CN1941180B - 半导体存储装置及其驱动方法 - Google Patents

半导体存储装置及其驱动方法 Download PDF

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Publication number
CN1941180B
CN1941180B CN2006101412057A CN200610141205A CN1941180B CN 1941180 B CN1941180 B CN 1941180B CN 2006101412057 A CN2006101412057 A CN 2006101412057A CN 200610141205 A CN200610141205 A CN 200610141205A CN 1941180 B CN1941180 B CN 1941180B
Authority
CN
China
Prior art keywords
signal
semiconductor storage
internal logic
internal
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006101412057A
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English (en)
Chinese (zh)
Other versions
CN1941180A (zh
Inventor
郑镇一
都昌镐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of CN1941180A publication Critical patent/CN1941180A/zh
Application granted granted Critical
Publication of CN1941180B publication Critical patent/CN1941180B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN2006101412057A 2005-09-28 2006-09-28 半导体存储装置及其驱动方法 Expired - Fee Related CN1941180B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR90840/05 2005-09-28
KR20050090840 2005-09-28
KR1020050134009A KR100670697B1 (ko) 2005-09-28 2005-12-29 반도체 메모리 소자 및 그 구동방법
KR134009/05 2005-12-29

Publications (2)

Publication Number Publication Date
CN1941180A CN1941180A (zh) 2007-04-04
CN1941180B true CN1941180B (zh) 2010-09-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101412057A Expired - Fee Related CN1941180B (zh) 2005-09-28 2006-09-28 半导体存储装置及其驱动方法

Country Status (3)

Country Link
KR (1) KR100670697B1 (ko)
CN (1) CN1941180B (ko)
TW (1) TWI332213B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100842759B1 (ko) 2007-01-03 2008-07-01 주식회사 하이닉스반도체 반도체메모리소자 및 그의 구동 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6408415B1 (en) * 1998-05-13 2002-06-18 Hyundai Electronics Industries Co., Ltd. Test mode setup circuit for microcontroller unit
US6833741B2 (en) * 2002-07-09 2004-12-21 Hynix Semiconductor Inc. Circuit for controlling an initializing circuit in a semiconductor device
CN1577624A (zh) * 2003-07-29 2005-02-09 海力士半导体有限公司 能够降低有效模式下电流消耗的半导体存储装置
CN1585033A (zh) * 2003-08-22 2005-02-23 海力士半导体有限公司 驱动非挥发性动态随机存取存储器的装置以及方法
US6903568B2 (en) * 2003-02-17 2005-06-07 Samsung Electronics Co., Ltd. Circuit for reducing leakage current in a processor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6408415B1 (en) * 1998-05-13 2002-06-18 Hyundai Electronics Industries Co., Ltd. Test mode setup circuit for microcontroller unit
US6833741B2 (en) * 2002-07-09 2004-12-21 Hynix Semiconductor Inc. Circuit for controlling an initializing circuit in a semiconductor device
US6903568B2 (en) * 2003-02-17 2005-06-07 Samsung Electronics Co., Ltd. Circuit for reducing leakage current in a processor
CN1577624A (zh) * 2003-07-29 2005-02-09 海力士半导体有限公司 能够降低有效模式下电流消耗的半导体存储装置
CN1585033A (zh) * 2003-08-22 2005-02-23 海力士半导体有限公司 驱动非挥发性动态随机存取存储器的装置以及方法

Also Published As

Publication number Publication date
CN1941180A (zh) 2007-04-04
TW200725621A (en) 2007-07-01
TWI332213B (en) 2010-10-21
KR100670697B1 (ko) 2007-01-17

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
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Granted publication date: 20100929

Termination date: 20160928