CN1383610A - 包括谐振器的可调谐滤波器装置 - Google Patents
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Abstract
本发明说明可调谐滤波器装置,其具有相互耦各的多个谐振器,谐振器中有至少一个包括由铁电材料制成的压电元件并且DC电压源被连接其上。DC电压加于谐振器使其有可能改变其电特性并因此为整个滤波器特性。而且,也公开了具有这种滤波器装置的发射机、接收机装置,和移动电话装置,以及可调谐块声波谐振器。
Description
本发明涉及可调谐滤波器装置。本发明还涉及具有可调谐滤波器装置的发射机、接收机、移动电话装置和无绳数据传输系统，以及涉及可调谐块声波谐振器。
移动电话领域的迅猛发展和无绳电话装置的持续小型化引起对分立元件施加的更高要求。因此，为了使接收机避免来自其它系统之增加的可能干扰信号的影响，高频部件中的高选择性是必须的。这是通过例如带通滤波器实现的，该带通滤波器仅仅传输所限定的频带而抑制在该频带之上和之下的所有频率。
目前，带有陶瓷电磁谐振器的滤波器是用于该目的的装置。但是，这些滤波器的小型化受到电磁波长的限制。由表面声波谐振器建立起来的所谓表面声波(SAW)滤波器能够给予一个相当小的结构。这是因为声波长小于电磁波长4到5个量级。表面声波谐振器包括压电层，在其上提供了指形状电极。施加到输入电极的信号将压电材料激发到机械振动，其以声波的形式在该层的上侧传播，并且通过输出电极被再次变换回到电信号。
另一种方式是通过包括块声波谐振器的块声波(BAW)滤波器形成的。块声波滤波器在其大小、功率和IC兼容性方面具有优点。块声波谐振器在原理上是由三个元件构成的。第一个元件产生声波和包括压电层。在该压电层上面和下面配置的两个电极表示第二个元件。第三个元件具有声学地将基片与由压电层产生的振动隔离开的任务。
谐振器或者滤波器的特性能够被改变是一个有趣的方面。这可以例如通过将谐振器或者滤波器与变容二极管相耦合来实现。在谐振器或者滤波器制造期间有源元件可以被无源元件的材料污染是有源和无源元件组合的缺点。
另外的可能性在US5446306中公开。这里说明了半导体块声波谐振器和半导体块声波滤波器，其包括半导体基片、第一和第二电极、以及配置在它们之间的AlN或者ZnO的压电层。谐振器的谐振频率的变化是在于DC电压被施加在电极上。
本发明的目的是提供一种可调谐滤波器装置，其能够以简单和便宜的方式制造。
该目的是利用可调谐滤波器装置实现的，其包括基片和其上提供的至少两个相互偶合谐振器配置，该谐振器中有至少一个包含有由铁电材料制成的压电元件，并且DC电压源被连接其上。
当DC电压施加于谐振器的第一和第二电极时，谐振器的电特性、谐振频率、和抗谐振频率将改变。如果谐振器是滤波器装置，上述将具有对整个滤波特性的影响。关于诸如AlN和ZnO之铁电材料的介质常数具有对所施加电压的强烈依赖性。这意味着具有由铁电材料制成的压电元件之谐振器电特性被所施加电压所强烈地影响，使得整个滤波器装置的调谐范围基本上较大。
特别优选的是铁电材料选自由下述材料构成的类：有和没有La、Nb或Mn掺杂剂和有和没有过量铅的PbTi1-xZrxO3(0≤x≤1)，LiNbO3，LiTaO3，PbNb2O6，Pb1-xCaxTiO3(0≤x≤1)，[Pb(Mg1/3Nb2/3)O3]x-[PbTiO3]1-x(0≤x≤1)，BaTiO3，有和没有掺杂剂的Ba1-xSrxTiO3(0≤x≤1)，有和没有附加VOx(1≤x≤2.5)和/或SiO2的Ba1-xSrxTiO3，有MgO掺杂剂的Ba1-xSrxTiO3，[Ba1-xSrxTiO3]-Pb1-yCayTiO3(0≤x≤1，0≤y≤1)，有和没有掺杂剂的Ba1-xSrxZryTi1-yO3(0≤x≤1，0≤y≤1)，有和没有过量铅的Ba1-xPbxTiO3(0≤x≤1)，Ba1-xCaxTiO3(0≤x≤1)，(Pb，Ba，Sr)(Mg1/3Nb2/3)xTiy(Zn1/3Nb2/3)1-x-yO3(0≤x≤1，0≤y≤1)，K1-xNaxNbO3(0≤x≤1)，(Cd，Na)NbO3，(Bi，Na)TiO3，(Bi，Na，Pb，Ba)TiO3，Bi7Ti4NbO21，(Ba1-xSrx)2NaNb5O15(0≤x≤1)，(Ba1-xSrx)2KNb5O15(0≤x≤1)，有和没有过量Na+的(Ba1-x+y/8Srx+y/8)2Na1-yNb5O15(0≤x≤1，0≤y≤1)，有和没有过量K+的(Ba1-x+y/8Srx+y/8)2K1-yNb5O15(0≤x≤1，0≤y≤1)，(Ba1-xSrx)2K1-3ySEyNb5O15(0≤x≤1，0≤y≤1，SE＝选自稀土族离子)，SR2Ba4Ti2Nb8O30，a)Pb(Mg1/2W1/2)O3，b)Pb(Fe1/2Nb1/2)O3，c)Pb(Fe2/3W1/3)O3，d)Pb(Ni1/3Nb2/3)O3，e)Pb(Zn1/3Nb2/3)O3，f)Pb(Sc1/2Ta1/2)O3和化合物a)到f)与PbTiO3和/或有和没有过量铅的Pb(Mg1/3Nb2/3)O3的组合。
优选地是，谐振器选自块声波谐振器和表面声波谐振器。
具有块声波谐振器或者表面声波谐振器的滤波器装置能够用高品质因素Q和高耦合因数k制造。
