CN1849182A - Megasonic cleaning using supersaturated cleaning solution - Google Patents
Megasonic cleaning using supersaturated cleaning solution Download PDFInfo
- Publication number
- CN1849182A CN1849182A CNA2004800205237A CN200480020523A CN1849182A CN 1849182 A CN1849182 A CN 1849182A CN A2004800205237 A CNA2004800205237 A CN A2004800205237A CN 200480020523 A CN200480020523 A CN 200480020523A CN 1849182 A CN1849182 A CN 1849182A
- Authority
- CN
- China
- Prior art keywords
- solution
- gas
- substrate
- dissolved
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
A method and system for the megasonic cleaning of one or more substrates that reduces damage to the substrate(s) resulting from the megasonic energy. The substrates are supported in a process chamber and contacted with a cleaning solution comprising a cleaning liquid having carbon dioxide gas dissolved in the cleaning liquid in such amounts that the carbon dioxide gas is at a supersaturated concentration for the conditions within the process chamber. Megasonic energy is then transmitted to the substrate. The cleaning solution provides protection from damage resulting from the application of megasonic/acoustical energy. In another aspect, the invention is a system for carrying out the method. The invention is not limited to carbon dioxide but can be used in conjunction with any gas that, when so dissolved in a cleaning liquid, protects substrates from being damaged by the application of megasonic/acoustical energy.
Description
The cross reference of related application
The application requires in the priority of the U.S. Provisional Application 60/477602 of submission on June 11st, 2003, and it is incorporated in this by reference in full.
Technical field
The present invention relates generally to be used for the method, apparatus and system of substrate processing/manufacturing, be specifically related to utilize add the method, apparatus and system that intense ultrasonic wave (megasonic) energy comes clean semiconductor wafer.
Background technology
In semi-conductive manufacturing, semiconductor devices produces being called on the thin rounded flakes shape object of wafer.In general, each wafer contains a plurality of semiconductor devices.Since industrialization begins so far, all recognize the importance that farthest reduces in the production process the pollution of these wafer surface always.In addition, the more and more miniaturization and the complicated because needs of end product become along with semiconductor devices, the requirement of cleaning become strict more.This is caused by two reasons.
The first, more and more littler because device becomes, the points of contamination on the wafer will occupy bigger percentage in device surface is long-pending.This has increased the possibility of component failure.Therefore, in order to keep the acceptable output level of normal function device on each wafer, the cleaning that must implement and realize requires to have improved.
The second, because becoming, device becomes increasingly complex, make that the required raw material of these devices, time, equipment and procedure of processing also become more complicated, price is higher.The result makes and makes the required cost increase of each wafer.In order to keep acceptable income level, for manufacturer, must improve the number of the normal function device on each wafer.A kind of method that improves this output is the number that reduces owing to polluting the device that lost efficacy.Like this, just expectation improves the cleannes requirement.
The industrial method that improves the cleannes of wafer in process is that megasonic energy is introduced on the surface to wafer in cleaning.Quoting megasonic energy can improve in cleaning from the get on ability of particle-removing of semiconductor devices.But, have found that applied megasonic energy also can be destroyed the semiconductor devices that is cleaned.Be used in the composition of the clean solution in the intense ultrasonic wave cleaning course, comprise any amount and composition that is dissolved in the gas in the clean solution, can influence the efficient of cleaning and the destructiveness that wafer is caused.According to the instruction of prior art, the solution that contains the gas of supersaturation content is unfavorable for being used in the cleaning course of wafer.
For example, according to the instruction of United States Patent (USP) the 5800626th (" 626 patent ") number, clean solution should fractional saturation, for example uses the gas of 60-98%, so that realize best cleaning effect.According to the instruction of ' 626 patents, in order to keep clean-up performance preferably, lower limit of saturation 60% is desired.Also having instructed in ' 626 patents has too many gas can cause the defective of silicon face in the solution.Therefore, the saturation degree of clean solution should not surpass 98%.
According to the instruction of United States Patent (USP) No. 6167891 (" 891 patent "), 100% saturated solution provides best cleaning efficiency.According to ' 891 patents, unsaturated solution and supersaturated solution cleaning efficiency obviously descend.' 891 patents are with the relatively poor formation that is attributed to bubble excessive in the solution of cleaning efficiency under the supersaturated condition, and these bubbles have just absorbed it before megasonic energy arrives wafer surface.' 891 patents are also instructed: for the clean solution of heating, then solution must carry out earlier partly degassed at low temperatures and handles before being heated, and occurred supersaturation when avoiding the temperature rising.
According to the instruction of United States Patent (USP) the 5849091st (" 091 patent "), the air/liquid interface on cover wafers surface is vital for strengthening cleaning.But it is that gas directly is injected in the clean solution on cover wafers surface that the inventor of patent ' 091 has instructed the best way that forms air/liquid interface.
According to the instruction of United States Patent (USP) the 6039814th (" 814 patent "), the minute bubbles in the clean solution can be blocked the transmission of sound wave, thereby cause the decline of cleaning efficiency.' 814 patents have also instructed bubble can produce defective on wafer surface.The source of bubble is the gas that is dissolved in the clean solution.Therefore, according to the instruction of ' 814 patents, dissolved gases concentration should be lower than 5ppm at least in the clean solution, preferably is lower than 3ppm.
