CN1871883A - 一种在衬底上制造导电层的方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000002243 precursor Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 41
- 239000011810 insulating material Substances 0.000 claims description 29
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000007639 printing Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种在衬底(1)上制造导电层(5)的方法，包括在衬底(1)上沉积绝缘材料，例如光可确定绝缘材料(2)，在绝缘材料中限定用于导电层(5)的凹槽(3)，用前体材料填充凹槽(3)并且固化该材料以提供导电层。
Description
技术领域
本申请涉及一种在衬底上制造导电层的方法和使用该方法制造的装置，尤其是，但不专有地使用在衬底上制造导电层的光可确定的金属镶嵌工艺，例如在有源矩阵显示器(AMLCD)中作为寻址线使用的。
背景技术
随着LCD矩阵阵列变得越来越大和越来越复杂，获得低电阻寻址线的需求逐渐变得越来越重要。减小线电阻的一种方法是例如使用金属镶嵌工艺制造更厚的寻址线。
WO-A-02/47447公开了一种方法，通过使用可固化的、非导电的沉积液体和在干燥以形成导电轨迹的凹槽中沉积液体来印刷三维凹槽，使用喷墨打印头形成印刷电路板。在这种情况中，通过印刷在它的任一侧上的壁来限定凹槽。然而，喷墨方法特别不适用于获得大面积上的覆盖层，如LCD矩阵阵列所需要的。另外，由于沿着凹槽的边缘需要重叠的液滴，所以喷墨方法将遭受具有周期性的不利条件。
发明内容
本发明的目的在于解决上述问题。本发明的目的在于还提供限定用于接收导电材料的凹槽的替换方法。
根据本发明的第一个方面，提供了一种在衬底上制造导电层的方法，包括步骤：使用光可确定绝缘材料来限定用于导电层的凹槽，和用能够形成导电层的材料填充凹槽。
在光可确定绝缘材料中限定的凹槽可以具有陡峭的壁，并因此可以提供导电材料的良好限制。它还可能产生具有圆形顶端边缘的凹槽，其可能参与阻止在连续层中形成断裂，这些层沉积在凹槽上并下降到凹槽中以连接到其内部的导电材料。
可以方便地使用该方法以在有源矩阵液晶显示器中使用的衬底上提供导电层。
根据本发明，提供了一种装置，包括用光可确定绝缘材料覆盖的衬底，该材料具有用于将导电层限定在其中的凹槽。该装置还可以包括在凹槽中的导电层。
该装置可以是有源矩阵液晶显示器。
根据本发明的第二个方面，提供了一种在衬底上制造导电层的方法，包括限定用于导电层的凹槽和将能够形成导电层到凹槽中的材料整平(blading)的步骤。
根据本发明的第二个方面，对于传印平板印刷工艺(offsetlithography printing process)通常在刻版的填充中使用的整平技术可以有利地适合用于在衬底上制造导电层。该方法可以提供用平均数量的材料填充凹槽的非常快速的方法。
可以通过将绝缘层印刷到衬底上限定该凹槽，以便限定凹槽或者通过将材料沉积到衬底上以及由此限定沉积材料中的凹槽，沉积材料可以是光可确定绝缘体。
根据本发明的第三个方面，提供了一种在用于有源矩阵液晶显示器的衬底上制造导电层的方法，该方法包括将绝缘材料印刷到衬底的步骤，使得印刷的材料限定用于导电层的凹槽并且用能够形成导电层的材料填充凹槽。
在用于有源矩阵液晶显示器的衬底的制造中可以有利地使用印刷技术。
附图说明
为了更好地理解本发明，现在将参考附图，完全地借助于实例描述其实施例。
图1是包括在薄膜晶体管(TFT)的AMLCD的示意图；
图2a到2f描述了制造根据本发明的导电层，例如图1中的行或者列地址线的步骤；
图3是解释用于制造图2的图2a到2c中的阶段的工艺的流程图；
图4是描述根据本发明用于在衬底上制造凹槽的替换工艺的流程图；
图5是描述根据本发明用于在衬底上制造凹槽的另一替换工艺的流程图；
图6是描述了需要填充根据本发明制造的凹槽以便于在凹槽中制造导电层的步骤的流程图；和
图7是具有大量印刷到其上的绝缘材料以限定凹槽的衬底的平面图。
具体实施方式
参考图1，可以在光学上透明的电绝缘衬底1上形成AMLCD板，以本领域公知的方式在其上设置LCD像素P的有源开关矩阵。直接参考我们的EP-A-0629003。例如对于用于硅显示器上的液晶，衬底还可以是半导电的，或者和TFT以及其它导电元件下面的绝缘层是导电的，以阻止短路。以矩形的x，y阵列排列像素Px，y，并由x和y驱动电路通过行和列寻址线驱动。
通过例子考虑像素P0，0，它包括液晶显示元件L0，0，借助于TFT0，0液晶显示元件L0，0在不同的光透射率之间转换，TFT0，0具有连接到驱动线x0的它的栅极以及耦接到驱动线y0的它的源极。通过给线x0，y0施加适当的电压，晶体管TFT0，0可以接通和断开，并由此控制LCD元件L0，0的操作。将可以理解的是，显示器的每个像素P是相似的结构，以及当实质上以公知方式运行x和y驱动器电路时可以逐行扫描像素。