特别优选地是，谐振器用薄膜技术构造。
在基片上用薄膜技术构造谐振器使得有可能获得具有小尺寸的这种滤波器装置。
特别优选地是，块声波谐振器每个都包括下和上电极的谐振器单元和在其间配置的压电层及位于基片和谐振器单元之间的反射单元。
这种块声波谐振器能够在没有麻烦的光刻工艺的情况下制造，因为谐振器的谐振频率是由压电层的层厚定义的。另外，这种块声波谐振器要比诸如单晶谐振器、具有隔膜的谐振器或者具有空气隙的谐振器之其它类型的块声波谐振器更硬。
本发明还涉及发射机、接收机、移动电话装置和无线数据传输系统、提供有可调谐滤波器装置，其包括基片和其上提供的彼此相互耦合的至少两个谐振器的装置，谐振器中至少要有一个具有由铁电材料制成的并且其上连接DC电压源的压电元件。
本发明还涉及可调谐块声波谐振器，其包括基片和其上提供的具有上下电极和其间配置的压电层的谐振器单元，以及位于基片和谐振器单元之间的反射单元，其上连接DC电压源。
介质常数ε对所加电压的强烈依赖性意味着块声波谐振器的电特性能够在宽范围上调谐。
下面参考二个附图和二个实施例来更详细地解释本发明。
图1是表示可调谐块声波滤波器装置实施例结构的剖面图，和
图2是可调谐滤波装置的电路示意图。
图1中，包括两个块声波谐振器的可调谐滤波器装置具有基片1，其包括例如陶瓷材料，具有玻璃平面化层的陶瓷材料，玻璃陶瓷材料，玻璃材料，Si，GaAs，或者蓝宝石。如果使用硅或GaAs，则例如SiO2或玻璃的附加无源层被提供在基片1上。基片1上，有反射单元2，其是由选自聚合物和多孔物质的声反射物质层形成的。所用声反射物质可以是例如气凝胶、干凝胶、玻璃泡沫、泡沫型粘合剂、合成泡沫、或者低密度合成树脂。所用气凝胶可以是例如由硅胶或者多孔SiO2结构构成的无机气凝胶，或者是诸如例如间苯二酚甲醛气凝胶、三聚氰胺甲醛气凝胶、或者酚甲醛气凝胶的有机气凝胶。所用干凝胶可以是例如诸如高凝聚硅酸的无机干凝胶，或者是诸如胶或琼脂的有机干凝胶。所用的泡沫物质可以是例如化学泡沫或物理泡沫聚合物，例如为聚苯乙烯、聚碳酸酯、聚氯乙烯、聚氨酯、聚异氰酸酯、聚异氰尿酸、聚碳化二亚胺、聚甲基丙烯酰胺、聚丙烯酰胺、丙烯醛基-丁腈-苯乙烯共聚物、聚丙烯、或者聚酯。另外，可以使用诸如为酚甲醛树脂或者呋喃树脂的具有高孔隙率的归于碳酸化作用的泡沫合成树脂。所用低密度合成树脂可以是例如交联聚乙烯醚、交联聚芳基醚、聚四氟乙烯、聚对二甲苯、聚乙氯对二甲苯、聚二氯对二甲苯、聚苯并环丁烷、苯乙烯-丁腈共聚物、乙烯-醋酸乙烯酯聚合物或者有机硅氧烷聚合物。包括第一电极3、压电层4和第二电极5的谐振器单元被提供在反射单元2上。电极3和5优选由具有低声阻尼的良好导电材料制成和可以包括例如Ag1-xPtx(0≤x≤1)，50nm到1μm层厚的Pt，1到20nm层厚的Ti/20到600nm层厚的Pt，1到20nm层厚的Ti/20到600nm层厚的Pt/1到20nm层厚的Ti，Al，掺有几个百分点Cu的Al，掺有几个百分点Si的Al，掺有几个百分点Mg的Al，W，Ni，Mo，Au，Cu，Ti/Pt/Al，Ti/Ag，Ti/Ag/Ti，Ti/Ag/Ir，Ti/Ir，Ti/Pd，Ti/Ag1-xPtx(0≤x≤1)，Ti/Ag1-xPdx(0≤x≤1)，Ti/Pt1-xAlx(0≤x≤1)，Pt1-xAlx(0≤x≤1)，Ti/Ag/Pt1-xAlx(0≤x≤1)，Ti/Ag/Ru，Ti/Ag/Ir/IrOx(0≤x≤2)，Ti/Ag/Ru/RuOx(0≤x≤2)，Ti/Ag/Ru/RuxPt1-x(0≤x≤1)，Ti/Ag/Ru/RuxPt1-x/RuOy(0≤x≤1，0≤y≤2)，Ti/Ag/Ru/RuOx/RuyPt1-y(0≤x≤2，0≤y≤1)，Ti/Ag/RuxPt1-x(0≤x≤1)，Ti/Ag/PtxAl1-x(0≤x≤1)，PtxAl1-x/Ag/PtyAl1-y(0≤x≤1，0≤y≤1)，Ti/Ag/Pty(RhOx)1-y(0≤x≤2，0≤y≤1)，Ti/Ag/Rh/RhOx(0≤x≤2)，Ti/Ag/PtxPh1-x(0≤x≤1)，Ti/Ag/Pty(RhOx)1-y/PtzRh1-z(0≤x≤2，0≤y≤1，0≤z≤1)，Ti/AgxPt1-x/Ir(0≤x≤1)，Ti/AgxPt1-x/Ir/IrOy(0≤x≤1，0≤y≤2)，Ti/AgxPt1-x/PtyAl1-y(0≤x≤1，0≤y≤1)，Ti/AgxPt1-x/Ru(0≤x≤1)，Ti≤AgxPt1-x/Ru/RuOy(0≤x≤1，0≤y≤2)，Ti/Ag/Cr，Ti/Ag/Ti/ITO，Ti/Ag/Cr/ITO，Ti/Ag/ITO，Ti/Ni/ITO，Ti/Rh，Ti/Ru，Rh，Rh/RhO2，Ti/Ni/Al/ITO，Ti/Ni，Ti/W/Ti，WxTi1-x(0≤x≤1)，WxTi1-x/Al(Cu)(0≤x≤1)，WxTi1-x/Al(Si)(0≤x≤1)，WxTi1-x/Al(0≤x≤1)或者Ti/Cu用于压电层4的材料可以是例如：有和没有La、Nb或Mn掺杂剂和有和没有过量铅的PbTi1-xZrxO3(0≤x≤1)，LiNbO3，LiTaO3，PbNb2O6，Pb1-xCaxTiO3(0≤x≤1)，[Pb(Mg1/3Nb2/3)O3]x-[PbTiO3]1-x