CN1967719B - 电源电平升高的可编程逻辑器件存储器单元 - Google Patents

电源电平升高的可编程逻辑器件存储器单元 Download PDF

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Publication number
CN1967719B
CN1967719B CN200610148491XA CN200610148491A CN1967719B CN 1967719 B CN1967719 B CN 1967719B CN 200610148491X A CN200610148491X A CN 200610148491XA CN 200610148491 A CN200610148491 A CN 200610148491A CN 1967719 B CN1967719 B CN 1967719B
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China
Prior art keywords
memory cell
data
voltage
address
supply voltage
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Expired - Fee Related
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CN200610148491XA
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English (en)
Chinese (zh)
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CN1967719A (zh
Inventor
刘令时
陈天沐
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Altera Corp
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Altera Corp
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Publication of CN1967719A publication Critical patent/CN1967719A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17784—Structural details for adapting physical parameters for supply voltage

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  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
CN200610148491XA 2005-11-17 2006-11-17 电源电平升高的可编程逻辑器件存储器单元 Expired - Fee Related CN1967719B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US73786805P 2005-11-17 2005-11-17
US60/737,868 2005-11-17
US11/335,437 2006-01-18
US11/335,437 US7277351B2 (en) 2005-11-17 2006-01-18 Programmable logic device memory elements with elevated power supply levels

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201110183540.4A Division CN102290098B (zh) 2005-11-17 2006-11-17 电源电平升高的可编程逻辑器件存储器单元

Publications (2)

Publication Number Publication Date
CN1967719A CN1967719A (zh) 2007-05-23
CN1967719B true CN1967719B (zh) 2011-08-17

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CN200610148491XA Expired - Fee Related CN1967719B (zh) 2005-11-17 2006-11-17 电源电平升高的可编程逻辑器件存储器单元
CN201110183540.4A Expired - Fee Related CN102290098B (zh) 2005-11-17 2006-11-17 电源电平升高的可编程逻辑器件存储器单元

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CN201110183540.4A Expired - Fee Related CN102290098B (zh) 2005-11-17 2006-11-17 电源电平升高的可编程逻辑器件存储器单元

Country Status (4)

Country Link
US (1) US7277351B2 (enExample)
EP (2) EP1788706B1 (enExample)
JP (1) JP4425897B2 (enExample)
CN (2) CN1967719B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7430148B2 (en) * 2005-11-17 2008-09-30 Altera Corporation Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
US7411853B2 (en) * 2005-11-17 2008-08-12 Altera Corporation Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits
US7266028B1 (en) * 2006-02-16 2007-09-04 Altera Corporation Method and apparatus for bit mapping memories in programmable logic device integrated circuits during at-speed testing
US7859301B2 (en) * 2007-04-30 2010-12-28 Altera Corporation Power regulator circuitry for programmable logic device memory elements
US7911826B1 (en) 2008-03-27 2011-03-22 Altera Corporation Integrated circuits with clearable memory elements
US7957177B2 (en) * 2008-06-05 2011-06-07 Altera Corporation Static random-access memory with boosted voltages
US8355292B2 (en) 2008-10-01 2013-01-15 Altera Corporation Volatile memory elements with soft error upset immunity
US8081503B1 (en) 2009-02-27 2011-12-20 Altera Corporation Volatile memory elements with minimized area and leakage current
US7872903B2 (en) * 2009-03-19 2011-01-18 Altera Corporation Volatile memory elements with soft error upset immunity
US8072237B1 (en) * 2009-06-04 2011-12-06 Altera Corporation Computer-aided design tools and memory element power supply circuitry for selectively overdriving circuit blocks
US8411491B1 (en) 2011-01-03 2013-04-02 Altera Corporation Memory array with distributed clear transistors and variable memory element power supply
US8633731B1 (en) * 2011-08-09 2014-01-21 Altera Corporation Programmable integrated circuit with thin-oxide passgates
US8483006B1 (en) 2011-09-16 2013-07-09 Altera Corporation Programmable addressing circuitry for increasing memory yield
US8611137B2 (en) * 2011-11-23 2013-12-17 Altera Corporation Memory elements with relay devices
CN106298772A (zh) * 2012-05-02 2017-01-04 株式会社半导体能源研究所 可编程逻辑器件
KR102059218B1 (ko) 2012-05-25 2019-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
CN102969019B (zh) * 2012-12-04 2015-10-28 西安华芯半导体有限公司 一种增强静态随机存储器写操作的电路
US9444460B1 (en) 2013-11-22 2016-09-13 Altera Corporation Integrated circuits with programmable overdrive capabilities
US9419622B2 (en) * 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10121534B1 (en) 2015-12-18 2018-11-06 Altera Corporation Integrated circuit with overdriven and underdriven pass gates
KR102511901B1 (ko) * 2016-04-11 2023-03-20 에스케이하이닉스 주식회사 넓은 동작 영역을 갖는 불휘발성 메모리 소자
US10269426B2 (en) * 2017-06-15 2019-04-23 Intel Corporation Integrated circuits with complementary non-volatile resistive memory elements
CN119763631B (zh) * 2024-11-28 2026-04-28 中国电子科技集团公司第五十八研究所 一种适用于非易失存储单元的自加载存储结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920201A (en) * 1996-01-17 1999-07-06 Xilinx, Inc. Circuit for testing pumped voltage gates in a programmable gate array
US6114843A (en) * 1998-08-18 2000-09-05 Xilinx, Inc. Voltage down converter for multiple voltage levels
US6232893B1 (en) * 1998-05-27 2001-05-15 Altera Corporation Method and apparatus for programmably providing a power supply voltage to an integrated circuit

