CN1943008A - 用于温度控制的方法和装置 - Google Patents

用于温度控制的方法和装置 Download PDF

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Publication number
CN1943008A
CN1943008A CNA2005800110015A CN200580011001A CN1943008A CN 1943008 A CN1943008 A CN 1943008A CN A2005800110015 A CNA2005800110015 A CN A2005800110015A CN 200580011001 A CN200580011001 A CN 200580011001A CN 1943008 A CN1943008 A CN 1943008A
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China
Prior art keywords
heat transfer
fluid
temperature
transfer fluid
thermal
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Pending
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CNA2005800110015A
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English (en)
Chinese (zh)
Inventor
保罗·莫卢兹
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1943008A publication Critical patent/CN1943008A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNA2005800110015A 2004-04-15 2005-02-17 用于温度控制的方法和装置 Pending CN1943008A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/824,643 US20050229854A1 (en) 2004-04-15 2004-04-15 Method and apparatus for temperature change and control
US10/824,643 2004-04-15

Publications (1)

Publication Number Publication Date
CN1943008A true CN1943008A (zh) 2007-04-04

Family

ID=34960955

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800110015A Pending CN1943008A (zh) 2004-04-15 2005-02-17 用于温度控制的方法和装置

Country Status (5)

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US (2) US20050229854A1 (enExample)
JP (1) JP4772779B2 (enExample)
KR (1) KR101135746B1 (enExample)
CN (1) CN1943008A (enExample)
WO (1) WO2005106928A1 (enExample)

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US8623173B2 (en) 2007-09-14 2014-01-07 Advanced Display Process Engineering Co., Ltd. Substrate processing apparatus having electrode member
CN103538039A (zh) * 2013-10-09 2014-01-29 郭进标 一种工作台
CN103791550A (zh) * 2012-10-30 2014-05-14 海门黄海创业园服务有限公司 一种工作台加热系统
CN106637132A (zh) * 2015-10-29 2017-05-10 沈阳拓荆科技有限公司 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN107851559A (zh) * 2015-06-26 2018-03-27 东京毅力科创株式会社 气相蚀刻系统和方法
CN109196140A (zh) * 2016-05-05 2019-01-11 应用材料公司 双回路基座温度控制系统
CN110098135A (zh) * 2018-01-30 2019-08-06 台湾积体电路制造股份有限公司 温度控制装置及用于形成光刻胶层的方法
CN110094582A (zh) * 2018-01-29 2019-08-06 东京毅力科创株式会社 柔性配管和温度控制系统
CN111235547A (zh) * 2020-04-27 2020-06-05 上海陛通半导体能源科技股份有限公司 化学气相沉积方法
CN112614768A (zh) * 2019-10-04 2021-04-06 东京毅力科创株式会社 基板支承台和等离子体处理装置
CN116798920A (zh) * 2023-08-16 2023-09-22 北京北方华创微电子装备有限公司 温度控制装置、方法及半导体工艺设备

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US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
JP4533732B2 (ja) * 2004-11-30 2010-09-01 三菱重工業株式会社 製膜装置及びその製造方法
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070283709A1 (en) * 2006-06-09 2007-12-13 Veeco Instruments Inc. Apparatus and methods for managing the temperature of a substrate in a high vacuum processing system
KR100757851B1 (ko) * 2006-07-04 2007-09-11 세메스 주식회사 웨이퍼 이송용 로봇암 및 이를 구비하는 웨이퍼 이송 장치
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
ATE514183T1 (de) * 2006-11-17 2011-07-15 Centrotherm Thermal Solutions Gmbh & Co Kg Verfahren und anordnung zum thermischen behandeln von substraten
KR20090001091A (ko) * 2007-06-29 2009-01-08 (주)티티에스 외부발열부재가 구성된 반도체 제조장치
KR101055749B1 (ko) 2008-11-17 2011-08-11 주식회사 하이닉스반도체 수직게이트를 구비한 반도체장치 제조 방법
DE102009018434B4 (de) * 2009-04-22 2023-11-30 Ev Group Gmbh Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
CN102652352B (zh) * 2009-12-15 2015-12-02 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
US9629280B2 (en) * 2010-06-24 2017-04-18 Raytheon Company Multiple liquid loop cooling for electronics
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
JP5709505B2 (ja) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
KR102411194B1 (ko) * 2014-09-04 2022-06-20 삼성전자주식회사 냉매의 양방향 흐름이 가능한 정전척 어셈블리 및 이를 구비한 반도체 제조장치
JP2019201086A (ja) * 2018-05-15 2019-11-21 東京エレクトロン株式会社 処理装置、部材及び温度制御方法
WO2020023409A1 (en) * 2018-07-24 2020-01-30 Applied Materials, Inc. Optically transparent pedestal for fluidly supporting a substrate
JP7550104B2 (ja) * 2021-04-23 2024-09-12 東京エレクトロン株式会社 基板搬送装置及びアームの冷却方法
CN115110119B (zh) * 2022-06-20 2024-03-29 阳光氢能科技有限公司 制氢系统的温度控制方法及装置、制氢系统
TWI846254B (zh) * 2022-12-30 2024-06-21 中國砂輪企業股份有限公司 溫度控制裝置及方法
US20250065462A1 (en) * 2023-08-21 2025-02-27 Applied Materials, Inc. Temperature control system with flammable heat transfer fluid
US20250349575A1 (en) * 2024-05-09 2025-11-13 Applied Materials, Inc. Semiconductor processing chamber thermal control