Summary of the invention
Therefore, the method and system that the purpose of this invention is to provide a kind of cleaning substrate.
Another object of the present invention provides a kind of cleaning substrate and reduces and/or eliminate simultaneously the method and system of the destruction that is caused by acoustic energy again.
And another object of the present invention provides and a kind ofly comes the method and system of cleaning substrate with megasonic energy, and its substrate can be used for comprising the responsive lines and the groove structure of polysilicon, metal or dielectric substance.
Another object of the present invention provides a kind of cleaning substrate and improves the method and system that can operate yield of semiconductor devices on each wafer simultaneously again.
These purposes and other purpose can realize by the present invention, one aspect of the present invention is the method for at least one substrate of cleaning, it comprises: (a) substrate is placed in the operating room, this operating room has one and is in the gaseous environment that first temperature, its first gas are in first dividing potential drop; (b) solution is infeeded in this operating room, so that solution contacts with substrate, this solution comprises a cleaning solution and with in this first temperature and depressed oversaturated concentration in first minute and be dissolved in first gas in the cleaning solution; And (c) at described substrate with when solution contacts, acoustic energy is applied on the substrate with cleaning substrate.
First gas preferably can protect substrate not by the gas that acoustic energy destroyed, such as carbon dioxide.Cleaning solution can be conventional semiconductor solution, such as deionized water, RCA solution, diluted acid, diluted alkaline or half aqueous solvent (semi-aqueous solvent).Further preferably also comprise the solution that is dissolved in second gas in the cleaning solution, this gas is wanted to promote from the substrate particle-removing that gets on, such as nitrogen (N
2), oxygen, helium and argon gas.Branch for the temperature in the operating room and second gas is depressed, and the amount that second gas is dissolved in the cleaning solution can be also can not be the amount that reaches supersaturation concentration.
One preferred embodiment in, first gas is carbon dioxide, liquid is deionized water.Solution can pass through in the environment beyond the operating room CO
2Be dissolved in the deionized water and produce, such as in membrane contactor.Among this embodiment, at CO
2Be dissolved in the process in the deionized water, the gaseous environment in the membrane contactor preferably remains on such temperature and CO
2Dividing potential drop is depressed in this temperature and branch, is dissolved into the CO in the deionized water in membrane contactor
2Amount be to be equal to or less than the required amount of the concentration that reaches capacity for temperature in the membrane contactor and dividing potential drop.The amount that is dissolved in the carbon dioxide in the liquid can be in the scope of 50ppm to 2000ppm, and is most preferred at about 1000ppm.
Though be dissolved in the CO in the deionized water
2Amount with respect to the CO in the membrane contactor
2Dividing potential drop and temperature are equal to or less than the required amount of the concentration that reaches capacity, and are dissolved in the CO in the deionized water
2This amount for the CO in the operating room
2Dividing potential drop and temperature are in hypersaturated state.
In case after in membrane contactor, generating required concentration, solution is infeeded in the operating room, so that it contacts with one or more substrates to be cleaned.Because CO in the solution
2The dividing potential drop of amount gaseous environment in operating room and temperature under be oversaturated, CO
2Have from solution and to overflow and enter trend in the operating room atmosphere.Therefore, preferably abundant CO is being arranged
2From solution, overflow and cause being dissolved in CO in the deionized water
2Concentration is reduced to temperature and the CO in this operating room
2Divide and depress, finish the step of Burning in Effect of Sound Energy in substrate to before the saturated concentration.
Preferred operating room environment is to comprise air or N
2Gaseous environment, and be under room temperature and the atmospheric pressure.The acoustic energy that more preferably acts on substrate is megasonic energy, and substrate is a semiconductor wafer.
Further preferably acoustic energy is by on solution transmission and the arrival substrate.Because CO
2Protective effect, method of the present invention can be used to applied megasonic energy in the cleaning of semiconductor wafer, and has only minimal destruction to containing the responsive lines that comprise polysilicon, metal or dielectric substance and the wafer of groove structure.
Method of the present invention also can be used to cleaning substrate in non-immersion type and immersion type operating room, and can be used in single substrate processing and the processing of batch substrate.In being used in non-immersion type operating room, the direction that substrate can basic horizontal supports.In this embodiment, preferably solution is fed in the operating room, thereby at least one surface of substrate, forms solution layer.Preferably acoustic energy is arrived on the substrate by the solution transmission then.As a comparison, when using the immersion type operating room, substrate will be immersed in the solution.
On the other hand, the present invention is the method for at least one semiconductor wafer of cleaning, and it comprises: (a) place a semiconductor wafer in an operating room; (b) solution is fed in the operating room, so that solution contacts with substrate, this solution comprises cleaning solution and first and second gases that are dissolved in the cleaning solution, wherein, first gas helps from the wafer particle-removing that gets on, and second gas is used for protecting wafer so that it avoids being destroyed by acoustic energy; And (c) acoustic energy is arrived on the wafer, with clean wafer by solution effects.
