CN1906260A - 包括高度支化聚合物的抛光系统 - Google Patents

包括高度支化聚合物的抛光系统 Download PDF

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Publication number
CN1906260A
CN1906260A CNA2005800017764A CN200580001776A CN1906260A CN 1906260 A CN1906260 A CN 1906260A CN A2005800017764 A CNA2005800017764 A CN A2005800017764A CN 200580001776 A CN200580001776 A CN 200580001776A CN 1906260 A CN1906260 A CN 1906260A
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CN
China
Prior art keywords
polishing system
polishing
polymer
dendrimer
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800017764A
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English (en)
Chinese (zh)
Inventor
凯文·莫根伯格
弗雷德·森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN1906260A publication Critical patent/CN1906260A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2005800017764A 2004-01-09 2005-01-05 包括高度支化聚合物的抛光系统 Pending CN1906260A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/755,154 US7255810B2 (en) 2004-01-09 2004-01-09 Polishing system comprising a highly branched polymer
US10/755,154 2004-01-09

Publications (1)

Publication Number Publication Date
CN1906260A true CN1906260A (zh) 2007-01-31

Family

ID=34739520

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800017764A Pending CN1906260A (zh) 2004-01-09 2005-01-05 包括高度支化聚合物的抛光系统

Country Status (11)

Country Link
US (1) US7255810B2 (https=)
EP (1) EP1702015B1 (https=)
JP (1) JP5006048B2 (https=)
KR (1) KR101049981B1 (https=)
CN (1) CN1906260A (https=)
AT (1) ATE444342T1 (https=)
DE (1) DE602005016887D1 (https=)
IL (1) IL176312A (https=)
MY (1) MY142089A (https=)
TW (1) TWI268199B (https=)
WO (1) WO2005071031A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105555889A (zh) * 2013-07-18 2016-05-04 巴斯夫欧洲公司 包含含氧化铈磨料粒子的cmp组合物
CN112714787A (zh) * 2019-03-22 2021-04-27 株式会社大赛璐 半导体布线研磨用组合物
CN115109519A (zh) * 2021-03-18 2022-09-27 三星Sdi株式会社 化学机械抛光浆料组合物及抛光钨图案晶片的方法
CN115305010A (zh) * 2021-03-18 2022-11-08 三星Sdi株式会社 化学机械抛光浆料组合物及抛光钨图案晶片的方法
CN115710463A (zh) * 2021-08-23 2023-02-24 三星Sdi株式会社 用于图案化钨晶片的cmp浆料组成物和钨抛光方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563383B2 (en) 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060090692A1 (en) * 2004-10-29 2006-05-04 Dominguez Juan E Generating nano-particles for chemical mechanical planarization
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP5240478B2 (ja) * 2008-02-18 2013-07-17 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP5576409B2 (ja) 2009-03-13 2014-08-20 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド ナノダイヤモンドを用いた化学機械平坦化
JP5563269B2 (ja) * 2009-10-09 2014-07-30 四日市合成株式会社 ガラスポリッシング加工用組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
US10407594B2 (en) 2011-03-22 2019-09-10 Basf Se Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR20140034231A (ko) * 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
SG11201509209VA (en) * 2013-05-15 2015-12-30 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
JP6947827B2 (ja) 2016-09-23 2021-10-13 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティドＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｅｒａｍｉｃｓ Ａｎｄ Ｐｌａｓｔｉｃｓ， Ｉｎｃ． 化学的機械的平坦化スラリーおよびその形成方法
JP2018074048A (ja) * 2016-10-31 2018-05-10 花王株式会社 シリコンウェーハ用研磨液組成物
AU2019297408B2 (en) 2018-07-04 2024-12-19 Basf Se Iron chelators as activators in alkaline flotation circuits

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4956313A (en) 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5157876A (en) 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5244534A (en) 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5209816A (en) 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5741626A (en) 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US5767014A (en) * 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
ATE405618T1 (de) 1999-08-13 2008-09-15 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
AU6537000A (en) 1999-08-13 2001-03-13 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6468589B2 (en) 2000-02-02 2002-10-22 Jsr Corporation Composition for film formation and insulating film
KR100738774B1 (ko) 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
EP1197587B1 (en) 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
CN1255854C (zh) * 2001-01-16 2006-05-10 卡伯特微电子公司 含有草酸铵的抛光系统及方法
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105555889A (zh) * 2013-07-18 2016-05-04 巴斯夫欧洲公司 包含含氧化铈磨料粒子的cmp组合物
CN105555889B (zh) * 2013-07-18 2018-11-27 巴斯夫欧洲公司 包含含氧化铈磨料粒子的cmp组合物
CN112714787A (zh) * 2019-03-22 2021-04-27 株式会社大赛璐 半导体布线研磨用组合物
CN112714787B (zh) * 2019-03-22 2022-08-19 株式会社大赛璐 半导体布线研磨用组合物
CN115109519A (zh) * 2021-03-18 2022-09-27 三星Sdi株式会社 化学机械抛光浆料组合物及抛光钨图案晶片的方法
CN115305010A (zh) * 2021-03-18 2022-11-08 三星Sdi株式会社 化学机械抛光浆料组合物及抛光钨图案晶片的方法
CN115305010B (zh) * 2021-03-18 2024-04-26 三星Sdi株式会社 化学机械抛光浆料组合物及抛光钨图案晶片的方法
US12077681B2 (en) 2021-03-18 2024-09-03 Samsung Sdi Co., Ltd. CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
CN115710463A (zh) * 2021-08-23 2023-02-24 三星Sdi株式会社 用于图案化钨晶片的cmp浆料组成物和钨抛光方法

Also Published As

Publication number Publication date
ATE444342T1 (de) 2009-10-15
JP5006048B2 (ja) 2012-08-22
TW200531787A (en) 2005-10-01
EP1702015A1 (en) 2006-09-20
KR101049981B1 (ko) 2011-07-19
DE602005016887D1 (de) 2009-11-12
IL176312A0 (en) 2006-10-05
US20050150598A1 (en) 2005-07-14
WO2005071031A1 (en) 2005-08-04
IL176312A (en) 2010-11-30
EP1702015B1 (en) 2009-09-30
US7255810B2 (en) 2007-08-14
TWI268199B (en) 2006-12-11
KR20060121292A (ko) 2006-11-28
MY142089A (en) 2010-09-15
JP2007519783A (ja) 2007-07-19

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Open date: 20070131