(0≤x≤1)，BaTiO3，有和没有掺杂剂的Ba1-xSrxTiO3(0≤x≤1)，有和没有附加VOx(1≤x≤2.5)和/或SiO2的Ba1-xSrxTiO3(0≤x≤1)，有MgO掺杂剂的Ba1-xSrxTiO3，[Ba1-xSrxTiO3]-Pb1-yCayTiO3(0≤x≤1，0≤y≤1)，有和没有掺杂剂的Ba1-xSrxZryTi1-yO3(0≤x≤1，0≤y≤1)，有和没有过量铅的Ba1-xPbxTiO3(0≤x≤1)，Ba1-xCaxTiO3(0≤x≤1)，(Pb，Ba，Sr)(Mg1/3Nb2/3)xTiy(Zn1/3Nb2/3)1-x-yO3(0≤x≤1，0≤y≤1)，K1-xNaxNbO3(0≤x≤1)，(Cd，Na)NbO3，(Bi，Ba)TiO3，(Bi，Na，Pb，Ba)TiO3，Bi7Ti4NbO21，(Ba1-xSrx)2NaNb5O15(0≤x≤1)，(Ba1-xSrx)2KNb5O15(0≤x≤1)，有和没有过量Na+的(Ba1-x+y/8Srx+y/8)2Na1-yNb5O15(0≤x≤1，0≤y≤1)，有和没有过量K+的(Ba1-x+y/8Srx+y/8)2K1-yNb5O15(0≤x≤1，0≤y≤1)，(Ba1-xSrx)2K1-3ySEyNb5O15(0≤x≤1，0≤y≤1，SE＝稀土族的离子)，SR2Ba4Ti2Nb8O30，a)Pb(Mg1/2W1/2)O3，b)Pb(Fe1/2Nb1/2)O3，c)Pb(Fe2/3W1/3)O3，d)Pb(Ni1/3Nb2/3)O3，e)Pb(Zn1/3Nb2/3)O3，f)Pb(Sc1/2Ta1/2)O3和化合物a)到f)与PbTiO3和/或有和没有过量铅的Pb(Mg1/3Nb2/3)O3的组合。
在本发明另一实施例中，第二反射单元6可以附加地提供在上电极5上。
有机或无机材料或者这些材料组合的保护层7可以被提供在整个滤波器装置上。所用有机材料例如可以是聚苯并环丁烷，或者聚酰亚胺，和无机材料例如可以是Si3N4，SiO2，或者SixOyNz(0≤x≤1，0≤y≤1，0≤z≤1)。
利用刻蚀，接触孔可通过保护层7到达第一电极3和第二电极5。例如Cr/Cu，Cr/Cu/Ni/Sn，或者Cr/Cu/Ni/Au的冲击端接触在接触孔中长出。DC电压能够通过这些冲击端接触被施加到电极3和5。
另外，反射单元2和6可以每个都包括交替高阻和低阻的几层，每层具有1/4谐振波长λ的层厚。低阻材料例如可以是有机或无机的气凝胶，有机或无机干凝胶，玻璃泡沫，泡沫类型的粘合剂，合成泡沫，低密度合成树脂或者SiO2。所用高声阻材料可以例如是HfO2，Mo，Au，Ni，Cu，W，Ti/W/Ti，WxTi1-x(0≤x≤1)，金刚石，AlN，Ta2O5，Pt，Ti/Pt，或者诸如高密度聚乙烯(HDPE)的高密度合成树脂。
如果需要，诸如单晶谐振器，具有隔膜的谐振器或者具有空气隙的谐振器之其它类型的块声波谐振器也可以被使用，或者表面声波谐振器可以被用在具有电极3，5和压电层4之对应不同设计的可调谐滤波装置中。
在本发明的另一实施例中，第二反射单元可以被附加地提供在上电极5上。
另一个替换例是例如丙烯酸酯胶或者环氧胶的附加粘合剂层被提供在反射单元2和基片1之间。丙烯酸酯可以包括例如在固化工艺中聚合的丙烯醛基或者甲基丙烯醛基单体。而且，在多孔SiO2反射单元2的上面或下面，或者上面和下面，可以提供有具有30和300nm之间层厚的SiO2层。这些SiO2层，反射单元2和第二反射单元可以被提供在谐振器单元区域中之基片1的整个区域或者仅仅部分上。
另外，整个滤波器装置可以被提供有至少第一和第二电流源接触。所用电流源接触例如可以是Cr/Cu，Ni/Sn，或者Cr/Cu，Cu/Ni/Sn，或者Cr/Ni，Pb/Sn，或者Cr/Cu，Ni/Au的电镀SMD端接触，或者冲击端接触，或者接触填充(contact pad)。
有关结构和集成的其它替换实施例对本领域技术人员是公知的。因此包括谐振器的可调谐滤波器装置可以具有超过两个谐振器。
图2表示具有两个谐振器R1和R2的滤波器装置。串联谐振器R1出现在输入8和输出9之间。另外，滤波器装置包括并联谐振器R2，其第一连接端子位于谐振器R1和输出9之间，其第二连接端子被连接到地。而且，两个谐振器R1和R2每个都连接到DC电压源。
下面将更详细地解释本发明的实施例，其代表本发明可以如何在实际中实现的例子。
实施例1
具有在其上布置的多孔SiO2层作为反射单元2的丙烯酸酯胶粘合剂层出现在玻璃基片1上。Pt的第一电极3被提供在反射单元2上。具有2％镧掺杂的PbZr0.15Ti0.85O3的压电层4出现在第一电极3和反射单元2的某些部分上。Pt/Ti的第二电极5被提供在压电层4和反射单元2的某些部分上。压电层4和两电极3，5被沉积和构造成使得创建具有两个谐振器单元R1和R2的根据图2的滤波器装置。SiO2保护层7被提供在整个滤波器装置上。利用刻蚀，接触孔开到通过保护层7到达第一电极3和第2电极5。Cr/Cu/Ni/Au冲击端接触在接触孔中长出。对谐振器R1区域中电极5的一个冲击端接触用作为对滤波器装置输入8的接触，对谐振器R1区域中和谐振器R2区域中电极3的对应冲击端接触用作为对滤波器装置输出9的接触。另外，对谐振器R2区域中电极5的冲击端接触被连接到地。DC电压通过这些冲击端接触能够被提供到电极5和3。