参考图2a到2f，图2a描述了处理之前的衬底1，例如玻璃衬底。图2b示出了用光可确定绝缘材料2覆盖的衬底1。图2c描述了形成在绝缘材料2中的凹槽3，在凹槽3的顶部有圆形的边缘4。图2d描述了用导电墨水5填充的凹槽3。图2e描述了固化之后的导电墨水5以及图2f描述了光可确定绝缘材料2的层已经被减小了厚度之后得到的结构。
参考图2和3，光可确定绝缘材料2例如是HD MicrosystemsTMPI-2730系列聚酰亚胺材料，例如PI-2731或者HD MicrosystemsTMHD8000系列聚酰亚胺材料。对本领域技术人员需要处理这种和其它类似的光可确定材料步骤是公知的，并因此将只在该说明书的概要中描述。对于其它的细节，直接参考HD MicrosystemsTM PI-2730 Series LowStress Photodefinable Polyimide Product Information and ProcessGuidelines。
以很多方式中的任一种，包括旋涂、印刷、喷射或者整平(步骤s1)将光可确定绝缘材料2沉积到衬底上。然后使用烘焙工艺将材料2部分固化(步骤s2)，其允许绝缘材料干燥，但是可溶解在显影溶液中。然后，使用水银宽带频谱或者G线，通过曝光除了凹槽3之外的所有区域来产生所需的凹槽图案(步骤s3)。PI-2730系列材料是例如负性工作的，使得曝光的部分变得不可溶。然后，例如使用HD MicrosystemsTMDE-9040显影溶液来显影得到的材料，并用HD MicrosystemsTM RI-9140冲洗溶液或者N-乙酸丁酯清洗(步骤s4)。然后进行最终的固化步骤(步骤s5)。如图2c所示，该材料易于以曲线轮廓被留下，这是有利的，因为随后层可以通过凹槽的顶部上面，并连接到在平滑边缘4具有降低了断裂可能性的凹槽内部中的任何结构。
根据使用的绝缘材料，有多种用于限定凹槽的替换方法，其对于本领域的技术人员将是公知的。例如，参考图4，对于光可确定或者非光可确定的绝缘材料，通过任何适当的方法将材料2沉积在衬底1上(步骤s10)，完全固化该材料(步骤s11)，以及然后将金属层例如铝溅射到绝缘体上以在原位置形成硬掩模(步骤s12)。用光致抗蚀剂涂覆金属层(步骤s13)并预烘焙它(步骤s14)。然后曝光所需的凹槽图案(步骤s15)，对其显影(s16)和光致抗蚀剂后焙烘(s17)。湿法刻蚀凹槽中的曝光金属(步骤s18)以限定下面的绝缘材料2中的凹槽图案。然后可以剥离光致抗蚀剂(步骤s19)以及然后干法刻蚀该金属层下面的有机绝缘体2(步骤s20)以限定凹槽3。可选择地，与其在步骤s19剥离光致抗蚀剂，倒不如可以省略该步骤，在这种情况中在步骤s20中使用蚀刻剂将去除光致抗蚀剂。最后，剥离金属掩模以构成图2c所示的结构(步骤s21)。
在图5所示的另一例子中，绝缘材料2被沉积(步骤s30)、部分固化(步骤s31)、用光致抗蚀剂涂覆(步骤s32)和曝光光致抗蚀剂(步骤s33)以限定凹槽图案。然后显影光致抗蚀剂(步骤s34)，并持续还被称作湿法刻蚀工艺的显影，以去除有机层2，形成凹槽3(步骤s35)。然后去除光致抗蚀剂(步骤s36)和绝缘材料完全固化(步骤s37)。
参考图6，一旦已经限定了凹槽3，凹槽由所需的金属前体5或者在印刷媒介中的微粒悬浮液填充，或者使用刮墨刀，用类似于用墨水填充印刷刻版的方法，用墨水填充凹槽(步骤s40)。这样使得用导电墨水5填充凹槽3，例如图2d中所示的。
然后固化导电墨水(步骤s41)以获得高导电的媒介。固化之后，可以进行清除浮渣平面刻蚀工艺，以去除掉残留在凹槽外部的任何多余材料(步骤s42)。
在固化工艺(步骤s41)中，如图2e所示，墨水5朝着凹槽6的底部收缩至一个取决于它的组成的量，并例如可能导致以它的最初量的25％收缩。
对于大程度的收缩，进一步的处理，例如在衬底上的其它层的沉积可能是困难的。在这种情况中，将固化的绝缘材料2干法刻蚀以减小它的厚度(步骤s43)，如图2f所示，尽管设置减小以维持弯曲的顶部边缘4，基于上面理由其是有利的。有机绝缘材料将在纯氧气或者氧气/六氟化硫(O2/SF6)混合气体或者氧气/四氟化碳(O2/CF4)混合气中刻蚀。厚度降低到必须和随后处理相适应的程度。
通过阅读本发明的公开内容，对于本领域技术人员其它的变化和变型将是显而易见的。这些变化和变型可以包括在衬底上制造导电层的本领域已经公知的等价的和其它特征。
参考图7，作为在用于有源矩阵LCD的衬底的制造中限定绝缘材料中的凹槽的替换，使用印刷工艺，例如传印平板印刷以将绝缘前体10印刷到衬底1上，以便于限定限制凹槽3，以及然后固化绝缘前体以产生绝缘材料10。使用整平技术再次填充凹槽，如上面参考图6解释的。
尽管在该申请中对于特征的特殊组合已经确定了权利要求，应当理解的是，本发明公开的范围还包括在这里明确地或者隐含地或者其任何概括公开的任何新特征或者特征的任何新组合，是否它涉及和如任何权利要求当前所述的相同发明，以及是否它如本发明一样缓解了任何或者全部相同的技术问题。因此本发明给出了提示，在本申请的实施过程中或者在源自于其中的任何其它申请的实施过程中，对于这些特征和/或这些特征的组合，可以确定新的权利要求。
Claims (19)
1、一种在衬底(1)上制造导电层(5)的方法，包括步骤：
使用光可确定绝缘材料(2)限定用于导电层(5)的凹槽(3)；和
用能够形成导电层(5)的材料填充凹槽(3)。
2、根据权利要求1的方法，其中限定凹槽(3)的步骤包括：
将绝缘材料(2)沉积到衬底(1)上；
在绝缘材料中限定图案；和
处理图案以形成凹槽(3)。
