CN1849182A - 用过饱和清洁溶液进行强超声波清洁 - Google Patents
用过饱和清洁溶液进行强超声波清洁 Download PDFInfo
- Publication number
- CN1849182A CN1849182A CNA2004800205237A CN200480020523A CN1849182A CN 1849182 A CN1849182 A CN 1849182A CN A2004800205237 A CNA2004800205237 A CN A2004800205237A CN 200480020523 A CN200480020523 A CN 200480020523A CN 1849182 A CN1849182 A CN 1849182A
- Authority
- CN
- China
- Prior art keywords
- solution
- gas
- substrate
- dissolved
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 56
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 19
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 96
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000012528 membrane Substances 0.000 claims description 22
- 229920006395 saturated elastomer Polymers 0.000 claims description 18
- 230000000994 depressogenic effect Effects 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000003125 aqueous solvent Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000013459 approach Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 230000006378 damage Effects 0.000 abstract description 7
- 239000000243 solution Substances 0.000 description 107
- 235000012431 wafers Nutrition 0.000 description 82
- 239000000523 sample Substances 0.000 description 36
- 238000007654 immersion Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 239000012530 fluid Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021397 glassy carbon Inorganic materials 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000881 depressing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47760203P | 2003-06-11 | 2003-06-11 | |
US60/477,602 | 2003-06-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1849182A true CN1849182A (zh) | 2006-10-18 |
Family
ID=34061915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800205237A Pending CN1849182A (zh) | 2003-06-11 | 2004-06-10 | 用过饱和清洁溶液进行强超声波清洁 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1631396A4 (enrdf_load_stackoverflow) |
JP (1) | JP4643582B2 (enrdf_load_stackoverflow) |
KR (1) | KR101110905B1 (enrdf_load_stackoverflow) |
CN (1) | CN1849182A (enrdf_load_stackoverflow) |
TW (1) | TWI330552B (enrdf_load_stackoverflow) |
WO (1) | WO2005006396A2 (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102119060A (zh) * | 2008-08-20 | 2011-07-06 | 株式会社海上 | 超声波清洗装置 |
CN102781596A (zh) * | 2010-02-25 | 2012-11-14 | 丰田自动车株式会社 | 用于诸如车辆的大型产品的微气泡清洁系统 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010108641A (ko) * | 2000-05-30 | 2001-12-08 | 강병근 | 무우를 주재로한 건강음료 및 그 제조방법 |
KR20020037177A (ko) * | 2000-11-13 | 2002-05-18 | 김용현 | 무를 첨가한 꿀음료 |
KR100827618B1 (ko) * | 2006-05-11 | 2008-05-07 | 한국기계연구원 | 세정용 초음파 장치 및 이를 이용한 초음파 세정시스템 |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
JPWO2008050832A1 (ja) * | 2006-10-27 | 2010-02-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法、プログラム、および記録媒体 |
KR100748480B1 (ko) * | 2007-06-27 | 2007-08-10 | 한국기계연구원 | 세정용 초음파 장치를 이용한 초음파 세정시스템 |
JP2014130881A (ja) * | 2012-12-28 | 2014-07-10 | Ebara Corp | 研磨装置 |
JP6678448B2 (ja) * | 2015-12-22 | 2020-04-08 | 株式会社Screenホールディングス | 基板洗浄方法および基板洗浄装置 |
WO2020095091A1 (en) * | 2018-11-06 | 2020-05-14 | Arcelormittal | Equipment improving the ultrasound cleaning |
JP7233691B2 (ja) * | 2019-03-28 | 2023-03-07 | 株式会社エアレックス | 低温物品の除染方法及びこれに使用するパスボックス |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5368054A (en) * | 1993-12-17 | 1994-11-29 | International Business Machines Corporation | Ultrasonic jet semiconductor wafer cleaning apparatus |
JPH1022246A (ja) | 1996-07-04 | 1998-01-23 | Tadahiro Omi | 洗浄方法 |
CN1163946C (zh) * | 1996-08-20 | 2004-08-25 | 奥加诺株式会社 | 清洗电子元件或其制造设备的元件的方法和装置 |
US5800626A (en) | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
US5849091A (en) | 1997-06-02 | 1998-12-15 | Micron Technology, Inc. | Megasonic cleaning methods and apparatus |
US6167891B1 (en) | 1999-05-25 | 2001-01-02 | Infineon Technologies North America Corp. | Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers |
JP3322853B2 (ja) * | 1999-08-10 | 2002-09-09 | 株式会社プレテック | 基板の乾燥装置および洗浄装置並びに乾燥方法および洗浄方法 |
US6743301B2 (en) | 1999-12-24 | 2004-06-01 | mFSI Ltd. | Substrate treatment process and apparatus |
US6684890B2 (en) | 2001-07-16 | 2004-02-03 | Verteq, Inc. | Megasonic cleaner probe system with gasified fluid |
US20030084916A1 (en) * | 2001-10-18 | 2003-05-08 | Sonia Gaaloul | Ultrasonic cleaning products comprising cleaning composition having dissolved gas |
-
2004
- 2004-06-10 WO PCT/US2004/018464 patent/WO2005006396A2/en not_active Application Discontinuation
- 2004-06-10 JP JP2006533684A patent/JP4643582B2/ja not_active Expired - Fee Related
- 2004-06-10 EP EP04776442.8A patent/EP1631396A4/en not_active Withdrawn
- 2004-06-10 CN CNA2004800205237A patent/CN1849182A/zh active Pending
- 2004-06-10 KR KR1020057023902A patent/KR101110905B1/ko not_active Expired - Lifetime
- 2004-06-11 TW TW093116958A patent/TWI330552B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102119060A (zh) * | 2008-08-20 | 2011-07-06 | 株式会社海上 | 超声波清洗装置 |
CN102119060B (zh) * | 2008-08-20 | 2014-07-16 | 株式会社海上 | 超声波清洗装置 |
CN102781596A (zh) * | 2010-02-25 | 2012-11-14 | 丰田自动车株式会社 | 用于诸如车辆的大型产品的微气泡清洁系统 |
CN102781596B (zh) * | 2010-02-25 | 2014-10-22 | 丰田自动车株式会社 | 用于诸如车辆的大型产品的微气泡清洁系统 |
Also Published As
Publication number | Publication date |
---|---|
JP2007502032A (ja) | 2007-02-01 |
EP1631396A2 (en) | 2006-03-08 |
KR20060037270A (ko) | 2006-05-03 |
TWI330552B (en) | 2010-09-21 |
JP4643582B2 (ja) | 2011-03-02 |
EP1631396A4 (en) | 2013-08-14 |
WO2005006396A2 (en) | 2005-01-20 |
WO2005006396A3 (en) | 2005-09-15 |
TW200507954A (en) | 2005-03-01 |
KR101110905B1 (ko) | 2012-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20061018 |