CN1848441A - 薄膜半导体装置及其制造方法 - Google Patents
薄膜半导体装置及其制造方法 Download PDFInfo
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- CN1848441A CN1848441A CN 200610071008 CN200610071008A CN1848441A CN 1848441 A CN1848441 A CN 1848441A CN 200610071008 CN200610071008 CN 200610071008 CN 200610071008 A CN200610071008 A CN 200610071008A CN 1848441 A CN1848441 A CN 1848441A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 38
- 239000002019 doping agent Substances 0.000 claims abstract description 31
- 230000004913 activation Effects 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 89
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 239000011521 glass Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 description 25
- 238000005755 formation reaction Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000002156 mixing Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Manipulation Of Pulses (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002263606 | 2002-09-10 | ||
JP263606/2002 | 2002-09-10 | ||
JP285780/2003 | 2003-08-04 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031584365A Division CN100426526C (zh) | 2002-09-10 | 2003-09-10 | 薄膜半导体装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1848441A true CN1848441A (zh) | 2006-10-18 |
CN100590877C CN100590877C (zh) | 2010-02-17 |
Family
ID=37077923
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610071008A Expired - Lifetime CN100590877C (zh) | 2002-09-10 | 2003-09-10 | 薄膜半导体装置及其制造方法 |
CN2008101308743A Expired - Lifetime CN101359899B (zh) | 2002-09-10 | 2003-09-10 | 薄膜半导体装置及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101308743A Expired - Lifetime CN101359899B (zh) | 2002-09-10 | 2003-09-10 | 薄膜半导体装置及其制造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5351868B2 (zh) |
CN (2) | CN100590877C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102136427A (zh) * | 2010-12-24 | 2011-07-27 | 苏州华芯微电子股份有限公司 | 有效的实现低阈值电压mos器件的方法 |
CN102656683A (zh) * | 2009-12-11 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5814967B2 (ja) * | 2013-03-21 | 2015-11-17 | 株式会社東芝 | 差動増幅器とデータ出力回路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0256799A (ja) * | 1988-08-22 | 1990-02-26 | Nippon Telegr & Teleph Corp <Ntt> | メモリ回路 |
EP0360884A1 (de) * | 1988-09-26 | 1990-04-04 | Siemens Aktiengesellschaft | CMOS-Differentialkomparator mit Offsetspannung |
JPH05160692A (ja) * | 1991-12-03 | 1993-06-25 | Nippon Telegr & Teleph Corp <Ntt> | 電圧比較器 |
JPH08148580A (ja) * | 1994-08-01 | 1996-06-07 | Seiko Instr Inc | 半導体集積回路装置 |
US5576656A (en) * | 1994-12-20 | 1996-11-19 | Sgs-Thomson Microelectronics, Inc. | Voltage regulator for an output driver with reduced output impedance |
DE69521137T2 (de) * | 1995-12-29 | 2001-10-11 | St Microelectronics Srl | Verfahren und Schaltung zur Kompensation von Offsetspannungen in MOS-Differenzstufen |
JPH10200114A (ja) * | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 薄膜回路 |
JP3737240B2 (ja) * | 1997-04-24 | 2006-01-18 | 富士通株式会社 | 半導体集積回路装置 |
JP3947308B2 (ja) * | 1998-06-17 | 2007-07-18 | 沖電気工業株式会社 | 半導体集積回路 |
-
2003
- 2003-09-10 CN CN200610071008A patent/CN100590877C/zh not_active Expired - Lifetime
- 2003-09-10 CN CN2008101308743A patent/CN101359899B/zh not_active Expired - Lifetime
-
2010
- 2010-10-25 JP JP2010238088A patent/JP5351868B2/ja not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102656683A (zh) * | 2009-12-11 | 2012-09-05 | 株式会社半导体能源研究所 | 半导体装置 |
CN102656683B (zh) * | 2009-12-11 | 2015-02-11 | 株式会社半导体能源研究所 | 半导体装置 |
US9893204B2 (en) | 2009-12-11 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having transistor including two oxide semiconductor layers having different lattice constants |
CN102136427A (zh) * | 2010-12-24 | 2011-07-27 | 苏州华芯微电子股份有限公司 | 有效的实现低阈值电压mos器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5351868B2 (ja) | 2013-11-27 |
CN101359899B (zh) | 2011-02-09 |
JP2011103648A (ja) | 2011-05-26 |
CN100590877C (zh) | 2010-02-17 |
CN101359899A (zh) | 2009-02-04 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Owner name: JINZHEN CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20130328 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130328 Address after: Samoa Apia hiSoft Center No. 217 mailbox Patentee after: Jinzhen Co.,Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230530 Address after: Good road Taiwan Taipei City Neihu district Chinese 168 Lane 15 Building No. 4 Patentee after: HANNSTAR DISPLAY Corp. Address before: Apia, hiSoft center, No. 217 mailbox Patentee before: Jinzhen Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20100217 |
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CX01 | Expiry of patent term |