Aspect another, the present invention is the system that is used for cleaning at least one substrate, and it comprises: an operating room, this operating room have and are in the gaseous environment that first temperature, first gas are in first dividing potential drop; In operating room, be used for supporting the support of at least one substrate; Thereby be used for first gas with in this first temperature with depressed oversaturated concentration in first minute and be dissolved in the device that cleaning solution forms solution; Thereby be used for solution is infeeded the contacted device of substrate that operating room supports solution and support; Be used for acoustic energy is transferred to the on-chip sonic energy source that support supports; And one when the controller that substrate is on the support, solution is suitable for activating sonic energy source when being fed to and having contacted in the operating room and with substrate, acoustic energy have the first abundant gas from solution, to overflow and make the concentration that is dissolved in first gas in the liquid be reduced in this first temperature and before depressing to saturated concentration in first minute by solution and arrive on the substrate.
Description of drawings
Fig. 1 is the schematic diagram according to the intense ultrasonic wave cleaning systems of embodiment of the present invention.
Fig. 2 is the left view according to a wafer megasonic cleaning equipment of non-immersion type of embodiment of the present invention.
Fig. 3 is the left pseudosection of equipment shown in Figure 2.
Fig. 4 A has the intense ultrasonic wave clean method cleaning that adopts prior art and the micrograph of the semiconductor wafer surface of ruined etching lines.
Fig. 4 B is the micrograph with employing semiconductor wafer surface of not ruined etching lines according to the embodiments of the present invention cleaning.
The specific embodiment
The embodiment of described intense ultrasonic wave clean method of the present invention has several aspects, and any one independent aspect all can not independently obtain required effect.The scope to appended this method that claim limited is not limited, and more outstanding feature of the present invention will be discussed below.
By applied megasonic energy semiconductor wafer is cleaned effectively, the concentration that need be dissolved in the gas in the clean solution is suitable.But, with prior art instruct opposite, use the oversaturated clean solution of concentration of dissolved gas wherein can access best cleaning effect, can not damage again simultaneously wafer.Described method of the present invention all is effective for using immersion type or non-immersion type clean technologies to come clean wafer.One or more wafers to be cleaned can be immersed in the clean solution, perhaps alternatively, by the method that applies and so on on the form paint wafer surface of clean solution with film.
With reference to figure 1, the intense ultrasonic wave cleaning systems 10 of foundation embodiments of the present invention are described.Intense ultrasonic wave cleaning systems 10 comprise CO
2Gas source 20, nitrogen (N
2) source 30, cleaning solution source 40, membrane contactor 50, operating room 60 and megasonic energy source 70.When the bottom of megasonic energy source 70 and operating room 60 mutually during the coupling connection, the present invention does not limit any concrete direction of megasonic energy source 70 with respect to operating room 60, as long as the semiconductor wafer (not shown) that megasonic energy source 60 can be supported in operating room 60 provides megasonic energy.
Using intense ultrasonic wave cleaning systems 10 to come in the clean semiconductor wafer according to embodiments of the present invention, cleaning solution as the semiconductor solution that comprises deionized water, RCA solution, diluted acid, diluted alkaline or half aqueous solvent commonly used and so at first flows out from cleaning solution source 40, and flows to membrane contactor along pipeline 41.Other cleaning solution is also in the present invention available, includes but not limited to the RCA cleaning fluid.Simultaneously, CO
2Produce CO in the gas source 20
2Gas, and flow to membrane contactor 50, N along pipeline 21
2Produce N in the gas source 30
2Gas, and flow to membrane contactor 50 along pipeline 31.The effect of membrane contactor 50 is to make CO
2Gas and N
2Gas is dissolved in the cleaning solution, forms clean solution.Should be noted that, though the present invention has specifically described CO
2And N
2Be dissolved in the cleaning solution, but the present invention is not limited to this.A kind of class gas that preferably can assist in removing particle in the gas is such as nitrogen (N
2), oxygen (O
2), helium (He), argon gas (Ar) and other gas.Other gas preferably can protect the semiconductor wafer can be because of being exposed in the acoustic energy and a ruined class gas.The preferred example of this type of gas is CO
2And, though can use membrane contactor that gas is dissolved in the cleaning solution, also can use other gas can be dissolved in known method and equipment in the liquid.
At CO
2And N
2When gas is dissolved in the cleaning solution, keeping all controlled gaseous environment of temperature and pressure in the membrane contactor 50.
Temperature and CO to the gaseous environment in the membrane contactor 50
2And N
2Dividing potential drop controlled so that in membrane contactor 50 than the CO that under the gaseous environment that operating room 60 is kept, is dissolved in the cleaning solution
2Gas and N
2It is many that gas is wanted.Like this, in membrane contactor 50, be dissolved in CO in the cleaning solution
2And N
2Amount when being equal to or less than the pairing saturated concentration of the temperature and pressure of gaseous environments in the membrane contactor 50, be dissolved in the CO in the cleaning solution
2And N
2Amount surpass the temperature and the pairing saturated concentration of dividing potential drop of gaseous environments in the operating room 60.
For example, considering only to contain in the gaseous environment of membrane contactor 50 volume ratio is 1: 1 N
2And CO
2, and only contain air in the gaseous environment of operating room 60.Suppose that two kinds of gaseous environments all are atmospheric pressure and room temperature, CO in the gaseous environment of membrane contactor 50
2The gaseous environment of intrinsic standoff ratio operating room 60 in CO
2The dividing potential drop height.Therefore, under poised state, be exposed to the CO in the cleaning solution of being dissolved in the gaseous environment of membrane contactor 50
2Concentration will be exposed on the CO in the cleaning solution of being dissolved in the gaseous environment of operating room 60
2The concentration height.N for dissolving
2It also is identical principle.
