CN1929149A - 高密度槽沟金属氧化物场效应管(mosfet)的源极接触和金属复盖方案 - Google Patents

高密度槽沟金属氧化物场效应管(mosfet)的源极接触和金属复盖方案 Download PDF

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CN1929149A
CN1929149A CNA2006100837986A CN200610083798A CN1929149A CN 1929149 A CN1929149 A CN 1929149A CN A2006100837986 A CNA2006100837986 A CN A2006100837986A CN 200610083798 A CN200610083798 A CN 200610083798A CN 1929149 A CN1929149 A CN 1929149A
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mosfet unit
mosfet
layer
source
unit
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谢福渊
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  • Electrodes Of Semiconductors (AREA)

Abstract

一个槽沟金属氧化物半导体场效应晶体管(MOSFET)单元包含一个被源极区域环绕著的沟槽栅极，此源极区域包含在一个安排于衬底底部表面上的漏极区域上面的基体区域内。该MOSFET单元进一步包含一个在源区和基体区内开的，侧壁实际垂直于顶部表面的，并用接触金属塞填充的源体接触沟槽。

Description

高密度槽沟金属氧化物场效应管(MOSFET) 的源极接触和金属复盖方案
技术领域
本发明一般是有关于功率半导体器件的单元结构和制造步骤。本发明特别是有关于生产一种具有改良源极金属接触的槽沟半导体功率器件，其中新的和改良的单元结构和改良的生产步骤。
技术背景
当单元中之间距缩小时，传统工艺在一个半导体器件的制程中遭遇了一技术难点；就是在形成对N+源极和P-基体的铝金属接触点的金属覆盖不良，和不牢靠的导电接触。当一个金属氧化物半导体场效应晶体管单元的密度增加到每平方英寸2亿个单元(200M/in2)时，单元间距减小到1.8微米甚至更小尺寸时，这种技术困难特别显著。对于单元密度高于每平方英寸2亿个单元的情形，N+源区和P-基体区两者间的金属接触的空间已小于1.0微米，这将引起不良的金属阶梯覆盖和至N+区和P-基体区之间的高的连接电阻。这些不良接触会使器件的性能变坏，产品的可靠性也将降低。
图1示出的是，一个标准传统式的MOSFET单元10，它生成于一个在底部表面上有一个第一类导电特性的漏极区域的半导体衬底，即N+衬底15上。槽沟MOSFET单元形成于一个第一类导电的外延层，例如一个有较衬底低的掺杂浓度的N-外延层，20的顶部。一个第二类导电类型的基体区域25，例如一个P型基体区域25，形成于外延层20内，且此基体区域25包含一个第一类导电的源极区域，例如N+源极区域，30。每一个MOSFET单元进一步包含一个安排于一个以栅极氧化物层40与周围外延层20绝缘起来的沟槽内的N+掺杂的多晶硅栅极35。