US20070111642A1 - Apparatus and methods for slurry cleaning of etch chambers - Google Patents

Apparatus and methods for slurry cleaning of etch chambers Download PDF

Info

Publication number
US20070111642A1
US20070111642A1 US11/272,844 US27284405A US2007111642A1 US 20070111642 A1 US20070111642 A1 US 20070111642A1 US 27284405 A US27284405 A US 27284405A US 2007111642 A1 US2007111642 A1 US 2007111642A1
Authority
US
United States
Prior art keywords
abrasive slurry
atomized
abrasive
inlet
slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/272,844
Other languages
English (en)
Inventor
Ian Davis
David Laube
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantum Global Technologies LLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/272,844 priority Critical patent/US20070111642A1/en
Assigned to THE BOC GROUP, INC. reassignment THE BOC GROUP, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DAVIS, IAN MARTIN, Laube, David P.
Priority to EP06255599A priority patent/EP1785230B1/en
Priority to DE602006013768T priority patent/DE602006013768D1/de
Priority to IL178946A priority patent/IL178946A/en
Priority to AT06255599T priority patent/ATE464978T1/de
Priority to SG200607533-7A priority patent/SG132602A1/en
Priority to CNA2006101464827A priority patent/CN1970230A/zh
Priority to KR1020060111696A priority patent/KR101301097B1/ko
Priority to JP2006307392A priority patent/JP5031329B2/ja
Priority to TW095141986A priority patent/TWI421935B/zh
Publication of US20070111642A1 publication Critical patent/US20070111642A1/en
Assigned to BOC EDWARDS, INC. reassignment BOC EDWARDS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: THE BOC GROUP, INC.
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BOC EDWARDS, INC.
Assigned to FOX CHASE BANK reassignment FOX CHASE BANK SECURITY AGREEMENT Assignors: QUANTUM GLOBAL TECHNOLOGIES, LLC
Assigned to Quantum Global Technologies LLC reassignment Quantum Global Technologies LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: APPLIED MATERIALS, INC.
Assigned to QUANTUM GLOBAL TECHNOLOGIES, LLC reassignment QUANTUM GLOBAL TECHNOLOGIES, LLC RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: UNIVEST BANK AND TRUST CO., SUCCESSOR BY MERGER TO FOX CHASE BANK
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C5/00—Devices or accessories for generating abrasive blasts
    • B24C5/02—Blast guns, e.g. for generating high velocity abrasive fluid jets for cutting materials
    • B24C5/04—Nozzles therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C11/00—Selection of abrasive materials or additives for abrasive blasts
    • B24C11/005—Selection of abrasive materials or additives for abrasive blasts of additives, e.g. anti-corrosive or disinfecting agents in solid, liquid or gaseous form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/325—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for internal surfaces, e.g. of tubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C7/00—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts
    • B24C7/0007—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier
    • B24C7/0038—Equipment for feeding abrasive material; Controlling the flowability, constitution, or other physical characteristics of abrasive blasts the abrasive material being fed in a liquid carrier the blasting medium being a gaseous stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the invention is directed to cleaning apparatus and methods, particularly, but not limited to, apparatus and methods for cleaning products and chambers made during semiconductor manufacturing.
  • Removal of contaminants from etch chamber components traditionally uses carbon dioxide pellet blasting, abrasive bead blasting, solvents, strong oxidizers, inorganic acids/bases or high temperature thermal decomposition. Depending on the contaminant/substrate combination, these produce marginal results in contaminant removal and providing high cleanliness surfaces for chamber reuse. These methods may also damage the substrate during the cleaning process particularly when using conventional mechanical cleaning methods for anodized and coated aluminum substrates. More recent designs of chamber components make use of plasma sprayed dielectric coatings such as Al 2 O 3 , ZrO 2 , and Y 2 O 3 . These coatings are applied to ceramic and anodized aluminum substrates where coating adhesion is marginal at best and are easily damaged during cleaning due to the aggressive nature of conventional abrasive blasting techniques.
  • apparatus and methods are presented which overcome or reduce deficiencies associated with previous apparatus and methods in cleaning semiconductor etching chambers and components.
  • a first aspect of the invention is an apparatus, one apparatus comprising:
  • Apparatus within the invention include those wherein the container may have an agitator adapted to maintain the abrasive particles well dispersed.
  • “Well dispersed”, as used herein, means that the abrasive slurry may be a homogenous mixture of all ingredients.
  • the source of atomizing fluid may be selected from a membrane unit, an absorption unit, a cryogenic unit, a container of fluid, a compressor, a pipeline, a gas cabinet, and combinations thereof.
