CN1812505A - 使用光纤的图像传感器 - Google Patents

使用光纤的图像传感器 Download PDF

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CN1812505A
CN1812505A CNA2005101376056A CN200510137605A CN1812505A CN 1812505 A CN1812505 A CN 1812505A CN A2005101376056 A CNA2005101376056 A CN A2005101376056A CN 200510137605 A CN200510137605 A CN 200510137605A CN 1812505 A CN1812505 A CN 1812505A
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金相植
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Abstract

提供了一种使用光纤的图像传感器,其中产生较少的像素杂散,从而可获得更清晰的图像。该图像传感器包括:图像感测部分,用于感测每像素的光学信号,所述光学信号沿输入路径传播;以及图像对准器,设置于所述图像感测部分的输入路径中,用于将倾斜光信号转换成垂直光信号。

Description

使用光纤的图像传感器
本申请主张2004年12月30日提交的韩国专利申请No.10-2004-0116517的权益,其如同在此完全阐述一样通过引入结合在本申请中。
技术领域
本发明涉及使用光纤的图像传感器,并更具体地,涉及使用光纤的图像传感器,其中生成更少的像素杂散(pixel straying),从而可获得更清晰的图像。
背景技术
图像传感器是将光学图像转换成电信号的半导体器件,包括电荷耦合器件(CCD)和具有若干金属氧化物半导体(MOS)晶体管的CMOS图像传感器,所述晶体管对应于像素的数目,集成在带有用于顺序输出所述MOS晶体管的电信号的外围电路的单个芯片上。随着传感器的小型化和更高度集成的多像素结构,每单位面积形成了更多像素。随着像素尺寸的减小,以“片上”方式形成的微透镜和滤色器层的滤色器的相应尺寸也变小。由于单元像素的尺寸变小,接收光的光电二极管区域减小,从而降低了光敏度。为增强图像传感器的光敏度,可改善其填充因子;即,光电二极管区域相对于器件自身的区域增加。然而,填充因子的增加受每个光电二极管的相关逻辑和信号处理电路存在的限制。还可通过聚焦来自目标图像的光、即入射光来获得增强的光敏度,所述光通过例如提供给每个光电二极管的微透镜来折射,以便将入射光集中到光电二极管中且远离没有光电二极管表面的相邻区域。以此方式,平行于微透镜光轴的光通过该微透镜折射,从而在沿所述光轴的一点形成焦点。
在任何情况下,当光电二极管区域接收更多的光时,光敏度得到改善。为此,可增大光遮蔽层中所形成的孔隙的尺寸。所述光遮蔽层典型地通过图案化包括对应于微透镜层所设置的多个孔隙的金属布线层而形成。该光遮蔽层阻挡向着存在于光电二极管之间的在下区域传播的光,并使光通过所述孔隙以打到直接设置于微透镜下的对应光电二极管。然而,随着入射角增大,孔隙尺寸应增大,这削弱了金属布线层的光遮蔽功能。例如,相对于对角线孔隙(diagonal aperture),靠近光遮蔽层中央而形成的孔隙应偏移多达1~3μm以在对角线匹配入射角。
