CN1947003B - 荧光x射线分析方法及荧光x射线分析装置 - Google Patents
荧光x射线分析方法及荧光x射线分析装置 Download PDFInfo
- Publication number
- CN1947003B CN1947003B CN200580013286.6A CN200580013286A CN1947003B CN 1947003 B CN1947003 B CN 1947003B CN 200580013286 A CN200580013286 A CN 200580013286A CN 1947003 B CN1947003 B CN 1947003B
- Authority
- CN
- China
- Prior art keywords
- fluorescent
- value
- measurement
- concentration
- precision
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP133135/2004 | 2004-04-28 | ||
JP2004133135 | 2004-04-28 | ||
JP2004318844 | 2004-11-02 | ||
JP318844/2004 | 2004-11-02 | ||
PCT/JP2005/007977 WO2005106440A1 (ja) | 2004-04-28 | 2005-04-27 | 蛍光x線分析方法および蛍光x線分析装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1947003A CN1947003A (zh) | 2007-04-11 |
CN1947003B true CN1947003B (zh) | 2010-12-29 |
Family
ID=35241783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200580013286.6A Expired - Lifetime CN1947003B (zh) | 2004-04-28 | 2005-04-27 | 荧光x射线分析方法及荧光x射线分析装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7382855B2 (zh) |
EP (1) | EP1757925B1 (zh) |
JP (1) | JP4928938B2 (zh) |
CN (1) | CN1947003B (zh) |
WO (1) | WO2005106440A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8223917B2 (en) * | 2005-09-01 | 2012-07-17 | Kabushiki Kaisha Toshiba | Method of quantitative analysis of hexavalent chromium in chromate coating and method for controlling hazardous element in encapsulating resin of resin encapsulation semiconductor device |
JP5069078B2 (ja) * | 2007-10-16 | 2012-11-07 | 日本電子株式会社 | X線スペクトルを用いる分析方法 |
CN101776622B (zh) * | 2009-12-29 | 2012-06-13 | 聚光科技(杭州)股份有限公司 | 一种土壤测量方法 |
GB2502307A (en) * | 2012-05-22 | 2013-11-27 | Kromek Ltd | Radiation Detection |
JP2014035334A (ja) * | 2012-08-10 | 2014-02-24 | Hitachi High-Tech Science Corp | 蛍光x線分析方法及び蛍光x線分析装置 |
JP6438865B2 (ja) * | 2015-09-01 | 2018-12-19 | 株式会社堀場製作所 | 蛍光x線分析装置、蛍光x線分析方法及びコンピュータプログラム |
JP7111719B2 (ja) * | 2017-08-07 | 2022-08-02 | 上村工業株式会社 | 蛍光x線分析の測定方法及び蛍光x線分析の測定装置 |
JP6732347B1 (ja) * | 2019-03-29 | 2020-07-29 | 株式会社リガク | 蛍光x線分析装置 |
US11609192B2 (en) * | 2019-12-19 | 2023-03-21 | Rigaku Corporation | Energy dispersive x-ray fluorescent spectrometer, evaluation method, and evaluation program |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428656A (en) * | 1992-10-11 | 1995-06-27 | Horiba, Ltd. | Apparatus and method for fluorescent x-ray analysis of light and heavy elements |
US5570406A (en) * | 1994-07-30 | 1996-10-29 | Horiba, Ltd. | X-ray analyzer system and method of increasing response time |
CN1328639A (zh) * | 1998-09-17 | 2001-12-26 | 程序控制公司 | X-射线荧光元素分析器 |
CN2491832Y (zh) * | 2001-02-27 | 2002-05-15 | 成都理工学院 | 便携式管激发x射线荧光仪 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19739321C2 (de) * | 1997-09-09 | 2001-09-27 | Helmut Fischer Gmbh & Co | Verfahren und Einrichtung zum Bestimmen der Meßunsicherheit bei Röntgenfluoreszenz-Schichtdickenmessungen |
JP2001099795A (ja) | 1999-09-30 | 2001-04-13 | Shimadzu Corp | 元素マッピング装置 |