  • the source of atomizing fluid may comprise a source of one or more inert gases and combinations thereof.
  • the inert gas may be selected from any gas that would be considered inert for the cleaning process, including, but not limited to, nitrogen, argon, air, nitrogen enriched air, noble gases other than argon, and combinations thereof.
  • the atomizing head may comprise a venturi.
  • Apparatus may comprise a pressure regulator adapted to adjust pressure of the atomizing fluid entering the atomizing head.
  • the pressure regulator may be adapted to adjust pressure of the atomized abrasive slurry exiting the atomizing head.
  • Another aspect of the invention is a method of cleaning, one method comprising directing an atomized abrasive slurry onto at least some internal surfaces of a semiconductor etching chamber or chamber components.
  • Methods of the invention include those wherein the directing comprises controlling pressure of the atomized abrasive slurry.
  • the pressure may generally be controlled within a pressure ranging from about 25 to about 150 psig. Pressures higher than 150 psig may be used if necessary to remove debris and the underlying substrate is not damaged.
  • the density of the atomized abrasive slurry may need to be reduced; pressures lower than 25 psig may not be able to provide the desired cleaning efficiency, but may be used if the density of the atomized abrasive slurry is increased.
  • Methods of the invention include those methods wherein the directing step comprises controlling density of the atomized abrasive slurry.
  • the directing step comprises controlling density of the atomized abrasive slurry.
  • ways are available for controlling density of the atomized slurry, including adding more liquid to the abrasive slurry, reducing the amount and/or density of the abrasive particles in the abrasive slurry, reducing the density of the atomizing fluid and/or increasing its flow rate, and combinations of these.
  • the density of the atomized abrasive slurry may be controlled within a density ranging from about 0.01 gm/cc to about 0.2 gm/cc.
  • Other methods of the invention include controlling momentum of the atomized abrasive slurry exiting the atomizing head.
  • Methods of the invention include controlling momentum of the atomized abrasive slurry at momentum ranging from about 100,000 gm-cm/sec to about 300,000 gm-cm/sec.
  • Other methods may include maintaining the abrasive slurry in the abrasive slurry container in well dispersed state, and methods wherein the composition of the abrasive slurry in the container is controlled.
  • FIGS. 1 and 2 are schematic side elevation views of first and second apparatus embodiments according to the present invention.
  • Apparatus of the invention comprise an atomizing head functioning to produce an atomized abrasive slurry.
  • the head comprises an abrasive slurry inlet, an atomizing fluid inlet, and an atomized abrasive slurry outlet.
  • the atomizing head may include any internal volume capable of producing an atomized abrasive slurry, including a venturi, a converging-diverging nozzle, a converging nozzle, and other nozzle configurations.
  • Apparatus of the present invention are concerned with the third category of atomization.
  • Internal atomization is characterized by confinement of the liquid and atomizing fluid in a contacting chamber.
  • the mode of introduction of the two fluids into this chamber can vary considerably and has a direct influence on the characteristics of the atomized slurry that exits from the chamber.
  • the internal geometry of this chamber also affects the specific characteristics of the liquid/atomizing fluid mixture.
  • This mode of atomization generally affords an excellent quality of atomization, that is, an atomized slurry composed of very small slurry droplets with a very narrow droplet size distribution about these small diameters.
  • this atomization quality is naturally a function of the atomizing fluid delivery rate employed and the pressure level prevailing in the interior of the atomizing chamber.
  • the atomized slurry is created mainly by shearing of the jet of liquid slurry by the atomizing fluid.
  • the geometry of the outlets for the two fluids completely determines the quality of the atomization, and droplet size analysis of the drops resulting from the contact may show a relatively wide diameter distribution (simultaneous-presence of small and large droplets).
  • FIG. 1 is a schematic side elevation view of one apparatus embodiment 100 according to the present invention, comprising an atomizing head 2 having an atomizing fluid inlet 4 , an abrasive slurry inlet 6 , and an atomized abrasive slurry outlet 8 .
  • Atomizing head 2 may be made from any suitable material or combination of materials, such as metal, plastic, and combinations thereof. Suitable metals include aluminum, stainless steels, such as 304 stainless steel. The stainless steel may be electropolished, but this is not a requirement of the invention.
  • the internal flow channels include a converging nozzle 10 , a parallel throat section 12 , and a diverging nozzle 14 .
