CN1914718A - 采用局部绝缘体上半导体制作半导体器件的方法 - Google Patents

采用局部绝缘体上半导体制作半导体器件的方法 Download PDF

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Publication number
CN1914718A
CN1914718A CNA2005800040474A CN200580004047A CN1914718A CN 1914718 A CN1914718 A CN 1914718A CN A2005800040474 A CNA2005800040474 A CN A2005800040474A CN 200580004047 A CN200580004047 A CN 200580004047A CN 1914718 A CN1914718 A CN 1914718A
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CN
China
Prior art keywords
layer
silicon
semiconductor
oxygen
rich
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Pending
Application number
CNA2005800040474A
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English (en)
Chinese (zh)
Inventor
马瑞斯·K.·奥罗斯基
奥拉姆本弥·O·艾德图图
亚历山大·L.·巴尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1914718A publication Critical patent/CN1914718A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNA2005800040474A 2004-02-04 2005-01-12 采用局部绝缘体上半导体制作半导体器件的方法 Pending CN1914718A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/771,855 US7045432B2 (en) 2004-02-04 2004-02-04 Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)
US10/771,855 2004-02-04

Publications (1)

Publication Number Publication Date
CN1914718A true CN1914718A (zh) 2007-02-14

Family

ID=34808535

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800040474A Pending CN1914718A (zh) 2004-02-04 2005-01-12 采用局部绝缘体上半导体制作半导体器件的方法

Country Status (5)

Country Link
US (1) US7045432B2 (https=)
JP (1) JP2007520891A (https=)
KR (1) KR20060130166A (https=)
CN (1) CN1914718A (https=)
WO (1) WO2005076795A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244023A (zh) * 2020-03-25 2020-06-05 上海安微电子有限公司 一种使用扩散型soi硅片制备的半导体器件及其制备方法
CN113948518A (zh) * 2021-09-18 2022-01-18 上海华力集成电路制造有限公司 同时提升pmos和nmos的性能的方法

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US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7078302B2 (en) * 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
JP4434832B2 (ja) * 2004-05-20 2010-03-17 Ｏｋｉセミコンダクタ株式会社 半導体装置、及びその製造方法
US7115955B2 (en) * 2004-07-30 2006-10-03 International Business Machines Corporation Semiconductor device having a strained raised source/drain
US7253493B2 (en) * 2004-08-24 2007-08-07 Micron Technology, Inc. High density access transistor having increased channel width and methods of fabricating such devices
US7226833B2 (en) * 2004-10-29 2007-06-05 Freescale Semiconductor, Inc. Semiconductor device structure and method therefor
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7282425B2 (en) * 2005-01-31 2007-10-16 International Business Machines Corporation Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
WO2007035660A1 (en) * 2005-09-20 2007-03-29 Applied Materials, Inc. Method to form a device on a soi substrate
KR100713924B1 (ko) * 2005-12-23 2007-05-07 주식회사 하이닉스반도체 돌기형 트랜지스터 및 그의 형성방법
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
KR100764360B1 (ko) * 2006-04-28 2007-10-08 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
JP5090451B2 (ja) 2006-07-31 2012-12-05 アプライド マテリアルズ インコーポレイテッド 炭素含有シリコンエピタキシャル層の形成方法
CN101496150B (zh) * 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
KR100764059B1 (ko) * 2006-09-22 2007-10-09 삼성전자주식회사 반도체 장치 및 그 형성 방법
US8334220B2 (en) * 2007-03-21 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of selectively forming a silicon nitride layer
JP5168990B2 (ja) * 2007-04-11 2013-03-27 信越半導体株式会社 半導体基板の製造方法
US7906381B2 (en) * 2007-07-05 2011-03-15 Stmicroelectronics S.A. Method for integrating silicon-on-nothing devices with standard CMOS devices
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
KR101561059B1 (ko) * 2008-11-20 2015-10-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
JP5695614B2 (ja) * 2012-08-22 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
US8957478B2 (en) * 2013-06-24 2015-02-17 International Business Machines Corporation Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
US20160187414A1 (en) * 2014-12-30 2016-06-30 United Microelectronics Corp. Device having finfets and method for measuring resistance of the finfets thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244023A (zh) * 2020-03-25 2020-06-05 上海安微电子有限公司 一种使用扩散型soi硅片制备的半导体器件及其制备方法
CN113948518A (zh) * 2021-09-18 2022-01-18 上海华力集成电路制造有限公司 同时提升pmos和nmos的性能的方法

Also Published As

Publication number Publication date
US7045432B2 (en) 2006-05-16
KR20060130166A (ko) 2006-12-18
US20050170604A1 (en) 2005-08-04
WO2005076795A3 (en) 2005-12-22
JP2007520891A (ja) 2007-07-26
WO2005076795A2 (en) 2005-08-25

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