3、根据权利要求1或2的方法，包括使用整平技术填充凹槽(3)。
4、根据前述任一项权利要求的方法，其中能够形成导电层(5)的材料包括金属前体。
5、根据权利要求1至3的任一项的方法，其中能够形成导电层(5)的材料包括导电墨水。
6、根据权利要求4或5的方法，还包括固化材料以获得导电层(5)。
7、根据权利要求6的方法，还包括蚀刻绝缘材料，以便相对于导电层的厚度减小该绝缘材料的厚度。
8、根据权利要求6或7的方法，包括在导电层上沉积一个或多个其它功能层。
9、根据前述任一项权利要求的方法，其中导电层包括在有源矩阵液晶显示器中的行或者列线。
10、一种有源矩阵液晶显示器，包括由根据上述权利要求的任一项方法制造的导电层。
11、一种器件，包括用光可确定绝缘材料(2)覆盖的衬底(1)，该绝缘材料具有用于在其中限定导电层(5)的凹槽(3)。
12、根据权利要求11的器件，还包括在凹槽(3)中的导电层(5)。
13、根据权利要求11或12的器件，包括有源矩阵液晶显示器。
14、一种在衬底(1)上制造导电层(5)的方法，包括步骤：
限定用于导电层(5)的凹槽(3)；和
将能够形成导电层(5)的材料整平到凹槽中。
15、根据权利要求14的方法，还包括通过将绝缘材料印刷到衬底上来限定凹槽(3)。
16、根据权利要求14的方法，限定凹槽(3)的步骤包括将材料(2)沉积到衬底(1)上并且在该材料中限定凹槽(3)。
17、根据权利要求16的方法，其中材料(2)包括光可确定材料。
18、根据权利要求14至17的任一项的方法，其中衬底包括在有源矩阵液晶显示器中使用的衬底。
19、一种在用于有源矩阵液晶显示器的衬底上制造导电层(5)的方法，该方法包括步骤：将绝缘材料(10)印刷到衬底(1)上，使得该印刷的材料限定用于导电层的凹槽(3)并且用能够形成导电层(5)的材料填充该凹槽。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0324561.0 | 2003-10-22 | ||
| GBGB0324561.0A GB0324561D0 (en) | 2003-10-22 | 2003-10-22 | A method of producing a conductive layer on a substrate |
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| Publication Number | Publication Date |
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| CN1871883A true CN1871883A (zh) | 2006-11-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800310835A Pending CN1871883A (zh) | 2003-10-22 | 2004-10-15 | 一种在衬底上制造导电层的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20070059939A1 (zh) |
| EP (1) | EP1678991A1 (zh) |
| JP (1) | JP2007510290A (zh) |
| KR (1) | KR20060089251A (zh) |
| CN (1) | CN1871883A (zh) |
| GB (1) | GB0324561D0 (zh) |
| TW (1) | TW200527597A (zh) |
| WO (1) | WO2005041626A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105633094A (zh) * | 2015-12-30 | 2016-06-01 | 昆山国显光电有限公司 | 一种有机发光显示装置及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8940559B2 (en) * | 2011-11-04 | 2015-01-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an integrated orifice plate and cap structure |
| KR101284595B1 (ko) * | 2011-12-23 | 2013-07-15 | 한국생산기술연구원 | 멀티 터치용 터치 스크린 패널 및 그 제조 방법 |
| KR101696411B1 (ko) * | 2013-08-30 | 2017-01-16 | 주식회사 아모센스 | 터치 스크린 패널용 터치 센서, 그 제조방법 및 이를 포함하는 터치 스크린 패널 |
| KR101656452B1 (ko) * | 2013-09-06 | 2016-09-09 | 주식회사 잉크테크 | 전도성 패턴 형성 방법 및 전도성 패턴 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4336320A (en) * | 1981-03-12 | 1982-06-22 | Honeywell Inc. | Process for dielectric stenciled microcircuits |
