KR20060130166A - 로컬 ｓｏｉ를 구비한 반도체 디바이스를 형성하는 방법 - Google Patents

로컬 ｓｏｉ를 구비한 반도체 디바이스를 형성하는 방법 Download PDF

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Publication number
KR20060130166A
KR20060130166A KR1020067015698A KR20067015698A KR20060130166A KR 20060130166 A KR20060130166 A KR 20060130166A KR 1020067015698 A KR1020067015698 A KR 1020067015698A KR 20067015698 A KR20067015698 A KR 20067015698A KR 20060130166 A KR20060130166 A KR 20060130166A
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South Korea
Prior art keywords
layer
silicon
semiconductor
oxygen
substrate
Prior art date
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KR1020067015698A
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English (en)
Korean (ko)
Inventor
마리어스 케이. 오로스키
올룸분미 오. 아데투투
알렉산더 엘. 바르
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프리스케일 세미컨덕터, 인크.
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Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20060130166A publication Critical patent/KR20060130166A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020067015698A 2004-02-04 2005-01-12 로컬 ｓｏｉ를 구비한 반도체 디바이스를 형성하는 방법 Withdrawn KR20060130166A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/771,855 US7045432B2 (en) 2004-02-04 2004-02-04 Method for forming a semiconductor device with local semiconductor-on-insulator (SOI)
US10/771,855 2004-02-04

Publications (1)

Publication Number Publication Date
KR20060130166A true KR20060130166A (ko) 2006-12-18

Family

ID=34808535

Family Applications (1)

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KR1020067015698A Withdrawn KR20060130166A (ko) 2004-02-04 2005-01-12 로컬 ｓｏｉ를 구비한 반도체 디바이스를 형성하는 방법

Country Status (5)

Country Link
US (1) US7045432B2 (https=)
JP (1) JP2007520891A (https=)
KR (1) KR20060130166A (https=)
CN (1) CN1914718A (https=)
WO (1) WO2005076795A2 (https=)

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US7078302B2 (en) * 2004-02-23 2006-07-18 Applied Materials, Inc. Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal
JP4434832B2 (ja) * 2004-05-20 2010-03-17 Ｏｋｉセミコンダクタ株式会社 半導体装置、及びその製造方法
US7115955B2 (en) * 2004-07-30 2006-10-03 International Business Machines Corporation Semiconductor device having a strained raised source/drain
US7253493B2 (en) * 2004-08-24 2007-08-07 Micron Technology, Inc. High density access transistor having increased channel width and methods of fabricating such devices
US7226833B2 (en) * 2004-10-29 2007-06-05 Freescale Semiconductor, Inc. Semiconductor device structure and method therefor
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7282425B2 (en) * 2005-01-31 2007-10-16 International Business Machines Corporation Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
WO2007035660A1 (en) * 2005-09-20 2007-03-29 Applied Materials, Inc. Method to form a device on a soi substrate
KR100713924B1 (ko) * 2005-12-23 2007-05-07 주식회사 하이닉스반도체 돌기형 트랜지스터 및 그의 형성방법
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
KR100764360B1 (ko) * 2006-04-28 2007-10-08 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
JP5090451B2 (ja) 2006-07-31 2012-12-05 アプライド マテリアルズ インコーポレイテッド 炭素含有シリコンエピタキシャル層の形成方法
CN101496150B (zh) * 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
KR100764059B1 (ko) * 2006-09-22 2007-10-09 삼성전자주식회사 반도체 장치 및 그 형성 방법
US8334220B2 (en) * 2007-03-21 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of selectively forming a silicon nitride layer
JP5168990B2 (ja) * 2007-04-11 2013-03-27 信越半導体株式会社 半導体基板の製造方法
US7906381B2 (en) * 2007-07-05 2011-03-15 Stmicroelectronics S.A. Method for integrating silicon-on-nothing devices with standard CMOS devices
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
KR101561059B1 (ko) * 2008-11-20 2015-10-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8999798B2 (en) * 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
JP5695614B2 (ja) * 2012-08-22 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
US8957478B2 (en) * 2013-06-24 2015-02-17 International Business Machines Corporation Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
US20160187414A1 (en) * 2014-12-30 2016-06-30 United Microelectronics Corp. Device having finfets and method for measuring resistance of the finfets thereof
CN111244023A (zh) * 2020-03-25 2020-06-05 上海安微电子有限公司 一种使用扩散型soi硅片制备的半导体器件及其制备方法
CN113948518A (zh) * 2021-09-18 2022-01-18 上海华力集成电路制造有限公司 同时提升pmos和nmos的性能的方法

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JPH10144607A (ja) * 1996-11-13 1998-05-29 Hitachi Ltd 半導体基板およびその製造方法ならびにそれを用いた半導体装置およびその製造方法
US6369438B1 (en) * 1998-12-24 2002-04-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
JP3884203B2 (ja) * 1998-12-24 2007-02-21 株式会社東芝 半導体装置の製造方法
JP2001102555A (ja) * 1999-09-30 2001-04-13 Seiko Epson Corp 半導体装置、薄膜トランジスタ及びそれらの製造方法
JP4370647B2 (ja) * 1999-10-08 2009-11-25 株式会社Ｓｕｍｃｏ Ｓｉｍｏｘ基板及びその製造方法
JP4765157B2 (ja) * 1999-11-17 2011-09-07 株式会社デンソー 半導体基板の製造方法
TW478062B (en) * 2000-12-05 2002-03-01 Nat Science Council A method of surface treatment on the improvement of electrical properties for doped SiO2 films
FR2818012B1 (fr) * 2000-12-12 2003-02-21 St Microelectronics Sa Dispositif semi-conducteur integre de memoire
JP2002190599A (ja) * 2000-12-20 2002-07-05 Toshiba Corp 半導体装置及びその製造方法
FR2821483B1 (fr) * 2001-02-28 2004-07-09 St Microelectronics Sa Procede de fabrication d'un transistor a grille isolee et a architecture du type substrat sur isolant, et transistor correspondant
US6429084B1 (en) * 2001-06-20 2002-08-06 International Business Machines Corporation MOS transistors with raised sources and drains
JP2003243528A (ja) * 2002-02-13 2003-08-29 Toshiba Corp 半導体装置
KR100476901B1 (ko) * 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법

Also Published As

Publication number Publication date
US7045432B2 (en) 2006-05-16
CN1914718A (zh) 2007-02-14
US20050170604A1 (en) 2005-08-04
WO2005076795A3 (en) 2005-12-22
JP2007520891A (ja) 2007-07-26
WO2005076795A2 (en) 2005-08-25

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