  • Throat 12 includes in this embodiment an inlet port or orifice 16 for abrasive slurry, which is drawn into throat 12 by negative pressure caused by flowing fluidizing fluid.
  • Abrasive slurry may be drawn up from one or more abrasive slurry containers 20 , and head 2 may have one or more fluid connections to one or more sources of fluidizing fluid 18 .
  • this particular flow configuration represents a venturi, the invention is not so limited.
  • atomizing fluid inlet may be comprised of one, two, or more than two inlet orifices, as may abrasive inlet orifice 16 .
  • atomizing fluid inlet may be comprised of one, two, or more than two inlet orifices, as may abrasive inlet orifice 16 .
  • FIG. 2 is a schematic side elevation view of another apparatus embodiment 200 according to the present invention, similar to embodiment 100 illustrated in FIG. 1 , comprising an atomizing head 22 having an atomizing fluid inlet 4 , an abrasive slurry inlet 6 , and an atomized abrasive slurry outlet 8 .
  • the internal flow channels include a more streamlined converging-diverging nozzle 24 , 28 , and a throat 26 .
  • Throat 26 also includes in this embodiment an inlet port or orifice 16 for abrasive slurry, which is drawn into throat 26 by negative pressure caused by flowing fluidizing fluid.
  • Abrasive slurry may be drawn up from one or more abrasive slurry containers 20 , and head 2 may have one or more fluid connections to one or more sources of fluidizing fluid 18 .
  • abrasive slurry container fluidly connected to the abrasive slurry inlet of the atomizing head.
  • the container functions to define a space for a slurry comprising water, abrasive particles, and other optional ingredients, depending on the particular cleaning task, for example the type and quantity of debris or deposits to be removed, the underlying substrate composition and hardness, and the properties of any substrate coating, such as a refractory or dielectric coating.
  • the abrasive slurry container may be under atmospheric pressure, at a slight vacuum, or at a pressure above atmospheric, although the pressure in the container is not critical.
  • the container may be closed or open to the atmosphere. If the container is at a pressure less than or greater than atmospheric the container will necessarily be manufactured to withstand these conditions.
  • the container may comprise an outer shell with a bladder arrangement, where abrasive slurry is held inside the bladder. Air or other fluid may be used to force slurry out of the bladder, and a vacuum may assist loading the bladder with the abrasive slurry.
  • the configuration of the abrasive slurry container is not critical, as long the abrasive particles are able to be kept suspended, or reasonably so, in the container. There may be occasions when there are more abrasive particles than required for a particular task, in which case not all abrasives particles will need to be suspended. Some may be allowed to settle out to the bottom of the container until needed.
  • the materials of construction of the slurry container are not critical.
  • the container may be metal, plastic, or some combination thereof.
  • a refractory or ceramic container may even be used, and a liner may be used.
  • the liner may be a ceramic or plastic material.
  • Suspension aids may be used. These may be chemical, mechanical or combination thereof.
  • a mechanical suspension aide may comprise one or more stirring or agitating device.
  • a chemical suspension aide may comprise one or more suspension aide chemicals. Examples of these latter are discussed further herein.
  • Apparatus of the invention may comprise a source of atomizing fluid fluidly connected to the atomizing fluid inlet.
  • the source of atomizing fluid is selected from a membrane unit, an absorption unit, a cryogenic unit, a container of fluid, a compressor, a pipeline, a gas cabinet, and combinations thereof.
  • the source of atomizing fluid may comprise a source of one or more inert gases and combinations thereof. If used, the inert gas may be selected from sources of nitrogen, argon, air, nitrogen enriched air, noble gases other than argon, and combinations and mixtures thereof.
  • the atomizing fluid need not be a pure gas.
  • the atomizing fluid may be air, or nitrogen generated by a membrane separation unit producing nitrogen enriched air.
  • the source of atomizing fluid is fluidly connected to the atomizing head by one or more conduits, which may include one or more pressure regulators adapted to adjust pressure of the atomizing fluid as it enters the atomizing head.
  • the pressure regulator may be adapted to adjust pressure of the atomized abrasive slurry as well.
  • the pressure of the source of atomizing fluid may be any pressure required to atomize a particular slurry and perform the cleaning function.
  • the pressure of the source of atomizing fluid may be controlled, such as by use of a gas cabinet, or it may be taken from a pipeline where there is little control over the pressure of the atomizing fluid in the pipeline.
  • methods of the invention include directing an atomized abrasive slurry onto at least some internal surfaces of a semiconductor etching chamber.
