable of CMP | The total waste liquid COD of factory (ppm) |
| The BTA copper protective agent | 254.03 | 100.00 | 0.11 | 0.73 | 0.01 |
| T805 | 187234.85 | 291.67 | 0.31 | 1560.50 | 24.19 |
| 600Y | 19870.97 | 362.50 | 0.39 | 205.83 | 3.19 |
| The EC cleaning fluid | 55649.17 | 33.33 | 0.04 | 53.01 | 0.82 |
| Deionized water | 0.00 | 4166.67 | 4.43 | ||
| The CTS-100 cleaning fluid | 5.4 | ||||
| The etch phase waste liquid | 4.3 |
What Fig. 5 illustrated the total waste liquid of wafer factory respectively forms waste liquid COD trend.As seen after removing the T805 waste liquid in the total waste liquid of factory, can process 20000 times wafer at least continuously under the discharge standard that allows, this almost is equivalent to the moon output of a standard wafer factory.And the total waste liquid COD of the factory of not removing T805 waste liquid curve always surpasses the discharging COD standard that allows, could qualified discharge after the further purified treatment of necessary process.The independent T805 waste liquid volume of collecting is less, because pollutant level is very high, therefore can directly carry out harmless treatment by methods such as burning, cohesion, gelling, micro-filtration, ultrafiltration, electrolysis, electrode cantation, electricity filtration or electrodialysis.
Therefore, first embodiment of the present invention can greatly reduce the sewage purification cost of wafer factory.
＜the second embodiment 〉
Fig. 3 illustrates the shunting gathering-device of the chemically mechanical polishing waste liquid of second embodiment of the invention, wherein p2 is for using the copper burnishing device of lapping liquid A (600Y), p3 is for using the Ta/TaN barrier polishing device of lapping liquid B (T805), one-way pneumatic ball valve 1 is connected burnishing device p2 and p3 with 1 ' respectively by pipeline, ball valve 1 and 1 ' switch are subjected to signal generation apparatus 6 controls, and wafer conveyer arm 4 is responsible for wafer sent in each processing unit (plant) and is handled.In this embodiment, the waste liquid of burnishing device p1 and cleaning device 5 flows in the second waste liquid returnable 2, and the waste liquid of burnishing device p2 and p3 passes through the inflow first waste liquid returnable 3 of ball valve 1 and 1 ' respectively.
Reference table 1 as seen, therefore 600Y waste liquid COD level is only second to the T805 waste liquid, further removes the 600Y waste liquid on the basis of removing the T805 waste liquid and helps further reducing the total waste liquid COD of factory.
As seen from Figure 5, remove after T805 and the 600Y waste liquid, the total waste water COD of factory allows the continuous wafer number of times of processing further to increase to and surpasses 35000 wafers when allowing discharging COD below the mark.Separately the T805 that collects and 600Y waste liquid mixture adopt the method identical with processing T805 in the embodiment one to handle separately.
Therefore, second embodiment of the present invention can further reduce the sewage purification cost of wafer factory.
＜the three embodiment 〉
The 3rd embodiment of the present invention is compared with second embodiment, and difference is the 600Y waste liquid that burnishing device p2 is produced is entered separately in the 3rd waste liquid returnable 3 ', and other parts are identical with second embodiment.
This embodiment is fit to needs and adopts different follow-up purification methods to handle the situation of T805 and 600Y waste liquid respectively.
Though the present invention adopts particular preferred embodiment to describe, those skilled in the art can make various modifications and changes under the situation of the spirit and scope of the invention that appended claims limited.
Claims (11)
1. a chemically mechanical polishing segregation of waste gathering-device comprises
At least one chemically mechanical polishing lapping device, this device use lapping liquid that wafer is carried out chemically mechanical polishing;
Arrival end is connected at least one check valve of at least one described lapping device, allows the grinding waste liquid way flow mistake that is produced by the lapping device that is connected during this one-way valve opens;
Signal generation apparatus; Produce the signal of the described one-way valve opens/closing motion of control;
The first waste liquid returnable, this container is connected to the port of export of described check valve, reclaims the grinding waste liquid that is produced by described lapping device;
Wafer cleaning device, this cleaning device use cleaning fluid or deionized water to before grinding and/or wafer afterwards clean;
The second waste liquid returnable, this container are connected to described wafer cleaning device and are not connected to other chemically mechanical polishing lapping devices of check valve.
2. the segregation of waste gathering-device of claim 1, wherein said check valve is selected from has one of the unidirectional ball valve by performance of fluid, magnetic valve, mechanical valve.
3. the segregation of waste gathering-device of claim 2, wherein said check valve is the one-way pneumatic ball valve.
4. the segregation of waste gathering-device of claim 1, wherein said signal generation apparatus is the programmatic telecommunication generator.
5. the segregation of waste gathering-device of claim 1, wherein said lapping device is the grinder that chemically mechanical polishing is carried out on silicon layer, silicon nitride layer, silicon oxide layer, copper interconnection layer, aluminum interconnection layer or the TaN/Ta barrier layer to wafer.
