CN1939994A - 抛光组合物和抛光方法 - Google Patents
抛光组合物和抛光方法 Download PDFInfo
- Publication number
- CN1939994A CN1939994A CNA2006101421605A CN200610142160A CN1939994A CN 1939994 A CN1939994 A CN 1939994A CN A2006101421605 A CNA2006101421605 A CN A2006101421605A CN 200610142160 A CN200610142160 A CN 200610142160A CN 1939994 A CN1939994 A CN 1939994A
- Authority
- CN
- China
- Prior art keywords
- acid
- polishing composition
- polishing
- magnetic disk
- disk substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 232
- 239000000203 mixture Substances 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title description 5
- 239000002253 acid Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 73
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 48
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 42
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 239000006061 abrasive grain Substances 0.000 claims abstract description 33
- 239000012964 benzotriazole Substances 0.000 claims abstract description 32
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 235000011007 phosphoric acid Nutrition 0.000 claims abstract description 21
- 239000008119 colloidal silica Substances 0.000 claims abstract description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000003233 pyrroles Chemical class 0.000 claims description 23
- 150000003008 phosphonic acid esters Chemical class 0.000 claims description 16
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 13
- 239000001103 potassium chloride Substances 0.000 claims description 13
- 235000011164 potassium chloride Nutrition 0.000 claims description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 12
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 12
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 11
- -1 phospho Chemical class 0.000 claims description 11
- 150000003863 ammonium salts Chemical class 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 7
- 235000010755 mineral Nutrition 0.000 claims description 7
- 239000011707 mineral Substances 0.000 claims description 7
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 claims description 6
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 229960001866 silicon dioxide Drugs 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 4
- 150000003016 phosphoric acids Chemical class 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- JJJOZVFVARQUJV-UHFFFAOYSA-N 2-ethylhexylphosphonic acid Chemical compound CCCCC(CC)CP(O)(O)=O JJJOZVFVARQUJV-UHFFFAOYSA-N 0.000 claims description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 3
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical compound CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- IMQLKJBTEOYOSI-GPIVLXJGSA-N Inositol-hexakisphosphate Chemical compound OP(O)(=O)O[C@H]1[C@H](OP(O)(O)=O)[C@@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@@H]1OP(O)(O)=O IMQLKJBTEOYOSI-GPIVLXJGSA-N 0.000 claims description 3
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 3
- IMQLKJBTEOYOSI-UHFFFAOYSA-N Phytic acid Natural products OP(O)(=O)OC1C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C1OP(O)(O)=O IMQLKJBTEOYOSI-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- 229950006191 gluconic acid Drugs 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 229960000448 lactic acid Drugs 0.000 claims description 3
- 150000002632 lipids Chemical class 0.000 claims description 3
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims description 3
- 229960002510 mandelic acid Drugs 0.000 claims description 3
- 239000011664 nicotinic acid Substances 0.000 claims description 3
- 229960003512 nicotinic acid Drugs 0.000 claims description 3
- 235000001968 nicotinic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000467 phytic acid Substances 0.000 claims description 3
- 235000002949 phytic acid Nutrition 0.000 claims description 3