  • the methods include generating the atomized abrasive slurry by flowing an atomizing fluid through an atomizing head, as described.
  • Generating the atomized abrasive slurry may comprise controlling pressure of the atomized abrasive slurry exiting the atomizing head at a pressure ranging from about 25 to about 150 psig.
  • the generating may comprise controlling density of the atomized abrasive slurry to a density ranging from about 0.01 gm/cc to about 0.2 gm/cc.
  • the momentum of the atomized abrasive slurry at the workpiece may be controlled by controlling the momentum of the atomized abrasive slurry as it exits the atomizing head.
  • the momentum of the atomized abrasive slurry exiting the atomizing head may be controlled with in a range of from about 100,000 gm-cm/sec to about 300,000 gm-cm/sec.
  • the momentum of the atomized abrasive slurry as it exits the atomizing head may be controlled by adjusting the pressure of the atomizing fluid as it enters the atomizing head, the amount of slurry entering the atomizing head, the density of the abrasive slurry, or any combination of these.
  • the abrasive slurry may be maintained in a well-dispersed state in the abrasive slurry container.
  • this means the abrasive slurry may be a homogenous mixture of all ingredients.
  • Abrasive particles useful in the invention may be selected from those commonly used in the abrasive art, however, the abrasive particles (size and composition) will be chosen with the degree of surface roughness, coating thickness change, and adhesion properties in mind. In choosing an appropriate abrasive particle, characteristics such as hardness, compatibility with the intended workpiece, particle size, reactivity with the workpiece, as well as heat conductivity may be considered.
  • composition of abrasive particles useful in the invention can be divided into two classes: natural abrasives and manufactured abrasives.
  • natural abrasives include: diamond, corundum, emery, garnet, buhrstone, chert, quartz, sandstone, chalcedony, flint, quartzite, silica, feldspar, pumice and talc.
  • Examples of manufactured abrasives include: boron carbide, cubic boron nitride, fused alumina, ceramic aluminum oxide, heat treated aluminum oxide, alumina zirconia, glass, silicon carbide, iron oxides, tantalum carbide, cerium oxide, tin oxide, titanium carbide, synthetic diamond, manganese dioxide, zirconium oxide, and silicon nitride.
  • Abrasive particles useful in the invention typically and preferably have a particle size ranging from about 0.1 micrometer to about 1500 micrometers, more preferably ranging from about 0.1 micrometer to about 1300 micrometers.
  • the abrasive particles preferably have an average particle size ranging from about 0.1 micrometer to about 700 micrometers, more preferably ranging from about 1 to about 150 micrometers, particularly preferably from about 1 to about 80 micrometers. It is preferred that abrasive particles used in the invention have a Moh's hardness of at least 8, more preferably above 9; however, for specific applications, softer particles may be used.
  • abrasive particle includes agglomerates of individual abrasive particles.
  • An abrasive agglomerate is formed when a plurality of abrasive particles are bonded together with a binder to form a larger abrasive particle which may have a specific particulate structure.
  • the plurality of particles which form the abrasive agglomerate may comprise more than one type of abrasive particle and a binder.
  • fillers are inorganic particulate matter which comprise apparatus which are substantially inert or non-reactive with respect to the surface acted upon by the abrasive.
  • active (i.e. reactive) fillers are used, sometimes referred to in the abrasives art as grinding aids.
  • These fillers interact beneficially with the workpiece during use.
  • the grinding aid may either 1) decrease the friction between the abrasive particles and the workpiece being abraded, 2) prevent the abrasive particle from “capping”, i.e. prevent metal particles from becoming welded to the tops of the abrasive particles, 3) decrease the interface temperature between the abrasive particles and the workpiece or 4) decrease the required grinding force.
  • Grinding aids encompass a wide variety of different materials and can be inorganic or organic based.
  • Examples of chemical groups of grinding aids useful in this invention include waxes, organic halide compounds, halide salts and metals and their alloys.
  • the organic halide compounds will typically break down during abrading and release a halogen acid or a gaseous halide compound.
  • Examples of such materials include chlorinated waxes like tetrachloronaphthalene, pentachloronaphthalene; and polyvinyl chloride.
  • halide salts include sodium chloride, potassium cryolite, sodium cryolite, ammonium cryolite, potassium tetrafluoroborate, sodium tetrafluoroborate, silicon fluorides, potassium chloride, magnesium chloride.
  • metals include, tin, lead, bismuth, cobalt, antimony, cadmium, iron titanium.
