CN1918659B - 使用快速低电压操作的高压驱动器电路 - Google Patents

使用快速低电压操作的高压驱动器电路 Download PDF

Info

Publication number
CN1918659B
CN1918659B CN2005800045779A CN200580004577A CN1918659B CN 1918659 B CN1918659 B CN 1918659B CN 2005800045779 A CN2005800045779 A CN 2005800045779A CN 200580004577 A CN200580004577 A CN 200580004577A CN 1918659 B CN1918659 B CN 1918659B
Authority
CN
China
Prior art keywords
voltage
voltage driver
transistor
driver
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800045779A
Other languages
English (en)
Chinese (zh)
Other versions
CN1918659A (zh
Inventor
M·M·N·斯托尔姆斯
B·J·丹尼尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1918659A publication Critical patent/CN1918659A/zh
Application granted granted Critical
Publication of CN1918659B publication Critical patent/CN1918659B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Electronic Switches (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
CN2005800045779A 2004-02-11 2005-02-08 使用快速低电压操作的高压驱动器电路 Expired - Fee Related CN1918659B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04100502 2004-02-11
EP04100502.6 2004-02-11
PCT/IB2005/050488 WO2005078729A2 (en) 2004-02-11 2005-02-08 High voltage driver circuit with fast reading operation

Publications (2)

Publication Number Publication Date
CN1918659A CN1918659A (zh) 2007-02-21
CN1918659B true CN1918659B (zh) 2010-06-16

Family

ID=34854677

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800045779A Expired - Fee Related CN1918659B (zh) 2004-02-11 2005-02-08 使用快速低电压操作的高压驱动器电路

Country Status (8)

Country Link
US (1) US7746125B2 (ko)
EP (1) EP1714286B1 (ko)
JP (1) JP2007524181A (ko)
KR (1) KR20060114008A (ko)
CN (1) CN1918659B (ko)
AT (1) ATE417348T1 (ko)
DE (1) DE602005011574D1 (ko)
WO (1) WO2005078729A2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7668018B2 (en) * 2007-04-03 2010-02-23 Freescale Semiconductor, Inc. Electronic device including a nonvolatile memory array and methods of using the same
US8410839B2 (en) 2009-02-20 2013-04-02 Conexant Systems, Inc. Systems and methods for driving high power states using lower voltage processes
US7982525B2 (en) * 2009-02-20 2011-07-19 Conexant Systems, Inc. Systems and methods for driving high power stages using lower voltage processes
US8421518B2 (en) 2011-03-09 2013-04-16 Conexant Systems, Inc. High speed level shifters and method of operation
CN102571069B (zh) * 2012-03-19 2015-03-04 中科芯集成电路股份有限公司 一种单电源正负逻辑转换电路
US8791723B2 (en) 2012-08-17 2014-07-29 Alpha And Omega Semiconductor Incorporated Three-dimensional high voltage gate driver integrated circuit
US9117547B2 (en) 2013-05-06 2015-08-25 International Business Machines Corporation Reduced stress high voltage word line driver
US9437673B2 (en) 2014-02-05 2016-09-06 Alpha And Omega Semiconductor Incorporated Floating guard ring for HV interconnect
US10158287B2 (en) 2015-03-26 2018-12-18 Hamilton Sundstrand Corporation Voltage regulator including a buck converter pass switch
US10056833B2 (en) 2015-05-12 2018-08-21 Hamilton Sundstrand Corporation Voltage regulator for inductive loads
CN107592107B (zh) * 2017-09-20 2020-04-10 湖南进芯电子科技有限公司 基于低压cmos工艺的驱动器
FR3086405B1 (fr) 2018-09-24 2020-12-25 St Microelectronics Sa Dispositif electronique capable de former un capteur de temperature ou une source de courant delivrant un courant independant de la temperature.
US11867570B2 (en) 2020-03-06 2024-01-09 Stmicroelectronics Sa Thermal sensor circuit
CN116054356B (zh) * 2023-03-30 2023-06-20 苏州贝克微电子股份有限公司 一种高压差下的快速响应电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739700A (en) * 1996-09-09 1998-04-14 International Business Machines Corporation Method and apparatus with dual circuitry for shifting the level of a signal
CN1450510A (zh) * 2002-04-08 2003-10-22 恩益禧电子股份有限公司 显示器的驱动器电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2803624B2 (ja) * 1996-03-29 1998-09-24 日本電気株式会社 レベルシフト回路
US5889415A (en) * 1996-12-26 1999-03-30 Philips Electronics North America Corporation Internal voltage referenced output driver
JPH1125678A (ja) * 1997-06-27 1999-01-29 Samsung Electron Co Ltd 出力ドライバ及び半導体メモリ装置
US6512401B2 (en) * 1999-09-10 2003-01-28 Intel Corporation Output buffer for high and low voltage bus
US6407579B1 (en) * 2000-01-20 2002-06-18 Koninklijke Philips Electronics N.V. Fast high voltage level shifter with gate oxide protection
FR2817413B1 (fr) * 2000-11-29 2003-02-28 St Microelectronics Sa Dispositif de commutation d'une haute tension et application a une memoire non volatile
US7190206B2 (en) * 2003-07-22 2007-03-13 Samsung Electronics Co., Ltd. Interface circuit and signal clamping circuit using level-down shifter
US7030654B2 (en) * 2003-08-22 2006-04-18 Idaho Research Foundation, Inc. Low voltage to extra high voltage level shifter and related methods
TWI227963B (en) * 2004-01-15 2005-02-11 Via Tech Inc Voltage shifter circuit
FR2871282B1 (fr) * 2004-06-04 2006-09-15 St Microelectronics Sa Dispositif memoire programmable une seule fois
US7193441B2 (en) * 2004-11-18 2007-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Single gate oxide I/O buffer with improved under-drive feature