此MOSFET单元从顶部用一个非掺杂硅玻璃(NSG)层和一个硼磷硅玻璃(BPSG)层45-1和45-2绝缘起来，此绝缘层上有源极接触开口，允许一个包含Ti或者Ti/TiN的源极金属接触层50接通栅极区域30。一个单金属接触层60覆盖于顶部，以水平地连接N+和P-井。图1示出的是先前技艺的MOSFET单元，由于单元间距的缩小，它遇到两个基本问题。问题之一是到N+源区和P-基体两者的接触面积都缩小了，引起高的接触电阻。另一个问题是由于接触高度与开口尺寸的大的纵横比，造成的不良金属阶梯覆盖。
在专利6,628,826中，Zeng等人披露了一种如图2所示的金属氧化物半导体功率器件，它包含V形凹槽接触以使单层金属以竖直地电接触源极。此种连接的极限尺寸(Critical Dimension)能够显著减小而不增加接触电阻，然而，以湿化学刻蚀法形成的V形凹槽接触是不容易控制的。此外，由于小的接触(点)接触临界尺寸受限于铝金属阶梯覆盖。
因此，半导体器件的生产中，特别是对于槽沟功率MOSFET设计和制造中，仍需要提供一种新的晶体管结构和生产工艺以解决这些困难和设计的局限性。
发明内容
因此本发明的一个目标是提供新的和改良的方法以形成一个可靠的源极接触金属层，以使上面讨论的技术上的困难得以解决。
明确地说，本发明的一个目的是提供一个新的和改良的单元结构和制造方法，用氧化物刻蚀，接著用硅刻蚀开一个源极-基体接触沟槽以形成一个源极金属接触。随后用一个金属塞填充源极-基体接触沟槽，以确保建立可靠的源极连接。
本发明的另一方面是用形成至顶部厚金属有较大接触面积的一个薄的低电阻层来降低源极和基体间的电阻。此薄的低电阻层形成一个从源极-基体接触沟槽顶部开口到源极-基体金属接触塞的良好的接触。
本发明的另一个方面是用邦钉线或铜片将前端的厚金属层与引线框架连接起来。这些铜片连线减少了电阻并且改善了散热性能。
本发明的另一个方面是用不均匀刻蚀方法形成一个顶部开口较宽的沟槽来进一步降低源极和基体的电阻。随后，在有较宽开口面积的MOSFET单元的顶部形成一个薄的低电阻层以连接安置在源极-基体接触沟槽内的金属连接塞。此薄的低电阻层与顶部厚金属有较大的接触面积。此薄的低电阻层进一步改善了从原极-基体接触沟槽的顶部开口到有大接触面积的源极-基体金属接触塞的接触。
简短地说，在一个推荐的方案中，本发明披露了一个开沟槽的金属氧化物半导体场效应晶体管(MOSFET)单元，此单元包括一个被源极区域环绕著的沟槽栅极，而该源极区域又包含于一个安排在衬底底表面上面的漏极区域之上的基体区内。此MOSFET单元进一步包括一个侧壁实际垂直于顶部表面在源极区域和基体区域内开出的填满接触金属塞的源极-基体接触沟槽。在一个推荐的方案中，此接触金属塞进一步由一个环绕著一个钨核心的Ti/TiN阻挡层所组成，作为源极-基体接触金属。在另一个推荐的方案中，此MOSFET单元进一步包括一个覆盖在MOSFET单元顶部表面上的绝缘层，其中，源极-基体接触沟槽就是穿过此绝缘层开出的。此MOSFET单元进一步包括一个安排在绝缘层顶部表面覆盖著绝缘层并连接接触金属塞的电阻减小的导电层，此电阻减小导电层有较接触金属塞顶部表面大的面积，以减少源体电阻。在另一个推荐的方案中，此填充于源极-基体接触沟槽内的接触金属塞由一个实际圆柱形的塞子组成。在另一个推荐的方案中，此MOSFET单元进一步包括一个安排于的电阻减小层顶部上的厚的前端金属层，以给导线邦钉封装或无线邦钉封装提供一个接触层。在另一个预备的推荐方案中，此源体接触沟槽具有阶状的侧壁，而且所述填充于所述源体接触沟槽内的上述金属塞由一个具有顶部较宽接触面积的杯子形塞子所组成。
