CN1970230A - 用于蚀刻孔穴的灰浆清理的装置和方法 - Google Patents
用于蚀刻孔穴的灰浆清理的装置和方法 Download PDFInfo
- Publication number
- CN1970230A CN1970230A CNA2006101464827A CN200610146482A CN1970230A CN 1970230 A CN1970230 A CN 1970230A CN A2006101464827 A CNA2006101464827 A CN A2006101464827A CN 200610146482 A CN200610146482 A CN 200610146482A CN 1970230 A CN1970230 A CN 1970230A
- Authority
- CN
- China
- Prior art keywords
- mortar
- abrasion
- atomizing
- fluid
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002002 slurry Substances 0.000 title claims abstract description 33
- 238000004140 cleaning Methods 0.000 title abstract description 13
- 239000004570 mortar (masonry) Substances 0.000 claims description 80
- 239000012530 fluid Substances 0.000 claims description 66
- 239000007921 spray Substances 0.000 claims description 44
- 238000005299 abrasion Methods 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003570 air Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 230000008676 import Effects 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 abstract 2
- 210000003850 cellular structure Anatomy 0.000 abstract 2
- 239000002245 particle Substances 0.000 description 29
- 238000000889 atomisation Methods 0.000 description 15
- 239000011440 grout Substances 0.000 description 12
- -1 304 stainless steel Chemical compound 0.000 description 11
- 238000000227 grinding Methods 0.000 description 11
- 238000000576 coating method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 210000000232 gallbladder Anatomy 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 229910001610 cryolite Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 150000002790 naphthalenes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000004604 Blowing Agent Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 1
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005270 abrasive blasting Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 239000007798 antifreeze agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003899 bactericide agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000011045 chalcedony Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 239000000417 fungicide Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011565 manganese chloride Substances 0.000 description 1
- 235000002867 manganese chloride Nutrition 0.000 description 1
- 229940099607 manganese chloride Drugs 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000009660 micro-sectioning Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001495 sodium tetrafluoroborate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C5/00—Devices or accessories for generating abrasive blasts
- B24C5/02—Blast guns, e.g. for generating high velocity abrasive fluid jets for cutting materials
- B24C5/04—Nozzles therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C11/00—Selection of abrasive materials or additives for abrasive blasts
- B24C11/005—Selection of abrasive materials or additives for abrasive blasts of additives, e.g. anti-corrosive or disinfecting agents in solid, liquid or gaseous form
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
- B24C3/325—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for internal surfaces, e.g. of tubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C7/00—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts
- B24C7/0007—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier
- B24C7/0038—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier the blasting medium being a gaseous stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Coating By Spraying Or Casting (AREA)
- Nozzles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/272,844 | 2005-11-14 | ||
| US11/272,844 US20070111642A1 (en) | 2005-11-14 | 2005-11-14 | Apparatus and methods for slurry cleaning of etch chambers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1970230A true CN1970230A (zh) | 2007-05-30 |
Family
ID=37758692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101464827A Pending CN1970230A (zh) | 2005-11-14 | 2006-11-13 | 用于蚀刻孔穴的灰浆清理的装置和方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20070111642A1 (enExample) |
| EP (1) | EP1785230B1 (enExample) |
| JP (1) | JP5031329B2 (enExample) |
| KR (1) | KR101301097B1 (enExample) |
| CN (1) | CN1970230A (enExample) |
| AT (1) | ATE464978T1 (enExample) |
| DE (1) | DE602006013768D1 (enExample) |
| IL (1) | IL178946A (enExample) |
| SG (1) | SG132602A1 (enExample) |
| TW (1) | TWI421935B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109210374A (zh) * | 2017-06-30 | 2019-01-15 | 北京北方华创微电子装备有限公司 | 进气管路及半导体加工设备 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101091132B1 (ko) | 2010-09-27 | 2011-12-09 | (주)제이솔루션 | 질소가스 이젝터장치 |
| US9815175B2 (en) * | 2012-09-25 | 2017-11-14 | G.D.O. Inc | Abrasive entrainment waterjet cutting |