- 229940068041 phytic acid Drugs 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 150000003014 phosphoric acid esters Chemical class 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 101710171243 Peroxidase 10 Proteins 0.000 description 39
- 239000001257 hydrogen Substances 0.000 description 39
- 229910052739 hydrogen Inorganic materials 0.000 description 39
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 38
- 229910052700 potassium Inorganic materials 0.000 description 21
- 230000000694 effects Effects 0.000 description 9
- 159000000000 sodium salts Chemical group 0.000 description 8
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 7
- 230000014509 gene expression Effects 0.000 description 7
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 206010011224 Cough Diseases 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001508 potassium citrate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000015870 tripotassium citrate Nutrition 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical group C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- ZEKANFGSDXODPD-UHFFFAOYSA-N glyphosate-isopropylammonium Chemical compound CC(C)N.OC(=O)CNCP(O)(O)=O ZEKANFGSDXODPD-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- FBMUYWXYWIZLNE-UHFFFAOYSA-N nickel phosphide Chemical compound [Ni]=P#[Ni] FBMUYWXYWIZLNE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Chemical group 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/238,256 | 2005-09-29 | ||
| US11/238,256 US20070068902A1 (en) | 2005-09-29 | 2005-09-29 | Polishing composition and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1939994A true CN1939994A (zh) | 2007-04-04 |
Family
ID=37434808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101421605A Pending CN1939994A (zh) | 2005-09-29 | 2006-09-28 | 抛光组合物和抛光方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20070068902A1 (enExample) |
| JP (3) | JP5025204B2 (enExample) |
| CN (1) | CN1939994A (enExample) |
| GB (1) | GB2430680A (enExample) |
| MY (1) | MY150651A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101463292B (zh) * | 2008-11-28 | 2011-11-02 | 江苏海迅实业集团股份有限公司 | 一种车船玻璃表面处理剂 |
| CN103160207A (zh) * | 2011-12-16 | 2013-06-19 | 安集微电子（上海）有限公司 | 一种金属化学机械抛光浆料及其应用 |
| CN106916536A (zh) * | 2015-12-25 | 2017-07-04 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2322322B2 (en) * | 2008-06-13 | 2022-10-05 | Fujimi Incorporated | Aluminum oxide particle and polishing composition containing the same |
| JP5473544B2 (ja) * | 2008-11-06 | 2014-04-16 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| US20110203186A1 (en) * | 2008-11-06 | 2011-08-25 | Yoshiaki Oshima | Polishing liquid composition for magnetic disk substrate |
| TWI454561B (zh) * | 2008-12-30 | 2014-10-01 | Uwiz Technology Co Ltd | A polishing composition for planarizing the metal layer |
| JP5473587B2 (ja) * | 2009-12-24 | 2014-04-16 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| JP5657247B2 (ja) * | 2009-12-25 | 2015-01-21 | 花王株式会社 | 研磨液組成物 |
| JP6101444B2 (ja) * | 2012-08-01 | 2017-03-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法 |
| JP6015259B2 (ja) * | 2012-09-06 | 2016-10-26 | 旭硝子株式会社 | 情報記録媒体用ガラス基板の製造方法および磁気ディスクの製造方法 |
| JP6110716B2 (ja) * | 2013-04-11 | 2017-04-05 | 山口精研工業株式会社 | Ｎｉ−Ｐメッキされたアルミ磁気ディスク基板仕上げ研磨用研磨剤組成物、Ｎｉ−Ｐメッキされたアルミ磁気ディスク基板の研磨方法、Ｎｉ−Ｐメッキされたアルミ磁気ディスク基板の製造方法、及びＮｉ−Ｐメッキされたアルミ磁気ディスク基板 |
| JP2014101518A (ja) * | 2014-01-06 | 2014-06-05 | Fujimi Inc | 研磨用組成物、研磨方法、及び研磨パッドの弾力性低下抑制方法 |
| JP6415967B2 (ja) * | 2014-12-22 | 2018-10-31 | 花王株式会社 | 研磨液組成物 |
| US20190077991A1 (en) * | 2015-10-09 | 2019-03-14 | Fujimi Incorporated | Polishing composition and polishing method using same, and method for producing polishing-completed object to be polished using same |
| JP6775453B2 (ja) * | 2017-03-23 | 2020-10-28 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| JP7246231B2 (ja) * | 2019-03-29 | 2023-03-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物および磁気ディスク基板製造方法 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2725192B2 (ja) * | 1988-12-09 | 1998-03-09 | 株式会社フジミインコーポレーテッド | 研磨剤組成物 |
