JP4425897B2 - 高電源レベルを有するプログラマブルロジックデバイスメモリ要素 - Google Patents
高電源レベルを有するプログラマブルロジックデバイスメモリ要素 Download PDFInfo
- Publication number
- JP4425897B2 JP4425897B2 JP2006307333A JP2006307333A JP4425897B2 JP 4425897 B2 JP4425897 B2 JP 4425897B2 JP 2006307333 A JP2006307333 A JP 2006307333A JP 2006307333 A JP2006307333 A JP 2006307333A JP 4425897 B2 JP4425897 B2 JP 4425897B2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- programmable
- memory element
- supply voltage
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17748—Structural details of configuration resources
- H03K19/1776—Structural details of configuration resources for memories
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/1778—Structural details for adapting physical parameters
- H03K19/17784—Structural details for adapting physical parameters for supply voltage
Landscapes
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73786805P | 2005-11-17 | 2005-11-17 | |
| US11/335,437 US7277351B2 (en) | 2005-11-17 | 2006-01-18 | Programmable logic device memory elements with elevated power supply levels |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007143151A JP2007143151A (ja) | 2007-06-07 |
| JP2007143151A5 JP2007143151A5 (enExample) | 2009-12-17 |
| JP4425897B2 true JP4425897B2 (ja) | 2010-03-03 |
Family
ID=37745961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006307333A Expired - Fee Related JP4425897B2 (ja) | 2005-11-17 | 2006-11-14 | 高電源レベルを有するプログラマブルロジックデバイスメモリ要素 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7277351B2 (enExample) |
| EP (2) | EP1788706B1 (enExample) |
| JP (1) | JP4425897B2 (enExample) |
| CN (2) | CN102290098B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7430148B2 (en) * | 2005-11-17 | 2008-09-30 | Altera Corporation | Volatile memory elements with boosted output voltages for programmable logic device integrated circuits |
| US7411853B2 (en) * | 2005-11-17 | 2008-08-12 | Altera Corporation | Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits |
| US7266028B1 (en) * | 2006-02-16 | 2007-09-04 | Altera Corporation | Method and apparatus for bit mapping memories in programmable logic device integrated circuits during at-speed testing |
| US7859301B2 (en) * | 2007-04-30 | 2010-12-28 | Altera Corporation | Power regulator circuitry for programmable logic device memory elements |
| US7911826B1 (en) | 2008-03-27 | 2011-03-22 | Altera Corporation | Integrated circuits with clearable memory elements |
| US7957177B2 (en) * | 2008-06-05 | 2011-06-07 | Altera Corporation | Static random-access memory with boosted voltages |
| CN103778946B (zh) | 2008-10-01 | 2017-01-04 | 阿尔特拉公司 | 具有软错误翻转抗扰性的易失性存储器元件 |
| US8081503B1 (en) | 2009-02-27 | 2011-12-20 | Altera Corporation | Volatile memory elements with minimized area and leakage current |
| US7872903B2 (en) * | 2009-03-19 | 2011-01-18 | Altera Corporation | Volatile memory elements with soft error upset immunity |
| US8072237B1 (en) * | 2009-06-04 | 2011-12-06 | Altera Corporation | Computer-aided design tools and memory element power supply circuitry for selectively overdriving circuit blocks |
| US8411491B1 (en) | 2011-01-03 | 2013-04-02 | Altera Corporation | Memory array with distributed clear transistors and variable memory element power supply |
| US8633731B1 (en) * | 2011-08-09 | 2014-01-21 | Altera Corporation | Programmable integrated circuit with thin-oxide passgates |
| US8483006B1 (en) | 2011-09-16 | 2013-07-09 | Altera Corporation | Programmable addressing circuitry for increasing memory yield |
| US8611137B2 (en) * | 2011-11-23 | 2013-12-17 | Altera Corporation | Memory elements with relay devices |
| KR101978932B1 (ko) * | 2012-05-02 | 2019-05-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 프로그램 가능한 로직 디바이스 |
