CN1909229A - 边发射led光源 - Google Patents

边发射led光源 Download PDF

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Publication number
CN1909229A
CN1909229A CNA2006100995941A CN200610099594A CN1909229A CN 1909229 A CN1909229 A CN 1909229A CN A2006100995941 A CNA2006100995941 A CN A2006100995941A CN 200610099594 A CN200610099594 A CN 200610099594A CN 1909229 A CN1909229 A CN 1909229A
Authority
CN
China
Prior art keywords
edge
emitting
light source
leds
emitting led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100995941A
Other languages
English (en)
Chinese (zh)
Inventor
史蒂文·D·莱斯特尔
维金奈·M·罗宾斯
杰弗里·N·米勒
斯科特·W·科尔扎因
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies ECBU IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies ECBU IP Singapore Pte Ltd filed Critical Avago Technologies ECBU IP Singapore Pte Ltd
Publication of CN1909229A publication Critical patent/CN1909229A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling

Landscapes

  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Woven Fabrics (AREA)
  • Led Devices (AREA)
CNA2006100995941A 2005-08-04 2006-08-01 边发射led光源 Pending CN1909229A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/197,010 US20070029555A1 (en) 2005-08-04 2005-08-04 Edge-emitting LED light source
US11/197,010 2005-08-04

Publications (1)

Publication Number Publication Date
CN1909229A true CN1909229A (zh) 2007-02-07

Family

ID=37431387

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100995941A Pending CN1909229A (zh) 2005-08-04 2006-08-01 边发射led光源

Country Status (5)

Country Link
US (1) US20070029555A1 (https=)
EP (1) EP1750307A3 (https=)
JP (1) JP2007043178A (https=)
CN (1) CN1909229A (https=)
TW (1) TW200721538A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110011179A (zh) * 2019-04-22 2019-07-12 长春理工大学 非对称微盘腔边发射半导体激光器阵列叠阵

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
DE102010032041A1 (de) 2010-07-23 2012-01-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung von strahlungsemittierenden Bauelemnenten
DE102011087887A1 (de) * 2011-12-07 2013-06-13 Osram Gmbh Leuchtdiodenanordnung
TWI466343B (zh) * 2012-01-06 2014-12-21 華夏光股份有限公司 發光二極體裝置
FR3003402B1 (fr) * 2013-03-14 2016-11-04 Centre Nat Rech Scient Dispositif monolithique emetteur de lumiere.