CO at aequum
2And N
2Gas is dissolved in the cleaning solution, after forming required clean solution, clean solution 51 is introduced in the operating room 60 by the road.After entering operating room 60, clean solution contacts with the wafer that is fixed therein (or a plurality of wafer).It is that atmospheric pressure, temperature are the gas of room temperature that operating room 60 preferably contains pressure.Therefore, when clean solution arrives operating room 60, be dissolved in one or more dissolved gases (that is CO, in the clean solution
2Gas or N
2Gas) concentration substantially exceeds saturated concentration.Like this, surpass the temperature of gaseous environment in the operating room 60 and the dissolved gas of the pairing saturated concentration of each dividing potential drop the trend of overflowing from cleaning solution is arranged.But wafer process/cleaning (as mentioned below) is preferably overflowed from cleaning solution and is made at abundant gas and carries out before the amount of gas comes back to saturated concentration in the cleaning solution.
One preferred embodiment in, CO in the cleaning solution
2Concentration be 1000ppm, this is than CO in the air under atmospheric pressure and the room temperature
2Saturated concentration big 1000 times.Experiment shows the CO of this concentration
2Can produce very effective cleaning effect, and wafer be damaged being used in combination Shi Buhui simultaneously with applied megasonic energy.
In case clean solution enters operating room 60, and with after semiconductor wafer (or a plurality of wafer) in the operating room 60 contacts, megasonic energy source 70 promptly is activated.The type that depends on the operating room that is adopted, one or more semiconductor wafers can be immersed in the clean solution, perhaps, and under the situation of using a wafer operating room, can be with on the one or more clean chip of one deck clean solution paint surface.The present invention does not limit the particular type of operating room.In addition, do not limit any concrete shape and/or the direction of megasonic energy source yet.For example, megasonic energy source can be clavate, leg-of-mutton or other shape dish type, long.The present invention even can combine use with the application of sonic energy of ultra violet applications and other form.
In case be activated, produce megasonic energy source 70 and transmit intense ultrasonic wave acoustic energy, pass clean solution and arrive semiconductor wafer (or a plurality of wafer) to be cleaned.Be dissolved in the CO in the clean solution
2(with or N
2) effect be saturated wafer, its megasonic energy of avoiding being transferred to wafer surface is destroyed.As a result, megasonic energy can for example with after comprising polysilicon, metal or dielectric material etching lines or groove, affact on the semiconductor wafer in cleaning after wafer has sensitiveness.
By comparison diagram 4A and Fig. 4 B, the CO that uses the supersaturation amount has been described
2As a kind of advantage that is dissolved in the gas in the clean solution.Fig. 4 A and Fig. 4 B have represented the destructurized degree of responsive lines that arrives with microscopic examination.The clean solution that is to use the air with saturated concentration that Fig. 4 A represents is to destruction that wafer caused.Though the efficient of cleaning is approximately 99%, wafer is destroyed significantly.What Fig. 4 B represented is to use the CO with supersaturation concentration according to embodiments of the present invention
2Clean solution to destruction that wafer caused.Cleaning efficiency still is about 99%, and is destroyed but wafer does not have.In the process of the clean wafer shown in Fig. 4 A and the 4B, megasonic conditions is identical, and different is the concentration of dissolved gas, and clean solution also is identical.
As discussed above, the present invention can combine enforcement with various types of operating rooms, comprises wafer operating room or discontinuous operating room and/or immersion type operating room or non-immersion type operating room.In order to illustrate, the non-immersion type operating room of wafer will be discussed one time, should be appreciated that principle of the present invention is equally applicable to discontinuous type immersion working groove.
Fig. 2 has shown the made non-immersion type megasonic energy of the wafer cleaning equipment 101 according to the present invention.The clean solution of generation as shown in Figure 1 flows to wafer 106 through fluid issuing 214, forms skim on wafer surface.Perhaps, on also can bottom surface with clean solution paint wafer 106.Fluid issuing 214 can be associated in by the fluid line coupling with fluid circuit 51 (Fig. 1).Megasonic energy cleaning equipment 101 comprises an elongated probe 104 of passing wall 100 insertions of working groove 101.Working groove 101 forms an operating room, and wafer 106 can be processed therein according to the present invention.As shown in the figure, probe 104 is fixed on the outside of container 101 1 sides.An O type circle 102 that is suitable for being clipped in as sandwich structure between probe 104 and the cell wall 100 provides suitable seal for working groove 101.
