JP5006048B2 - 高度に分岐したポリマーを含む研磨システム - Google Patents
高度に分岐したポリマーを含む研磨システム Download PDFInfo
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- JP5006048B2 JP5006048B2 JP2006549362A JP2006549362A JP5006048B2 JP 5006048 B2 JP5006048 B2 JP 5006048B2 JP 2006549362 A JP2006549362 A JP 2006549362A JP 2006549362 A JP2006549362 A JP 2006549362A JP 5006048 B2 JP5006048 B2 JP 5006048B2
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- 150000002894 organic compounds Chemical group 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000012285 osmium tetroxide Substances 0.000 description 1
- 229910000489 osmium tetroxide Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical class OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 150000003899 tartaric acid esters Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/755,154 | 2004-01-09 | ||
| US10/755,154 US7255810B2 (en) | 2004-01-09 | 2004-01-09 | Polishing system comprising a highly branched polymer |
| PCT/US2005/000187 WO2005071031A1 (en) | 2004-01-09 | 2005-01-05 | Polishing system comprising a highly branched polymer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007519783A JP2007519783A (ja) | 2007-07-19 |
| JP2007519783A5 JP2007519783A5 (https=) | 2007-12-20 |
| JP5006048B2 true JP5006048B2 (ja) | 2012-08-22 |
Family
ID=34739520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549362A Expired - Lifetime JP5006048B2 (ja) | 2004-01-09 | 2005-01-05 | 高度に分岐したポリマーを含む研磨システム |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US7255810B2 (https=) |
| EP (1) | EP1702015B1 (https=) |
| JP (1) | JP5006048B2 (https=) |
| KR (1) | KR101049981B1 (https=) |
| CN (1) | CN1906260A (https=) |
| AT (1) | ATE444342T1 (https=) |
| DE (1) | DE602005016887D1 (https=) |
| IL (1) | IL176312A (https=) |
| MY (1) | MY142089A (https=) |
| TW (1) | TWI268199B (https=) |
| WO (1) | WO2005071031A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018074048A (ja) * | 2016-10-31 | 2018-05-10 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7563383B2 (en) | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
| US20060090692A1 (en) * | 2004-10-29 | 2006-05-04 | Dominguez Juan E | Generating nano-particles for chemical mechanical planarization |
| US20070077865A1 (en) * | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
| CN101946309A (zh) * | 2008-02-18 | 2011-01-12 | Jsr株式会社 | 化学机械研磨用水系分散体以及化学机械研磨方法 |
| MY158571A (en) | 2009-03-13 | 2016-10-14 | Saint Gobain Ceramics | Chemical mechanical planarization using nanodiamond |
| JP5563269B2 (ja) * | 2009-10-09 | 2014-07-30 | 四日市合成株式会社 | ガラスポリッシング加工用組成物 |
| JP6101421B2 (ja) * | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
| KR20140019401A (ko) | 2011-03-22 | 2014-02-14 | 바스프 에스이 | 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물 |
| EP2518120A1 (en) | 2011-04-28 | 2012-10-31 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine |
| JP5710353B2 (ja) * | 2011-04-15 | 2015-04-30 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
| KR20140034231A (ko) * | 2011-05-24 | 2014-03-19 | 가부시키가이샤 구라레 | 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법 |
| EP2997105A4 (en) * | 2013-05-15 | 2017-01-25 | Basf Se | Chemical-mechanical polishing compositions comprising polyethylene imine |
| EP2826827B1 (en) * | 2013-07-18 | 2019-06-12 | Basf Se | CMP composition comprising abrasive particles containing ceria |
| US20150104940A1 (en) * | 2013-10-11 | 2015-04-16 | Air Products And Chemicals Inc. | Barrier chemical mechanical planarization composition and method thereof |
| JP6435689B2 (ja) * | 2014-07-25 | 2018-12-12 | Ａｇｃ株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
| CN109715751A (zh) | 2016-09-23 | 2019-05-03 | 圣戈本陶瓷及塑料股份有限公司 | 化学机械平坦化浆料及其形成方法 |