两谐振器R1和R2是如此相互调谐使得谐振器R1的谐振频率对应于谐振器R2的抗谐振频率。滤波器装置的滤波特性能够通过将DC电压加到两谐振器被改变，因为压电层4中的铁电材料的介质常数ε被由此减小。可调谐振器的谐振频率和抗谐振频率被由此偏移。
所得滤波器装置被用于移动电话，作为其滤波带能够被改变的可调谐带通滤波器。
实施例2
其上具有300nm厚SiO2层、多孔SiO2反射单元2和30nm厚SiO2层的丙烯酸酯胶粘合剂层出现在玻璃基片1上。Pt/Ti第一电极3提供在30nm厚SiO2层的某些部分上。PbZr0.35Ti0.65O3的压电层4出现在第一电极3和反射单元2的某些部分上。Pt/Ti第二电极5被提供在压电层4和反射单元2的某些部分上。压电层4和两电极3，5被沉积和构造成使得创建具有两个谐振器单元R1和R2的根据图2的滤波器装置。SiO2保护层7被提供在整个滤波器装置上。利用刻蚀，接触孔开到通过保护层7到达第一电极3和第二电极5。Cr/Cu/Ni/Au冲击端接触在接触孔中长出。对谐振器R1区域中电极5的一个冲击端接触用作为对滤波器装置输入8的接触，对谐振器R1区域中电极3的对应冲击端接触用作为对滤波器装置输出9的接触。另外，对谐振器R2区域中电极5的冲击端接触接地。DC电压能够经过这些端接触被施加到电极3和5。
两个谐振器R1和R2被如此相互调谐使得谐振器R1的谐振频率对应于谐振器R2的抗谐振频率。滤波器装置的滤波特性能够通过将DC电压加到两个谐振器被改变，因为压电层4中铁电材料的介质常数ε被由此减小。可调谐振器的谐振频率和抗谐振频率被由此偏移。
所得滤波器装置被用于移动电话，作为其滤波器带能够被改变的可调谐带通滤波器。
实施例3
具有Ta2O5和SiO2交替λ/4层的反射单元2出现在具有SiO2无源层的硅基片1上。Ti/Pt的第一电极3被提供在反射单元2上。具有2％镧掺杂的PbZr0.15Ti0.85O3的压电层4出现在第一电极3和反射单元2的某些部分上。Pt/Ti的第二电极5被提供在压电层4和反射单元2的某些部分上。压电层4和两个电极3，5被沉积和构造成使得创建具有二个谐振器单元R1和R2的根据图2的滤波器装置。Si3N4保护层7被提供在整个滤波器装置上。利用刻蚀，接触孔开到通过保护层7到达第一电极3和第二电极5。Cr/Cu/Ni/Au冲击端接触在接触孔中长出。对谐振器R1区域中电极5的一个冲击端接触用作为对滤波器装置输入8的接触，对谐振器R1区域中和谐振器R2区域中电极3的对应冲击端接触用作为对滤波器装置输出9的接触。另外，对谐振器R2区域中电极5的冲击端接触接地。DC电压经过这些冲击端接触能够被加到电极3和5。
两个谐振器R1和R2被如此相互调谐使得谐振器R1的谐振频率对应于谐振器R2的抗谐振频率。滤波器装置的滤波特性能够通过将DC电压加到两个谐振器被改变，因为压电层4中铁电材料的介质常数ε被由此减小。可调谐谐振器的谐振频率和抗谐振频率被由此偏移。
所得滤波器装置被用于移动电话，作为其滤波带能够被改变的可调谐带通滤波器。
Claims (10)
1.一种可调谐滤波器装置，其包括基片和其上提供的至少两个相互耦合的谐振器装置，这些谐振器中，有至少一个其包含铁电材料的压电元件，并且DC电压源连接其上。
2.权利要求1的可调谐滤波器装置，特征在于铁电材料选自：有和没有La、Nb或Mn掺杂剂和有和没有过量铅的PbTi1-xZrxO3(0≤x≤1)，LiNbO3，LiTaO3，PbNb2O6，Pb1-xCaxTiO3(0≤x≤1)，[Pb(Mg1/3Nb2/3)O3]x-[PbTiO3]1-x(0≤x≤1)，BaTiO3，有和没有掺杂剂的Ba1-xSrxTiO3(0≤x≤1)，有和没有附加VOx(1≤x≤2.5)和/或SiO2的Ba1-xSrxTiO3(0≤x≤1)，有MgO掺杂剂的Ba1-xSrxTiO3(0≤x≤1)，[Ba1-xSrxTiO3]-Pb1-yCayTiO3(0≤x≤1，0≤y≤1)，有和没有掺杂剂的Ba1-xSrxZryTi1-yO3(0≤x≤1，0≤y≤1)，有和没有过量铅的Ba1-xPbxTiO3(0≤x≤1)，Ba1-xCaxTiO3(0≤x≤1)，(Pb，Ba，Sr)(Mg1/3Nb2/3)xTiy(Zn1/3Nb2/3)1-x-yO3(0≤x≤1，0≤y≤1)，K1-xNaxNbO3(0≤x≤1)，(Cd，Na)NbO3，(Bi，Na)TiO3，(Bi，Na，Pb，Ba)TiO3，Bi7Ti4NbO21，(Ba1-xSrx)2NaNb5O15(0≤x≤1)，(Ba1-xSrx)2KNb5O15(0≤x≤1)，有和没有过量Na+的(Ba1-x+y/8Srx+y/8)2Na1-yNb5O15(0≤x≤1，0≤y≤1)，有和没有过量K+的(Ba1-x+y/8Srx+y/8)2K1-yNb5O15(0≤x≤1，0≤y≤1)，(Ba1-xSrx)2K1-3ySEyNb5O15(0≤x≤1，0≤y≤1，SE＝稀土族的离子)，SR2Ba4Ti2Nb8O30，a)Pb(Mg1/2W1/2)O3，b)Pb(Fe1/2Nb1/2)O3，c)Pb(Fe2/3W1/3)O3，d)Pb(Ni1/3Nb2/3)O3，e)Pb(Zn1/3Nb2/3)O3，f)Pb(Sc1/2Ta1/2)O3和化合物a)到f)与PbTiO3和/或有和没有过量铅的Pb(Mg1/3Nb2/3)O3的组合。