One is included on acoustics and mechanically coupling connection of heat exchange elements 134 and probe 104 in the chamber 120.Also comprise piezoelectric transducer 140 in the chamber 120 with heat exchange elements 134 coupling connection on acoustics.Fixator 141 and electric connector 142,154 and 126 are connected between transducer 140 and the sonic energy source (not shown).The inlet tube 124 of a cooling agent and the outlet 122 of a cooling agent are being fixed in chamber 120, and an opening is arranged on electric connector 154 and 126.Chamber 120 is by 118 closures of annular disk that have opening 132, and opening 132 places are probes 104.Dish 118 is connected with groove 101 successively, and in working groove 101, brace table or pedestal 108 are parallel with probe 104, and near probe.Pedestal 108 can be a various forms, and shown arrangement comprises a wheel rim 108a who is supported by a plurality of spoke 108b, spoke 108b be supported on the center 108c of axle on 110 and be connected, axle 110 extends through the diapire of working groove 101.In groove 101 outsides, axle 110 links to each other with motor 112.
Elongated probe 104 preferably by relative inertness, do not have contaminated materials such as quartz made, it is used for transmitting effectively acoustic energy.Though use quartz probe can satisfy the needs of most of clean solution, the clean solution that contains hydrofluoric acid can the etching quartz.Therefore, graphite or the made probe of other suitable material by sapphire diamond dust, boron nitride, vitreous carbon, vitreous carbon coating also can be used for replacing quartzy.And quartz can adopt the material coating that can resist HF, such as diamond dust or vitreous carbon.
That probe 104 comprises is solid-state, lengthening, slender type or sonde-type cleaning part 104a and pedestal or afterbody 104b.The cross section of probe 104 can be circular, and preferably the diameter of its cleaning part 104a less than the diameter of afterbody 104b.One preferred embodiment in, the area of the end face of afterbody 104b is 25 times of area of the sharp face of 104a part.But cylindrical bar that desired diameter is less or cleaning part 104a are used for concentrating the intense ultrasonic wave energy along probe 104a length direction.But the diameter of excellent 104a should enough bear the mechanical oscillation that caused by the intense ultrasonic wave the subject of knowledge and the object of knowledge through probe transmission.Preferably, the radius of excellent 104a should be equal to or less than the wavelength of the energy frequency that acts on it.This structure produces required constant surface wave behavior, direct energy radially into liquid that probe contacts in.In fact, on the long locus of rod, the diameter of rod has very small expansion and dwindles.One preferred embodiment in, the radius of excellent 104a is approximately 0.2 inch, is about at wavelength under 0.28 inch the situation to move.This structure makes along the direction per inch of probe length and produces 3-4 wavelength.
Preferably, probe cleaning part 104a long enough is so that the whole surface of wafer 106 is exposed in the probe 104 in the process of chip cleaning.One preferred embodiment in because wafer 106 rotates below probe 104, so the length of cleaning part 104b preferably is enough to make it to arrive the core of wafer 106 at least.Therefore, when wafer 106 rotated below probe 104, the whole surface of wafer 106 can both be by the below of probe 104.Probe 104 is even without the center that arrives wafer 106, and it also might obtain gratifying effect, and this is because the megasonic vibration of probe pinpoint can provide some stirrings to center wafer.The length of probe 104 also can be decided by the numerical value of required wavelength.Usually, probe length changes along with the value added of the wavelength of the energy that puts on probe 104.Preferably, probe cleaning part 104a per inch comprises the wavelength of three to four energy that apply.In this embodiment, probe cleaning part 104a equates divided by the resulting numerical value of a number between three to four in the length of inch and required wavelength.Because therefore the variation of transducer needs to regulate transducer 140 to obtain required wavelength, it is worked under the most effective state.
The probe afterbody 104b that is positioned at groove 101 outsides opens, and its diameter is bigger than the diameter of cleaning part 104a, and in the embodiment shown in Fig. 2-3, the diameter of probe afterbody slowly increases up to touching column type cross section 104.The surface area of tail end 104d is big, helps can transmitting in a large number of ultrasonic energy, and these energy concentrate among the less part 104a of diameter subsequently.
In use, clean solution (mode as shown in Figure 1 produces) sprays from nozzle 214, sprays on the upper surface of wafer, makes probe 104 have acoustic energy simultaneously.Except spraying to clean solution on the wafer 106 from nozzle, another kind of optionally mode is to make in the groove 101 to fill with clean solution.In the method for spraying, liquid forms meniscus 216 between the upper surface than lower part and contiguous rotation wafer 106 of probe 104.Meniscus 216 wet probe cross section than lower part.By the size of the cambered surface that wetted portions limited in cross section according to the character of using the liquid in clean solution, the vertical range that is used to build between the low limit of probe 104 materials and wafer 106 and probe 104 changes.
Clean solution provides a kind of medium, is transferred on the wafer surface by the megasonic energy in this medium probe 104, to get rid of particle.Spin rinse by continuous mobile sprinkling and wafer 106 falls the particle that these are removed.When liquid stream is cut off, can play certain desiccation by centrifugal force, clean solution is thrown out of from wafer 106 simultaneously.Perhaps, clean solution of the present invention or other cleaning medium can be applied on the face relative with the megasonic energy source present position of wafer.In this embodiment, the ultrasonic energy that preferably is applied on the wafer should have enough power, described relative face that also can clean wafer.
As mentioned above, the step of applied megasonic energy processing/clean wafer will be at abundant CO
2And/or N
2Gas is overflowed from clean solution and the amount of these gases in clean solution is carried out before getting back to saturated concentration.Be dissolved in the CO in the clean solution
2(and/or N
2) be in supersaturation concentration, be to want clean chip in order to protect, its megasonic energy that can not be transferred to wafer surface is destroyed.All functions are all by finishing through the processor/controller of suitably programming.
