CN1981428B - 可调谐振器 - Google Patents
可调谐振器 Download PDFInfo
- Publication number
- CN1981428B CN1981428B CN2004800435205A CN200480043520A CN1981428B CN 1981428 B CN1981428 B CN 1981428B CN 2004800435205 A CN2004800435205 A CN 2004800435205A CN 200480043520 A CN200480043520 A CN 200480043520A CN 1981428 B CN1981428 B CN 1981428B
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- electrode
- resonance
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- field
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 11
- 229910002367 SrTiO Inorganic materials 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/326—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator the resonator being an acoustic wave device, e.g. SAW or BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/SE2004/001099 WO2006004470A1 (en) | 2004-07-06 | 2004-07-06 | A tuneable resonator |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1981428A CN1981428A (zh) | 2007-06-13 |
CN1981428B true CN1981428B (zh) | 2012-11-14 |
Family
ID=35783170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800435205A Expired - Fee Related CN1981428B (zh) | 2004-07-06 | 2004-07-06 | 可调谐振器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7548142B2 (zh) |
EP (1) | EP1766772A1 (zh) |
JP (1) | JP2008506302A (zh) |
CN (1) | CN1981428B (zh) |
CA (1) | CA2569533A1 (zh) |
WO (1) | WO2006004470A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7548142B2 (en) * | 2004-07-06 | 2009-06-16 | Telefonaktiebolagert L M Ericsson (Publ) | Tuneable resonator |
US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
US8512800B2 (en) | 2007-12-04 | 2013-08-20 | Triquint Semiconductor, Inc. | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters |
KR101330140B1 (ko) * | 2007-12-21 | 2013-11-18 | 재단법인서울대학교산학협력재단 | 공진 수단의 구동 장치 및 방법 |
US8531083B2 (en) | 2008-02-25 | 2013-09-10 | Resonance Semiconductor Corporation | Devices having a tunable acoustic path length and methods for making same |
US7768364B2 (en) | 2008-06-09 | 2010-08-03 | Maxim Integrated Products, Inc. | Bulk acoustic resonators with multi-layer electrodes |
WO2010085366A2 (en) | 2009-01-26 | 2010-07-29 | Cymatics Laboratories Corporation | Switchable power combiner |
US8334788B2 (en) | 2010-03-04 | 2012-12-18 | Rosemount Inc. | Process variable transmitter with display |
US9622338B2 (en) | 2013-01-25 | 2017-04-11 | Laird Technologies, Inc. | Frequency selective structures for EMI mitigation |
US9173333B2 (en) * | 2013-01-25 | 2015-10-27 | Laird Technologies, Inc. | Shielding structures including frequency selective surfaces |
CN103427778B (zh) * | 2013-08-27 | 2017-12-08 | 张家港恩达通讯科技有限公司 | 基于铁电材料的薄膜体声波谐振器的制备方法、谐振器 |
US9605964B2 (en) * | 2014-01-03 | 2017-03-28 | The Boeing Company | Gyro quadrature stabalization with demodulation phase error nulling |
CN105430867B (zh) * | 2015-11-06 | 2018-01-05 | 北京空间机电研究所 | 一种用于ccd相机的降噪电路 |
CN115996039B (zh) * | 2023-03-23 | 2023-07-11 | 武汉敏声新技术有限公司 | 多工器 |
CN117792332B (zh) * | 2024-02-23 | 2024-05-03 | 电子科技大学 | 一种基于大应力加载结构的电调谐薄膜体声波谐振器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050009A (en) * | 1976-01-09 | 1977-09-20 | The United States Of America As Represented By The Secretary Of The Army | Spectrometer for external detection of magnetic and related double resonance |