3.权利要求1的可调谐滤波器装置，特征在于谐振器是选自块声波谐振器和表面声波谐振器。
4.权利要求3的可调谐滤波器装置，特征在于谐振器以薄膜技术构造。
5.权利要求3的可调谐滤波器装置，特征在于块声波谐振器每个都包括下和上电极的谐振器单元和在其间配置的压电层以及定位在基片和谐振器单元之间的反射单元。
6.一种移动电话装置，安装有可调谐滤波器装置，其包括基片和在其上提供的至少两个相互耦合的谐振器的装置，谐振器中有至少一个具有由铁电材料制成的压电元件，并且DC电压源被连接其上。
7.一种发射机，提供有可调谐滤波器装置，其包括基片和其上提供的至少两个相互耦合的谐振器的装置，谐振器中有至少一个具有由铁电材料制成的压电元件，并且DC电压源被连接其上。
8.一种无线数据传输系统，提供有可调谐滤波器装置，其包括基片和其上提供有至少两个相互耦合的谐振器的装置，谐振器中有至少一个具有由铁电材料制成的压电元件，并且DC电压被连接其上。
9.一种接收机，提供有可调谐滤波器装置，其包括基片和其上提供的至少两个相互耦合的谐振器的装置，谐振器中有至少一个具有由铁电材料制成的压电元件，并且DC电压源被连接其上。
10.一种可调谐块声波谐振器，其包括基片和其上提供的具有下和上电极及在其间配置的压电层的谐振器单元，以及位于基片和谐振器单元之间的反射单元，DC电压源被连接到该谐振器。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00302922.0 | 2000-04-06 | ||
| EP00302922 | 2000-04-06 | ||
| PCT/EP2001/003756 WO2001078229A1 (en) | 2000-04-06 | 2001-04-03 | Tunable filter arrangement comprising resonators. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1383610A true CN1383610A (zh) | 2002-12-04 |
| CN1383610B CN1383610B (zh) | 2010-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN01801595.6A Expired - Fee Related CN1383610B (zh) | 2000-04-06 | 2001-04-03 | 包括谐振器的可调谐滤波器装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6583688B2 (zh) |
| EP (1) | EP1273099A1 (zh) |
| JP (1) | JP2003530750A (zh) |
| CN (1) | CN1383610B (zh) |
| WO (1) | WO2001078229A1 (zh) |
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Families Citing this family (83)
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|---|---|---|---|---|
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| US7275292B2 (en) | 2003-03-07 | 2007-10-02 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for fabricating an acoustical resonator on a substrate |
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| EP1528677B1 (en) * | 2003-10-30 | 2006-05-10 | Agilent Technologies, Inc. | Film acoustically-coupled transformer with two reverse c-axis piezoelectric elements |
| US7332985B2 (en) | 2003-10-30 | 2008-02-19 | Avago Technologies Wireless Ip (Singapore) Pte Ltd. | Cavity-less film bulk acoustic resonator (FBAR) devices |
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| WO2005055265A2 (en) * | 2003-11-26 | 2005-06-16 | The Penn State Research Foundation | Idt electroded piezoelectric diaphragms |