Though the present invention has carried out abundant detailed description and explanation, make those skilled in the art can easier make and use the present invention, various do not deviate from the spirit and scope of the present invention to substitute, revise and improve also should be conspicuous.Especially, the present invention is not subject to two kinds of gases and is introduced in the clean liquid, and to have only a kind of gas be to be dissolved in embodiment in the cleaning solution with oversaturated concentration with respect to the environment in the operating room but the present invention comprises.And other gas also can be present in the cleaning solution, and/or cleaning solution is the mixing of liquid.
Claims (33)
- One kind the cleaning at least one substrate method, it comprises:(a) substrate is placed on one and has in the operating room of gaseous environment, this gaseous environment has first dividing potential drop of first temperature and first gas;(b) solution is infeeded in the described operating room, so that solution contacts with substrate, described solution comprises cleaning solution and with in described first temperature with depressed oversaturated concentration in first minute and be dissolved in first gas in the described cleaning solution;(c) at described substrate with when solution contacts, acoustic energy is applied on the substrate with cleaning substrate.
- 2. the method for claim 1, it is characterized in that,, thereby reduced the concentration that is dissolved in first gas in the cleaning solution at the first abundant gas of from solution, overflowing, make it reach before first temperature and the saturated concentration depressed in first minute completing steps (c).
- 3. the method for claim 1 is characterized in that, described first gas is carbon dioxide.
- 4. method as claimed in claim 3 is characterized in that, the supersaturation concentration of described carbon dioxide in cleaning solution is in 50ppm to 2000ppm scope.
- 5. method as claimed in claim 4 is characterized in that, the supersaturation concentration of described carbon dioxide in cleaning solution is about 1000ppm.
- 6. the method for claim 1 is characterized in that, described first gas is selected from nitrogen, oxygen, helium and argon gas.
- 7. the method for claim 1, it is characterized in that, described solution generates through the following step: provide cleaning solution under the gaseous environment of second dividing potential drop with second temperature and first gas, first gas is dissolved in the cleaning solution, and the amount that is dissolved in described first gas in the cleaning solution is equal to or less than in second temperature and second dividing potential drop and is issued to the required amount of saturated concentration.
- 8. method as claimed in claim 7 is characterized in that, described first gas is dissolved in the cleaning solution by membrane contactor.
- 9. the method for claim 1 is characterized in that, described substrate is a semiconductor wafer, and step (b)-(c) is carried out after the etching of lines that wafer comprised polysilicon, metal or dielectric substance or groove.
- 10. the method for claim 1 is characterized in that, described solution also comprises second gas that is dissolved in the cleaning solution.
- 11. method as claimed in claim 10 is characterized in that, the described first gas shield substrate is not destroyed by acoustic energy, and second gas helps from the substrate particle-removing that gets on.
- 12. method as claimed in claim 10 is characterized in that, is dissolved in the cleaning solution with oversaturated concentration under first temperature of described second gas gaseous environment in operating room and second partial pressure.
- 13. the method for claim 1 is characterized in that, described acoustic energy is the intense ultrasonic wave energy.
- 14. the method for claim 1 is characterized in that, described operating room is in or approaches atmospheric pressure.
- 15. the method for claim 1 is characterized in that, the gaseous environment in the described operating room comprises air.
- 16., it is characterized in that described wafer can substantially horizontal direction be supported in the operating room as right 1 described method.
- 17. method as claimed in claim 16 is characterized in that, solution is fed in the operating room, thereby forms one deck solution at least one surface of substrate, acoustic energy is by the solution transmission and arrive substrate.
- 18. the method for claim 1 is characterized in that, described substrate is immersed in the solution.
- 19. method as claimed in claim 18 comprises a plurality of substrates that are immersed in the solution.
- 20. method as claimed in claim 19 is characterized in that, described acoustic energy is by the solution transmission and arrive substrate.
- 21. the method for claim 1, it is characterized in that,, thereby reduced the concentration that is dissolved in first gas in the cleaning solution at the first abundant gas of from solution, overflowing, make it reach before first temperature and the saturated concentration depressed in first minute completing steps (c); Described solution generates through the following step: provide described liquid under the gaseous environment of second dividing potential drop with second temperature and first gas, first gas is dissolved in the cleaning solution, and the amount that is dissolved in described first gas in the cleaning solution is equal to or less than in second temperature and second dividing potential drop and is issued to the required amount of saturated concentration; First gas is carbon dioxide; Solution also comprises second gas that is dissolved in the cleaning solution, so that from the substrate particle-removing that gets on; Step (b)-(c) is to carry out after substrate has carried out the metal wire etching; Gaseous environment in the operating room comprises air; The pressure of the gaseous environment in the operating room is atmospheric pressure or approaches atmospheric pressure.
- 22. the method for claim 1 is characterized in that, described cleaning solution is selected from semiconductor solution commonly used, such as deionized water, RCA solution, diluted acid, diluted alkaline or half aqueous solvent.