| CN104321967B (zh) | 2012-05-25 | 2018-01-09 | 株式会社半导体能源研究所 | 可编程逻辑装置及半导体装置 |
| CN102969019B (zh) * | 2012-12-04 | 2015-10-28 | 西安华芯半导体有限公司 | 一种增强静态随机存储器写操作的电路 |
| US9444460B1 (en) | 2013-11-22 | 2016-09-13 | Altera Corporation | Integrated circuits with programmable overdrive capabilities |
| US9419622B2 (en) * | 2014-03-07 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10121534B1 (en) | 2015-12-18 | 2018-11-06 | Altera Corporation | Integrated circuit with overdriven and underdriven pass gates |
| KR102511901B1 (ko) * | 2016-04-11 | 2023-03-20 | 에스케이하이닉스 주식회사 | 넓은 동작 영역을 갖는 불휘발성 메모리 소자 |
| US10269426B2 (en) * | 2017-06-15 | 2019-04-23 | Intel Corporation | Integrated circuits with complementary non-volatile resistive memory elements |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513714A (ja) * | 1990-01-25 | 1993-01-22 | Texas Instr Inc <Ti> | 溝型トランジスタ使用の双安定論理デバイス |
| US20020130681A1 (en) * | 1991-09-03 | 2002-09-19 | Cliff Richard G. | Programmable logic array integrated circuits |
| JPH08111094A (ja) * | 1994-10-12 | 1996-04-30 | Nec Corp | スタチック型半導体記憶装置 |
| US5717340A (en) * | 1996-01-17 | 1998-02-10 | Xilink, Inc. | Circuit for testing pumped voltage gates in a programmable gate array |
| US6118302A (en) * | 1996-05-28 | 2000-09-12 | Altera Corporation | Interface for low-voltage semiconductor devices |
| US6025737A (en) * | 1996-11-27 | 2000-02-15 | Altera Corporation | Circuitry for a low internal voltage integrated circuit |
| US5801551A (en) * | 1996-08-01 | 1998-09-01 | Advanced Micro Devices, Inc. | Depletion mode pass gates with controlling decoder and negative power supply for a programmable logic device |
| US6018476A (en) * | 1996-09-16 | 2000-01-25 | Altera Corporation | Nonvolatile configuration cells and cell arrays |
| US6232893B1 (en) * | 1998-05-27 | 2001-05-15 | Altera Corporation | Method and apparatus for programmably providing a power supply voltage to an integrated circuit |
| US6114843A (en) * | 1998-08-18 | 2000-09-05 | Xilinx, Inc. | Voltage down converter for multiple voltage levels |
| US6108266A (en) * | 1999-10-28 | 2000-08-22 | Motorola, Inc. | Memory utilizing a programmable delay to control address buffers |
| GB0103837D0 (en) * | 2001-02-16 | 2001-04-04 | Nallatech Ltd | Programmable power supply for field programmable gate array modules |
| JP2002368135A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 半導体記憶装置 |
| US7430148B2 (en) * | 2005-11-17 | 2008-09-30 | Altera Corporation | Volatile memory elements with boosted output voltages for programmable logic device integrated circuits |
| US7411853B2 (en) * | 2005-11-17 | 2008-08-12 | Altera Corporation | Volatile memory elements with elevated power supply levels for programmable logic device integrated circuits |
-
2006
- 2006-01-18 US US11/335,437 patent/US7277351B2/en not_active Expired - Fee Related
- 2006-11-14 JP JP2006307333A patent/JP4425897B2/ja not_active Expired - Fee Related
- 2006-11-16 EP EP06255868.9A patent/EP1788706B1/en not_active Ceased
- 2006-11-16 EP EP12158267.0A patent/EP2464011B1/en not_active Ceased
- 2006-11-17 CN CN201110183540.4A patent/CN102290098B/zh not_active Expired - Fee Related
- 2006-11-17 CN CN200610148491XA patent/CN1967719B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2464011A3 (en) | 2014-02-26 |
| EP2464011B1 (en) | 2019-08-21 |
| CN102290098B (zh) | 2015-02-11 |
| US7277351B2 (en) | 2007-10-02 |
| CN1967719A (zh) | 2007-05-23 |
| EP1788706B1 (en) | 2014-07-30 |
| CN102290098A (zh) | 2011-12-21 |
| EP1788706A1 (en) | 2007-05-23 |
| EP2464011A2 (en) | 2012-06-13 |
| CN1967719B (zh) | 2011-08-17 |
| US20070109899A1 (en) | 2007-05-17 |
| JP2007143151A (ja) | 2007-06-07 |
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