CN1383610A (zh) * | 2000-04-06 | 2002-12-04 | 皇家菲利浦电子有限公司 | 包括谐振器的可调谐滤波器装置 |
US20030071300A1 (en) * | 2001-03-30 | 2003-04-17 | Yukihiko Yashima | Tunable thin film capacitor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105683B2 (ja) * | 1986-12-27 | 1995-11-13 | 日本特殊陶業株式会社 | 梯子型電気濾波器の直列共振子の製造方法 |
JP3074389B2 (ja) * | 1990-05-21 | 2000-08-07 | 日本特殊陶業株式会社 | 高周波用ラダー型圧電フィルタ |
US5692279A (en) * | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
JP4036544B2 (ja) * | 1998-09-22 | 2008-01-23 | Tdk株式会社 | 電圧制御発振器 |
JP3860698B2 (ja) * | 1999-12-27 | 2006-12-20 | 京セラ株式会社 | 圧電共振子 |
JP2001332956A (ja) * | 2000-05-19 | 2001-11-30 | Mitsubishi Electric Corp | 薄膜圧電素子基板 |
JP5093946B2 (ja) * | 2001-04-27 | 2012-12-12 | 京セラ株式会社 | 可変容量コンデンサおよび製造方法 |
JP3889343B2 (ja) * | 2001-09-21 | 2007-03-07 | 株式会社東芝 | 可変フィルタ |
JP2003163566A (ja) * | 2001-11-22 | 2003-06-06 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
JP3854212B2 (ja) * | 2002-03-29 | 2006-12-06 | 株式会社東芝 | 高周波フィルタ |
JP2004023593A (ja) * | 2002-06-19 | 2004-01-22 | Mitsubishi Electric Corp | 弾性表面波装置及びその製造方法 |
US7548142B2 (en) * | 2004-07-06 | 2009-06-16 | Telefonaktiebolagert L M Ericsson (Publ) | Tuneable resonator |
-
2004
- 2004-07-06 US US11/573,312 patent/US7548142B2/en not_active Expired - Fee Related
- 2004-07-06 EP EP04749135A patent/EP1766772A1/en not_active Ceased
- 2004-07-06 JP JP2007520252A patent/JP2008506302A/ja active Pending
- 2004-07-06 CA CA002569533A patent/CA2569533A1/en not_active Abandoned
- 2004-07-06 WO PCT/SE2004/001099 patent/WO2006004470A1/en active Application Filing
- 2004-07-06 CN CN2004800435205A patent/CN1981428B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050009A (en) * | 1976-01-09 | 1977-09-20 | The United States Of America As Represented By The Secretary Of The Army | Spectrometer for external detection of magnetic and related double resonance |
CN1383610A (zh) * | 2000-04-06 | 2002-12-04 | 皇家菲利浦电子有限公司 | 包括谐振器的可调谐滤波器装置 |
US20030071300A1 (en) * | 2001-03-30 | 2003-04-17 | Yukihiko Yashima | Tunable thin film capacitor |
Non-Patent Citations (1)
Title |
---|
卢祥军.《改性铅基复合钙钛矿型弛豫铁电陶瓷的结构与微波介电性能》.《中国博士学位论文全文数据库(博士)工程科技II辑》.2002,(第1期),第2、4、6、16页. * |
Also Published As
Publication number | Publication date |
---|---|
US7548142B2 (en) | 2009-06-16 |
EP1766772A1 (en) | 2007-03-28 |
JP2008506302A (ja) | 2008-02-28 |
CN1981428A (zh) | 2007-06-13 |
CA2569533A1 (en) | 2006-01-12 |
US20080055023A1 (en) | 2008-03-06 |
WO2006004470A1 (en) | 2006-01-12 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AOPU DISI CELLULAR TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: CLUSTER CO., LTD. Effective date: 20150122 Owner name: CLUSTER CO., LTD. Free format text: FORMER OWNER: TELEFONAKTIEBOLAGET LM ERICSSON (SE) S-126 25 STOCKHOLM, SWEDEN Effective date: 20150122 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150122 Address after: Texas, USA Patentee after: Telefonaktiebolaget LM Ericsson (publ) Address before: Delaware Patentee before: Clastres LLC Effective date of registration: 20150122 Address after: Delaware Patentee after: Clastres LLC Address before: Stockholm Patentee before: Telefonaktiebolaget LM Ericsson |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20170706 |