- 23. the method for at least one semiconductor wafer of cleaning, it comprises:(a) in an operating room, place semiconductor wafer;(b) solution is fed in the described operating room, solution is contacted with substrate, described solution comprises cleaning solution and first and second gases that are dissolved in the cleaning solution, wherein, described first gas helps from the described wafer particle-removing that gets on, and described second gas is used for protecting described wafer not destroyed by acoustic energy;(c) acoustic energy is applied on the wafer with clean wafer by described solution.
- 24. method as claimed in claim 23 is characterized in that, described first gas is selected from nitrogen, oxygen, helium and argon gas.
- 25. method as claimed in claim 24 is characterized in that, described second gas is carbon dioxide.
- 26. method as claimed in claim 25 is characterized in that, described operating room comprises the gaseous environment of first dividing potential drop of first temperature and carbon dioxide, and described carbon dioxide is in first temperature and depressed with oversaturated concentration in first minute and be dissolved in the cleaning solution.
- 27. method as claimed in claim 26, it is characterized in that, described carbon dioxide is dissolved in the liquid under the environment of second dividing potential drop with second temperature and carbon dioxide, and wherein said carbon dioxide the amount in the cleaning solution of being dissolved in should make it be equal to or less than in second temperature and second dividing potential drop and be issued to the required amount of saturated concentration.
- 28. method as claimed in claim 27, it is characterized in that,, thereby reduced the concentration of carbon dioxide that is dissolved in the cleaning solution at the abundant carbon dioxide of from solution, overflowing, make it reach before first temperature and the saturated concentration depressed in first minute completing steps (c).
- 29. a system that is used to clean at least one substrate, it comprises:One has the operating room of gaseous environment, and described gaseous environment has first dividing potential drop of first temperature and first gas;Be used for supporting the support of at least one substrate at described operating room;Thereby be used for described first gas with in described first temperature with depressed oversaturated concentration in first minute and be dissolved in the device that cleaning solution forms solution;Be used for described solution is fed to described operating room so that solution and the device that is contacted by the substrate that described support supported;Be used for acoustic energy is transferred to the on-chip sonic energy source that is supported by described support;When substrate places on the described support, and described solution has been fed to the controller that is suitable for activating sonic energy source when contacting in the operating room and with substrate, described acoustic energy so that be dissolved in the concentration of first gas in the described liquid and be reduced to before described first temperature and the saturated concentration depressed in first minute, arrives substrate by solution at the first abundant gas of overflowing from described solution.
- 30. system as claimed in claim 29 is characterized in that, described first gas is carbon dioxide.
- 31. system as claimed in claim 29, it is characterized in that, the described device that is used to dissolve has the gaseous environment of second dividing potential drop of second temperature and first gas, and wherein said first gas the amount in the liquid of being dissolved in should make it be equal to or less than in second temperature and second dividing potential drop and be issued to the required amount of saturated concentration.
- 32. system as claimed in claim 29 is characterized in that, the described device that is used to dissolve is a membrane contactor.
- 33. system as claimed in claim 29 is characterized in that, described first gas is used to protect substrate and it is not destroyed by acoustic energy.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47760203P | 2003-06-11 | 2003-06-11 | |
| US60/477,602 | 2003-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1849182A true CN1849182A (en) | 2006-10-18 |
Family
ID=34061915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800205237A Pending CN1849182A (en) | 2003-06-11 | 2004-06-10 | Megasonic cleaning using supersaturated cleaning solution |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1631396A4 (en) |
| JP (1) | JP4643582B2 (en) |
| KR (1) | KR101110905B1 (en) |
| CN (1) | CN1849182A (en) |
| TW (1) | TWI330552B (en) |
| WO (1) | WO2005006396A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102119060A (en) * | 2008-08-20 | 2011-07-06 | 株式会社海上 | Ultrasonic cleaning apparatus |
| CN102781596A (en) * | 2010-02-25 | 2012-11-14 | 丰田自动车株式会社 | Microbubble cleaning system for a large product such as a vehicle |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010108641A (en) * | 2000-05-30 | 2001-12-08 | 강병근 | Healthy beverage with radish and manufacturing method thereof |
| KR20020037177A (en) * | 2000-11-13 | 2002-05-18 | 김용현 | Honey drink added radish |