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182868A (ja) * 1982-04-20 1983-10-25 Sanyo Electric Co Ltd 化合物半導体の電極
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
US4707716A (en) * 1984-11-02 1987-11-17 Xerox Corporation High resolution, high efficiency I.R. LED printing array and fabrication method
US4890895A (en) * 1987-11-13 1990-01-02 Kopin Corporation Optoelectronic interconnections for III-V devices on silicon
US5105430A (en) * 1991-04-09 1992-04-14 The United States Of America As Represented By The United States Department Of Energy Thin planar package for cooling an array of edge-emitting laser diodes
US5252839A (en) * 1992-06-10 1993-10-12 Hewlett-Packard Company Superluminescent light-emitting diode with reverse biased absorber
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
SE501721C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
US5544269A (en) * 1994-12-14 1996-08-06 Ricoh Company Ltd. Optical transmission module and method of forming the same
JP3258221B2 (ja) * 1995-12-26 2002-02-18 沖電気工業株式会社 位置合わせ用の認識マークおよびその形成方法、認識マークおよび発光部の形成の兼用マスク、位置合わせ用の認識マークを用いた位置合わせ方法
US5848083A (en) * 1996-10-24 1998-12-08 Sdl, Inc. Expansion-matched high-thermal-conductivity stress-relieved mounting modules
US5923692A (en) * 1996-10-24 1999-07-13 Sdl, Inc. No wire bond plate (NWBP) packaging architecture for two dimensional stacked diode laser arrays
AU5156198A (en) * 1996-10-29 1998-05-22 Xeotron Corporation Optical device utilizing optical waveguides and mechanical light-switches
JPH11163397A (ja) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd Led素子及びその製造方法
US6144683A (en) * 1998-01-07 2000-11-07 Xerox Corporation Red, infrared, and blue stacked laser diode array by wafer fusion
JP4224217B2 (ja) * 1998-08-18 2009-02-12 浜松ホトニクス株式会社 半導体レーザスタック装置
US6278055B1 (en) * 1998-08-19 2001-08-21 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically series configuration
US20030053506A1 (en) * 1999-03-31 2003-03-20 Coldren Larry A. High-efficiency series-connected multiple-active region lasers and optical amplifiers
US8829546B2 (en) * 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
US7202506B1 (en) * 1999-11-19 2007-04-10 Cree, Inc. Multi element, multi color solid state LED/laser
US6931042B2 (en) * 2000-05-31 2005-08-16 Sandia Corporation Long wavelength vertical cavity surface emitting laser
US6526082B1 (en) * 2000-06-02 2003-02-25 Lumileds Lighting U.S., Llc P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
US6787814B2 (en) * 2000-06-22 2004-09-07 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device and production method thereof
TW469712B (en) * 2000-06-23 2001-12-21 Nat Science Council Fiber Bragg grating-based optical CDMA encoder/decoder
US20030087121A1 (en) * 2001-06-18 2003-05-08 Lawrence Domash Index tunable thin film interference coatings
US7049004B2 (en) * 2001-06-18 2006-05-23 Aegis Semiconductor, Inc. Index tunable thin film interference coatings
JP2003249383A (ja) * 2002-02-25 2003-09-05 Patoraito:Kk Led表示灯の故障診断回路
US7095050B2 (en) * 2002-02-28 2006-08-22 Midwest Research Institute Voltage-matched, monolithic, multi-band-gap devices
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US6865321B2 (en) * 2002-07-31 2005-03-08 Agilent Technologies, Inc. Optical systems and methods using coupling fixtures for aligning optical elements with planar waveguides
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
KR101156971B1 (ko) * 2003-01-29 2012-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치
JP4155847B2 (ja) * 2003-03-12 2008-09-24 三洋電機株式会社 積層型発光ダイオード素子
US6878970B2 (en) * 2003-04-17 2005-04-12 Agilent Technologies, Inc. Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells
JP4312504B2 (ja) * 2003-05-28 2009-08-12 シャープ株式会社 発光ダイオード素子の電極及び発光ダイオード素子
CN1275337C (zh) * 2003-09-17 2006-09-13 北京工大智源科技发展有限公司 高效高亮度多有源区隧道再生白光发光二极管
JP2005158795A (ja) * 2003-11-20 2005-06-16 Sumitomo Electric Ind Ltd 発光ダイオード及び半導体発光装置
US7397068B2 (en) * 2003-12-23 2008-07-08 Tessera, Inc. Solid state lighting device
JP4130799B2 (ja) * 2003-12-24 2008-08-06 三星電子株式会社 マルチビーム型半導体レーザ
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
TW200603401A (en) * 2004-04-07 2006-01-16 Nl Nanosemiconductor Gmbh Optoelectronic device based on an antiwaveguiding cavity
JP2005354040A (ja) * 2004-05-11 2005-12-22 Rohm Co Ltd 半導体発光素子およびその製法
US7136408B2 (en) * 2004-06-14 2006-11-14 Coherent, Inc. InGaN diode-laser pumped II-VI semiconductor lasers
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
US7287862B2 (en) * 2005-02-18 2007-10-30 Symbol Technologies, Inc. Compact image projection module
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110011179A (zh) * 2019-04-22 2019-07-12 长春理工大学 非对称微盘腔边发射半导体激光器阵列叠阵

Also Published As

Publication number Publication date
EP1750307A3 (en) 2008-01-02
JP2007043178A (ja) 2007-02-15
US20070029555A1 (en) 2007-02-08
TW200721538A (en) 2007-06-01
EP1750307A2 (en) 2007-02-07

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Application publication date: 20070207