| JP4224708B2 (ja) * | 2004-05-17 | 2009-02-18 | セイコーエプソン株式会社 | 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振器、および電子機器 |
| US7388454B2 (en) | 2004-10-01 | 2008-06-17 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using alternating frame structure |
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7202560B2 (en) | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
| US7791434B2 (en) | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| US7369013B2 (en) * | 2005-04-06 | 2008-05-06 | Avago Technologies Wireless Ip Pte Ltd | Acoustic resonator performance enhancement using filled recessed region |
| US7934884B2 (en) * | 2005-04-27 | 2011-05-03 | Lockhart Industries, Inc. | Ring binder cover |
| US7443269B2 (en) | 2005-07-27 | 2008-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit |
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| FR2890490A1 (fr) * | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
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| JP4735840B2 (ja) * | 2005-12-06 | 2011-07-27 | セイコーエプソン株式会社 | 圧電体積層体、表面弾性波素子、薄膜圧電共振子および圧電アクチュエータ |
| JP4730126B2 (ja) * | 2006-02-22 | 2011-07-20 | パナソニック電工株式会社 | バルク弾性波共振素子及び該製造方法並びにフィルタ回路 |
| US7675388B2 (en) * | 2006-03-07 | 2010-03-09 | Agile Rf, Inc. | Switchable tunable acoustic resonator using BST material |
| US7746677B2 (en) | 2006-03-09 | 2010-06-29 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | AC-DC converter circuit and power supply |
| US7479685B2 (en) | 2006-03-10 | 2009-01-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Electronic device on substrate with cavity and mitigated parasitic leakage path |
| US20070228876A1 (en) * | 2006-03-31 | 2007-10-04 | Chien-Min Sung | Diamond Frequency Control Devices and Associated Methods |
| US7741933B2 (en) * | 2006-06-30 | 2010-06-22 | The Charles Stark Draper Laboratory, Inc. | Electromagnetic composite metamaterial |
| US20090079514A1 (en) * | 2007-09-24 | 2009-03-26 | Tiberiu Jamneala | Hybrid acoustic resonator-based filters |
| US7791435B2 (en) | 2007-09-28 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Single stack coupled resonators having differential output |
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| US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