| BR112020026120A2 (pt) | 2018-07-04 | 2021-03-16 | Basf Se | Método para recuperar seletivamente um mineral a partir de um minério, e, uso de um promotor |
| JP7644603B2 (ja) * | 2019-03-22 | 2025-03-12 | 株式会社ダイセル | 半導体配線研磨用組成物 |
| KR102745114B1 (ko) * | 2021-03-18 | 2024-12-19 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR20220130544A (ko) * | 2021-03-18 | 2022-09-27 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102782549B1 (ko) * | 2021-08-23 | 2025-03-14 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4671851A (en) | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
| US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4956313A (en) | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
| US4910155A (en) | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
| US5137544A (en) | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
| US5157876A (en) | 1990-04-10 | 1992-10-27 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
| US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5741626A (en) | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
| US5767014A (en) | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
| US6290736B1 (en) | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
| JP4391715B2 (ja) | 1999-08-13 | 2009-12-24 | キャボット マイクロエレクトロニクス コーポレイション | 化学機械的研磨系 |
| CN1209430C (zh) | 1999-08-13 | 2005-07-06 | 卡伯特微电子公司 | 化学机械抛光系统及其使用方法 |
| US6855266B1 (en) | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
| US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| US6468589B2 (en) | 2000-02-02 | 2002-10-22 | Jsr Corporation | Composition for film formation and insulating film |
| KR100738774B1 (ko) | 2000-08-28 | 2007-07-12 | 제이에스알 가부시끼가이샤 | 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법 |
| US6682642B2 (en) | 2000-10-13 | 2004-01-27 | Shipley Company, L.L.C. | Seed repair and electroplating bath |
| WO2002061810A1 (en) * | 2001-01-16 | 2002-08-08 | Cabot Microelectronics Corporation | Ammonium oxalate-containing polishing system and method |
| SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US6589100B2 (en) * | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
-
2004
- 2004-01-09 US US10/755,154 patent/US7255810B2/en not_active Expired - Lifetime
- 2004-12-29 TW TW093141179A patent/TWI268199B/zh not_active IP Right Cessation
-
2005
- 2005-01-05 JP JP2006549362A patent/JP5006048B2/ja not_active Expired - Lifetime
- 2005-01-05 AT AT05705006T patent/ATE444342T1/de active
- 2005-01-05 WO PCT/US2005/000187 patent/WO2005071031A1/en not_active Ceased
- 2005-01-05 EP EP05705006A patent/EP1702015B1/en not_active Expired - Lifetime
- 2005-01-05 DE DE602005016887T patent/DE602005016887D1/de not_active Expired - Lifetime
- 2005-01-05 KR KR1020067013684A patent/KR101049981B1/ko not_active Expired - Lifetime
- 2005-01-05 CN CNA2005800017764A patent/CN1906260A/zh active Pending
- 2005-01-06 MY MYPI20050037A patent/MY142089A/en unknown
-
2006
- 2006-06-14 IL IL176312A patent/IL176312A/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018074048A (ja) * | 2016-10-31 | 2018-05-10 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005071031A1 (en) | 2005-08-04 |
| KR101049981B1 (ko) | 2011-07-19 |
| ATE444342T1 (de) | 2009-10-15 |
| US7255810B2 (en) | 2007-08-14 |
| KR20060121292A (ko) | 2006-11-28 |
| TW200531787A (en) | 2005-10-01 |
| IL176312A (en) | 2010-11-30 |
| EP1702015B1 (en) | 2009-09-30 |
| CN1906260A (zh) | 2007-01-31 |
| TWI268199B (en) | 2006-12-11 |
| JP2007519783A (ja) | 2007-07-19 |
| EP1702015A1 (en) | 2006-09-20 |
| MY142089A (en) | 2010-09-15 |
| DE602005016887D1 (de) | 2009-11-12 |
| IL176312A0 (en) | 2006-10-05 |
| US20050150598A1 (en) | 2005-07-14 |
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