KR20070006800A - 초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 - Google Patents

초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 Download PDF

Info

Publication number
KR20070006800A
KR20070006800A KR1020067019819A KR20067019819A KR20070006800A KR 20070006800 A KR20070006800 A KR 20070006800A KR 1020067019819 A KR1020067019819 A KR 1020067019819A KR 20067019819 A KR20067019819 A KR 20067019819A KR 20070006800 A KR20070006800 A KR 20070006800A
Authority
KR
South Korea
Prior art keywords
silicon
composition
scf
particulate material
containing particulate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067019819A
Other languages
English (en)
Korean (ko)
Inventor
마이클 비. 코르젠스키
토마스 에이치 바움
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20070006800A publication Critical patent/KR20070006800A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3749—Polyolefins; Halogenated polyolefins; Natural or synthetic rubber; Polyarylolefins or halogenated polyarylolefins
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
KR1020067019819A 2004-03-01 2005-02-25 초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법 Ceased KR20070006800A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/790,535 US7553803B2 (en) 2004-03-01 2004-03-01 Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US10/790,535 2004-03-01

Publications (1)

Publication Number Publication Date
KR20070006800A true KR20070006800A (ko) 2007-01-11

Family

ID=34887504

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067019819A Ceased KR20070006800A (ko) 2004-03-01 2005-02-25 초임계 유체―기반 조성물 및 이를 이용한 실리콘―함유미립자 물질의 제거 방법

Country Status (7)

Country Link
US (1) US7553803B2 (https=)
EP (1) EP1735425A2 (https=)
JP (1) JP2007526653A (https=)
KR (1) KR20070006800A (https=)
CN (1) CN1938415A (https=)
TW (1) TW200532759A (https=)
WO (1) WO2005084241A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130105365A (ko) * 2012-03-16 2013-09-25 후지필름 가부시키가이샤 반도체 기판 제품의 제조 방법 및 에칭액

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US20050118832A1 (en) * 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
JP2009231632A (ja) * 2008-03-24 2009-10-08 Fujitsu Microelectronics Ltd 半導体装置の製造方法
KR101316054B1 (ko) * 2008-08-08 2013-10-10 삼성전자주식회사 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법
US8685272B2 (en) * 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
US8277672B2 (en) * 2009-04-17 2012-10-02 Tiza Lab, LLC Enhanced focused ion beam etching of dielectrics and silicon
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
US9171715B2 (en) * 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP2015013976A (ja) * 2013-07-04 2015-01-22 株式会社ケミコート シリコン溶解洗浄剤組成物及びその溶解洗浄剤を用いた洗浄方法
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
WO2016154438A1 (en) * 2015-03-26 2016-09-29 Life Technologies Corporation Method for treating a semiconductor sensor array device
US9280998B1 (en) 2015-03-30 2016-03-08 WD Media, LLC Acidic post-sputter wash for magnetic recording media
CN106283089A (zh) * 2016-08-25 2017-01-04 仇颖超 一种固液两相机械金属清洗剂的制备方法
KR101966808B1 (ko) 2016-09-30 2019-04-08 세메스 주식회사 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
CN108004534B (zh) * 2017-12-12 2020-10-20 安徽启东热能科技有限公司 一种提升气液分配盘盘体耐腐特性的处理方法
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法
CN114597119B (zh) * 2022-02-28 2025-12-19 西安交通大学 一种基于超临界流体的高质量氮化硅介质钝化层处理工艺
CN121075910A (zh) * 2025-08-22 2025-12-05 湖南德智新材料股份有限公司 碳化硅表面处理方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
US5925611A (en) * 1995-01-20 1999-07-20 Minnesota Mining And Manufacturing Company Cleaning process and composition
US5676705A (en) * 1995-03-06 1997-10-14 Lever Brothers Company, Division Of Conopco, Inc. Method of dry cleaning fabrics using densified carbon dioxide
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5709910A (en) * 1995-11-06 1998-01-20 Lockheed Idaho Technologies Company Method and apparatus for the application of textile treatment compositions to textile materials
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US7044143B2 (en) * 1999-05-14 2006-05-16 Micell Technologies, Inc. Detergent injection systems and methods for carbon dioxide microelectronic substrate processing systems
US6309425B1 (en) * 1999-10-12 2001-10-30 Unilever Home & Personal Care, Usa, Division Of Conopco, Inc. Cleaning composition and method for using the same
JP2002043256A (ja) * 2000-07-27 2002-02-08 Hitachi Ltd 半導体ウエハ平坦化加工方法及び平坦化加工装置
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6958123B2 (en) * 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7018481B2 (en) * 2002-01-28 2006-03-28 Kabushiki Kaisha Toshiba Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6800142B1 (en) * 2002-05-30 2004-10-05 Novellus Systems, Inc. Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment
US7485611B2 (en) * 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) * 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7223352B2 (en) * 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US6624127B1 (en) * 2002-11-15 2003-09-23 Intel Corporation Highly polar cleans for removal of residues from semiconductor structures
US6735978B1 (en) * 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
US8017568B2 (en) * 2003-02-28 2011-09-13 Intel Corporation Cleaning residues from semiconductor structures
US7119052B2 (en) * 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130105365A (ko) * 2012-03-16 2013-09-25 후지필름 가부시키가이샤 반도체 기판 제품의 제조 방법 및 에칭액

Also Published As

Publication number Publication date
US7553803B2 (en) 2009-06-30
US20050192193A1 (en) 2005-09-01
JP2007526653A (ja) 2007-09-13
CN1938415A (zh) 2007-03-28
WO2005084241A3 (en) 2006-03-23
EP1735425A2 (en) 2006-12-27
TW200532759A (en) 2005-10-01
WO2005084241A2 (en) 2005-09-15

Similar Documents

Publication Publication Date Title
US7553803B2 (en) Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US20090192065A1 (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating
EP1572833B1 (en) Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
JP2007526653A5 (https=)
US6310018B1 (en) Fluorinated solvent compositions containing hydrogen fluoride
US6943139B2 (en) Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US20050118832A1 (en) Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US20070251551A1 (en) Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
US20060019850A1 (en) Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
CN1934221A (zh) 用于从离子注入的图案化光致抗蚀剂晶片去除底部抗反射涂层的组合物
CN1871333A (zh) 用于高效清洁/抛光半导体晶片的组合物和方法
KR20060121168A (ko) 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거
TW200405447A (en) Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
CN101198683B (zh) 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
EP1957609A1 (en) In situ fluoride ion-generating compositions and uses thereof
HK1103756A (en) Removal of mems sacrificial layers using supercritical fluid/chemical formulations
HK1086785A (en) Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060925

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20100225

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20120116

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20121029

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20120116

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I