| US4508753A (en) * | 1982-08-19 | 1985-04-02 | Gte Automatic Electric Inc. | Method of producing fine line conductive/resistive patterns on an insulating coating |
| US4645733A (en) * | 1983-11-10 | 1987-02-24 | Sullivan Donald F | High resolution printed circuits formed in photopolymer pattern indentations overlaying printed wiring board substrates |
| GB2233820A (en) * | 1989-06-26 | 1991-01-16 | Philips Nv | Providing an electrode on a semiconductor device |
| US5716663A (en) * | 1990-02-09 | 1998-02-10 | Toranaga Technologies | Multilayer printed circuit |
| KR0155877B1 (ko) * | 1995-09-12 | 1998-12-15 | 이대원 | 다층 회로기판 및 그 제조방법 |
| DE69737328T2 (de) * | 1997-02-20 | 2007-11-22 | Partnerships Ltd., Inc. | Niedertemperaturverfahren und zusammensetzungen zur herstellung elektischer leiter |
| US6379745B1 (en) * | 1997-02-20 | 2002-04-30 | Parelec, Inc. | Low temperature method and compositions for producing electrical conductors |
| US20030108664A1 (en) * | 2001-10-05 | 2003-06-12 | Kodas Toivo T. | Methods and compositions for the formation of recessed electrical features on a substrate |
-
2003
- 2003-10-22 GB GBGB0324561.0A patent/GB0324561D0/en not_active Ceased
-
2004
- 2004-10-15 EP EP04770264A patent/EP1678991A1/en not_active Withdrawn
- 2004-10-15 CN CNA2004800310835A patent/CN1871883A/zh active Pending
- 2004-10-15 JP JP2006536237A patent/JP2007510290A/ja active Pending
- 2004-10-15 US US10/576,316 patent/US20070059939A1/en not_active Abandoned
- 2004-10-15 WO PCT/IB2004/052105 patent/WO2005041626A1/en not_active Application Discontinuation
- 2004-10-15 KR KR1020067007507A patent/KR20060089251A/ko not_active Application Discontinuation
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105633094A (zh) * | 2015-12-30 | 2016-06-01 | 昆山国显光电有限公司 | 一种有机发光显示装置及其制备方法 |
| CN105633094B (zh) * | 2015-12-30 | 2018-12-18 | 昆山国显光电有限公司 | 一种有机发光显示装置及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200527597A (en) | 2005-08-16 |
| GB0324561D0 (en) | 2003-11-26 |
| US20070059939A1 (en) | 2007-03-15 |
| JP2007510290A (ja) | 2007-04-19 |
| KR20060089251A (ko) | 2006-08-08 |
| EP1678991A1 (en) | 2006-07-12 |
| WO2005041626A1 (en) | 2005-05-06 |
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