CN1896877B - 决定方法及曝光方法 - Google Patents

决定方法及曝光方法 Download PDF

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Publication number
CN1896877B
CN1896877B CN2006101063747A CN200610106374A CN1896877B CN 1896877 B CN1896877 B CN 1896877B CN 2006101063747 A CN2006101063747 A CN 2006101063747A CN 200610106374 A CN200610106374 A CN 200610106374A CN 1896877 B CN1896877 B CN 1896877B
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CN
China
Prior art keywords
exposure
graticule
representative
graphics
parameter
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Expired - Fee Related
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CN2006101063747A
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English (en)
Chinese (zh)
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CN1896877A (zh
Inventor
辻田好一郎
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Canon Inc
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Canon Inc
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Publication date
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Publication of CN1896877A publication Critical patent/CN1896877A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2006101063747A 2005-07-15 2006-07-14 决定方法及曝光方法 Expired - Fee Related CN1896877B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005207527A JP4336671B2 (ja) 2005-07-15 2005-07-15 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
JP2005-207527 2005-07-15
JP2005207527 2005-07-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201010243740XA Division CN101916048B (zh) 2005-07-15 2006-07-14 曝光参数的决定方法以及曝光方法

Publications (2)

Publication Number Publication Date
CN1896877A CN1896877A (zh) 2007-01-17
CN1896877B true CN1896877B (zh) 2010-12-29

Family

ID=37609419

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2006101063747A Expired - Fee Related CN1896877B (zh) 2005-07-15 2006-07-14 决定方法及曝光方法
CN201010243740XA Expired - Fee Related CN101916048B (zh) 2005-07-15 2006-07-14 曝光参数的决定方法以及曝光方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201010243740XA Expired - Fee Related CN101916048B (zh) 2005-07-15 2006-07-14 曝光参数的决定方法以及曝光方法

Country Status (5)

Country Link
US (1) US8339579B2 (enExample)
JP (1) JP4336671B2 (enExample)
KR (1) KR100878613B1 (enExample)
CN (2) CN1896877B (enExample)
TW (1) TWI314754B (enExample)

Families Citing this family (11)

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JP2009302206A (ja) 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法
JP2011049232A (ja) * 2009-08-25 2011-03-10 Renesas Electronics Corp 露光装置、露光方法及び半導体装置の製造方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP5835968B2 (ja) 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
JP5656905B2 (ja) * 2012-04-06 2015-01-21 キヤノン株式会社 決定方法、プログラム及び情報処理装置
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
US8815498B2 (en) * 2012-08-22 2014-08-26 Nanya Technology Corp. Method of forming tight-pitched pattern
CN109683447B (zh) * 2019-02-18 2021-01-22 中国科学院微电子研究所 一种光源掩模协同优化初始光源的确定方法及装置
CN111367148B (zh) * 2020-04-10 2022-04-12 联合微电子中心有限责任公司 曲线图形光学邻近修正方法
CN111694227B (zh) * 2020-06-03 2023-03-21 长沙麓邦光电科技有限公司 光控系统及方法

Citations (3)

* Cited by examiner, † Cited by third party
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CN1129852A (zh) * 1994-12-29 1996-08-28 现代电子产业株式会社 用于半导体器件中的曝光掩模
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
CN1570769A (zh) * 2003-04-07 2005-01-26 Asml荷兰有限公司 装置制造方法,掩模组,数据组,掩模图案化方法及程序

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JP3330648B2 (ja) 1992-10-06 2002-09-30 富士通株式会社 光源形状の最適化方法
US5465220A (en) 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US5723233A (en) * 1996-02-27 1998-03-03 Lsi Logic Corporation Optical proximity correction method and apparatus
US6453452B1 (en) * 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6128067A (en) * 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
JP3718058B2 (ja) * 1998-06-17 2005-11-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
SE517345C2 (sv) * 1999-01-18 2002-05-28 Micronic Laser Systems Ab Metod och system för tillverkande av stora skärmpaneler med förbättrad precision
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JP2002134396A (ja) 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
JP4436029B2 (ja) 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
TWI220998B (en) 2001-02-13 2004-09-11 Nikon Corp Exposure method, exposure apparatus and manufacture method of the same
JP2002319539A (ja) 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP4266079B2 (ja) 2001-04-09 2009-05-20 株式会社東芝 原版とその作製方法及びその原版を用いた露光方法
KR100538362B1 (ko) * 2001-04-24 2005-12-21 캐논 가부시끼가이샤 노광방법 및 장치
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP3913151B2 (ja) * 2002-09-10 2007-05-09 キヤノン株式会社 露光装置のパラメータの値を最適化する方法及びシステム、露光装置及び露光方法
US7026106B2 (en) 2003-04-09 2006-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Exposure method for the contact hole
KR20050121728A (ko) 2003-04-16 2005-12-27 가부시키가이샤 니콘 패턴 결정 방법 및 시스템, 마스크의 제조 방법, 결상 성능조정 방법, 노광 방법 및 장치, 그리고 프로그램 및 정보기록 매체
US7355673B2 (en) 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
JP4599048B2 (ja) 2003-10-02 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
CN1129852A (zh) * 1994-12-29 1996-08-28 现代电子产业株式会社 用于半导体器件中的曝光掩模
CN1570769A (zh) * 2003-04-07 2005-01-26 Asml荷兰有限公司 装置制造方法,掩模组,数据组,掩模图案化方法及程序

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2001-244191A 2001.09.07
US 5705299 ,说明书全文.

Also Published As

Publication number Publication date
TWI314754B (en) 2009-09-11
US8339579B2 (en) 2012-12-25
CN1896877A (zh) 2007-01-17
JP4336671B2 (ja) 2009-09-30
CN101916048A (zh) 2010-12-15
TW200715372A (en) 2007-04-16
KR100878613B1 (ko) 2009-01-15
CN101916048B (zh) 2012-05-23
KR20070009417A (ko) 2007-01-18
US20070013896A1 (en) 2007-01-18
JP2007027418A (ja) 2007-02-01

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Granted publication date: 20101229