| US9744645B2 (en) * | 2012-09-25 | 2017-08-29 | G.D.O. Inc. | Abrasive entrainment waterjet cutting |
| WO2014052407A1 (en) * | 2012-09-25 | 2014-04-03 | G.D.O. Inc. | Underwater abrasive entrainment waterjet cutting |
| US9687953B2 (en) * | 2014-06-27 | 2017-06-27 | Applied Materials, Inc. | Chamber components with polished internal apertures |
| US10010106B2 (en) * | 2015-04-30 | 2018-07-03 | Frito-Lay North America, Inc. | Method and apparatus for removing a portion of a food product with an abrasive stream |
| CN105904330A (zh) * | 2016-06-08 | 2016-08-31 | 重庆巨源不锈钢制品有限公司 | 自动抛光装置及其自动抛光方法 |
| US10076821B2 (en) * | 2016-08-15 | 2018-09-18 | G.D.O. Inc | Abrasive entrainment waterjet cutting |
| US10077966B2 (en) * | 2016-08-15 | 2018-09-18 | G.D.O. Inc. | Abrasive entrainment waterjet cutting |
| KR102577058B1 (ko) * | 2021-04-30 | 2023-09-11 | 남근식 | 표면연마용 워터젯 가공장치 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2200587A (en) * | 1937-02-25 | 1940-05-14 | Hydroblast Corp | Method and apparatus for sand blasting |
| US2369576A (en) * | 1943-12-20 | 1945-02-13 | Pangborn Corp | Blast gun |
| US2372957A (en) * | 1943-12-23 | 1945-04-03 | Pangborn Corp | Hydraulic sand feeder |
| GB1105984A (en) * | 1966-02-24 | 1968-03-13 | Abrasive Dev | Improvements in and relating to abrasive guns |
| US4330968A (en) * | 1980-05-02 | 1982-05-25 | Fuji Seiki Machine Works, Ltd. | Two-tank high water pressure wet blasting machine with separate supply reservoir for abrasive particles |
| US4776794A (en) * | 1986-06-03 | 1988-10-11 | Moshe Meller | Cleaning instrument using premixed abrasive liquid |
| EP0332328B1 (en) * | 1988-03-03 | 1992-09-16 | Yoshino Seiki Inc. | Mist-spouting type drilling device |
| US5575705A (en) * | 1993-08-12 | 1996-11-19 | Church & Dwight Co., Inc. | Slurry blasting process |
| US5384990A (en) * | 1993-08-12 | 1995-01-31 | Church & Dwight Co., Inc. | Water blasting process |
| WO1997034737A1 (fr) * | 1996-03-18 | 1997-09-25 | Honda Giken Kogyo Kabushiki Kaisha | Procede et appareil assurant un important renforcement d'un element metallique |
| US6010546A (en) * | 1997-07-24 | 2000-01-04 | Asahi Glass Company, Ltd. | Blasting medium and blasting method employing such medium |
| US5827114A (en) * | 1996-09-25 | 1998-10-27 | Church & Dwight Co., Inc. | Slurry blasting process |
| ATE365443T1 (de) * | 1998-04-24 | 2007-07-15 | Matsushita Electric Industrial Co Ltd | Verfahren zur herstellung eines keramischen mehrschichtigen substrats |
| US6224463B1 (en) * | 1998-11-02 | 2001-05-01 | J.C.J. Metal Processing, Incorporated | Workpiece finishing system and method of operating same |
| JP2000343435A (ja) * | 1999-03-29 | 2000-12-12 | Asahi Glass Co Ltd | ブラストメディア及びブラスト方法 |
| FR2801689B1 (fr) * | 1999-11-29 | 2001-12-28 | Air Liquide | Robinet detendeur avec dispositif de reglage de la basse pression et comportant un systeme d'arret d'urgence |
| JP2002319556A (ja) * | 2001-04-19 | 2002-10-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6554909B1 (en) * | 2001-11-08 | 2003-04-29 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning components using cleaning media |
| US20040202980A1 (en) * | 2003-04-14 | 2004-10-14 | Policicchio Piero A. | Dental prophylaxis and air appliance |
| JP2005108889A (ja) * | 2003-09-26 | 2005-04-21 | Kyocera Corp | 半導体基板の製造方法 |
-
2005
- 2005-11-14 US US11/272,844 patent/US20070111642A1/en not_active Abandoned
-
2006
- 2006-10-31 AT AT06255599T patent/ATE464978T1/de not_active IP Right Cessation
- 2006-10-31 IL IL178946A patent/IL178946A/en active IP Right Grant
- 2006-10-31 DE DE602006013768T patent/DE602006013768D1/de active Active
- 2006-10-31 EP EP06255599A patent/EP1785230B1/en not_active Ceased
- 2006-11-02 SG SG200607533-7A patent/SG132602A1/en unknown
- 2006-11-13 CN CNA2006101464827A patent/CN1970230A/zh active Pending
- 2006-11-13 KR KR1020060111696A patent/KR101301097B1/ko not_active Expired - Fee Related
- 2006-11-14 TW TW095141986A patent/TWI421935B/zh active
- 2006-11-14 JP JP2006307392A patent/JP5031329B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109210374A (zh) * | 2017-06-30 | 2019-01-15 | 北京北方华创微电子装备有限公司 | 进气管路及半导体加工设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE602006013768D1 (de) | 2010-06-02 |
| IL178946A0 (en) | 2007-03-08 |
| KR101301097B1 (ko) | 2013-08-27 |
| TWI421935B (zh) | 2014-01-01 |
| TW200725733A (en) | 2007-07-01 |
| SG132602A1 (en) | 2007-06-28 |
| EP1785230B1 (en) | 2010-04-21 |
| EP1785230A3 (en) | 2007-07-18 |
| KR20070051707A (ko) | 2007-05-18 |
| JP5031329B2 (ja) | 2012-09-19 |
| ATE464978T1 (de) | 2010-05-15 |
| EP1785230A2 (en) | 2007-05-16 |
| US20070111642A1 (en) | 2007-05-17 |
| JP2007173785A (ja) | 2007-07-05 |
| IL178946A (en) | 2012-10-31 |
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