入射光在图像平面上的所有点进入图像传感器。为了图像的更一致再现,即,在图像平面上的更大一致性,在进入较靠近图像传感器的中央区的光能和进入较靠近图像传感器的角区的光能的相应能量之间应有强度的平衡。为此,微透镜被形成为在图像平面上具有特定变化的尺寸,其中较大微透镜设置在角区中,且微透镜向着中央区逐渐变得更小。为获得如此精确的尺寸变化,需要昂贵的精确掩模。同时,用于光遮蔽的金属布线层应提供适当设置的孔以补偿图像传感器的中央和边缘(对角线)之间的变化的入射角。即,倾斜进入图像传感器的光(高入射角)影响光的折射率并降低微透镜的聚焦效率,导致到达下层即光电二极管的透射光的能量损失。过度的光折射可导致光打到相邻像素的光电二极管(像素杂散)且在重现的图像中产生模糊。
例如,在到具有1/4″光学镜片(optical)的图像传感器的入射角的情况中,该图像传感器基于允许人眼感测色的55°参考视角而被设计为具有55°~65°的视角(AOV)。高入射图像更易受图像传感器尺寸减小的影响,因为控制来自上述源的光能的传播路径从而使光精确打到光电转换部分、即特定光电二极管有更大的困难。这是由向更高像素数、更加小型化和增强的性能特性的趋势导致的。这些更大的入射角还增大了焦距,进一步使聚焦效率降级。
在CCD或CMOS图像传感器的制造中,在硅晶片上形成“片上”滤色器之后,晶片经历使用能量分散的X射线分光术的组装工艺,所述组装工艺包括:对晶片的切割、粘合和固化;玻璃盖的布线和粘合;以及标记(marking)。对最终产品执行封装测试。图1中示出封装后的现有图像传感器。
参照图1,图像传感器10被固定到以透明玻璃盖12密封的封装框架14上。此处,来自目标源的光以约30°的倾角进入图像传感器的除中央区以外的角区。为了以最小损失将光能从目标源集中到光电转换器件即光电二极管上,需要根据入射角向图像传感器的中央区适当地收缩聚光透镜。
参照图2,说明在多种图像传感器中存在的像素杂散的水平,应注意的是,向着对角线的杂散光随着增加的像素数(更高的分辨率)而增加,这需要更大的孔隙以增强对应的微透镜的光聚焦效率。然而,必要的孔隙尺寸增大可能太大而不能由图像传感器实现。此外,随着反射光再次进入相邻像素,由来自目标图像的增大的入射角引起的折射率的增大使光敏度降级并造成不清晰的图像(模糊)。
发明内容
相应的,本发明涉及使用光纤的图像传感器,其基本上消除了由相关技术的局限性和缺点导致的一个或多个问题。
本发明的一个目的是提供一种图像传感器,其中光以较少的杂散聚焦以获得清晰图像。
本发明另外的优点、目的及特征将在以下说明中部分阐明,并且部分将在对以下审查时对本领域普通技术人员变得明显,或可通过实践本发明而了解。本发明的目的和其他优点将通过在本书面说明及相应权利要求以及附图中所具体指出的结构来实现和获得。
为实现与本发明的用途一致的上述目的及其他优点,如所体现的和广泛描述的,提供一种图像传感器,包括:图像感测部分,用于感测每个像素的光学信号,所述光学信号沿输入路径传播;以及图像对准器,设置于所述图像感测部分的输入路径中,用于将倾斜的光信号转换成垂直的光信号。
还应理解,以上总体说明和以下详细说明均为示范性和解释性的,意在提供对如权利要求的本发明的进一步的解释。
