DE602005016887D1 - Poliersystem mit hochverzweigtem polymer - Google Patents

Poliersystem mit hochverzweigtem polymer

Info

Publication number
DE602005016887D1
DE602005016887D1 DE602005016887T DE602005016887T DE602005016887D1 DE 602005016887 D1 DE602005016887 D1 DE 602005016887D1 DE 602005016887 T DE602005016887 T DE 602005016887T DE 602005016887 T DE602005016887 T DE 602005016887T DE 602005016887 D1 DE602005016887 D1 DE 602005016887D1
Authority
DE
Germany
Prior art keywords
polishing system
branched polymer
high branched
polymer
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005016887T
Other languages
German (de)
English (en)
Inventor
Kevin Moeggenborg
Fred Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE602005016887D1 publication Critical patent/DE602005016887D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602005016887T 2004-01-09 2005-01-05 Poliersystem mit hochverzweigtem polymer Expired - Lifetime DE602005016887D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/755,154 US7255810B2 (en) 2004-01-09 2004-01-09 Polishing system comprising a highly branched polymer
PCT/US2005/000187 WO2005071031A1 (en) 2004-01-09 2005-01-05 Polishing system comprising a highly branched polymer

Publications (1)

Publication Number Publication Date
DE602005016887D1 true DE602005016887D1 (de) 2009-11-12

Family

ID=34739520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005016887T Expired - Lifetime DE602005016887D1 (de) 2004-01-09 2005-01-05 Poliersystem mit hochverzweigtem polymer

Country Status (11)

Country Link
US (1) US7255810B2 (https=)
EP (1) EP1702015B1 (https=)
JP (1) JP5006048B2 (https=)
KR (1) KR101049981B1 (https=)
CN (1) CN1906260A (https=)
AT (1) ATE444342T1 (https=)
DE (1) DE602005016887D1 (https=)
IL (1) IL176312A (https=)
MY (1) MY142089A (https=)
TW (1) TWI268199B (https=)
WO (1) WO2005071031A1 (https=)

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US7563383B2 (en) 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060090692A1 (en) * 2004-10-29 2006-05-04 Dominguez Juan E Generating nano-particles for chemical mechanical planarization
US20070077865A1 (en) * 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
CN101946309A (zh) * 2008-02-18 2011-01-12 Jsr株式会社 化学机械研磨用水系分散体以及化学机械研磨方法
MY158571A (en) 2009-03-13 2016-10-14 Saint Gobain Ceramics Chemical mechanical planarization using nanodiamond
JP5563269B2 (ja) * 2009-10-09 2014-07-30 四日市合成株式会社 ガラスポリッシング加工用組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
KR20140019401A (ko) 2011-03-22 2014-02-14 바스프 에스이 중합체성 폴리아민을 포함하는 화학적 기계적 폴리싱 (cmp) 조성물
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR20140034231A (ko) * 2011-05-24 2014-03-19 가부시키가이샤 구라레 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법
EP2997105A4 (en) * 2013-05-15 2017-01-25 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US20150104940A1 (en) * 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
JP6435689B2 (ja) * 2014-07-25 2018-12-12 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
CN109715751A (zh) 2016-09-23 2019-05-03 圣戈本陶瓷及塑料股份有限公司 化学机械平坦化浆料及其形成方法
JP2018074048A (ja) * 2016-10-31 2018-05-10 花王株式会社 シリコンウェーハ用研磨液組成物
BR112020026120A2 (pt) 2018-07-04 2021-03-16 Basf Se Método para recuperar seletivamente um mineral a partir de um minério, e, uso de um promotor
JP7644603B2 (ja) * 2019-03-22 2025-03-12 株式会社ダイセル 半導体配線研磨用組成物
KR102745114B1 (ko) * 2021-03-18 2024-12-19 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR20220130544A (ko) * 2021-03-18 2022-09-27 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법

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US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
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US4956313A (en) 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5157876A (en) 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
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US5209816A (en) 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
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US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
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US5741626A (en) 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US5767014A (en) 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
JP4391715B2 (ja) 1999-08-13 2009-12-24 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨系
CN1209430C (zh) 1999-08-13 2005-07-06 卡伯特微电子公司 化学机械抛光系统及其使用方法
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6468589B2 (en) 2000-02-02 2002-10-22 Jsr Corporation Composition for film formation and insulating film
KR100738774B1 (ko) 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method

Also Published As

Publication number Publication date
WO2005071031A1 (en) 2005-08-04
KR101049981B1 (ko) 2011-07-19
ATE444342T1 (de) 2009-10-15
US7255810B2 (en) 2007-08-14
JP5006048B2 (ja) 2012-08-22
KR20060121292A (ko) 2006-11-28
TW200531787A (en) 2005-10-01
IL176312A (en) 2010-11-30
EP1702015B1 (en) 2009-09-30
CN1906260A (zh) 2007-01-31
TWI268199B (en) 2006-12-11
JP2007519783A (ja) 2007-07-19
EP1702015A1 (en) 2006-09-20
MY142089A (en) 2010-09-15
IL176312A0 (en) 2006-10-05
US20050150598A1 (en) 2005-07-14

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