CN1865530A - 区熔气相掺杂太阳能电池硅单晶的生产方法 - Google Patents
区熔气相掺杂太阳能电池硅单晶的生产方法 Download PDFInfo
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- CN1865530A CN1865530A CNA2006100135343A CN200610013534A CN1865530A CN 1865530 A CN1865530 A CN 1865530A CN A2006100135343 A CNA2006100135343 A CN A2006100135343A CN 200610013534 A CN200610013534 A CN 200610013534A CN 1865530 A CN1865530 A CN 1865530A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 title claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 38
- 229910052710 silicon Inorganic materials 0.000 title claims description 38
- 239000010703 silicon Substances 0.000 title claims description 38
- 239000007789 gas Substances 0.000 claims abstract description 102
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052786 argon Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 47
- 238000012423 maintenance Methods 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 238000010899 nucleation Methods 0.000 claims description 11
- 238000007664 blowing Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 229910000085 borane Inorganic materials 0.000 claims description 9
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 238000005273 aeration Methods 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 238000004857 zone melting Methods 0.000 abstract 2
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 238000011161 development Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
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CNB2006100135343A CN1325702C (zh) | 2006-04-26 | 2006-04-26 | 区熔气相掺杂太阳能电池硅单晶的生产方法 |
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CNB2006100135343A CN1325702C (zh) | 2006-04-26 | 2006-04-26 | 区熔气相掺杂太阳能电池硅单晶的生产方法 |
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CN1865530A true CN1865530A (zh) | 2006-11-22 |
CN1325702C CN1325702C (zh) | 2007-07-11 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008067700A1 (fr) * | 2006-12-06 | 2008-06-12 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Monocristal de silicium exempt de dislocation, son procédé de fabrication et un dispositif de chauffage en graphite utilisé |
WO2008128378A1 (fr) * | 2007-04-19 | 2008-10-30 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Procédé à traction verticale et à fusion de zones pour produire du silicium monocristallin |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
CN101525764B (zh) * | 2009-04-16 | 2010-12-08 | 峨嵋半导体材料研究所 | 一种真空区熔高阻硅单晶的制备方法 |
CN102304757A (zh) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸p型太阳能硅单晶的方法 |
CN103403231A (zh) * | 2011-02-23 | 2013-11-20 | 信越半导体股份有限公司 | N型单晶硅的制造方法及掺磷n型单晶硅 |
CN103451718A (zh) * | 2013-09-05 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 可连续生产的区熔炉装置及其工艺控制方法 |
CN104711664A (zh) * | 2013-12-16 | 2015-06-17 | 有研新材料股份有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN106894083A (zh) * | 2015-12-07 | 2017-06-27 | 胜高股份有限公司 | 单晶硅的制造方法 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
CN110318096A (zh) * | 2019-06-28 | 2019-10-11 | 北京天能运通晶体技术有限公司 | 区熔硅单晶收尾方法和拉制方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1542868A (en) * | 1975-11-14 | 1979-03-28 | Siemens Ag | Production of phosphorus-doped monocrystalline silicon rods |
CN1008452B (zh) * | 1985-04-01 | 1990-06-20 | 北京科技大学 | 制备单晶硅片表面完整层的新途径 |
CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
CN1254565C (zh) * | 2002-12-30 | 2006-05-03 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1292101C (zh) * | 2005-06-15 | 2006-12-27 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶制备方法 |
-
2006
- 2006-04-26 CN CNB2006100135343A patent/CN1325702C/zh active Active
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008067700A1 (fr) * | 2006-12-06 | 2008-06-12 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Monocristal de silicium exempt de dislocation, son procédé de fabrication et un dispositif de chauffage en graphite utilisé |
WO2008128378A1 (fr) * | 2007-04-19 | 2008-10-30 | Tianjin Huanou Semiconductor Material And Technology Co., Ltd. | Procédé à traction verticale et à fusion de zones pour produire du silicium monocristallin |
CN101525764B (zh) * | 2009-04-16 | 2010-12-08 | 峨嵋半导体材料研究所 | 一种真空区熔高阻硅单晶的制备方法 |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
EP2679706A4 (en) * | 2011-02-23 | 2014-10-01 | Shinetsu Handotai Kk | PROCESS FOR THE PRODUCTION OF N-TYPE SILICON MONOCRYSTAL AND N-TYPE DOPED SILICON MONOCRYSTAL MONOCRYSTAL |
CN103403231A (zh) * | 2011-02-23 | 2013-11-20 | 信越半导体股份有限公司 | N型单晶硅的制造方法及掺磷n型单晶硅 |
CN103403231B (zh) * | 2011-02-23 | 2016-04-20 | 信越半导体股份有限公司 | N型单晶硅的制造方法及掺磷n型单晶硅 |
EP2679706A1 (en) * | 2011-02-23 | 2014-01-01 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing n-type silicon single crystal, and phosphorus-doped n-type silicon single crystal |
CN102304757A (zh) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸p型太阳能硅单晶的方法 |
CN103451718A (zh) * | 2013-09-05 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 可连续生产的区熔炉装置及其工艺控制方法 |
CN103451718B (zh) * | 2013-09-05 | 2016-08-17 | 浙江晶盛机电股份有限公司 | 可连续生产的区熔炉装置及其工艺控制方法 |
CN104711664A (zh) * | 2013-12-16 | 2015-06-17 | 有研新材料股份有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN104711664B (zh) * | 2013-12-16 | 2017-09-22 | 有研半导体材料有限公司 | 一种提高大直径区熔硅单晶生产质量的方法 |
CN106894083A (zh) * | 2015-12-07 | 2017-06-27 | 胜高股份有限公司 | 单晶硅的制造方法 |
CN106894083B (zh) * | 2015-12-07 | 2019-08-06 | 胜高股份有限公司 | 单晶硅的制造方法 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
CN110318096A (zh) * | 2019-06-28 | 2019-10-11 | 北京天能运通晶体技术有限公司 | 区熔硅单晶收尾方法和拉制方法 |
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Publication number | Publication date |
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CN1325702C (zh) | 2007-07-11 |
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Effective date of registration: 20191226 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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