附图说明
附图被包括以提供对本发明的进一步理解且被结合并构成本申请的一部分,说明了本发明的实施例且与本描述一起用于解释本发明的原理。在附图中:
图1是封装后的现有图像传感器的结构视图;
图2是曲线图,说明了存在于多种现有图像传感器中的像素杂散的水平;以及
图3是根据本发明的图像传感器的示图。
具体实施方式
现将对本发明的优选实施例进行详细引用,其实例在附图中说明。只要可能,同一引用标记将贯穿附图使用以指代相同或相似部分。
在图像传感器制造中,分辨率由图像平面中存在的光电二极管的数目决定。随着向高像素数和小型化的趋势,需要通过光接收透镜聚焦到图像平面上的来自目标源的光以50°~60°的入射角被接收。为了高效地聚焦光,每个像素形成多个滤色器和对应的微透镜,使得更大的入射角朝向图像传感器的角形成。如果设置于滤色器层以下或金属布线层以下的内(下)层薄薄地形成,入射角的裕度可增加。
为克服由较大入射角所引起的高折射率和较低光聚焦效率的影响和金属光遮蔽层中的削弱其光遮蔽能力的较大孔隙的影响,本发明的图像传感器采用光纤。图3示出根据本发明的使用光纤的图像传感器。
参考图3,经历了硅晶片工艺的图像传感器100被封装,即设置在封装框架140中,并且束光纤180设置在透明(例如玻璃)盖120和微透镜层160之间。所述光纤180封装在所述玻璃盖120中。光纤束具有与图像感测部分对应的面积(横截面)并使用透明环氧物质(未示出)附着于所述玻璃盖120,以设置于滤色器层之上。所述光纤用于使用在所述光纤长度内产生的折射总量,将进入玻璃盖120的光的传播方向改变到垂直于图像平面的路径中。换言之,所述光纤构成了将倾斜光信号转换成垂直光信号的图像对准器,该转换在光出了所述玻璃盖的下表面之后执行。
因而,图像传感器100感测每像素的光学信号,并且所述光学信号沿图像传感器的输入路径传播。图像对准器180设置在图像传感器100的输入路径中,以将输入路径的倾斜光信号转换成垂直光信号以便通过微透镜层160进入图像传感器。
每个光纤依赖于单元像素的尺寸而具有1~10μm的直径和1~10μm的长度。所述直径介于所述单元尺寸的五分之一和五倍之间,且所述长度依赖于封装类型。
在封装的图像传感器中,其中以玻璃盖密封封装框架的顶,包括所述光纤束的图像对准器设置在图像感测部分之上并可附着到玻璃盖的底或图像感测部分的顶。所述光纤的光传输路径可以提供红外截止(带阻挡)滤波器。
相应的,使用本发明的光纤束,转换的(垂直传播)光聚集图像平面,从而改善了在图像传感器的角的入射光的光聚焦效率。因此,在通过图案化金属布线层以限定每个像素的、形成光遮蔽层以补偿来自目标图像的光的倾斜角的工艺中,工艺裕度可得到增加,使能聚焦效率的增大和相应改善了的光电转换效率。更大的工艺裕度使能相对于掩蔽以及光遮蔽和滤色器层的形成的制造成本的减小。此外,不需要单独的红外截止滤波器,在本发明里其可由所述光纤实施并从而减小了封装框架的尺寸,其又使能更小的光学模块,从而使能更广泛的应用。此外,通过在光进入光感测部分之前引起垂直光,减小了光的内部传播距离,因为更短的焦距有利于聚焦效率。
对于本领域的技术人员将显而易见的是,可在本发明中进行不同的修改和变化而不背离本发明的精神和范围。因而,这意味着如果对本发明的修改和变化在所附的权利要求及其等效形式的范围内,本发明覆盖所述修改和变化。

