CN1910304A - 物理气相沉积靶构造 - Google Patents

物理气相沉积靶构造 Download PDF

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Publication number
CN1910304A
CN1910304A CNA2005800022993A CN200580002299A CN1910304A CN 1910304 A CN1910304 A CN 1910304A CN A2005800022993 A CNA2005800022993 A CN A2005800022993A CN 200580002299 A CN200580002299 A CN 200580002299A CN 1910304 A CN1910304 A CN 1910304A
Authority
CN
China
Prior art keywords
target
target construction
region
ring
flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800022993A
Other languages
English (en)
Chinese (zh)
Inventor
S·费拉斯
F·阿尔福德
金在衍
S·I·格拉布梅尔
S·D·斯特罗瑟尔斯
A·N·A·雷格
R·M·普拉特
W·H·霍尔特
M·D·佩顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1910304A publication Critical patent/CN1910304A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CNA2005800022993A 2004-02-03 2005-02-02 物理气相沉积靶构造 Pending CN1910304A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54166504P 2004-02-03 2004-02-03
US60/541,665 2004-02-03

Publications (1)

Publication Number Publication Date
CN1910304A true CN1910304A (zh) 2007-02-07

Family

ID=34837509

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800022993A Pending CN1910304A (zh) 2004-02-03 2005-02-02 物理气相沉积靶构造

Country Status (7)

Country Link
US (1) US7618520B2 (enExample)
EP (1) EP1711646A4 (enExample)
JP (2) JP2007520634A (enExample)
KR (1) KR20060123504A (enExample)
CN (1) CN1910304A (enExample)
TW (1) TWI381061B (enExample)
WO (1) WO2005074640A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101415858B (zh) * 2006-04-04 2012-04-25 普莱克斯技术有限公司 改进溅射靶组件的排气槽
CN105026608A (zh) * 2013-03-15 2015-11-04 应用材料公司 用于自我定心的处理屏蔽件的物理气相沉积靶
CN105874565A (zh) * 2013-12-18 2016-08-17 应用材料公司 具有低摩擦垫的物理气相沉积(pvd)靶材
CN108486535A (zh) * 2018-05-17 2018-09-04 宁波江丰电子材料股份有限公司 靶材组件

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
DE602005021535D1 (de) * 2004-11-17 2010-07-08 Nippon Mining Co Trägerplattenanordnung für sputtertargets und filmabscheidungssystem
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070125646A1 (en) * 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
KR20080106463A (ko) * 2006-04-04 2008-12-05 프랙스에어 테크놀로지, 인코포레이티드 변형된 벤트 홈을 갖는 스퍼터 타겟 조립체
US20080236499A1 (en) * 2007-03-30 2008-10-02 Jean-Pierre Blanchet Vent groove modified sputter target assembly and apparatus containing same
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US20080067058A1 (en) * 2006-09-15 2008-03-20 Stimson Bradley O Monolithic target for flat panel application
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
FR2913429B1 (fr) * 2007-03-05 2009-04-17 H E F Soc Par Actions Simplifi Procede d'assemblage d'au moins deux plaques et utilisation du procede pour la realisation d'un ensemble de pulverisation ionique.
US8002874B2 (en) 2007-03-06 2011-08-23 Membrane Technology And Research, Inc. Liquid-phase and vapor-phase dehydration of organic/water solutions
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8398833B2 (en) * 2008-04-21 2013-03-19 Honeywell International Inc. Use of DC magnetron sputtering systems
US20120027954A1 (en) * 2010-07-30 2012-02-02 Applied Materials, Inc. Magnet for physical vapor deposition processes to produce thin films having low resistivity and non-uniformity
US8968537B2 (en) 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
CN104583454A (zh) 2012-04-26 2015-04-29 因特瓦克公司 用于物理气相沉积处理的窄源
US9633824B2 (en) 2013-03-05 2017-04-25 Applied Materials, Inc. Target for PVD sputtering system
US9831075B2 (en) 2013-09-17 2017-11-28 Applied Materials, Inc. Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
US11244815B2 (en) 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
JP6909645B2 (ja) * 2017-06-21 2021-07-28 スタンレー電気株式会社 スパッタリングターゲット、および、車両用灯具の製造方法
USD1037954S1 (en) 2020-10-23 2024-08-06 Applied Materials, Inc. Self-retained low friction pad
US11618943B2 (en) * 2020-10-23 2023-04-04 Applied Materials, Inc. PVD target having self-retained low friction pads
KR102559553B1 (ko) * 2020-12-08 2023-07-26 (주)지오엘리먼트 상면 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법
US12252777B2 (en) * 2021-05-07 2025-03-18 Taiwan Semiconductor Manufacturing Company Limited Physical vapor deposition (PVD) system and method of processing target
US20240068086A1 (en) * 2022-08-29 2024-02-29 Applied Materials, Inc. Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement
WO2025049077A1 (en) * 2023-09-01 2025-03-06 Applied Materials, Inc. Molybdenum monolithic physical vapor deposition target

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051374A (ja) * 1991-02-05 1993-01-08 Toshiba Corp スパツタリング装置
EP0824760A1 (en) * 1995-05-11 1998-02-25 Materials Research Corporation Sputtering apparatus with isolated coolant and sputtering target therefor
JPH09176849A (ja) * 1995-12-22 1997-07-08 Applied Materials Inc スパッタリングターゲットのアッセンブリ
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
US5935397A (en) * 1998-04-30 1999-08-10 Rockwell Semiconductor Systems, Inc. Physical vapor deposition chamber
US6149776A (en) * 1998-11-12 2000-11-21 Applied Materials, Inc. Copper sputtering target
US6416634B1 (en) * 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
JP3972558B2 (ja) * 2000-06-23 2007-09-05 松下電器産業株式会社 スパッタリング装置
US20020162741A1 (en) * 2001-05-01 2002-11-07 Applied Materials, Inc. Multi-material target backing plate
JP2003293126A (ja) * 2002-04-09 2003-10-15 Fujitsu Ltd スパッタリングターゲット及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101415858B (zh) * 2006-04-04 2012-04-25 普莱克斯技术有限公司 改进溅射靶组件的排气槽
CN105026608A (zh) * 2013-03-15 2015-11-04 应用材料公司 用于自我定心的处理屏蔽件的物理气相沉积靶
CN105874565A (zh) * 2013-12-18 2016-08-17 应用材料公司 具有低摩擦垫的物理气相沉积(pvd)靶材
CN108486535A (zh) * 2018-05-17 2018-09-04 宁波江丰电子材料股份有限公司 靶材组件
CN108486535B (zh) * 2018-05-17 2021-03-12 宁波江丰电子材料股份有限公司 靶材组件

Also Published As

Publication number Publication date
KR20060123504A (ko) 2006-12-01
JP2012255218A (ja) 2012-12-27
US7618520B2 (en) 2009-11-17
TWI381061B (zh) 2013-01-01
JP2007520634A (ja) 2007-07-26
US20060070876A1 (en) 2006-04-06
EP1711646A2 (en) 2006-10-18
TW200535267A (en) 2005-11-01
JP5651145B2 (ja) 2015-01-07
WO2005074640A2 (en) 2005-08-18
EP1711646A4 (en) 2008-05-28
WO2005074640A3 (en) 2006-03-09

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20070207