  • Other miscellaneous grinding aids include sulfur, organic sulfur compounds, graphite and metallic sulfides. It is also within the scope of this invention to use a combination of different grinding aids and in some instances this may produce a synergistic effect.
  • the above mentioned examples of grinding aids is meant to be a representative showing of grinding aids, and it is not meant to encompass all grinding aids.
  • Grinding aids may be used in abrasive slurries useful in the invention in amounts ranging from about 0.1 to about 10 dry weight percent, more preferably from about 0.5 to about 5.0 weight percent, based on total weight of slurry. If non-reactive fillers are employed they may be used up to 50 dry weight percent.
  • Abrasive slurries useful in the invention may contain any number of conventional additives such as one or more additional components, such as, for example, plasticizer, chelating agent, pH modifier, defoamer, foaming agent, reinforcing polymer, anti-freeze agent, suspension aid, bactericide, fingicide, and/or thickener.
  • additional components such as, for example, plasticizer, chelating agent, pH modifier, defoamer, foaming agent, reinforcing polymer, anti-freeze agent, suspension aid, bactericide, fingicide, and/or thickener.
  • Abrasive slurries of the invention may be prepared by mixing abrasive particles having known particle size ranging from 5 micrometers and known particle size distribution ranging from 1-75 micrometers with deionized water, and optionally other materials, to achieve slurry density ranging from about 0.01 gm/cc to about 0 . 2 gm/cc.
  • the slurry may be mixed for 20 minutes at 1200 rpm using a high shear mixer, and the mixer may be left on during use of the slurry, but at lower rpm, in order to maintain a well dispersed slurry.
  • the abrasive slurry may be converted into an atomized spray using an atomizing head having a venturi, similar to that illustrated schematically in FIG. 1 .
  • the atomizing head may be manufactured out of aluminum, and may have one or more slurry inlet orifices of diameter of about 1 cm, one or more air (atomizing fluid) inlet orifices of diameter of 1 cm, and one or more atomized slurry outlet orifices having a diameter of 2 cm.
  • the abrasive slurry may be fed to the atomizing head through a flexible stainless steel tube, the abrasive slurry drawn into the atomizing head by air entering the atomizing head at a pressure of about 100 psig.
  • the atomized slurry emerges from the atomizing head at a pressure of about 50 psig.
  • the slurry tank may be maintained stirred as mentioned above.
  • the slurry tank may be at atmospheric pressure and room temperature, although these conditions are simply convenient and not required.
  • the atomized slurry may be directed at dielectric-coated surfaces of an etch chamber having deposits of silicon, silicon carbide, and other debris on the dielectric surface.
  • the atomized slurry may be directed at the surfaces at a 90° angle, although other angles may be used.
  • the pre-test roughness (Ra) of the dielectric surfaces are measured, as well as the post-test roughness after 30 seconds of contacting the atomized slurry to the dielectric surfaces.
  • Ra is a common measure of roughness used in the abrasives industry. “Ra” is defined as the arithmetic mean of the departures of the roughness profile from the mean line. Ra may be measured with a profilometer probe, which has a diamond tipped stylus. In general, the lower the Ra value, the smoother or finer the workpiece surface finish. The profilometer known under the trade designation Perthen M4P may be used. Thickness of coatings may be determined by microsection techniques known in the art.
  • Apparatus and methods of the present invention may to be used to effectively remove debris from surfaces of semiconductor etching chambers.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Nozzles (AREA)
US11/272,844 2005-11-14 2005-11-14 Apparatus and methods for slurry cleaning of etch chambers Abandoned US20070111642A1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US11/272,844 US20070111642A1 (en) 2005-11-14 2005-11-14 Apparatus and methods for slurry cleaning of etch chambers
EP06255599A EP1785230B1 (en) 2005-11-14 2006-10-31 Method for slurry cleaning of etch chambers
DE602006013768T DE602006013768D1 (de) 2005-11-14 2006-10-31 Verfahren zur Reinigung von Ätzkammern mit Schleif-Suspension
IL178946A IL178946A (en) 2005-11-14 2006-10-31 Apparatus and methods for slurry cleaning of etch chambers
AT06255599T ATE464978T1 (de) 2005-11-14 2006-10-31 Verfahren zur reinigung von ätzkammern mit schleif-suspension
SG200607533-7A SG132602A1 (en) 2005-11-14 2006-11-02 Apparatus and methods for slurry cleaning of etch chambers
KR1020060111696A KR101301097B1 (ko) 2005-11-14 2006-11-13 에칭 챔버의 슬러리 클리닝용 장치 및 방법
CNA2006101464827A CN1970230A (zh) 2005-11-14 2006-11-13 用于蚀刻孔穴的灰浆清理的装置和方法
JP2006307392A JP5031329B2 (ja) 2005-11-14 2006-11-14 エッチ室をスラリー洗浄するための装置と方法
TW095141986A TWI421935B (zh) 2005-11-14 2006-11-14 以漿料清洗蝕刻容室之裝置及方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/272,844 US20070111642A1 (en) 2005-11-14 2005-11-14 Apparatus and methods for slurry cleaning of etch chambers