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739700A (en) * 1996-09-09 1998-04-14 International Business Machines Corporation Method and apparatus with dual circuitry for shifting the level of a signal
CN1450510A (zh) * 2002-04-08 2003-10-22 恩益禧电子股份有限公司 显示器的驱动器电路

Also Published As

Publication number Publication date
US7746125B2 (en) 2010-06-29
ATE417348T1 (de) 2008-12-15
DE602005011574D1 (de) 2009-01-22
US20070170958A1 (en) 2007-07-26
JP2007524181A (ja) 2007-08-23
CN1918659A (zh) 2007-02-21
KR20060114008A (ko) 2006-11-03
EP1714286B1 (en) 2008-12-10
WO2005078729A2 (en) 2005-08-25
EP1714286A2 (en) 2006-10-25
WO2005078729A3 (en) 2006-02-16

Similar Documents

Publication Publication Date Title
CN1918659B (zh) 使用快速低电压操作的高压驱动器电路
JP6911075B2 (ja) 相補的電圧源を使用した分割ゲートフラッシュメモリシステム
US7592849B2 (en) Level shifter for semiconductor memory device implemented with low-voltage transistors
US20060113567A1 (en) Semiconductor integrated circuit and method of producing same
US8154945B2 (en) Decoding circuit withstanding high voltage via low-voltage MOS transistor and the implementing method thereof
CN100419915C (zh) 非易失性半导体存储器件
US7023738B2 (en) Full-swing wordline driving circuit
US10360333B1 (en) Configuration memory circuit
US20070230252A1 (en) Row selector for a semiconductor memory device
JP2006024886A (ja) 半導体集積回路装置
US7965561B2 (en) Row selector occupying a reduced device area for semiconductor memory devices
JPH07254294A (ja) メモリセルプログラミング用集積回路
US5952845A (en) Semiconductor programmable test arrangement such as an antifuse ID circuit having common access switches and/or common programming switches
US6333876B1 (en) Semiconductor memory device
US20070057690A1 (en) Semiconductor integrated circuit
US7064985B2 (en) Source line driver
US6646468B2 (en) Switching device with high-voltage translator
US8780667B2 (en) Semiconductor memory device
JPH03162798A (ja) 不揮発性半導体記憶装置
US20120092041A1 (en) Decoding Circuit Withstanding High Voltage Via Low-Voltage Mos Transistor And The Implementing Method Thereof
US6271571B1 (en) Uprom memory cells for non-volatile memory devices integrated on semiconductors
WO2006067853A1 (ja) 記憶装置のバイアス印加方法、および記憶装置
CN103531239B (zh) 内存抹除方法与其驱动电路
CN117636992A (zh) 半导体存储装置
TWI498904B (zh) 記憶體抹除方法與其驅動電路

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20070817

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20070817

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100616

Termination date: 20190208