6. the segregation of waste gathering-device of claim 5, wherein said lapping device is the grinder that the TaN/Ta barrier layer of wafer is carried out chemically mechanical polishing.
7. the segregation of waste gathering-device of claim 1 is characterized in that the pollutant level of the collected waste liquid of the first waste liquid returnable is higher than the pollutant level of the collected waste liquid of the second waste liquid returnable.
8. the segregation of waste gathering-device of claim 7 is characterized in that the COD of the waste liquid that the first waste liquid returnable is collected is higher than the COD of the collected waste liquid of the second waste liquid returnable.
9. method of collecting separately the horizontal waste liquid of high pollution thing in the CMP process, it is characterized in that using the shunting gathering-device of claim 1 to collect the waste liquid that CMP process produces, may further comprise the steps: when wafer enters at least one chemically mechanical polishing lapping device and polishes, send out dirt device output start signal by signal, make the grinding waste liquid of the chemically mechanical polishing lapping device that connects check valve flow into the described first waste liquid returnable; Make the grinding waste liquid of the chemically mechanical polishing lapping device that does not connect check valve flow into the described second waste liquid returnable; Wafer flows into the described second waste liquid returnable through the waste liquid that described cleaning device uses cleaning fluid or deionized water washing to be produced; Behind predetermined processing wafer number of times, the waste liquid in the first and second waste liquid returnable is removed respectively and handle separately separately.
10. the method for claim 9 is characterized in that controlling predetermined wafer polishing sheet number of times, makes the pollutant level of the waste liquid in the second waste liquid returnable be lower than the permission discharge standard.
11. the method for claim 9 is characterized in that adopting burning, cohesion, gelling, micro-filtration, ultrafiltration, electrolysis, electrode cantation, electricity to filter or electrodialytic method is handled the collected waste liquid of the first waste liquid returnable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116769A CN100467227C (en) | 2005-12-19 | 2005-12-19 | Separating collector and collecting method for waste chemico-mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116769A CN100467227C (en) | 2005-12-19 | 2005-12-19 | Separating collector and collecting method for waste chemico-mechanical polishing liquid |
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| Publication Number | Publication Date |
|---|---|
| CN1986158A true CN1986158A (en) | 2007-06-27 |
| CN100467227C CN100467227C (en) | 2009-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101116769A Expired - Fee Related CN100467227C (en) | 2005-12-19 | 2005-12-19 | Separating collector and collecting method for waste chemico-mechanical polishing liquid |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102464359A (en) * | 2010-11-03 | 2012-05-23 | 无锡华润上华半导体有限公司 | Waste water discharge control system and waste water discharge system |
| CN102601739A (en) * | 2011-05-13 | 2012-07-25 | 上海华力微电子有限公司 | Device and method for classifying and recovering waste grinding fluid and deionized water |
| CN102712077A (en) * | 2009-11-20 | 2012-10-03 | 埃尓温·容克尓机械制造有限公司 | Method for separating grinding oil from grinding slurry, a separating station for separating grinding oil from grinding slurry, and a processing plant for separating grinding oil from grinding slurry |
| CN105419645A (en) * | 2014-09-16 | 2016-03-23 | 旭硝子株式会社 | Method of regenerating polishing slurry and method of manufacturing substrate |
| CN112919477A (en) * | 2021-03-12 | 2021-06-08 | 成信实业股份有限公司 | Silicon dioxide regeneration method of semiconductor waste silicon mud |
-
2005
- 2005-12-19 CN CNB2005101116769A patent/CN100467227C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102712077A (en) * | 2009-11-20 | 2012-10-03 | 埃尓温·容克尓机械制造有限公司 | Method for separating grinding oil from grinding slurry, a separating station for separating grinding oil from grinding slurry, and a processing plant for separating grinding oil from grinding slurry |
| CN102712077B (en) * | 2009-11-20 | 2015-02-11 | 埃尓温·容克尓机械制造有限公司 | Method for separating grinding oil from grinding slurry, a separating station for separating grinding oil from grinding slurry, and a processing plant for separating grinding oil from grinding slurry |
| CN102464359A (en) * | 2010-11-03 | 2012-05-23 | 无锡华润上华半导体有限公司 | Waste water discharge control system and waste water discharge system |
| CN102601739A (en) * | 2011-05-13 | 2012-07-25 | 上海华力微电子有限公司 | Device and method for classifying and recovering waste grinding fluid and deionized water |
| CN105419645A (en) * | 2014-09-16 | 2016-03-23 | 旭硝子株式会社 | Method of regenerating polishing slurry and method of manufacturing substrate |
| CN112919477A (en) * | 2021-03-12 | 2021-06-08 | 成信实业股份有限公司 | Silicon dioxide regeneration method of semiconductor waste silicon mud |
| CN112919477B (en) * | 2021-03-12 | 2023-11-03 | 成信实业股份有限公司 | Silicon dioxide regeneration method of semiconductor waste silicon mud |
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| Publication number | Publication date |
|---|---|
| CN100467227C (en) | 2009-03-11 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111205 |
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Effective date of registration: 20111205 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20090311 Termination date: 20181219 |