本发明更进一步披露了一种制造沟槽金属氧化物半导体场效应晶体管(MOSFET)单元的方法。此方法包括，一个形成所述具有一个被源极区域环绕著的沟槽栅极的MOSFET单元的步骤，此源极区域包含在安置于衬底底表面上的一个漏极区域上面的体区域之内。此方法更进一步包括一个用一绝缘层覆盖MOSFET单元，并应用一个接触光罩，在源极区域和基体区域内开一个侧壁实际垂直于绝缘层上表面的源极-基体接触沟槽的步骤。此方法更进一步包括一个用接触金属塞填充源极-基体接触沟槽的步骤。在一个推荐的方案中，以绝缘层覆盖MSOFET单元的步骤进一步包含一个在MOSFET单元顶部沉积两种不同的氧化物层，并应用非均匀氧化物刻蚀法生成一个有顶部较宽开口、有阶状侧壁的源体接触沟槽的步骤。
毫无疑问，对于那些熟悉本领域的一般技能的人而言，在阅读过以下各种各样插图的推荐方案的详细描述后，将会非常明了本发明的这些和其他的目标和优势。
附图说明
图1：是传统MOSFET器件的侧面剖视图。
图2：是一个获准专利所披露的具有V型凹槽接触的沟槽MOSFET器件的侧面剖视图。
图3：是本发明中的具有改善源极塞接触的MOSFET器件的侧面剖视图。
图4：是本发明中另一种具有填充在一个有阶状的侧壁的接触沟槽内的改善源极塞接触的MOSFET器件的侧面剖视图。
图5A至图5J：是一系列连续的侧剖面图，用以说明制作图3所示的半导体沟槽的加工步骤。
图5F’：是一个侧剖面图，用以阐明用不均匀刻蚀法生成一个具有阶状侧壁的，在其中沉积香槟酒杯型源极-基体接触的源极-基体接触沟槽。
图6A和6B：是根据本发明中两种不同的方案的两种邦钉接线的俯视图。
具体实施方式
本发明的第一个推荐方案请参见图3，一个金属氧化物半导体场效应晶体管(MOSFET)器件100支撑于有外延层110的衬底105上。此MOSFET器件100包括一个在壁上有栅极绝缘层115的槽内的沟槽栅极120。一个用第二类导电型的掺杂剂，例如P型掺杂剂，掺杂的基体区域125伸延于沟槽栅极之间。此P基体区125包含一个第一类导电型杂质，例如N+型杂质，掺杂的源极区域130。源极区域130生成于围绕沟槽栅极125的外延层的顶部表面附近。半导体衬底的顶部表面伸延到沟槽栅极的顶部，P基体区域125和源极区域130分别以非掺杂硅玻璃(NSG)保护层135和硼磷硅玻璃(BPSG)保护层140覆盖。
为改善源极对源极区域130的接触，许多沟槽源极接触用被Ti/TiN阻挡层150环绕著的钨塞145填充。这些接触沟槽是穿过非掺杂硅玻璃(NSG)保护层135和硼磷硅玻璃(BPSG)保护层140开的，以连接源区130和P基体区125。随后在顶部表面上生成一个导电层155，以接触该沟槽源极接触145和150。接著在源极接触层155顶上生成一个顶部接触层160。此顶部接触层160是用Al，Al-Cooper，AlCuSi或Ni/Ag，Al/NiAu，AlCu/NiAu或AlCuSi/NiAu生成，作为邦钉打线层。导电层155夹在顶部邦钉打线层160和沟槽源极塞顶部之间，形成接触，用提供较大的电接触面积降低了电阻。
