CN1938415A - 使用超临界流体基组合物促进含硅粒子物质的去除 - Google Patents

使用超临界流体基组合物促进含硅粒子物质的去除 Download PDF

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Publication number
CN1938415A
CN1938415A CNA2005800103219A CN200580010321A CN1938415A CN 1938415 A CN1938415 A CN 1938415A CN A2005800103219 A CNA2005800103219 A CN A2005800103219A CN 200580010321 A CN200580010321 A CN 200580010321A CN 1938415 A CN1938415 A CN 1938415A
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CN
China
Prior art keywords
composition
silicon
scf
containing particulate
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800103219A
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English (en)
Chinese (zh)
Inventor
迈克尔·B·科岑斯基
托马斯·H·鲍姆
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Advanced Technology Materials Inc
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Advanced Technology Materials Inc
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Filing date
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Publication of CN1938415A publication Critical patent/CN1938415A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3749—Polyolefins; Halogenated polyolefins; Natural or synthetic rubber; Polyarylolefins or halogenated polyarylolefins
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
CNA2005800103219A 2004-03-01 2005-02-25 使用超临界流体基组合物促进含硅粒子物质的去除 Pending CN1938415A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,535 US7553803B2 (en) 2004-03-01 2004-03-01 Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US10/790,535 2004-03-01

Publications (1)

Publication Number Publication Date
CN1938415A true CN1938415A (zh) 2007-03-28

Family

ID=34887504

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800103219A Pending CN1938415A (zh) 2004-03-01 2005-02-25 使用超临界流体基组合物促进含硅粒子物质的去除

Country Status (7)

Country Link
US (1) US7553803B2 (https=)
EP (1) EP1735425A2 (https=)
JP (1) JP2007526653A (https=)
KR (1) KR20070006800A (https=)
CN (1) CN1938415A (https=)
TW (1) TW200532759A (https=)
WO (1) WO2005084241A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101643648B (zh) * 2008-08-08 2013-01-23 第一毛织株式会社 用于蚀刻氧化硅层的组合物、使用其蚀刻半导体器件的方法及用于蚀刻半导体器件的组合物
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN113172036A (zh) * 2015-03-26 2021-07-27 生命技术公司 用于处理半导体传感器阵列装置的方法
CN114597119A (zh) * 2022-02-28 2022-06-07 西安交通大学 一种基于超临界流体的高质量氮化硅介质钝化层处理工艺
CN121075910A (zh) * 2025-08-22 2025-12-05 湖南德智新材料股份有限公司 碳化硅表面处理方法

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US20050118832A1 (en) * 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
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JP5548224B2 (ja) * 2012-03-16 2014-07-16 富士フイルム株式会社 半導体基板製品の製造方法及びエッチング液
US9171715B2 (en) * 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP2015013976A (ja) * 2013-07-04 2015-01-22 株式会社ケミコート シリコン溶解洗浄剤組成物及びその溶解洗浄剤を用いた洗浄方法
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
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CN108004534B (zh) * 2017-12-12 2020-10-20 安徽启东热能科技有限公司 一种提升气液分配盘盘体耐腐特性的处理方法

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Publication number Priority date Publication date Assignee Title
CN101643648B (zh) * 2008-08-08 2013-01-23 第一毛织株式会社 用于蚀刻氧化硅层的组合物、使用其蚀刻半导体器件的方法及用于蚀刻半导体器件的组合物
US8685272B2 (en) 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
CN113172036A (zh) * 2015-03-26 2021-07-27 生命技术公司 用于处理半导体传感器阵列装置的方法
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN114597119A (zh) * 2022-02-28 2022-06-07 西安交通大学 一种基于超临界流体的高质量氮化硅介质钝化层处理工艺
CN121075910A (zh) * 2025-08-22 2025-12-05 湖南德智新材料股份有限公司 碳化硅表面处理方法

Also Published As

Publication number Publication date
US7553803B2 (en) 2009-06-30
US20050192193A1 (en) 2005-09-01
JP2007526653A (ja) 2007-09-13
WO2005084241A3 (en) 2006-03-23
EP1735425A2 (en) 2006-12-27
TW200532759A (en) 2005-10-01
KR20070006800A (ko) 2007-01-11
WO2005084241A2 (en) 2005-09-15

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