DE10051330C2 (de) | 2000-10-09 | 2002-09-19 | Rados Technology Gmbh | Verfahren zur Verkürzung der statistischen Messzeiten im Bereich der Radioaktivitätsmessung |
-
2005
- 2005-04-27 WO PCT/JP2005/007977 patent/WO2005106440A1/ja active Application Filing
- 2005-04-27 US US11/587,856 patent/US7382855B2/en not_active Expired - Lifetime
- 2005-04-27 JP JP2006512798A patent/JP4928938B2/ja not_active Expired - Lifetime
- 2005-04-27 CN CN200580013286.6A patent/CN1947003B/zh not_active Expired - Lifetime
- 2005-04-27 EP EP05737192.4A patent/EP1757925B1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428656A (en) * | 1992-10-11 | 1995-06-27 | Horiba, Ltd. | Apparatus and method for fluorescent x-ray analysis of light and heavy elements |
US5570406A (en) * | 1994-07-30 | 1996-10-29 | Horiba, Ltd. | X-ray analyzer system and method of increasing response time |
CN1328639A (zh) * | 1998-09-17 | 2001-12-26 | 程序控制公司 | X-射线荧光元素分析器 |
CN2491832Y (zh) * | 2001-02-27 | 2002-05-15 | 成都理工学院 | 便携式管激发x射线荧光仪 |
Also Published As
Publication number | Publication date |
---|---|
EP1757925B1 (en) | 2014-05-07 |
EP1757925A1 (en) | 2007-02-28 |
US7382855B2 (en) | 2008-06-03 |
CN1947003A (zh) | 2007-04-11 |
JP4928938B2 (ja) | 2012-05-09 |
EP1757925A4 (en) | 2007-12-19 |
JPWO2005106440A1 (ja) | 2007-12-13 |
US20070248211A1 (en) | 2007-10-25 |
WO2005106440A1 (ja) | 2005-11-10 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEIKO NANO-ELECTRONIC TECHNOLOGY CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Gu Meixing Inventor after: Iwamoto Hiroshi Inventor after: Hisazumi Takao Inventor after: Iwata Yoshihiro Inventor after: Sakaguchi Yuemei Inventor after: Kiyoshi Hasegawa Inventor before: Gu Meixing Inventor before: Iwamoto Hiroshi Inventor before: Hisazumi Takao Inventor before: Iwata Yoshihiro Inventor before: Sakaguchi Yuemei |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: GU MEIXING HIROSHI IWAMOTO HISASHI TSUNOTAKAO SUSUYUTAKA IWATA SAKAGUCHI YOROKOBI TO: GU MEIXING HIROSHI IWAMOTO HISASHI TSUNOTAKAO SUSUYUTAKA IWATA SAKAGUCHI YOROKOBI KIYOSHI HASEGAWA |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100416 Address after: Osaka Japan Applicant after: Matsushita Electric Industrial Co.,Ltd. Co-applicant after: SII NanoTechnology Inc. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Osaka Japan Patentee after: Matsushita Electric Industrial Co.,Ltd. Patentee after: HITACHI HIGH-TECH SCIENCE Corp. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. Patentee before: SII NanoTechnology Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Osaka, Japan Patentee after: Panasonic Holding Co.,Ltd. Patentee after: HITACHI HIGH-TECH SCIENCE Corp. Address before: Osaka, Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. Patentee before: HITACHI HIGH-TECH SCIENCE Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230412 Address after: Tokyo, Japan Patentee after: HITACHI HIGH-TECH SCIENCE Corp. Address before: Osaka, Japan Patentee before: Panasonic Holding Co.,Ltd. Patentee before: HITACHI HIGH-TECH SCIENCE Corp. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20101229 |