Publications (1)

Publication Number Publication Date
US20070111642A1 true US20070111642A1 (en) 2007-05-17

Family

ID=37758692

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/272,844 Abandoned US20070111642A1 (en) 2005-11-14 2005-11-14 Apparatus and methods for slurry cleaning of etch chambers

Country Status (10)

Country Link
US (1) US20070111642A1 (enExample)
EP (1) EP1785230B1 (enExample)
JP (1) JP5031329B2 (enExample)
KR (1) KR101301097B1 (enExample)
CN (1) CN1970230A (enExample)
AT (1) ATE464978T1 (enExample)
DE (1) DE602006013768D1 (enExample)
IL (1) IL178946A (enExample)
SG (1) SG132602A1 (enExample)
TW (1) TWI421935B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140094093A1 (en) * 2012-09-25 2014-04-03 Paul L. Miller Underwater Abrasive Entrainment Waterjet Cutting
WO2016176108A1 (en) * 2015-04-30 2016-11-03 Frito-Lay North America, Inc. Method and apparatus for removing a portion of a food product with an abrasive stream
US20170151650A1 (en) * 2012-09-25 2017-06-01 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US20170151651A1 (en) * 2012-09-25 2017-06-01 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US9687953B2 (en) 2014-06-27 2017-06-27 Applied Materials, Inc. Chamber components with polished internal apertures
US20180043505A1 (en) * 2016-08-15 2018-02-15 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US20180080734A1 (en) * 2016-08-15 2018-03-22 Paul L. Miller Abrasive Entrainment Waterjet Cutting

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101091132B1 (ko) 2010-09-27 2011-12-09 (주)제이솔루션 질소가스 이젝터장치
CN105904330A (zh) * 2016-06-08 2016-08-31 重庆巨源不锈钢制品有限公司 自动抛光装置及其自动抛光方法
CN109210374B (zh) * 2017-06-30 2021-06-08 北京北方华创微电子装备有限公司 进气管路及半导体加工设备
KR102577058B1 (ko) * 2021-04-30 2023-09-11 남근식 표면연마용 워터젯 가공장치

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2200587A (en) * 1937-02-25 1940-05-14 Hydroblast Corp Method and apparatus for sand blasting
US2369576A (en) * 1943-12-20 1945-02-13 Pangborn Corp Blast gun
US2372957A (en) * 1943-12-23 1945-04-03 Pangborn Corp Hydraulic sand feeder
US4330968A (en) * 1980-05-02 1982-05-25 Fuji Seiki Machine Works, Ltd. Two-tank high water pressure wet blasting machine with separate supply reservoir for abrasive particles
US4776794A (en) * 1986-06-03 1988-10-11 Moshe Meller Cleaning instrument using premixed abrasive liquid
US5004382A (en) * 1988-03-03 1991-04-02 Yoshino Seiki Inc. Mist-spouting type drilling device
US5384990A (en) * 1993-08-12 1995-01-31 Church & Dwight Co., Inc. Water blasting process
US5575705A (en) * 1993-08-12 1996-11-19 Church & Dwight Co., Inc. Slurry blasting process
US5827114A (en) * 1996-09-25 1998-10-27 Church & Dwight Co., Inc. Slurry blasting process
US6010546A (en) * 1997-07-24 2000-01-04 Asahi Glass Company, Ltd. Blasting medium and blasting method employing such medium
US6099391A (en) * 1996-03-18 2000-08-08 Honda Giken Kogyo Kabushiki Kaisha Method and apparatus for highly strengthening metal member
US6224463B1 (en) * 1998-11-02 2001-05-01 J.C.J. Metal Processing, Incorporated Workpiece finishing system and method of operating same
US20020155650A1 (en) * 2001-04-19 2002-10-24 Shinichi Nakabayshi Fabrication method of semiconductor integrated circuit device
US6478878B1 (en) * 1999-03-29 2002-11-12 Asahi Glass Company, Limited Blasting medium and blasting method
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
US6740183B1 (en) * 1998-04-24 2004-05-25 Matsushita Electric Industrial Co., Ltd. Method of producing ceramic multi-layered substrate
US20040202980A1 (en) * 2003-04-14 2004-10-14 Policicchio Piero A. Dental prophylaxis and air appliance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1105984A (en) * 1966-02-24 1968-03-13 Abrasive Dev Improvements in and relating to abrasive guns
FR2801689B1 (fr) * 1999-11-29 2001-12-28 Air Liquide Robinet detendeur avec dispositif de reglage de la basse pression et comportant un systeme d'arret d'urgence
JP2005108889A (ja) * 2003-09-26 2005-04-21 Kyocera Corp 半導体基板の製造方法