图4示出的是与图3中所示器件结构相似的另一种MOSFET器件100*。此MOSFET器件也有一个被Ti/TiN传导阻挡层围绕著的钨组成的源极接触塞，唯一的不同之处是放置源极接触塞145*的沟槽的形状不同，此沟槽有阶状的边壁，从而塞子145*的形状像一只香槟酒杯。此阶状侧壁的源体接触沟槽有其它的优点。由于有一个顶部较宽的开口，提供了一个较宽的接触面积，使得源体接触塞与顶部厚金属层间的电阻进一步降低。
图5A至图5J是一系列横剖面图用以阐明图3中所示MOSFET器件的制作步骤。在图5A中，用光刻胶206在支撑于衬底205上的外延层206内开了很多沟槽208。图5B是用氧化法生成覆盖沟槽壁的氧化物层215的情形。沟槽用一种牺牲性氧化物氧化，以除去在开沟槽过程中等离子损伤的硅层。随后沉积一个多晶硅层220，以填充沟槽并覆盖顶部表面，之后用N+杂质掺杂。图5C所示的是多晶硅层220被刻蚀掉，接著以P型杂质注入P型基体。随后，升高温度以使P型基体225扩散到外延层210中。在图5D中采用一个源极光罩228，接著用N型杂质作源极注入。随后，升高温度以扩散源极区域230。在图5E中，在顶部表面上沉积了一个非掺杂硅玻璃(NSG)层235和一个硼磷硅玻璃层240。在图5F中用一个接触光罩来完成接触刻蚀开出接触开口244，此接触开口是用一种氧化刻蚀法穿过BPSG和NSG层开出的，接著用硅刻蚀法更深入源区230和基体区225开出一些接触开口242。这样，此MOSFET器件包含一个源极-基体接触沟槽244，此沟槽有一个首先用氧化刻蚀穿过氧化物层，例如BPSG和NSG层，而形成的氧化物沟槽。源极-基体接触沟槽244进一步包括一个用氧刻蚀法接著用硅刻蚀法生成的硅沟槽。此氧刻蚀和硅刻蚀法可以是一个干氧化物刻蚀和硅刻蚀，源极-基体接触沟槽的临界尺寸是较好地控制的。在图5G中，在顶层上沉积了一个Ti/TiN层245，接著在充满接触开口内的顶部表面生成一个钨层250，作为源极和基体的接触塞。在图5H中，以钨刻蚀法刻蚀掉钨层250。在图5I中，以Ti/TiN刻蚀法刻蚀掉Ti/TiN层245。在图5J中在顶部表面上沉积了低阻金属层255。此低电阻金属层可以由Ti或Ti/TiN组成，以保证建立良好的电接触。
图5F’中更深入地谈到在完成图5F中所示步骤后的一个附加的非均匀刻蚀方法。在图5F’中采用(10∶1)稀释氢氟酸来进行NSG和PBSG的非均匀刻蚀。由于NSG层235和BPSG层240的不同的刻蚀速率形成了有阶状侧壁的沟槽244’。假如是100∶1稀释的氢氟酸，NSG的刻蚀速率为50埃/分，BPSG的刻蚀速率为300埃/分。为了制作如图4中所示的有香槟酒杯形的接触塞的，有阶状(侧壁)的源极-基体接触沟槽的MOSFET器件，按照以上描述的示于图5G至图5J的步骤就可以完成制作。
进一步在低电阻金属层255，例如图3中的顶部接触层160的上面沉积一个如图6A和图6B中所示的顶部接触层260，就完成了器件的制作。此顶部金属层可以是Al，AlCu或AlCuSi供金线或铝线270邦钉之用，如图6A中所示；当以Ni/Ag，Al/NiAu或AlCu/NiAu或AlCiSi/NIAu作为顶部金属接触层260’时，供无线焊接邦钉之用，此时用连接到一个源电极S的铜盘275，如图6B中所示，以降低通电阻和改善热学特性。
虽然，本发明一直用目前推荐方案来描述，但是不应该认为这些披露是被局限的。那些对本领域技术娴熟的工作者在读过以上披露后无疑会做出多种多样的修改和替换。因而可以期望，那些附加的权力要求应该解释为涵盖所有那些属于本发明领域或符合本发明精神实质的替换与修改。