| US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
| JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| KR100447551B1 (ko) * | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
| CN100335580C (zh) * | 1999-08-13 | 2007-09-05 | 卡伯特微电子公司 | 含有阻化化合物的抛光系统及其使用方法 |
| US7041599B1 (en) * | 1999-12-21 | 2006-05-09 | Applied Materials Inc. | High through-put Cu CMP with significantly reduced erosion and dishing |
| US6569215B2 (en) * | 2000-04-17 | 2003-05-27 | Showa Denko Kabushiki Kaisha | Composition for polishing magnetic disk substrate |
| JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002198331A (ja) * | 2000-12-26 | 2002-07-12 | Jsr Corp | 研磨方法 |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP2002270546A (ja) * | 2001-03-07 | 2002-09-20 | Hitachi Chem Co Ltd | 導体用研磨液及びこれを用いた研磨方法 |
| US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| JP4231632B2 (ja) * | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
| SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US20040253809A1 (en) * | 2001-08-18 | 2004-12-16 | Yao Xiang Yu | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
| WO2003036705A1 (en) * | 2001-10-26 | 2003-05-01 | Asahi Glass Company, Limited | Polishing compound, method for production thereof and polishing method |
| JP2003297779A (ja) * | 2002-03-29 | 2003-10-17 | Sumitomo Bakelite Co Ltd | 研磨用組成物並びに研磨方法 |
| JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
| JP2004153086A (ja) * | 2002-10-31 | 2004-05-27 | Showa Denko Kk | 金属研磨組成物、金属膜の研磨方法および基板の製造方法 |
| JP4202157B2 (ja) * | 2003-02-28 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6918820B2 (en) * | 2003-04-11 | 2005-07-19 | Eastman Kodak Company | Polishing compositions comprising polymeric cores having inorganic surface particles and method of use |
| JP4618987B2 (ja) * | 2003-05-26 | 2011-01-26 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP2005064285A (ja) * | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| JP2005136256A (ja) * | 2003-10-31 | 2005-05-26 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
| US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
| TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
| JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US20060000808A1 (en) * | 2004-07-01 | 2006-01-05 | Fuji Photo Film Co., Ltd. | Polishing solution of metal and chemical mechanical polishing method |
-
2005
- 2005-09-29 US US11/238,256 patent/US20070068902A1/en not_active Abandoned
-
2006
- 2006-09-22 JP JP2006257391A patent/JP5025204B2/ja active Active
- 2006-09-27 MY MYPI20064221 patent/MY150651A/en unknown
- 2006-09-28 GB GB0619096A patent/GB2430680A/en not_active Withdrawn
- 2006-09-28 CN CNA2006101421605A patent/CN1939994A/zh active Pending
-
2007
- 2007-09-14 US US11/855,665 patent/US20080003928A1/en not_active Abandoned
-
2012
- 2012-02-01 JP JP2012020207A patent/JP5775470B2/ja active Active
-
2013
- 2013-09-02 JP JP2013181661A patent/JP5816663B2/ja active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101463292B (zh) * | 2008-11-28 | 2011-11-02 | 江苏海迅实业集团股份有限公司 | 一种车船玻璃表面处理剂 |
| CN103160207A (zh) * | 2011-12-16 | 2013-06-19 | 安集微电子（上海）有限公司 | 一种金属化学机械抛光浆料及其应用 |
| CN106916536A (zh) * | 2015-12-25 | 2017-07-04 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
| CN106916536B (zh) * | 2015-12-25 | 2021-04-20 | 安集微电子（上海）有限公司 | 一种碱性化学机械抛光液 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007092064A (ja) | 2007-04-12 |
| JP5775470B2 (ja) | 2015-09-09 |
| JP5816663B2 (ja) | 2015-11-18 |
| JP2014029759A (ja) | 2014-02-13 |
| MY150651A (en) | 2014-02-14 |
| JP5025204B2 (ja) | 2012-09-12 |
| GB0619096D0 (en) | 2006-11-08 |
| US20080003928A1 (en) | 2008-01-03 |
| GB2430680A (en) | 2007-04-04 |
| US20070068902A1 (en) | 2007-03-29 |
| JP2012131026A (ja) | 2012-07-12 |
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