Claims (16)

1.一种图像传感器,包括:
图像感测部分,用于感测每像素的光学信号,该光学信号沿输入路径传播;以及
图像对准器,设置于所述图像感测部分的输入路径中,用于将倾斜光信号转换成垂直光信号。
2.如权利要求1所述的图像传感器,还包括:
图像传感器封装,用于容纳所述图像感测部分和所述图像对准器,并具有由透明盖形成的上侧。
3.如权利要求2所述的图像传感器,其中所述图像对准器附着于所述透明盖的底表面。
4.如权利要求2所述的图像传感器,其中所述图像对准器附着于所述图像感测部分的顶表面。
5.如权利要求2所述的图像传感器,其中所述透明盖由玻璃制成。
6.如权利要求2所述的图像传感器,其中所述图像对准器包括:
光纤束,设置于所述透明盖和微透镜层之间。
7.如权利要求6所述的图像传感器,其中所述光纤束中的光纤被封装在所述透明盖中。
8.如权利要求6所述的图像传感器,其中所述光纤束具有对应于所述图像感测部分的面积。
9.如权利要求6所述的图像传感器,其中所述光纤束具有与所述图像感测部分对应的区域。
10.如权利要求6所述的图像传感器,其中所述光纤束使用透明环氧物质来附着于所述透明盖。
11.如权利要求6所述的图像传感器,其中所述光纤束设置于滤色器层之上。
12.如权利要求6所述的图像传感器,其中所述光纤束的每个光纤依赖于单元像素尺寸而具有1~10μm的直径和1~10μm的长度。
13.如权利要求12所述的图像传感器,其中所述长度根据封装类型而变化。
14.如权利要求12所述的图像传感器,其中所述光纤束的每个光纤的长度根据所述单元像素的尺寸而固定。
15.如权利要求14所述的图像传感器,其中所述直径介于所述单元像素尺寸的五分之一和五倍之间。
16.如权利要求6所述的图像传感器,还包括:
红外截止滤波器,被提供给所述光纤束的光纤。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107274348A (zh) * 2017-07-26 2017-10-20 胡晓明 用于光纤束传像的标定方法、标定装置
CN110416237A (zh) * 2019-07-30 2019-11-05 业成科技(成都)有限公司 光学式影像辨识装置及其制作方法
CN110769247A (zh) * 2019-11-07 2020-02-07 上海集成电路研发中心有限公司 一种图像传感器测试治具及测试方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011524519A (ja) * 2008-06-16 2011-09-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 屈折及び反射構造を用いた角度分解能を持つスペクトル検出器
US8860835B2 (en) * 2010-08-11 2014-10-14 Inview Technology Corporation Decreasing image acquisition time for compressive imaging devices
FR2974669B1 (fr) * 2011-04-28 2013-06-07 Commissariat Energie Atomique Dispositif imageur destine a evaluer des distances d'elements dans une image
US10388684B2 (en) * 2016-10-04 2019-08-20 Semiconductor Components Industries, Llc Image sensor packages formed using temporary protection layers and related methods

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4418284A (en) * 1980-03-17 1983-11-29 Matsushita Electric Industrial Co., Ltd. Solid-state color-image sensor and process for fabricating the same
US5413773A (en) * 1990-10-09 1995-05-09 General Motors Corporation Method for forming carbon filters
JP3079969B2 (ja) * 1995-09-14 2000-08-21 日本電気株式会社 完全密着型イメージセンサ及びその製造方法
US5995690A (en) * 1996-11-21 1999-11-30 Minnesota Mining And Manufacturing Company Front light extraction film for light guiding systems and method of manufacture
JP2000138792A (ja) * 1998-10-30 2000-05-16 Sharp Corp イメージセンサ及びその製造方法
JP2001159716A (ja) * 1999-12-03 2001-06-12 Matsushita Electric Ind Co Ltd 光ファイバアレイの製造方法およびそれを用いたイメージセンサ
US20020175267A1 (en) * 2000-03-15 2002-11-28 Watson Robert Malcolm Direct imaging system for emission microscopy
US6987258B2 (en) * 2001-12-19 2006-01-17 Intel Corporation Integrated circuit-based compound eye image sensor using a light pipe bundle
AU2003280637A1 (en) * 2002-10-31 2004-05-25 Inter Action Corporation Optical lighting system, test device for solid-state imaging device, repeater
US7091058B2 (en) * 2003-12-11 2006-08-15 Omnivision Technologies, Inc. Sacrificial protective layer for image sensors and method of using

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107274348A (zh) * 2017-07-26 2017-10-20 胡晓明 用于光纤束传像的标定方法、标定装置
CN107274348B (zh) * 2017-07-26 2024-01-19 胡晓明 用于光纤束传像的标定方法、标定装置
CN110416237A (zh) * 2019-07-30 2019-11-05 业成科技(成都)有限公司 光学式影像辨识装置及其制作方法
CN110769247A (zh) * 2019-11-07 2020-02-07 上海集成电路研发中心有限公司 一种图像传感器测试治具及测试方法
CN110769247B (zh) * 2019-11-07 2021-08-31 上海集成电路研发中心有限公司 一种图像传感器测试治具及测试方法

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