CN1877372A - 衍射光学元件以及衍射光学元件的制造方法 - Google Patents
衍射光学元件以及衍射光学元件的制造方法 Download PDFInfo
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- CN1877372A CN1877372A CNA2006100746370A CN200610074637A CN1877372A CN 1877372 A CN1877372 A CN 1877372A CN A2006100746370 A CNA2006100746370 A CN A2006100746370A CN 200610074637 A CN200610074637 A CN 200610074637A CN 1877372 A CN1877372 A CN 1877372A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 92
- 238000012937 correction Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 36
- 238000010586 diagram Methods 0.000 description 20
- 238000001259 photo etching Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000012938 design process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004304 visual acuity Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005167918A JP5048930B2 (ja) | 2005-06-08 | 2005-06-08 | 回折光学素子,および,回折光学素子の製造方法 |
JP2005-167918 | 2005-06-08 | ||
JP2005167918 | 2005-06-08 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102144346A Division CN101349773B (zh) | 2005-06-08 | 2006-04-21 | 衍射光学元件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1877372A true CN1877372A (zh) | 2006-12-13 |
CN1877372B CN1877372B (zh) | 2010-05-12 |
Family
ID=37509856
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100746370A Expired - Fee Related CN1877372B (zh) | 2005-06-08 | 2006-04-21 | 衍射光学元件的制造方法 |
CN2008102144346A Expired - Fee Related CN101349773B (zh) | 2005-06-08 | 2006-04-21 | 衍射光学元件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102144346A Expired - Fee Related CN101349773B (zh) | 2005-06-08 | 2006-04-21 | 衍射光学元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7508585B2 (zh) |
JP (1) | JP5048930B2 (zh) |
CN (2) | CN1877372B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102495444A (zh) * | 2011-12-20 | 2012-06-13 | 中国科学院微电子研究所 | 一种四台阶光栅及其制备方法 |
CN103969724A (zh) * | 2014-05-23 | 2014-08-06 | 厦门大学 | 一种衍射光学元件的制作方法 |
CN104237983A (zh) * | 2014-09-30 | 2014-12-24 | 中国空空导弹研究院 | 高效制作高精度多台阶微透镜阵列的方法 |
CN110418986A (zh) * | 2017-03-17 | 2019-11-05 | 大日本印刷株式会社 | 衍射光学元件 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008089923A (ja) * | 2006-09-29 | 2008-04-17 | Oki Electric Ind Co Ltd | 光学素子の製造方法 |
US20090013527A1 (en) * | 2007-07-11 | 2009-01-15 | International Business Machines Corporation | Collapsable connection mold repair method utilizing femtosecond laser pulse lengths |
US8124427B2 (en) | 2009-10-22 | 2012-02-28 | International Business Machines Corporation | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness |
US9018024B2 (en) * | 2009-10-22 | 2015-04-28 | International Business Machines Corporation | Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness |
US8110483B2 (en) * | 2009-10-22 | 2012-02-07 | International Business Machines Corporation | Forming an extremely thin semiconductor-on-insulator (ETSOI) layer |
JP2012014068A (ja) * | 2010-07-02 | 2012-01-19 | Olympus Corp | 光学素子 |
JP7095313B2 (ja) * | 2018-03-05 | 2022-07-05 | 大日本印刷株式会社 | 描画データ生成装置、レジストパターンの形成方法及び凹凸構造体の製造方法 |
WO2019174426A1 (zh) * | 2018-03-12 | 2019-09-19 | Oppo广东移动通信有限公司 | 衍射光学元件及其制造方法、激光投射模组、深度相机与电子装置 |
CN109148637B (zh) * | 2018-09-20 | 2020-10-02 | 南京邮电大学 | 具有阶梯光栅结构的单光子雪崩二极管探测器及制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227915A (en) * | 1990-02-13 | 1993-07-13 | Holo-Or Ltd. | Diffractive optical element |
JP2570946B2 (ja) * | 1992-06-25 | 1997-01-16 | キヤノン株式会社 | カラー画像読取装置 |
US5561558A (en) * | 1993-10-18 | 1996-10-01 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical device |
US5606434A (en) * | 1994-06-30 | 1997-02-25 | University Of North Carolina | Achromatic optical system including diffractive optical element |
JP3287236B2 (ja) * | 1996-10-03 | 2002-06-04 | キヤノン株式会社 | 回折光学素子の製作方法 |
JPH1114813A (ja) * | 1997-06-25 | 1999-01-22 | Canon Inc | 回折光学素子の製造方法 |
JPH11194207A (ja) * | 1997-12-26 | 1999-07-21 | Fuji Photo Optical Co Ltd | 回折型フィルタ |
JP2001235611A (ja) * | 2000-02-25 | 2001-08-31 | Shimadzu Corp | ホログラフィック・グレーティング |
US6810176B2 (en) * | 2000-08-07 | 2004-10-26 | Rosemount Inc. | Integrated transparent substrate and diffractive optical element |
CN1195240C (zh) * | 2002-07-13 | 2005-03-30 | 华中科技大学 | 一种制作多位相衍射光学元件的工艺 |
JP2005140972A (ja) * | 2003-11-06 | 2005-06-02 | Oki Electric Ind Co Ltd | 回折光学素子の製造方法 |
-
2005
- 2005-06-08 JP JP2005167918A patent/JP5048930B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-21 CN CN2006100746370A patent/CN1877372B/zh not_active Expired - Fee Related
- 2006-04-21 CN CN2008102144346A patent/CN101349773B/zh not_active Expired - Fee Related
- 2006-06-06 US US11/447,001 patent/US7508585B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102495444A (zh) * | 2011-12-20 | 2012-06-13 | 中国科学院微电子研究所 | 一种四台阶光栅及其制备方法 |
CN102495444B (zh) * | 2011-12-20 | 2013-10-30 | 中国科学院微电子研究所 | 一种四台阶光栅及其制备方法 |
CN103969724A (zh) * | 2014-05-23 | 2014-08-06 | 厦门大学 | 一种衍射光学元件的制作方法 |
CN104237983A (zh) * | 2014-09-30 | 2014-12-24 | 中国空空导弹研究院 | 高效制作高精度多台阶微透镜阵列的方法 |
CN104237983B (zh) * | 2014-09-30 | 2016-09-28 | 中国空空导弹研究院 | 高效制作高精度多台阶微透镜阵列的方法 |
CN110418986A (zh) * | 2017-03-17 | 2019-11-05 | 大日本印刷株式会社 | 衍射光学元件 |
Also Published As
Publication number | Publication date |
---|---|
JP5048930B2 (ja) | 2012-10-17 |
CN101349773A (zh) | 2009-01-21 |
CN101349773B (zh) | 2010-09-08 |
US7508585B2 (en) | 2009-03-24 |
US20060279844A1 (en) | 2006-12-14 |
JP2006343461A (ja) | 2006-12-21 |
CN1877372B (zh) | 2010-05-12 |
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Address after: Yokohama City, Kanagawa Prefecture, Japan Patentee after: Lapis Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Lapis Semiconductor Co., Ltd. |
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