Claims (29)

1.槽沟金属制的氧化物半导体场效应晶体管(MOSFET)单元包含一个被源极区域环绕著的沟槽栅极，而该源极区域又包含于一个安排在衬底底表面上面的漏极区域之上的基体区内。其中，所述的MOSFET单元进一步包含：一个向源区和体区内部挖的，侧壁实际垂直于顶部表面的，用接触金属塞填充的源体接触沟槽。
2.权利要求1中的MOSFET单元：该接触金属塞进一步由一个围绕著一个钨核心的Ti/TiN阻挡层所组成，作为源体接触金属。
3.权利要求1中的MOSFET单元进一步包含：一个覆盖于所述MOSFET单元顶部表面上的绝缘层，其中前述源体绝缘沟槽就是穿过上述绝缘层开的，以及，
一个安置于顶部表面上的薄的电阻减小导电层覆盖著所述绝缘层并连接所述接触金属塞，以此所述电阻减小导电层有比上述接触金属塞顶部表面大的面积以降低源极-基体电阻。
4.权利要求1的MOSFET单元中：填充于所述源体接触沟槽内的所述接触金属塞包含一个实际是圆柱形的塞子。
5.权利要求3的MOSFET单元进一步包含：一个安排在所述电阻减小层顶部上的厚的前端金属层，为引线或无引线邦钉封装提供一个接触层。
6.权利要求1的MOSFET单元进一步包含：该源体接触沟槽进一步包含一个穿过一覆盖于所指MOSFET器件顶部表面上的氧化物层用氧刻蚀法生成的氧化物沟槽。
7.权利要求1的MOSFET单元进一步包含：该源体接触沟槽进一步包含一个为把所述源体接触沟槽深入到硅衬底内，通过氧刻蚀之后的硅刻蚀而生成的硅沟槽。
8.权利要求1的MOSFET单元进一步包含：该源体接触沟槽进一步包含一个用干氧化物和硅刻蚀法开的沟槽，该方法使所述源体接触沟槽的临界尺寸得以较好地控制。
9.权利要求1的MOSFET单元进一步包含：该源体接触沟槽进一步包含一个以干氧化物和硅刻蚀法开出的，随后用一个湿氧化物层以形成不规则形状的沟槽侧壁。
10.权利要求1的MOSFET单元中：该接触金属塞还接触到所述源体接触沟槽的侧壁上的所指源极区域，而且，接触金属塞通过所述源体接触沟槽底部表面接触到所述的基体区。
11.权利要求3的MOSFET单元中：所述薄的电阻减小导电层包含一个钛(Ti)层。
12.权利要求3的MOSFET单元中：所述薄的电阻减小导电层包含一个氮化钛(TiN)层。
13.权利要求5的MOSFET单元中：所述前端厚金属层由一个铝层所组成。
14.权利要求5的MOSFET单元中：所述前端厚金属层包含一个AlCu层。
15.权利要求5的MOSFET单元中：所述前端厚金属层由包含一个AlCuSi层。
16.权利要求5的MOSFET单元中：所述前端厚金属层包含一个Al/NiAu层。
17.权利要求5的MOSFET单元中：所述前端厚金属层包含一个AlCu/NiAu层。
18.权利要求5的MOSFET单元中：所述前端厚金属层包含一个AlCuSi/NiAu层。
19.权利要求5的MOSFET单元中：所述前端厚金属层包含一个NiAg层。
20.权利要求5的MOSFET单元中：所述前端厚金属层包含一个NiAu层。
21.权利要求1的MOSFET单元中：所述MOSFET单元进一步包含一个N型沟道MOSFET单元。
22.权利要求1的MOSFET单元中：所述MOSFET单元进一步包含一个P型沟道MOSFET单元。
23.权利要求1的MOSFET单元中：所述源体接触沟槽有阶状的侧壁，以及，填充于所述源-基体接触沟槽内的接触金属塞包含一个有较宽顶部接触面积的实际是酒杯形的塞子。
24.权利要求5的MOSFET单元进一步包含：一些将所述厚的前端金属层连接到引线框的铝线。
25.权利要求5的MOSFET单元进一步包含：一些将所述厚的前端金属层连接到引线框的金线。
26.权利要求5的MOSFET单元进一步包含：一个用于连接所述厚的前端金属层到引线框的Cooper盘。
27.一种制造槽沟金属氧化物半导体场效应晶体管(MOSFET)单元的方法包含一个形成一个有被源极区环绕著的沟槽栅极的MOSFET单元的步骤，该源极区域包含在一个安置在衬底底表面上的漏极区域上面的体区域内。此方法进一步包含：
用一个绝缘层覆盖所述MOSFET单元，以及，用一个接触光罩在所述源极和基体区域内开出侧壁实际垂直于所述绝缘层上表面的源体接触沟槽。
28.权利要求27的方法进一步包含：用接触金属塞填充所述源体接触沟槽。
29.权利要求27的方法中：所述用一个绝缘层覆盖所述MOSFET单元的步骤进一步包含一个在所述MOSFET单元顶部沉积两种不同氧化物层，并应用一个非均匀氧化物刻蚀形成一个顶部开口较宽，具有阶状侧壁的源体机触沟槽的步骤。
CNA2006100837986A 2005-06-06 2006-06-06 高密度槽沟金属氧化物场效应管(mosfet)的源极接触和金属复盖方案 Pending CN1929149A (zh)

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