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2200587A (en) * 1937-02-25 1940-05-14 Hydroblast Corp Method and apparatus for sand blasting
US2369576A (en) * 1943-12-20 1945-02-13 Pangborn Corp Blast gun
US2372957A (en) * 1943-12-23 1945-04-03 Pangborn Corp Hydraulic sand feeder
US4330968A (en) * 1980-05-02 1982-05-25 Fuji Seiki Machine Works, Ltd. Two-tank high water pressure wet blasting machine with separate supply reservoir for abrasive particles
US4776794A (en) * 1986-06-03 1988-10-11 Moshe Meller Cleaning instrument using premixed abrasive liquid
US5004382A (en) * 1988-03-03 1991-04-02 Yoshino Seiki Inc. Mist-spouting type drilling device
US5384990A (en) * 1993-08-12 1995-01-31 Church & Dwight Co., Inc. Water blasting process
US5575705A (en) * 1993-08-12 1996-11-19 Church & Dwight Co., Inc. Slurry blasting process
US6099391A (en) * 1996-03-18 2000-08-08 Honda Giken Kogyo Kabushiki Kaisha Method and apparatus for highly strengthening metal member
US5827114A (en) * 1996-09-25 1998-10-27 Church & Dwight Co., Inc. Slurry blasting process
US6010546A (en) * 1997-07-24 2000-01-04 Asahi Glass Company, Ltd. Blasting medium and blasting method employing such medium
US6740183B1 (en) * 1998-04-24 2004-05-25 Matsushita Electric Industrial Co., Ltd. Method of producing ceramic multi-layered substrate
US6224463B1 (en) * 1998-11-02 2001-05-01 J.C.J. Metal Processing, Incorporated Workpiece finishing system and method of operating same
US6478878B1 (en) * 1999-03-29 2002-11-12 Asahi Glass Company, Limited Blasting medium and blasting method
US20020155650A1 (en) * 2001-04-19 2002-10-24 Shinichi Nakabayshi Fabrication method of semiconductor integrated circuit device
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
US20040202980A1 (en) * 2003-04-14 2004-10-14 Policicchio Piero A. Dental prophylaxis and air appliance

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9744643B2 (en) * 2012-09-25 2017-08-29 G.D.O. Inc Apparatus for underwater abrasive entrainment waterjet cutting
US9446500B2 (en) * 2012-09-25 2016-09-20 G.D.O. Inc. Underwater abrasive entrainment waterjet cutting method
US20140094093A1 (en) * 2012-09-25 2014-04-03 Paul L. Miller Underwater Abrasive Entrainment Waterjet Cutting
US20170151650A1 (en) * 2012-09-25 2017-06-01 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US20170151651A1 (en) * 2012-09-25 2017-06-01 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US20170157743A1 (en) * 2012-09-25 2017-06-08 Paul L. Miller Apparatus for Underwater Abrasive Entrainment Waterjet Cutting
US9815175B2 (en) * 2012-09-25 2017-11-14 G.D.O. Inc Abrasive entrainment waterjet cutting
US9744645B2 (en) * 2012-09-25 2017-08-29 G.D.O. Inc. Abrasive entrainment waterjet cutting
US10189141B2 (en) 2014-06-27 2019-01-29 Applied Materials, Inc. Chamber components with polished internal apertures
US9687953B2 (en) 2014-06-27 2017-06-27 Applied Materials, Inc. Chamber components with polished internal apertures
US11370078B2 (en) * 2014-06-27 2022-06-28 Applied Materials, Inc. Chamber components with polished internal apertures
US20220297256A1 (en) * 2014-06-27 2022-09-22 Applied Materials, Inc. Chamber components with polished internal apertures
US11724353B2 (en) * 2014-06-27 2023-08-15 Applied Materials, Inc. Chamber components with polished internal apertures
US20230339065A1 (en) * 2014-06-27 2023-10-26 Applied Materials, Inc. Chamber components with polished internal apertures
US12162115B2 (en) * 2014-06-27 2024-12-10 Applied Materials, Inc. Chamber components with polished internal apertures
US10010106B2 (en) 2015-04-30 2018-07-03 Frito-Lay North America, Inc. Method and apparatus for removing a portion of a food product with an abrasive stream
WO2016176108A1 (en) * 2015-04-30 2016-11-03 Frito-Lay North America, Inc. Method and apparatus for removing a portion of a food product with an abrasive stream
US20180043505A1 (en) * 2016-08-15 2018-02-15 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US20180080734A1 (en) * 2016-08-15 2018-03-22 Paul L. Miller Abrasive Entrainment Waterjet Cutting
US10076821B2 (en) * 2016-08-15 2018-09-18 G.D.O. Inc Abrasive entrainment waterjet cutting
US10077966B2 (en) * 2016-08-15 2018-09-18 G.D.O. Inc. Abrasive entrainment waterjet cutting