| US8923794B2 (en) | 2011-11-02 | 2014-12-30 | Triquint Semiconductor, Inc. | Temperature compensation of acoustic resonators in the electrical domain |
| US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
| FR2996061B1 (fr) * | 2012-09-27 | 2015-12-25 | Commissariat Energie Atomique | Structure acoustique comportant au moins un resonateur et au moins une capacite cointegree dans une meme couche piezoelectrique ou ferroelectrique |
| US9225313B2 (en) | 2012-10-27 | 2015-12-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics |
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| FR3026582A1 (fr) * | 2014-09-29 | 2016-04-01 | Commissariat Energie Atomique | Circuit resonant a frequence et a impedance variables |
| US10432167B2 (en) * | 2016-04-01 | 2019-10-01 | Intel Corporation | Piezoelectric package-integrated crystal devices |
| US10389331B2 (en) * | 2017-03-24 | 2019-08-20 | Zhuhai Crystal Resonance Technologies Co., Ltd. | Single crystal piezoelectric RF resonators and filters |
| US11437561B2 (en) * | 2018-11-29 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933230A (en) * | 1986-09-17 | 1990-06-12 | American Cyanamid | Piezoelectric composites |
| JP2790178B2 (ja) * | 1987-06-26 | 1998-08-27 | 株式会社村田製作所 | 電歪共振装置 |
| JP2615977B2 (ja) * | 1989-02-23 | 1997-06-04 | 松下電器産業株式会社 | 誘電体磁器組成物およびこれを用いた積層セラミックコンデンサとその製造方法 |
| DE4020467A1 (de) * | 1990-06-27 | 1992-01-09 | Siemens Ag | Elektrischer vielschichtkondensator mit von einer angelegten spannung abhaengigen steuerbaren kapazitaet mit zwei kondensatorenelektroden und einer steuerelektrode |
| US5166646A (en) * | 1992-02-07 | 1992-11-24 | Motorola, Inc. | Integrated tunable resonators for use in oscillators and filters |
| JP3341357B2 (ja) * | 1993-06-08 | 2002-11-05 | セイコーエプソン株式会社 | 圧電体薄膜素子 |
| US5446306A (en) * | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
| US5422533A (en) * | 1994-03-09 | 1995-06-06 | The United States Of America As Represented By The Secretary Of The Army | Piezoelectric resonator |
| US5864261A (en) * | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
| US6066581A (en) * | 1995-07-27 | 2000-05-23 | Nortel Networks Corporation | Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits |