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Publication number Priority date Publication date Assignee Title
JPH0513714A (ja) * 1990-01-25 1993-01-22 Texas Instr Inc <Ti> 溝型トランジスタ使用の双安定論理デバイス
US20020130681A1 (en) * 1991-09-03 2002-09-19 Cliff Richard G. Programmable logic array integrated circuits
JPH08111094A (ja) * 1994-10-12 1996-04-30 Nec Corp スタチック型半導体記憶装置
US6118302A (en) * 1996-05-28 2000-09-12 Altera Corporation Interface for low-voltage semiconductor devices
US6025737A (en) * 1996-11-27 2000-02-15 Altera Corporation Circuitry for a low internal voltage integrated circuit
US5801551A (en) * 1996-08-01 1998-09-01 Advanced Micro Devices, Inc. Depletion mode pass gates with controlling decoder and negative power supply for a programmable logic device
US6018476A (en) * 1996-09-16 2000-01-25 Altera Corporation Nonvolatile configuration cells and cell arrays
US6108266A (en) * 1999-10-28 2000-08-22 Motorola, Inc. Memory utilizing a programmable delay to control address buffers
GB0103837D0 (en) * 2001-02-16 2001-04-04 Nallatech Ltd Programmable power supply for field programmable gate array modules
JP2002368135A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
US7430148B2 (en) * 2005-11-17 2008-09-30 Altera Corporation Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
US7411853B2 (en) * 2005-11-17 2008-08-12 Altera Corporation Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920201A (en) * 1996-01-17 1999-07-06 Xilinx, Inc. Circuit for testing pumped voltage gates in a programmable gate array
US6232893B1 (en) * 1998-05-27 2001-05-15 Altera Corporation Method and apparatus for programmably providing a power supply voltage to an integrated circuit
US6114843A (en) * 1998-08-18 2000-09-05 Xilinx, Inc. Voltage down converter for multiple voltage levels

Also Published As

Publication number Publication date
EP1788706B1 (en) 2014-07-30
JP2007143151A (ja) 2007-06-07
JP4425897B2 (ja) 2010-03-03
EP2464011A2 (en) 2012-06-13
CN102290098B (zh) 2015-02-11
CN1967719A (zh) 2007-05-23
US7277351B2 (en) 2007-10-02
EP1788706A1 (en) 2007-05-23
EP2464011B1 (en) 2019-08-21
CN102290098A (zh) 2011-12-21
US20070109899A1 (en) 2007-05-17
EP2464011A3 (en) 2014-02-26

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Granted publication date: 20110817

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