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FR2631010B1 (fr) * 1988-05-06 1991-03-22 Sagem Dispositif de support et de regulation thermique d'une piece et appareillage de test de plaques de circuits semi-conducteurs incluant un tel dispositif
JPH07271452A (ja) * 1994-03-25 1995-10-20 Dainippon Screen Mfg Co Ltd 基板の温度調節用プレート装置
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JPH09172001A (ja) * 1995-12-15 1997-06-30 Sony Corp 半導体製造装置の温度制御方法および装置
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WO2003012567A1 (en) * 2001-07-30 2003-02-13 Tokyo Electron Limited Plasma chamber wall segment temperature control
KR100389872B1 (ko) * 2001-11-12 2003-07-04 삼성전자주식회사 전자사진 형성장치의 정착롤러를 위한 전력 제어 방법 및장치
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6822202B2 (en) * 2002-03-15 2004-11-23 Oriol, Inc. Semiconductor processing temperature control
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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8623173B2 (en) 2007-09-14 2014-01-07 Advanced Display Process Engineering Co., Ltd. Substrate processing apparatus having electrode member
CN103791550A (zh) * 2012-10-30 2014-05-14 海门黄海创业园服务有限公司 一种工作台加热系统
CN103791550B (zh) * 2012-10-30 2016-08-03 海门黄海创业园服务有限公司 一种工作台加热系统
CN103538039A (zh) * 2013-10-09 2014-01-29 郭进标 一种工作台
CN107851559A (zh) * 2015-06-26 2018-03-27 东京毅力科创株式会社 气相蚀刻系统和方法
CN107851559B (zh) * 2015-06-26 2022-04-26 东京毅力科创株式会社 气相蚀刻系统和方法
CN106637132B (zh) * 2015-10-29 2020-01-10 沈阳拓荆科技有限公司 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN106637132A (zh) * 2015-10-29 2017-05-10 沈阳拓荆科技有限公司 循环媒介自动控温、热传导气体传导温度的晶圆反应台
CN109196140A (zh) * 2016-05-05 2019-01-11 应用材料公司 双回路基座温度控制系统
CN109196140B (zh) * 2016-05-05 2019-10-25 应用材料公司 双回路基座温度控制系统
CN110094582A (zh) * 2018-01-29 2019-08-06 东京毅力科创株式会社 柔性配管和温度控制系统
US11566728B2 (en) 2018-01-29 2023-01-31 Tokyo Electron Limited Flexible pipe and temperature control system
CN110098135A (zh) * 2018-01-30 2019-08-06 台湾积体电路制造股份有限公司 温度控制装置及用于形成光刻胶层的方法
CN110098135B (zh) * 2018-01-30 2022-11-15 台湾积体电路制造股份有限公司 温度控制装置及用于形成光刻胶层的方法
CN112614768A (zh) * 2019-10-04 2021-04-06 东京毅力科创株式会社 基板支承台和等离子体处理装置
CN111235547A (zh) * 2020-04-27 2020-06-05 上海陛通半导体能源科技股份有限公司 化学气相沉积方法
CN116798920A (zh) * 2023-08-16 2023-09-22 北京北方华创微电子装备有限公司 温度控制装置、方法及半导体工艺设备
CN116798920B (zh) * 2023-08-16 2024-05-17 北京北方华创微电子装备有限公司 温度控制装置、方法及半导体工艺设备

Also Published As

Publication number Publication date
WO2005106928A1 (en) 2005-11-10
US20090095451A1 (en) 2009-04-16
KR20070003823A (ko) 2007-01-05
US20050229854A1 (en) 2005-10-20
JP2007533155A (ja) 2007-11-15
JP4772779B2 (ja) 2011-09-14
KR101135746B1 (ko) 2012-04-16

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