| US5692279A (en) * | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
| US5714917A (en) * | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
| US6087198A (en) * | 1998-02-12 | 2000-07-11 | Texas Instruments Incorporated | Low cost packaging for thin-film resonators and thin-film resonator-based filters |
| US5872493A (en) * | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
| FI108583B (fi) * | 1998-06-02 | 2002-02-15 | Nokia Corp | Resonaattorirakenteita |
| FI106894B (fi) * | 1998-06-02 | 2001-04-30 | Nokia Mobile Phones Ltd | Resonaattorirakenteita |
| US6248394B1 (en) * | 1998-08-14 | 2001-06-19 | Agere Systems Guardian Corp. | Process for fabricating device comprising lead zirconate titanate |
| FI113211B (fi) * | 1998-12-30 | 2004-03-15 | Nokia Corp | Balansoitu suodatinrakenne ja matkaviestinlaite |
| DE19915247A1 (de) * | 1999-04-03 | 2000-10-05 | Philips Corp Intellectual Pty | Spannungsabhängiger Dünnschichtkondensator |
| JP4327942B2 (ja) * | 1999-05-20 | 2009-09-09 | Ｔｄｋ株式会社 | 薄膜圧電素子 |
-
2001
- 2001-04-03 EP EP01936173A patent/EP1273099A1/en not_active Withdrawn
- 2001-04-03 CN CN01801595.6A patent/CN1383610B/zh not_active Expired - Fee Related
- 2001-04-03 JP JP2001574975A patent/JP2003530750A/ja active Pending
- 2001-04-03 WO PCT/EP2001/003756 patent/WO2001078229A1/en not_active Application Discontinuation
- 2001-04-05 US US09/826,684 patent/US6583688B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1981428B (zh) * | 2004-07-06 | 2012-11-14 | 艾利森电话股份有限公司 | 可调谐振器 |
| CN104917484A (zh) * | 2015-05-28 | 2015-09-16 | 贵州中科汉天下电子有限公司 | 声波谐振器 |
| CN104917476A (zh) * | 2015-05-28 | 2015-09-16 | 贵州中科汉天下电子有限公司 | 一种声波谐振器的制造方法 |
| CN107707216A (zh) * | 2017-10-19 | 2018-02-16 | 成都旭思特科技有限公司 | 增强抗干扰能力的滤波器集成滤波方法 |
| WO2022001390A1 (zh) * | 2020-06-29 | 2022-01-06 | 京东方科技集团股份有限公司 | 压电传感器及其制造方法、检测装置 |
| CN112383287A (zh) * | 2020-11-27 | 2021-02-19 | 广东省科学院半导体研究所 | 声表面波谐振器及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1273099A1 (en) | 2003-01-08 |
| CN1383610B (zh) | 2010-05-26 |
| US20010028285A1 (en) | 2001-10-11 |
| WO2001078229A1 (en) | 2001-10-18 |
| JP2003530750A (ja) | 2003-10-14 |
| US6583688B2 (en) | 2003-06-24 |
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