| KR100827618B1 (en) * | 2006-05-11 | 2008-05-07 | 한국기계연구원 | Ultrasonic device for cleaning and ultrasonic cleaning system using the same |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| JPWO2008050832A1 (en) * | 2006-10-27 | 2010-02-25 | 東京エレクトロン株式会社 | Substrate cleaning apparatus, substrate cleaning method, program, and recording medium |
| KR100748480B1 (en) * | 2007-06-27 | 2007-08-10 | 한국기계연구원 | Ultrasonic device for cleaning and ultrasonic cleaning system using the same |
| JP2014130881A (en) * | 2012-12-28 | 2014-07-10 | Ebara Corp | Polishing device |
| JP6678448B2 (en) * | 2015-12-22 | 2020-04-08 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate cleaning method and substrate cleaning apparatus |
| WO2020095091A1 (en) * | 2018-11-06 | 2020-05-14 | Arcelormittal | Equipment improving the ultrasound cleaning |
| JP7233691B2 (en) * | 2019-03-28 | 2023-03-07 | 株式会社エアレックス | Decontamination method for low-temperature goods and pass box used for this |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5368054A (en) * | 1993-12-17 | 1994-11-29 | International Business Machines Corporation | Ultrasonic jet semiconductor wafer cleaning apparatus |
| JPH1022246A (en) | 1996-07-04 | 1998-01-23 | Tadahiro Omi | Cleaning method |
| CN1163946C (en) | 1996-08-20 | 2004-08-25 | 奥加诺株式会社 | Method and device for washing electronic parts member or like |
| US5800626A (en) | 1997-02-18 | 1998-09-01 | International Business Machines Corporation | Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates |
| US5849091A (en) | 1997-06-02 | 1998-12-15 | Micron Technology, Inc. | Megasonic cleaning methods and apparatus |
| US6167891B1 (en) | 1999-05-25 | 2001-01-02 | Infineon Technologies North America Corp. | Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers |
| JP3322853B2 (en) | 1999-08-10 | 2002-09-09 | 株式会社プレテック | Substrate drying device and cleaning device, and drying method and cleaning method |
| US6743301B2 (en) * | 1999-12-24 | 2004-06-01 | mFSI Ltd. | Substrate treatment process and apparatus |
| US6684890B2 (en) | 2001-07-16 | 2004-02-03 | Verteq, Inc. | Megasonic cleaner probe system with gasified fluid |
| US20030084916A1 (en) * | 2001-10-18 | 2003-05-08 | Sonia Gaaloul | Ultrasonic cleaning products comprising cleaning composition having dissolved gas |
-
2004
- 2004-06-10 JP JP2006533684A patent/JP4643582B2/en not_active Expired - Fee Related
- 2004-06-10 KR KR1020057023902A patent/KR101110905B1/en active IP Right Grant
- 2004-06-10 EP EP04776442.8A patent/EP1631396A4/en not_active Withdrawn
- 2004-06-10 CN CNA2004800205237A patent/CN1849182A/en active Pending
- 2004-06-10 WO PCT/US2004/018464 patent/WO2005006396A2/en not_active Application Discontinuation
- 2004-06-11 TW TW093116958A patent/TWI330552B/en active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102119060A (en) * | 2008-08-20 | 2011-07-06 | 株式会社海上 | Ultrasonic cleaning apparatus |
| CN102119060B (en) * | 2008-08-20 | 2014-07-16 | 株式会社海上 | Ultrasonic cleaning apparatus |
| CN102781596A (en) * | 2010-02-25 | 2012-11-14 | 丰田自动车株式会社 | Microbubble cleaning system for a large product such as a vehicle |
| CN102781596B (en) * | 2010-02-25 | 2014-10-22 | 丰田自动车株式会社 | Microbubble cleaning system for a large product such as a vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101110905B1 (en) | 2012-02-20 |
| TWI330552B (en) | 2010-09-21 |
| JP4643582B2 (en) | 2011-03-02 |
| EP1631396A2 (en) | 2006-03-08 |
| KR20060037270A (en) | 2006-05-03 |
| EP1631396A4 (en) | 2013-08-14 |
| JP2007502032A (en) | 2007-02-01 |
| WO2005006396A3 (en) | 2005-09-15 |
| WO2005006396A2 (en) | 2005-01-20 |
| TW200507954A (en) | 2005-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7021319B2 (en) | Assisted rinsing in a single wafer cleaning process | |
| US7578302B2 (en) | Megasonic cleaning using supersaturated solution | |
| KR100335450B1 (en) | A semiconductor device washing apparatus and a method of washing a semiconductor device | |
| US5723019A (en) | Drip chemical delivery method and apparatus | |
| EP1583136A1 (en) | Controls of ambient environment during wafer drying using proximity head | |
| JP3323310B2 (en) | Method and apparatus for cleaning various objects | |
| US20090320884A1 (en) | Controls of ambient environment during wafer drying using proximity head | |
| CN1849182A (en) | Megasonic cleaning using supersaturated cleaning solution | |
| US20060260642A1 (en) | Method and apparatus for wafer cleaning | |
| JPH1027771A (en) | Cleaning method and device | |
| US20060102198A1 (en) | Rotational thermophoretic drying | |
| JPH1116866A (en) | Method and equipment for cleaning silicon | |
| JP2002110611A (en) | Method and apparatus for cleaning semiconductor wafer | |
| KR100683275B1 (en) | Vibrating unit and megasonic cleaning apparatus comprising the same | |
| JP2002231699A (en) | Cleaning method of silicon electrode for fluorocarbon- based plasma generation, and manufacturing method of semiconductor device | |
| KR20140086838A (en) | Substrate cleaning apparatus and substrate cleaning method | |
| JPH07283182A (en) | Cleaning method of semiconductor substrate | |
| KR100694798B1 (en) | Method for cleaning the subsrtrate | |
| KR20020063201A (en) | Method of cleaning electronic device | |
| JPH0756323A (en) | Substrate cleaning device | |
| KR20080089710A (en) | Method of cleaning a semiconductor device | |
| CN101058883A (en) | Gas supply device | |
| JPH10172941A (en) | Substrate cleaning method and equipment therefor | |
| JPH0195522A (en) | Dryer | |
| JP2001035824A (en) | Method of cleaning substrate and apparatus for cleaning substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20061018 |