Also Published As

Publication number Publication date
DE602006013768D1 (de) 2010-06-02
IL178946A0 (en) 2007-03-08
KR101301097B1 (ko) 2013-08-27
TWI421935B (zh) 2014-01-01
TW200725733A (en) 2007-07-01
SG132602A1 (en) 2007-06-28
EP1785230B1 (en) 2010-04-21
EP1785230A3 (en) 2007-07-18
KR20070051707A (ko) 2007-05-18
JP5031329B2 (ja) 2012-09-19
ATE464978T1 (de) 2010-05-15
EP1785230A2 (en) 2007-05-16
JP2007173785A (ja) 2007-07-05
CN1970230A (zh) 2007-05-30
IL178946A (en) 2012-10-31

Similar Documents

Publication Publication Date Title
EP1785230B1 (en) Method for slurry cleaning of etch chambers
EP3450104A1 (en) Method and apparatus for fluid cavitation abrasive surface finishing
US5230185A (en) Blasting apparatus and method
US6288154B1 (en) Abrasive jet stream polishing
US5083402A (en) Blasting apparatus
KR102711711B1 (ko) 서스펜션 플라즈마 분무용 슬러리 및 분무 피막의 형성 방법
CN110181406B (zh) 一种抛光液超声喷洒雾化装置
US5421766A (en) Blast nozzle for preventing the accumulation of static electric charge during blast cleaning operations
KR20170119633A (ko) 노즐 및 워크 연마 장치
CN108214320A (zh) 基于非牛顿流体的磨料气射流加工表面织构的装置及方法
CN115709439A (zh) 一种增材制造槽道热管内壁的纳米多相射流复合抛光装置及方法
US20060223423A1 (en) High pressure abrasive-liquid jet
CN101823237A (zh) 微磨料气射流加工用螺旋芯控制流束的喷嘴装置
WO2000020108A1 (en) Method of producing fine particle dispersions
CN111633563A (zh) 抛光介质制备装置和方法、机械化学抛光设备和方法
US5431594A (en) Pressurization system for abrasive supply pot
CN116713913A (zh) 一种基于Laval喷管的多相射流微细加工方法及装置
WO2020123332A1 (en) Oxidizer free slurry for ruthenium cmp
JPH11197946A (ja) 砥粒流動電解研磨加工工法及びその加工装置
JP4433602B2 (ja) ブラスト処理方法
WO2011119069A1 (ru) Устройства и способ для аэрогидродинамической абразивной очистки поверхностей
KR100988175B1 (ko) 세라믹 코팅막 형성 장치
JP2002224961A (ja) アブレシブジェットの形成方法及びアブレシブジェット形成装置
JP2587895B2 (ja) 固液混相流用ノズル
JPH04341335A (ja) 固気２相混合噴射流生成方法及び固気２相混合噴射流噴射装置

Legal Events

Date Code Title Description
AS Assignment

Owner name: THE BOC GROUP, INC.,NEW JERSEY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DAVIS, IAN MARTIN;LAUBE, DAVID P.;REEL/FRAME:017110/0723

Effective date: 20060127

AS Assignment

Owner name: BOC EDWARDS, INC., MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:THE BOC GROUP, INC.;REEL/FRAME:019767/0251

Effective date: 20070330

Owner name: BOC EDWARDS, INC.,MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:THE BOC GROUP, INC.;REEL/FRAME:019767/0251

Effective date: 20070330

AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BOC EDWARDS, INC.;REEL/FRAME:020365/0966

Effective date: 20070828

Owner name: APPLIED MATERIALS, INC.,CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BOC EDWARDS, INC.;REEL/FRAME:020365/0966

Effective date: 20070828

AS Assignment

Owner name: FOX CHASE BANK, PENNSYLVANIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:QUANTUM GLOBAL TECHNOLOGIES, LLC;REEL/FRAME:026468/0130

Effective date: 20110609

AS Assignment

Owner name: QUANTUM GLOBAL TECHNOLOGIES LLC, PENNSYLVANIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:APPLIED MATERIALS, INC.;REEL/FRAME:026886/0171

Effective date: 20110512

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: QUANTUM GLOBAL TECHNOLOGIES, LLC, PENNSYLVANIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:UNIVEST BANK AND TRUST CO., SUCCESSOR BY MERGER TO FOX CHASE BANK;REEL/FRAME:046962/0614

Effective date: 20180827