KR101049981B1 - 고도로 분지된 중합체를 포함하는 연마 시스템 - Google Patents

고도로 분지된 중합체를 포함하는 연마 시스템 Download PDF

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Publication number
KR101049981B1
KR101049981B1 KR1020067013684A KR20067013684A KR101049981B1 KR 101049981 B1 KR101049981 B1 KR 101049981B1 KR 1020067013684 A KR1020067013684 A KR 1020067013684A KR 20067013684 A KR20067013684 A KR 20067013684A KR 101049981 B1 KR101049981 B1 KR 101049981B1
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KR
South Korea
Prior art keywords
polymer
polishing system
polishing
dendrimer
substrate
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KR1020067013684A
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English (en)
Korean (ko)
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KR20060121292A (ko
Inventor
케빈 모에그겐보르그
프레드 썬
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20060121292A publication Critical patent/KR20060121292A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020067013684A 2004-01-09 2005-01-05 고도로 분지된 중합체를 포함하는 연마 시스템 Expired - Lifetime KR101049981B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/755,154 2004-01-09
US10/755,154 US7255810B2 (en) 2004-01-09 2004-01-09 Polishing system comprising a highly branched polymer
PCT/US2005/000187 WO2005071031A1 (en) 2004-01-09 2005-01-05 Polishing system comprising a highly branched polymer

Publications (2)

Publication Number Publication Date
KR20060121292A KR20060121292A (ko) 2006-11-28
KR101049981B1 true KR101049981B1 (ko) 2011-07-19

Family

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KR1020067013684A Expired - Lifetime KR101049981B1 (ko) 2004-01-09 2005-01-05 고도로 분지된 중합체를 포함하는 연마 시스템

Country Status (11)

Country Link
US (1) US7255810B2 (https=)
EP (1) EP1702015B1 (https=)
JP (1) JP5006048B2 (https=)
KR (1) KR101049981B1 (https=)
CN (1) CN1906260A (https=)
AT (1) ATE444342T1 (https=)
DE (1) DE602005016887D1 (https=)
IL (1) IL176312A (https=)
MY (1) MY142089A (https=)
TW (1) TWI268199B (https=)
WO (1) WO2005071031A1 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR20220130543A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

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US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
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MY158571A (en) 2009-03-13 2016-10-14 Saint Gobain Ceramics Chemical mechanical planarization using nanodiamond
JP5563269B2 (ja) * 2009-10-09 2014-07-30 四日市合成株式会社 ガラスポリッシング加工用組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
KR20140019401A (ko) 2011-03-22 2014-02-14 바스프 에스이 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR20140034231A (ko) * 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
EP2997105A4 (en) * 2013-05-15 2017-01-25 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP2018074048A (ja) * 2016-10-31 2018-05-10 花王株式会社 シリコンウェーハ用研磨液組成物
BR112020026120A2 (pt) 2018-07-04 2021-03-16 Basf Se Método para recuperar seletivamente um mineral a partir de um minério, e, uso de um promotor
JP7644603B2 (ja) * 2019-03-22 2025-03-12 株式会社ダイセル 半導体配線研磨用組成物
KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

Citations (1)

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JPH10135332A (ja) 1996-10-28 1998-05-22 Internatl Business Mach Corp <Ibm> 集積回路及び作製プロセス

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JP4391715B2 (ja) 1999-08-13 2009-12-24 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨系
CN1209430C (zh) 1999-08-13 2005-07-06 卡伯特微电子公司 化学机械抛光系统及其使用方法
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WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220130543A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
US12077681B2 (en) 2021-03-18 2024-09-03 Samsung Sdi Co., Ltd. CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same
KR102745114B1 (ko) * 2021-03-18 2024-12-19 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

Also Published As

Publication number Publication date
WO2005071031A1 (en) 2005-08-04
ATE444342T1 (de) 2009-10-15
US7255810B2 (en) 2007-08-14
JP5006048B2 (ja) 2012-08-22
KR20060121292A (ko) 2006-11-28
TW200531787A (en) 2005-10-01
IL176312A (en) 2010-11-30
EP1702015B1 (en) 2009-09-30
CN1906260A (zh) 2007-01-31
TWI268199B (en) 2006-12-11
JP2007519783A (ja) 2007-07-19
EP1702015A1 (en) 2006-09-20
MY142089A (en) 2010-09-15
DE602005016887D1 (de) 2009-11-12
IL176312A0 (en) 2006-10-05
US20050150598A1 (en) 2005-07-14

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